External Memory Interface - LG -P350 Service Manual

3.11 External memory interface

3.11.1. MSM7227
The MSM7227 device was designed to provide two distinct memory interfaces. EBI1 was targeted for
supporting DDR synchronous memory devices. EBI2 was targeted towards supporting slower asynchronous
devices such as LCD, NAND flash, SRAM, NOR flash etc. To support the high-bandwidth, high-density, and
low-latency requirements of the advanced on-chip applications, the MSM7227 IC has two high-speed, high-
performance memory slave interfaces: the external bus interface 1 (EBI1) and the stack memory interface
(SMI). To achieve higher bandwidth and better use of the memory device interface, the SMI accepts multiple
commands for the external memory
device. The SMI interface acts as a slave device to all of the bus masters within the MSM device. The masters
arbitrate to gain access to the SMI, and upon obtaining the access, they issue commands to the SMI. The bus
masters are connected to the SMI through an advanced extensible interface (AXI) bus bridge (or global
interconnect block) and communicate over a 64-bit, non-blocking AXI bus protocol. The AXI bus bridge
provides the arbitration logic for all of the bus masters.
EBI1 Features
- Support for only low-power memories at 1.8-V I/O power supply voltage
- AXI bus frequencies up to 133 MHz
- A 16-bit/32-bit static and dynamic memory interface
DDR SDRAM interface features include:
- Supports both 32-bit DDR SDRAM devices, up to 133-MHz bus speed
- Supports auto precharge and manual precharge
- Supports partial refresh
- Separate CKE pin per chip-select to support partial operation mode
- Idle power down to save idling power consumption
EBI2 Features
- Support for asynchronous FLASH and SRAM(16bit & 8bit).
- Interface support for byte addressable 16bit devices(UB_N & LB_N signals).
- 2Mbytes of memory per chip select.
- Support for 8 bit/16bit wide NAND flash.
- Support for parallel LCD interfaces, port mapped of memory mapped(8 or 16 bit)
3.11.2.LG-P350 External memory Interface
-Multi Chip Package : DDR SDRAM and NAND Flash merged 1 package
-2Gbit Mobile DDR SDRAM / 4Gbit NAND Flash
Part Name
H8BCS0UN0MCR-
4EM
LGE Internal Use Only
Interface Spec
Product Gr Maker
NAND HINIX
SDRAM
Operation Voltage
1.8V
1.8V
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3. TECHNICAL BRIEF
Speed
42ns
200MHz
Only for training and service purposes