Only For Training And Service Purposes - LG GB220 Service Manual

3. TECHNICAL BRIEF
In continuous-burst mode, a data Read can traverse partition boundaries.
Upon initial power-up or return from reset, the device defaults to asynchronous arrayread mode.
Synchronous burst-mode reads are enabled by programming the Read Configuration Register. In
synchronous burst mode, output data is synchronized with a user-supplied clock signal. A WAIT signal
provides easy CPU-to-flash memory synchronization.
Designed for low-voltage applications, the device supports read operations with VCC at 1.8 V, and
erase and program operations with VPP at 1.8 V or 9.0 V. VCC and VPP can be tied together for a simple,
ultra-low power design. In addition to voltage flexibility, a dedicated VPP connection provides
complete data protection when VPP is less than VPPLK.
A Status Register provides status and error conditions of erase and program operations.
One-Time-Programmable (OTP) registers allow unique flash device identification that can be used to
increase flash content security. Also, the individual block-lock feature provides zero-latency block
locking and unlocking to protect against unwanted program or erase of the array.
The flash memory device offers three power savings features:
• Automatic Power Savings (APS) mode: The device automatically enters APS following a read-cycle
completion.
• Standby mode: Standby is initiated when the system deselects the device by deasserting CE#.
• Deep Power-Down (DPD) mode: DPD provides the lowest power consumption and is enabled by
programming in the Enhanced Configuration Register. DPD is initiatied by asserting the DPD pin.
LGE Internal Use Only
LGE Internal Use Only
Table 3_6_1 M18 Frequency combinations
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Copyright © 2007 LG Electronics. Inc. All right reserved.

Only for training and service purposes

Copyright © 2009 LG Electronics. Inc. All right reserved.
Only for training and service purposes