ASROCK Fatal1ty Z97M Killer Series User Manual page 82

DRAM Tweaker
Fine tune the DRAM settings by leaving marks in checkboxes. Click OK to conirm and
apply your new settings.
CAS# Latency (tCL)
he time between sending a column address to the memory and the beginning of the data
in response.
RAS# to CAS# Delay (tRCD)
he number of clock cycles required between the opening of a row of memory and
accessing columns within it.
Row Precharge Time (tRP)
he number of clock cycles required between the issuing of the precharge command
and opening the next row.
RAS# Active Time (tRAS)
he number of clock cycles required between a bank active command and issuing the
precharge command.
Command Rate (CR)
he delay between when a memory chip is selected and when the irst active command can
be issued.
Write Recovery Time (tWR)
he amount of delay that must elapse ater the completion of a valid write operation,
before an active bank can be precharged.
Refresh Cycle Time (tRFC)
he number of clocks from a Refresh command until the irst Activate command to
the same rank.
RAS to RAS Delay (tRRD)
he number of clocks between two rows activated in diferent banks of the same
rank.
Write to Read Delay (tWTR)
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