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Panasonic Transistors 2SA2078G Specifications page 2

Transistors silicon pnp epitaxial planar type

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2SA2078G
 T
P
C
a
120
100
80
60
40
20
0
0
80
20
40
60
Ambient temperature T
 V
I
B
BE
−3.5
= −10 V
V
CE
= 25°C
T
a
−3.0
−2.5
−2.0
−1.5
−1.0
− 0.5
0
− 0.2
− 0.4
− 0.6
0
Base-emitter voltage V
 I
h
FE
C
300
= 75°C
T
a
250
25°C
200
−25°C
150
100
50
0
−1
−10
−100
Collector current I
2
This product complies with the RoHS Directive (EU 2002/95/EC).
−60
= 25°C
T
a
−50
−40
−30
−20
−10
0
100 120 140
0
( °C )
Collector-emitter voltage V
a
−120
V
CE
−100
−80
−60
−40
−20
0
− 0.8
− 0.2
0
( V )
Base-emitter voltage V
BE
10
= −10 V
V
CE
1
−1 000
0
( mA )
Collector-base voltage V
C
 V
I
C
CE
= −300 µA
T
a
−250 µA
−200 µA
−150 µA
−100 µA
−50 µA
−2
−4
−6
−8
−10
−12
( V )
CE
 V
I
C
BE
= −10 V
= 75°C
−25°C
T
a
25°C
− 0.6
− 0.8
−1.0 −1.2
− 0.4
( V )
BE
 V
C
ob
CB
f = 1 MHz
= 25°C
T
a
−8
−16
−24
−32
−40
( V )
CB
SJC00382AED
 I
I
C
B
−140
= −10 V
V
CE
= 25°C
T
a
−120
−100
−80
−60
−40
−20
0
− 0.2 − 0.4 − 0.6 − 0.8 −1.0 −1.2
0
(m A )
Base current I
B
 I
V
CE(sat)
C
−1
I
C
= 75°C
T
a
− 0.1
−25°C
25°C
− 0.01
−1
−10
Collector current I
C
= 10
/ I
B
−100
( mA )

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