Panasonic MA3J700 Specification Sheet

Schottky Barrier Diodes (SBD)
MA3J700
Silicon epitaxial planar type
For high frequency rectification
■ Features
• Forward current (Average) I
• Optimum for high frequency rectification because of its short re-
verse recovery time t
rr
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 400 MHz.
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: April 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA10700)
= 500 mA rectification is possible
F(AV)
= 25°C
a
Symbol Rating
V 40
R
V 40
RRM
I 500
F(AV)
I 2
FSM
T 125
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 500 mA
V I
F F
= 35 V
I V
R R
= 0 V, f = 1 MHz
C V
t R
= I
t I
rr F
= 0.1 I
I
rr
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
Note) The part number in the parenthesis shows conventional part number.
SKH00052BED
5˚
Unit
V
V
1 : Anode
2 : N.C.
mA
3 : Cathode
A
EIAJ: SC-79
Marking Symbol: M2W
°C
°C
Internal Connection
Conditions
= 100 mA
R
= 100 Ω
, R
R L
4. * : t measurement circuit
rr
Input Pulse
t
t
r p
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
+0.1
0.3
–0
3
1 2
(0.65) (0.65)
0.9 ±0.1
1.3 ±0.1
2.0 ±0.2
SMini3-F1 Package
3
1 2
Min Typ Max
0.55
100
60
5
Output Pulse
t
t
rr
I
F
t
= 0.1 I
I
rr R
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
Unit: mm
+0.1
0.15
–0.05
Unit
V
µA
pF
ns
1