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harman/kardon
Darlington
Silicon PNP Epitaxial Planar Transistor
Absolute maximum ratings
(Ta=25°C)
Symbol
2SB1647
Unit
V
–150
V
CBO
V
–150
V
CEO
V
–5
V
EBO
I
–15
C
A
I
–1
A
B
P
130(Tc=25°C)
W
C
Tj
150
°C
T
stg
–55 to +150
°C
Typical Switching Characteristics (Common Emitter)
I
V
R
V
CC
L
C
(V)
(Ω)
(A)
–40
4
10
–10
– V
I
Characteristics (Typical)
C
C E
–1 5
–1 0
– 5
0
0
– 2
– 4
C o l l e c to r - Em i tte r V o l ta g e V
– I
h
Characteristics (Typical)
F E
C
50,000
10,000
5,000
1,000
– 0 . 2
– 0 . 5
– 1
C o l l e c to r C u rr e n t I
( A)
C
– I
f
Characteristics (Typical)
T
E
6 0
4 0
2 0
0
0 . 0 2
0 .0 5
0 .1
0 .5
1
E m i t te r C u rr e n t I
(A )
E
54
2SB1647
(Complement to type 2SD2560)
Electrical Characteristics
Symbol
Conditions
I
V
=–150V
CBO
CB
I
V
=–5V
EBO
EB
V
I
=–30mA
(BR)CEO
C
h
V
=–4V, I
FE
CE
C
V
(sat)
I
=–10A, I
=–10mA
CE
C
B
V
I
=–10A, I
=–10mA
(sat)
BE
C
B
f
V
=–12V, I
T
CE
C
V
=–10V, f=1MHz
OB
CB
∗h
Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
FE
I
V
I
BB1
BB2
B1
B2
(V)
(V)
(mA)
(mA)
5
–10
10
(s a t) – I
V
C E
–3
–2
–1
0
–6
–0 .2
–0.5
–1
(V )
Bas e C ur r ent I
CE
– I
h
Temperature Characteristics (Typical)
FE
C
(V
=– 4V)
C E
50000
10000
5000
1000
–5
–10 –15
–0.2
–0.5
C oll ec tor C ur r ent I
Safe Operating Area (Single Pulse)
(V
=–1 2V)
C E
5
10
Application : Audio, Series Regulator and General Purpose
(Ta=25°C)
2SB1647
Unit
µ A
–100
max
µ A
–100
max
–150
min
V
∗
5000
=–10A
min
–2.5
V
max
–3.0
V
max
45
=2A
typ
MHz
E
320
typ
pF
t
t
t
on
stg
f
( µ s)
( µ s)
( µ s)
0.7typ
1.6typ
1.1typ
Characteristics (Typical)
B
I
=–5A
C
–5
–10
–50
–100
–200
( m A )
B
( V
=–4V )
C E
125˚ C
25˚ C
–30˚C
–1
–5
–10 –15
(A )
C
AVR 355/230 Service Manual
B
Equivalent circuit
External Dimensions MT-100(TO3P)
4.8
15.6
±0.4
9.6
a
ø3.2
±0.1
b
2
3
+0.2
1.05
-0.1
5.45
5.45
±0.1
±0.1
B
C
E
Weight : Approx 6.0g
a. Type No.
b. Lot No.
– V
I
Temperature Characteristics (Typical)
C
BE
–15
–10
–5
0
0
–1
–2
Base-E mi ttor V ol tage V
( V)
BE
θ
– t Characteristics
j-a
3
1
0.5
0.1
1
10
100
Ti me t(m s )
P c – T a Derating
130
100
50
W i thout Heatsi nk
3.5
0
0
25
50
75
100
A m bi ent Tem per ature Ta(˚ C)
Page 56 of 125
E
(70Ω )
C
±0.2
2.0
±0.1
+0.2
0.65
-0.1
1.4
( V
=–4V )
C E
–3
1000 2000
125
150
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