Light Emitting Diodes
LNJ253W82RA
Hight Bright Surface Mounting Chip LED
SV (Side View) -0.5 Type
Absolute Maximum Ratings T
Parameter
Power dissipation
Forward current
Pulse forward current
*
Reverse voltage
Operating ambient temperature
Storage temperature
Note) * : The condition of I
is duty 10%, Pulse width 1 msec.
FP
Electro-Optical Characteristics T
Parameter
* 1
Luminous intensity
Reverse current
Forward voltage
Peak emission wavelength
Dominant emission wavelength
Spectral half band width
Note) * 1: Measurement tolerance: ±20%
* 2: Measurement tolerance: ±3 nm
I
I
O
F
100
50
30
10
5
3
1
0.5
0.3
0.1
1
3
5
10
Forward current I
F
Relative luminous intensity λ
100
80
60
40
20
0
550
600
650
Peak emission wavelength λ
Publication date: January 2009
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol
Rating
P
55
D
I
20
F
I
60
FP
V
R
T
–30 to +85
opr
T
–40 to +100
stg
= 25°C±3°C
a
Symbol
I
I
= 10 mA
O
F
I
V
= 4 V
R
R
V
I
= 10 mA
F
F
λ
I
= 10 mA
P
F
* 2
I
= 10 mA
λ
d
F
I
= 10 mA
Δλ
F
100
50
30
10
5
3
1
30
50
100
1.6
(mA)
Forward voltage V
P
Directive characteristics
20°
30°
40°
50°
60°
70°
80°
90°
700
100
80
60
40
(nm)
Relative luminous intensity (%)
P
Unit
mW
mA
mA
4
V
°C
°C
Conditions
I
V
F
F
1.8
2.0
2.2
2.4
(V)
F
0°
10°
10°
20°
30°
40°
80°
50°
60°
60°
40°
70°
20°
20
0
20
40
60
80
100
SHD00693BEK
Lighting Color
Red
Min
Typ
Max
8.0
15.0
60.8
100
1.92
2.5
645
620
630
640
22
Relative luminous intensity T
10
5
3
1
0.5
0.3
0.1
−20
0
20
40
Ambient temperature T
I
T
F
a
30
20
10
80°
90°
0
0
20
40
60
Ambient temperature T
Unit
mcd
µA
V
nm
nm
nm
a
60
80
100
(°C)
a
80
100
(°C)
a
1