Panasonic MA3J744 (MA744) Specifications

Schottky Barrier Diodes (SBD)
MA3J744
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
• High-density mounting is possible
• Forward current (Average) I
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Peak forward current
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : t = 1 s
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
4. * : t measurement circuit
rr
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: April 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA744)
= 200 mA rectification is possible
F(AV)
= 25°C
a
Symbol Rating
V 30
R
V 30
RRM
I 200
F(AV)
I 300
FM
I 1
FSM
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 200 mA
V I
F F
= 30 V
I V
R R
= 0 V, f = 1 MHz
C V
t R
= I
t I
rr F
= 0.1 I
I
rr
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
Note) The part number in the parenthesis shows conventional part number.
SKH00057BED
5˚
Unit
V
V 1 : Anode
2 : N.C.
mA
3 : Cathode
EIAJ: SC-79
mA
A
Marking Symbol: M1M
°C
Internal Connection
°C
Conditions
= 100 mA
R
= 100 Ω
, R
R L
Input Pulse Output Pulse
t t
r p
t
10%
I
F
90%
V
R
= 2 µs = 100 mA
t I
p F
= 0.35 ns = 100 mA
t I
r R
δ = 0.05
R
L
+0.1
0.3
–0
3
1 2
(0.65) (0.65)
0.9
1.3 ±0.1
2.0 ±0.2
SMini3-F1 Package
3
1 2
Min Typ Max
0.55
50
30
3.0
t
rr
t
= 0.1 I
I
rr R
= 100 Ω
Unit: mm
+0.1
0.15
–0.05
±0.1
Unit
V
µA
pF
ns
1