LG -A120 Service Manual page 27

internal TCSR(Temperature Compensated Self Refresh). It also supports variable and fixed
latency, driver strength settings, Burst sequence (wrap or No-wrap) options and a device ID
register (DIDR).
The K5L6433ABM is suitable for use in data memory of mobile communication system to
reduce not only mount area but also power consumption.
This device is available in 88-ball FBGA Type.
Features
<Common>
‧ Operating Temperature : -25°C ~ 85°C
‧ Package : 88-ball FBGA Type - 8mm x 10mm x 1.2mmt, 0.8mm pitch
<NOR Flash>
‧ This device has the Sync MRS option
( Extended Configuration Register )
‧ Single Voltage, 1.7V to 1.95V for Read and Write operations
‧ Organization
- 4,194,304 x 16 bit (Word Mode Only)
‧ Read While Program/Erase Operation
‧ Multiple Bank Architecture
- 16 Banks (4Mb Partition)
‧ OTP Block : Extra 256word block
‧ Read Access Time (@ CL=30pF)
- Asynchronous Random Access Time : 70ns
- Synchronous Random Access Time : 70ns
- Burst Access Time :7ns (108Mhz)
‧ Page Mode Operation
8-Words Page access allows fast asychronous read Page Read Access Time : 20ns
‧ Burst Length :
- Continuous Linear Burst
- Linear Burst : 8-word & 16-word with Wrap
‧ Block Architecture
- Eight 4Kword blocks and one hundred twenty seven 32Kword blocks
- Bank 0 contains eight 4 Kword blocks and seven 32Kword blocks
- Bank 1~Bank 15 contain one hundred twenty 32Kword blocks
‧ Reduce program time using the VPP
‧ Support Single & Quad word accelerate program
‧ Power Consumption (Typical value, CL=30pF)
- Async/Sync burst Access Current : 24mA
- Program/Erase Current : 15mA
- Read While Program/Erase Current : 40mA
- Standby Mode/Auto Sleep Mode :15uA
‧ Block Protection/Unprotection
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