Light Emitting Diodes
LNJ0F1C5FRA4
Hight Bright Surface Mounting Chip LED
Strobe Type
Absolute Maximum Ratings T
Parameter
Power dissipation
Forward current
Pulse forward current
*
Reverse current
Operating ambient temperature
Storage temperature
Note) *: The condition of I
is duty 10%, Pulse width 1 msec.
FP
Electro-Optical Characteristics T
Parameter
Luminous intensity
Forward voltage
Chromaticity coordinates
I
I
O
F
10 000
5 000
3 000
1 000
500
300
100
50
30
10
1
3
5
10
Forward current I
F
Publication date: December 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol
Rating
P
103
D
I
25
F
I
50
FP
I
100
R
T
–30 to +85
opr
T
–40 to +100
stg
= 25°C±3°C
a
Symbol
I
I
= 20 mA / chip
O-20
F
V
I
= 20 mA / chip
F
F
x
I
= 20 mA / chip
F
y
I
= 20 mA / chip
F
100
50
30
10
5
3
1
30
50
100
1.0
2.0
(mA)
Forward voltage V
Directive characteristics
Y
−20°
X
−30°
−40°
X
Y
−50°
−60°
−70°
−80°
−90°
100
80
60
40
Relative luminous intensity (%)
SHD00639BEK
Unit
mW
mA
mA
mA
°C
°C
Conditions
I
V
F
F
3.0
4.0
5.0
6.0
(V)
F
0°
−10°
10°
20°
30°
40°
80°
50°
60°
60°
40°
70°
20°
80°
90°
20
0
20
40
60
80
100
Lighting Color
White
Min
Typ
Max
1 350
1 800
3.0
3.4
4.0
0.280
0.320
0.260
0.383
Relative luminous intensity T
1 000
500
300
100
50
30
10
−20
0
20
40
60
Ambient temperature T
a
I
T
F
a
60
IFP
50
40
30
DC
20
10
0
20
40
60
Ambient temperature T
a
Unit
mcd
V
a
80
100
(°C)
80
100
(°C)
1