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Philips Semiconductors
Table 7:
Static characteristics
= ± 27 V; f
V
= 317 kHz; T
P
osc
Symbol
Parameter
Temperature protection
T
temperature protection activation
prot
T
hysteresis of temperature protection
hys
[1]
The circuit is DC adjusted at V
[2]
With respect to SGND (0 V).
[3]
The transition between Standby and Mute mode has hysteresis, while the slope of the transition between Mute and Operating mode is
determined by the time-constant of the RC-network on the MODE pin; see
[4]
DC output offset voltage is applied to the output during the transition between Mute and Operating mode in a gradual way. The slope of
the dV/dt caused by any DC output offset is determined by the time-constant of the RC-network on the MODE pin.
12. Dynamic characteristics
12.1 Switching characteristics
Table 8:
Switching characteristics
= ± 27 V; T
= 25 ° C; unless otherwise specified.
V
DD
amb
Symbol
Parameter
Internal oscillator
f
typical internal oscillator frequency
osc
f
internal oscillator frequency range
osc(int)
External oscillator or frequency tracking
V
high-level voltage on pin OSC
OSC
V
trip level for tracking on pin OSC
OSC(trip)
f
frequency range for tracking
track
TDA8920B_2
Product data sheet
...continued
= 25 ° C; unless otherwise specified.
amb
= ±12.5 V to ±30 V.
P
V
(V)
O
V
oo(on)
STBY
V
oo(mute)
0
Fig 7. Behavior of mode selection pin MODE
Conditions
R
Rev. 02 — 07 November 2005
Conditions
Figure
slope is directly related to the time-constant
of the RC-network on the MODE pin
MUTE
0.8
2.2
Min
= 30.0 kΩ
290
OSC
210
SGND + 4.5
-
210
TDA8920B
2 × 100 W class-D power amplifier
Min
-
-
7.
ON
3.0
4.2
V
MODE
Typ
317
-
SGND + 5
SGND + 2.5
-
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Typ
Max
Unit
°C
150
-
°C
20
-
5.5
(V)
coa021
Max
Unit
344
kHz
600
kHz
SGND + 6
V
-
V
600
kHz
13 of 34
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