Toshiba V200 Series User Manual page 57

GAA242**S
Analog Inputs
Analog Outputs
Isolation
Connection method
Resolution
Accuracy
Nonlinearity
Input Impedance
Excitation Current for RTD 0.5 mA
General
Operating Temperature
Storage Temperature
Operating Humidity
Vibration
Shock
Mechanical Dimension
Weight
FTB
(Fast Transient / Burst)
Electrostatic discharge
Electromagnetic field
RF Immunity
Dumped Oscillatory wave IEC61000-4-12
Surge Immunity
Radiated emission
4 Universal Input Channels
Voltage Input 0 - 10 V
Current Input 0-20mA, 4-20mA
RTD PT100 (alpha1, alpha2)
Thermocouple(TYPE
B,R,S,E,J,K,N,T.)
mV 0-100mV, 0-50 mV
2 Output channels
Voltage 0 - 10 V (Min Load 1000 ohm)
or
Current 4 - 20 mA (Max load 500 ohm)
Isolation between analog and digital
section. No inter-channel isolation.
Power supply is isolated
Removable terminals (3.81mm pitch)
16 Bit
0.2 % of Full Scale
0.04% Max.
1Mohm (Voltage/mV/TC/RTD mode)
typically 30 ohm (Current mode)
0 to 55 Degree.
(-20) to 85 deg.C.
10 to 90 % (Non condensing)
10Hz to 150Hz ,displacement of 0.2
mm (peak) (3 mutually perpendicular
axes)
490.5 m/s2,2 half-sine shocks per
axis, on 3 mutually perpendicular
axes)
100mm X 35mm X 70mm
180 gm.
IEC61000-4-4 [2.2kV (Power- Direct
Injection), 1.2KV (I/O - Capacitive
clamp).]
IEC61000-4-2 Level 3
IEC61000-4-3, 10 V/m AM modulation
(80 MHz to 1 GHz)
IEC61000-4-6, 10 V/m AM modulation
(0.15MHz to 80 MHz)
IEC61000-4-5 Level 2
EN50081-2
Power Rating (Back Plane)
Digital Side: Power derived from expansion slot
Voltage Rating
Current Rating
Power Supply:
Page 49
3.75 VDC derived from
base model
Upto 80mA
24VDC, 150mA
PWR
CS11
IN1+
AGND
I1-
CS21
F
IN2+
L
AGND
I2-
A
CS31
0
IN3+
AGND
4
I3-
0
CS41
2
IN4+
U
AGND
I4-
VO1
IO1
AGND
VO2
IO2