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Panasonic Transistors 2SA2162G Specifications page 2

Transistors silicon pnp epitaxial planar type

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2SA2162G
2SA2162_ P
P
 T
C
120
100
80
60
40
20
0
0
80
20
40
60
Ambient temperature T
2SA2162_ V
V
 I
CE(sat)
−1
− 0.1
T
= 85°C
a
− 0.01
− 0.1
−1
−10
Collector current I
2
This product complies with the RoHS Directive (EU 2002/95/EC).
-T
C
a
a
−70
T
a
−60
−50
−40
−30
−20
−10
0
0
100 120 140
(°C)
Collector-emitter voltage V
a
-I
CE(sat)
C
C
600
I
/ I
= 20
C
B
500
400
300
−25°C
200
25°C
100
0
−100
−1 000
−1
(mA)
C
2SA2162_ I
-V
C
CE
I
 V
C
CE
I
= −160 µA
= 25°C
B
−140 µA
−120 µA
−100 µA
−80 µA
−60 µA
−40 µA
−20 µA
− 0.5 −1.0 −1.5 −2.0 −2.5 −3.0
(V)
CE
2SA2162_ h
-I
FE
C
h
 I
FE
C
V
= −2V
CE
T
= 85°C
a
25°C
−25°C
−10
−100
−1 000
Collector current I
(mA)
C
SJC00384AED
2SA2162_ I
-V
C
BE
I
 V
C
BE
−100
V
= −2 V
CE
−90
−80
−70
−60
T
= 85°C
a
−50
−25°C
−40
−30
25°C
−20
−10
0
0 − 0.2 − 0.4 − 0.6 − 0.8 −1.0 −1.2 −1.4
Base-emitter voltage V
BE
2SA2162_ C
-V
ob
CB
C
 V
ob
CB
100
f = 1 MHz
T a = 25°C
10
1
0
5
Collector-base voltage V
CB
(V)
10
( V )

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