Panasonic Light Emitting Diodes LNJ253W82RA Specifications

Light Emitting Diodes
LNJ253W82RA
Hight Bright Surface Mounting Chip LED
SV (Side View) -0.5 Type
 Absolute Maximum Ratings T
Parameter
Power dissipation
Forward current
Pulse forward current *
Reverse voltage
Operating ambient temperature
Storage temperature
Note) * : The condition of I is duty 10%, Pulse width 1 msec.
FP
 Electro-Optical Characteristics T
Parameter
* 1
Luminous intensity
Reverse current
Forward voltage
Peak emission wavelength
Dominant emission wavelength
Spectral half band width
Note) * 1: Measurement tolerance: ±20%
* 2: Measurement tolerance: ±3 nm
I  I
O F
100
50
30
10
5
3
1
0.5
0.3
0.1
1 3 5 10
Forward current I
F
Relative luminous intensity  λ
100
80
60
40
20
0
550 600 650
Peak emission wavelength λ
Publication date: January 2009
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol Rating
P 55
D
I 20
F
I 60
FP
V
R
T –30 to +85
opr
T –40 to +100
stg
= 25°C±3°C
a
Symbol
I I = 10 mA
O F
I V = 4 V
R R
V I = 10 mA
F F
λ I = 10 mA
P F
* 2
I = 10 mA
λ
d F
I = 10 mA
Δλ
F
100
50
30
10
5
3
1
30 50 100
1.6
(mA) Forward voltage V
P
Directive characteristics
20°
30°
40°
50°
60°
70°
80°
90°
700 100 80 60 40
(nm) Relative luminous intensity (%)
P
Unit
mW
mA
mA
4 V
°C
°C
Conditions
I  V
F F
1.8 2.0 2.2 2.4
(V)
F
0°
10° 10°
20°
30°
40°
80°
50°
60°
60°
40°
70°
20°
20 0 20 40 60 80 100
SHD00693BEK
 Lighting Color
 Red
Min Typ Max
8.0 15.0 60.8
100
1.92 2.5
645
620 630 640
22
Relative luminous intensity  T
10
5
3
1
0.5
0.3
0.1
−20 0 20 40
Ambient temperature T
I  T
F a
30
20
10
80°
90°
0
0 20 40 60
Ambient temperature T
Unit
mcd
µA
V
nm
nm
nm
a
60 80 100
(°C)
a
80 100
(°C)
a
1