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Philips Semiconductors
2
10
(THD + N)/S
(%)
10
1
−1
10
(1)
−2
10
(2)
−3
10
2
10
10
= ±27 V; 2 × 3 Ω SE configuration.
V
P
(1) P
= 1 W.
out
(2) P
= 10 W.
out
Fig 14. (THD + N)/S as a function of frequency; SE
configuration with 2 × 3 Ω load
2
10
(THD + N)/S
(%)
10
1
−1
10
(1)
−2
10
(2)
−3
10
2
10
10
= ±27 V; 1 × 6 Ω BTL configuration.
V
P
(1) P
= 1 W.
out
(2) P
= 10 W.
out
Fig 16. (THD + N)/S as a function of frequency; BTL
configuration with 1 × 6 Ω load
TDA8920B_2
Product data sheet
001aab229
3
4
5
10
10
10
f (Hz)
001aab231
3
4
5
10
10
10
f (Hz)
Rev. 02 — 07 November 2005
2 × 100 W class-D power amplifier
2
10
(THD + N)/S
(%)
10
1
−1
10
−2
10
−3
10
2
10
10
= ±27 V; 2 × 4 Ω SE configuration.
V
P
(1) P
= 1 W.
out
(2) P
= 10 W.
out
Fig 15. (THD + N)/S as a function of frequency; SE
configuration with 2 × 4 Ω load
2
10
(THD + N)/S
(%)
10
1
−1
10
(1)
−2
10
(2)
−3
10
2
10
10
= ±27 V; 1 × 8 Ω BTL configuration.
V
P
(1) P
= 1 W.
out
(2) P
= 10 W.
out
Fig 17. (THD + N)/S as a function of frequency; BTL
configuration with 1 × 8 Ω load
TDA8920B
001aab230
(1)
(2)
3
4
5
10
10
10
f (Hz)
001aab232
3
4
5
10
10
10
f (Hz)
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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