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Panasonic Transistors 2SA0720 Specifications page 2

Transistors silicon pnp epitaxial planar type

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2SA0720
P
 T
C
800
700
600
500
400
300
200
100
0
0
20
40
60
80
Ambient temperature T
V
 I
CE(sat)
−10
−1
25°C
− 0.1
−25°C
− 0.01
− 0.001
−1
−10
Collector current I
f
 I
T
240
200
160
120
80
40
0
1
10
Emitter current I
2
This product complies with the RoHS Directive (EU 2002/95/EC).
a
−1200
−1000
−800
−600
−400
−200
0
0
100
120
140
160
Collector-emitter voltage V
( °C )
a
C
−100
I
/ I
= 10
C
B
−10
T
= 75°C
a
−1
− 0.1
− 0.01
−100
−1000
−1
( mA )
C
E
50
V
= −10 V
CB
T
= 25°C
a
40
30
20
10
0
−1
100
( mA )
Collector-base voltage V
E
I
 V
C
CE
T
= 25°C
a
I
= −1.0 mA
B
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
−2
−4
−6
−8
−10
−12
( V )
CE
V
 I
BE(sat)
C
I
/ I
= 10
C
B
25°C
T
= −25°C
a
75°C
−10
−100
−1000
( mA )
Collector current I
C
C
 V
ob
CB
I
= 0
E
f = 1 MHz
T
= 25°C
a
−10
−100
( V )
CB
SJC00415AED
I
 I
C
B
−800
V
= −10 V
CE
T
= 25°C
a
−700
−600
−500
−400
−300
−200
−100
0
0
−2
−4
−6
−8
( mA )
Base current I
B
h
 I
FE
C
600
V
= −10 V
CE
500
400
300
T
= 75°C
a
25°C
200
−25°C
100
0
− 0.01
− 0.1
−1
( A )
Collector current I
C
V
 R
CER
BE
−120
I
= −2 mA
C
T
= 25°C
a
−100
−80
−60
−40
−20
0
1
10
100
Base-emitter resistance R
BE
−10
−10
1000
( kΩ )

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