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harman/kardon
Darlington
Silicon NPN Triple Diffused Planar Transistor
Absolute maximum ratings
(Ta=25°C)
Symbol
2SD2560
Unit
V
150
V
CBO
V
150
V
CEO
V
5
V
EBO
I
15
A
C
I
1
A
B
P
130(Tc=25°C)
W
C
Tj
150
°C
T
stg
–55to+150
°C
Typical Switching Characteristics (Common Emitter)
V
R
I
V
CC
L
C
(Ω)
(V)
(A)
4
40
10
– V
I
Characteristics (Typical)
C
C E
1 5
1 0
5
0
0
2
4
C o l l e c t o r - E m i t te r V o l ta g e V
– I
h
Characteristics (Typical)
F E
C
50000
10000
5000
1000
500
0 2
0 . 5
1
C o l l e c to r C u rr e n t I
( A )
C
– I
f
Characteristics (Typical)
T
E
8 0
6 0
4 0
2 0
0
– 0 . 0 2
– 0 . 0 5
– 0 1
– 0 .5
– 1
Em i tt e r C u r re n t I
(A )
E
158
2SD2560
(Complement to type 2SB1647)
Electrical Characteristics
Symbol
Conditions
I
V
=150V
CBO
CB
I
V
=5V
EBO
EB
V
I
=30mA
(BR)CEO
C
h
V
=4V, I
FE
CE
V
I
=10A, I
(sat)
CE
C
B
V
I
=10A, I
(sat)
BE
C
B
f
V
=12V, I
T
CE
C
V
=10V, f=1MHz
OB
CB
∗h
Rank
O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
FE
V
I
I
BB1
BB2
B1
B2
(V)
(V)
(mA)
(mA)
–5
10
10
–10
( sa t ) – I
V
C E
B
3
2
1
0
6
0 .2
0.5
1
(V )
CE
Bas e C ur r ent I
– I
h
Temperature Characteristics (Typical)
F E
C
( V
=4 V)
C E
50000
10000
5000
1000
500
5
10
15
02
0.5
C ol lec tor C ur r ent I
Safe Operating Area (Single Pulse)
(V
=12V )
C E
–5
–10
Application : Audio, Series Regulator and General Purpose
(Ta=25°C)
2SD2560
Unit
µ A
100
max
µ A
100
max
150
V
min
∗
5000
=10A
min
C
V
=10mA
2.5
max
=10mA
3.0
V
max
=–2A
70
MHz
typ
E
120
pF
typ
t
t
t
on
stg
f
( µ s)
( µ s)
( µ s)
0.8typ
4.0typ
1.2typ
Characteristics (Typical)
I
=.15A
C
I
=.10A
C
I
=.5A
C
5
10
50
100
200
( m A)
B
( V
= 4V )
C E
3.0
1.0
0.5
0.1
1
5
10
15
(A)
C
AVR 355/230 Service Manual
Equivalent circuit
B
External Dimensions MT-100(TO3P)
4.8
15.6
±0.4
9.6
a
ø3.2
±0.1
b
2
3
+0.2
1.05
-0.1
5.45
5.45
±0.1
±0.1
B
C
E
Weight : Approx 6.0g
a. Type No.
b. Lot No.
– V
I
Temperature Characteristics (Typical)
C
BE
15
10
5
0
0
1
B as e-E mi ttor Vol tage V
(V )
BE
θ
– t Characteristics
j-a
1
10
100
Ti m e t( ms )
P c – T a Derating
130
100
50
Without Heatsink
3.5
0
0
25
50
75
100
A mbi ent Tem per ature Ta(˚ C)
Page 57 of 125
C
(70 Ω)
E
±0.2
2.0
±0.1
+0.2
0.65
-0.1
1.4
( V
=4V )
C E
2
2.2
1000 2000
125
150
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