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Panasonic MA3J702 Specification Sheet page 2

Schottky barrier diodes (sbd) silicon epitaxial planar type

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MA3J702
 V
I
F
F
1
= 125°C
T
a
−1
10
−20°C
−2
10
−3
10
−4
10
−5
10
0
0.2
0.4
Forward voltage V
 T
I
R
a
4
10
3
10
V
R
2
10
10
1
-1
10
−40
0
40
80
120
Ambient temperature T
2
This product complies with the RoHS Directive (EU 2002/95/EC).
4
10
3
10
75°C
25°C
2
10
10
1
−1
10
0.6
0
( V )
F
80
= 20 V
60
10 V
6 V
3 V
40
20
0
0
160
200
Reverse voltage V
( °C )
a
 V
I
R
R
= 125°C
T
a
75°C
25°C
5
10
15
20
25
30
( V )
Reverse voltage V
R
 V
C
t
R
= 25°C
T
a
10
20
30
( V )
R
SKH00053BED
 T
V
F
a
0.8
0.6
= 500 mA
I
F
0.4
50 mA
0.2
5 mA
0
−40
0
40
80
120
Ambient temperature T
a
 t
I
F(surge)
W
3
10
= 25°C
T
a
t
W
2
10
Breakdown point ( typ. )
10
1
-1
10
-1
10
1
10
( ms )
Pulse width t
W
160
200
( °C )
I
F(surge)
2
10

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Ma10702