Panasonic MA3D750 Specification Sheet

Schottky Barrier Diodes (SBD)
MA3D750
Silicon epitaxial planar type (cathode common)
For switching mode power supply
■ Features
• Low forward voltage V
• High dielectric breakdown voltage: > 5 kV
• Easy-to-mount, due to its V cut lead end
■ Absolute Maximum Ratings T
Parameter
Repetitive peak MA3D750
reverse-voltage MA3D750A
Forward current (Average)
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : Half sine wave; 10 ms/cycle
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current MA3D750
MA3D750A
Thermal resistance (j-c)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 150 MHz.
Publication date: April 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA7D50)
F
= 25°C
C
Symbol Rating
V 40
RRM
45
I 10
F(AV)
I 120
FSM
−40 to +125
T
j
−40 to +125
T
stg
= 25°C ± 3°C
C
Symbol
= 5 A, T
V I
F F
I V
R R
V
R
R
th(j-c)
Note) The part numbers in the parenthesis show conventional part number.
, MA3D750A
Unit
V
A
A
°C
°C
Conditions
= 25°C
C
= 40 V, T = 25°C
C
= 45 V, T = 25°C
C
SKH00043BED
(MA7D50A)
Unit: mm
4.6 ±0.2
9.9 ±0.3
2.9
φ 3.2
±0.1
1.4 ±0.2
2.6
1.6 ±0.2
0.8 ±0.1 0.55 ±0.15
2.54 ±0.30
5.08 ±0.50
1 2 3
1: Anode
2: Cathode
(Common)
3: Anode
TO-220D-A1 Package
Min Typ Max
0.55
3
3
3.0 °C/W
±0.2
±0.1
Unit
V
mA
1