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T R A N S I ST O R
Q 3 0 1
2 2 3 2 1 6 6 0
Transistor
Q 3 0 2
223 1 9454
D I O D E
2 1 0900 1 1
Silicon
D 3 0 1 , 3 0 2 , 3 0 8
Germanium
D 3 0 7
2 1 0 0 1 880
Silicon
D 3 0 3 - 3 06
2 1 0 1 5 5 5 0
R E S I ST O R
R 3 0 3
4 2 1 24 5 6 0
Carbon Composition
R 3 0 6
4 2 1 24 1 0 1
R 3 05
4 2 1 24 1 5 1
R 3 0 2
4 2 1 24 2 2 1
R 3 0 1 , 3 04
4 2 1 244 7 1
(L302, 3 0 5 )
R 3 0 8
4 1 1 4 3 1 0 2
Carbon Film
R 3 0 7
4 0 1 4 3 1 0 3
POT E N T I O M E T E R
VR3 0 1
4 9 9 06 3 0 1
EVL-SOAAOOB 3 2
VR302
4 9 9 06 1 0 3
EVL-SOAAOOB 14
CAPAC I T O R
3 1 8 29095
C 3 3 4
Ceramic Disc
C3 1 6 , 3 3 5
3 1 8290 1 0
C3 1 0, 3 1 5
3 1 8 2 905 0
C302
3 1 8 2 9 200
C 3 0 1 , 3 1 7
3 1 8 2 9 3 3 0
C307
3 1 8 2 9 3 9 0
C320, 3 2 9
3 1 8 294 7 0
C3 2 3
3 1 829620
C3 1 4 , 3 2 4
3 1 829820
C3 2 1 , 3 2 8
3 1 8 29 1 0 1
C3 1 9
3 1 829 1 2 1
C3 04 , 3 0 6 , 3 0 9 ,
3 0 8 2 0 1 0 3
3 1 1 , 3 1 3 , 3 1 8,
3 2 6 , 3 2 7 , 3 3 1 ,
3 3 3
C3 0 3 ,305 , 3 0 8 ,
3 6 226226
Electrolytic
3 1 2 , 3 3 0 , 3 3 2
I N D U CTOR
L3 1 4
5 3 0 1 00 0 1
Micro Inductor
L3 04 , 3 1 3
5 5 00 3 1 6 0
L302, 3 0 5
5 5 0 0 3 2 6 2
L3 0 1
5 5 0 0 3 3 7 3
L3 0 3 , 3 0 6
5 5 00 3 3 74
L3 0 7
5 5 00 3 3 7 5
L3 0 8 - 310, 3 1 2
5 5 0 0 3 3 76
2SC 2 1 6 6
"
2SC 1 94 5 D
l OD l
1 S l 8 8FM
1 S l 5 5 5
Yz
G K
5 6 .11.
"
"
"
"
1 00 .11.
"
"
"
"
1 5 0 .11.
"
"
"
"
220 .11.
"
"
"
"
4 7 0 .11.
l /4 S T J
1 k.11.
"
"
"
VJ
10 k.11.
3 0 0 .11. B
1 0 k.11. B
5 0WV
SL
0 . 5 pF
"
"
"
"
1 pF
"
"
"
"
5 pF
"
"
"
"
20 pF
"
"
"
"
33 pF
"
"
"
"
39 pF
"
"
"
"
47 pF
"
"
"
"
62 pF
"
"
"
"
82 pF
"
"
"
"
1 0 0 pF
"
"
"
"
1 2 0 pF
"
"
"
0 . 0 1 µF
TW
1 6WV
22 µF
l Q µH
# 220 1 96
# 220 3 24
# 2 205 2 7
# 2205 28
# 2205 29
# 2205 3 0
- 3 1 -
L3 1 1
5 5 003 3 7 7
T R I M M E R CAPAC I T O R
ECV- l ZW 20 x 40N
TC3 0 1
3 90000 1 1
ECV- l ZW 5 0 x 40N
TC302, 303
3 9 000009
222 2-80 8-6 1 809
TC304, 305
3 8 8 20080
R E LAY
RL3 0 1
700000 3 1
FBR-22 1D 0 1 2
CO N N E CTO R
S0-23 9
1 3 0 1
6 8000003
Wrapping Terminal C
9 1 1 00 0 0 8
Booster Heat Sink
8005 0 74 1
* * * * * MA I N C H ASS I S * * * * *
Ceramic Feed Thru ECK-Y l H 1 0 2WE
C5 0 1 - 5 06 ,
3 2 8 2 1 1 0 2
5 08 , 5 0 9 ,
5 1 1 -5 1 3 ,
5 1 5
Mylar
C5 1 7
3 6 8 2 5 2 2 3
R E S I ST O R
R5 0 1
4 1 1 4 3 4 7 3
Carbon Film
* * * * * 1 44 M H z CO N V E R T E R M A I N BOA R D * * * * *
PB- 1 9 25
6 04 1 9 25 0
Printed Circuit Board
0 1 9 2 5 0 A Z
P C B with Components
I C , F E T, T R A N S I ST O R
Q60 1
25000 1 0 1
IC
"
Q6 1 0
25000 1 2 8
Q60 2,605 ,6 06
2 3 8005 1 0
FET
Q6 04
2 2 3 0 7 3 0 0
Transistor
Q6 0 7-609
2 2 3 0 7 84 2
Q6 1 1 , 6 1 2
223 1 8 1 5 4
Q 6 0 3
2 2 3 205 3 0
#2205 84
20 pF
5 0 pF
80 pF
Desc r i p t i o n
5 0WV
0 . 0 2 2 µF
l/4S
TJ
47 k.11.
MC- 1 4 96G
7 8 L 0 8
3SK5 1
2SC 7 3 0
"
2S(: 7 84 R
"
2SC 1 8 1 5 Y
"
2SC 205 3
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