Philips TDA8920B Product Data Sheet page 24

Philips Semiconductors
0
α
cs
(dB)
−20
−40
−60
(1)
−80
(2)
−100
2
10 10
= ±27 V; 2 × 3 Ω SE configuration.
V
P
(1) P = 10 W.
out
(2) P = 1 W.
out
Fig 18. Channel separation as a function of frequency;
SE configuration with 2 × 3 Ω load
32
P
diss
(W)
24
16
8
0
−2 −1
10 10
= ±27 V; f = 1 kHz.
V
P
(1) 2 × 3 Ω SE configuration.
(2) 2 × 4 Ω SE configuration.
(3) 1 × 6 Ω BTL configuration.
(4) 1 × 8 Ω BTL configuration.
Fig 20. Power dissipation as a function of total output
power
TDA8920B_2
Product data sheet
001aab233
3 4
10 10 10
f (Hz)
001aab235
(3)
(1)
(4)
(2)
2
1 10 10 10
P (W)
o
Rev. 02 — 07 November 2005
0
α
cs
(dB)
−20
−40
−60
−80
−100
5
10
= ±27 V; 2 × 4 Ω SE configuration.
V
P
(1) P = 10 W.
out
(2) P = 1 W.
out
Fig 19. Channel separation as a function of frequency;
SE configuration with 2 × 4 Ω load
100
η
(%)
80
60
40
20
0
3
0
= ±27 V; f = 1 kHz.
V
P
(1) 2 × 3 Ω SE configuration.
(2) 2 × 4 Ω SE configuration.
(3) 1 × 6 Ω BTL configuration.
(4) 1 × 8 Ω BTL configuration.
Fig 21. Efficiency as a function of total output power
TDA8920B
2 × 100 W class-D power amplifier
001aab234
(1)
(2)
2 3 4
10 10 10
001aab236
(2)
(4)
80 160
P
o
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
5
10
f (Hz)
(1)
(3)
240
(W)
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