Philips Semiconductors
13.9 Curves measured in reference design
2
10
(THD + N)/S
(%)
10
1
−1
10
−2
10
−3
10
−2
−1
10
10
= ±27 V; 2 × 3 Ω SE configuration.
V
P
(1) f = 6 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.
Fig 10. (THD + N)/S as a function of output power; SE
configuration with 2 × 3 Ω load
2
10
(THD + N)/S
(%)
10
1
−1
10
−2
10
−3
10
−2
−1
10
10
= ±27 V; 1 × 6 Ω BTL configuration.
V
P
(1) f = 6 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.
Fig 12. (THD + N)/S as a function of output power; BTL
configuration with 1 × 6 Ω load
TDA8920B_2
Product data sheet
001aab225
(1)
(2)
(3)
2
1
10
10
10
P
(W)
o
001aab227
(1)
(2)
(3)
2
1
10
10
10
P
(W)
o
Rev. 02 — 07 November 2005
2
10
(THD + N)/S
(%)
10
1
−1
10
−2
10
−3
10
−2
3
10
= ±27 V; 2 × 4 Ω SE configuration.
V
P
(1) f = 6 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.
Fig 11. (THD + N)/S as a function of output power; SE
configuration with 2 × 4 Ω load
2
10
(THD + N)/S
(%)
10
1
−1
10
−2
10
−3
10
−2
3
10
= ±27 V; 1 × 8 Ω BTL configuration.
V
P
(1) f = 6 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.
Fig 13. (THD + N)/S as a function of output power; BTL
configuration with 1 × 8 Ω load
TDA8920B
2 × 100 W class-D power amplifier
−1
10
1
10
(1)
(2)
(3)
−1
10
1
10
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
001aab226
(1)
(2)
(3)
2
10
P
(W)
o
001aab228
2
3
10
10
P
(W)
o
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