LG -A258 Service Manual page 151

Level Location No.
C100,
C230,
Capacitor, Ceramic,
6 C312,
Chip
C316,
C335
6 R241 Resistor, Chip
C121,
C206,
C207,
C231,
C239,
Capacitor, Ceramic,
6 C240,
Chip
C246,
C255,
C342,
C345,
C351
6 Q301 TR, Bipolar
6 R225 Resistor, Chip
C212,
C213,
C214,
Capacitor, Ceramic,
6 C216,
Chip
C217,
C241,
C341
6 U100 IC, MCP, NAND
Capacitor, Ceramic,
6 C128
Chip
6 FB300 Filter, Bead
C249,
C250, Capacitor, Ceramic,
6
C251, Chip
C320
C300, Inductor, Multilayer,
6
C307 Chip
LGE Internal Use Only
12. EXPLODED VIEW & REPLACEMENT PART LIST
Description PartNumber
ECCH0007804
ERHY0000105
ECZH0001215
EQBN0019201
ERHZ0000206
ECCH0000198
EUSY0425901
ECCH0007803
SFBH0006806
ECCH0000120
ELCH0001405
Spec
CL05A225MP5NSNC 2.2uF 20% 10V X5R -
55TO+85C 1005 R/TP 0.5MM SAMSUNG ELECTRO-
MECHANICS CO., LTD.
MCR01MZP5F51R0 51OHM 1% 1/16W 1005 R/TP -
ROHM.
C1005X5R1A105KT000F 1uF 10% 10V X5R -
55TO+85C 1005 R/TP - TDK KOREA
COOPERATION
KTC3770V NPN 3V 20V 12V 100mA 999A 999
100mW VSM R/TP 3P KEC CORPORAITION
MCR01MZP5F10R0 10OHM 1% 1/16W 1005 R/TP -
ROHM.
CL05A225MQ5NSNC 2.2uF 20% 6.3V X5R -
55TO+85C 1005 R/TP . SAMSUNG ELECTRO-
MECHANICS CO., LTD.
H8BCS0QG0MMR-46M NAND/1G SDRAM/512M
0VTO0V 8.0x9.0x1.0 TR 130P NAND+DRAM BGA -
HYNIX SEMICONDUCTOR INC.
CL10A106MP8NNNC 10uF 20% 10V X5R -55TO+85C
1608 R/TP 0.8MM SAMSUNG ELECTRO-
MECHANICS CO., LTD.
CIM05J601NC 600 ohm 1.0X0.5X0.5 25% 0.6 ohm
0.3A SMD R/TP 2P 0 SAMSUNG ELECTRO-
MECHANICS CO., LTD.
MCH155A390J 39pF 5% 50V NP0 -55TO+125C 1005
R/TP - ROHM Semiconductor KOREA
CORPORATION
LL1005-FHL3N3S 3.3NH 0.3NH - 400mA 0.16OHM
9.1GHZ 8 SHIELD NONE 1.0X0.5X0.5MM R/TP
TOKO, INC.
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Remark
Only for training and service purposes