Page 1 ® Relion 670 series Transformer protection RET670 ANSI Application manual...
Page 4 Copyright This document and parts thereof must not be reproduced or copied without written permission from ABB, and the contents thereof must not be imparted to a third party, nor used for any unauthorized purpose. The software and hardware described in this document is furnished under a license and may be used or disclosed only in accordance with the terms of such license.
Page 5 In case any errors are detected, the reader is kindly requested to notify the manufacturer. Other than under explicit contractual commitments, in no event shall ABB be responsible or liable for any loss or damage resulting from the use of this manual or the application of the equipment.
Page 6 (EMC Directive 2004/108/EC) and concerning electrical equipment for use within specified voltage limits (Low-voltage directive 2006/95/EC). This conformity is the result of tests conducted by ABB in accordance with the product standards EN 50263 and EN 60255-26 for the EMC directive, and with the product standards EN 60255-1 and EN 60255-27 for the low voltage directive.
Page 7: Table Of Contents
Table of contents Table of contents Section 1 Introduction................15 Introduction to the application manual............15 About the complete set of manuals for an IED........15 About the application manual............16 Intended audience................17 Related documents................17 Revision notes...................17 Section 2 Requirements..............19 Current transformer requirements............19 Current transformer classification............19 Conditions..................20 Fault current..................21 Secondary wire resistance and additional load.........21...
Page 8 Table of contents Setting parameters................62 Local human-machine interface..............69 Human machine interface ..............69 Local HMI related functions...............70 Introduction...................70 General setting parameters............70 Indication LEDs.................71 Introduction...................71 Setting parameters...............72 Basic IED functions.................74 Self supervision with internal event list..........74 Application..................74 Setting parameters...............74 Time synchronization.................75 Application..................75 Setting guidelines.................75 Setting parameters...............77 Parameter setting groups..............81...
Page 9 Table of contents Setting guidelines.................86 Setting parameters...............86 Signal matrix for binary outputs SMBO ..........86 Application..................87 Setting guidelines.................87 Setting parameters...............87 Signal matrix for mA inputs SMMI.............87 Application..................87 Setting guidelines.................87 Setting parameters...............87 Signal matrix for analog inputs SMAI..........88 Application..................88 Frequency values.................88 Setting guidelines.................89 Setting parameters...............94 Summation block 3 phase 3PHSUM..........95 Application..................95...
Page 10 Table of contents Connection examples for high impedance differential protection..................141 Setting guidelines...............144 Setting parameters..............159 Impedance protection ................159 Distance measuring zones, quadrilateral characteristic ZMQPDIS (21), ZMQAPDIS (21), ZDRDIR (21D)......159 Identification................159 Application..................159 Setting guidelines...............177 Setting parameters..............187 Distance measuring zone, quadrilateral characteristic for series compensated lines ZMCPDIS (21), ZMCAPDIS (21), ZDSRDIR (21D)....................189 Application..................189...
Page 11 Table of contents Setting parameters..............311 Faulty phase identification with load encroachment FMPSPDIS (21)....................311 Application..................312 Setting guidelines...............312 Setting parameters..............315 Distance protection zone, quadrilateral characteristic, separate settings ZMRPDIS (21), ZMRAPDIS (21) and ZDRDIR (21D)..316 Application..................316 Setting guidelines...............332 Setting parameters..............339 Phase selection, quadrilateral characteristic with settable angle FRPSPDIS (21)................341 Application..................341 Load encroachment characteristics..........347...
Page 12 Table of contents Application..................401 Setting guidelines...............403 Setting parameters..............413 Instantaneous residual overcurrent protection EFPIOC (50N)..418 Application..................419 Setting guidelines...............419 Setting parameters..............422 Four step residual overcurrent protection, zero, negative sequence direction EF4PTOC (51N/67N)........422 Application..................422 Setting guidelines...............424 Setting parameters..............435 Four step directional negative phase sequence overcurrent protection NS4PTOC (46I2)............440 Application..................440 Setting guidelines...............442...
Page 13 Table of contents Setting guidelines...............487 Setting parameters..............491 Broken conductor check BRCPTOC (46)........493 Application..................493 Setting guidelines...............493 Setting parameters..............494 Capacitor bank protection CBPGAPC..........494 Application..................494 Setting guidelines...............498 Setting parameters..............501 Negativ sequence time overcurrent protection for machines NS2PTOC (46I2)................502 Application..................502 Setting guidelines...............505 Setting parameters..............508 Voltage protection.................509 Two step undervoltage protection UV2PTUV (27)......509 Application..................509...
Page 14 Table of contents Frequency protection................542 Underfrequency protection SAPTUF (81)........542 Application..................542 Setting guidelines...............543 Setting parameters..............544 Overfrequency protection SAPTOF (81).........545 Application..................545 Setting guidelines...............545 Setting parameters..............546 Rate-of-change frequency protection SAPFRC (81).......547 Application..................547 Setting guidelines...............547 Setting parameters..............548 Multipurpose protection................549 General current and voltage protection CVGAPC......549 Application..................549 Setting guidelines...............555 Setting parameters..............565...
Page 15 Table of contents Configuration guidelines.............617 Interlocking for line bay ABC_LINE (3)........617 Interlocking for bus-coupler bay ABC_BC (3)......623 Interlocking for transformer bay AB_TRAFO (3)......628 Interlocking for bus-section breaker A1A2_BS (3)......630 Interlocking for bus-section disconnector A1A2_DC (3).....633 Interlocking for busbar grounding switch BB_ES (3)....641 Interlocking for double CB bay DB (3)........648 Interlocking for breaker-and-a-half diameter BH (3)....650 Horizontal communication via GOOSE for interlocking...
Page 16 Table of contents Scheme communication logic for residual overcurrent protection ECPSCH (85)..............729 Application..................729 Setting guidelines...............730 Setting parameters..............731 Current reversal and weak-end infeed logic for residual overcurrent protection ECRWPSCH (85)........731 Application..................732 Setting guidelines...............733 Setting parameters..............735 Logic.....................735 Tripping logic SMPPTRC (94)............735 Application..................735 Setting guidelines...............740 Setting parameters..............741 Trip matrix logic TMAGGIO.............741...
Page 17 Table of contents Measurement...................748 Application..................748 Zero clamping................750 Setting guidelines...............751 Setting parameters..............761 Event counter CNTGGIO..............775 Identification................775 Application..................775 Setting parameters..............775 Event function EVENT..............775 Introduction.................776 Setting guidelines...............776 Setting parameters..............777 Logical signal status report BINSTATREP........779 Application..................779 Setting guidelines...............780 Setting parameters..............780 Measured value expander block RANGE_XP.........780 Application..................780 Setting guidelines...............780 Disturbance report DRPRDRE............780...
Page 18 Table of contents Pulse-counter logic PCGGIO............802 Application..................802 Setting guidelines...............803 Setting parameters..............803 Function for energy calculation and demand handling ETPMMTR..................804 Application..................804 Setting guidelines...............805 Setting parameters..............806 Section 4 Station communication............809 Overview....................809 IEC 61850-8-1 communication protocol..........809 Application IEC 61850-8-1...............809 Setting guidelines................811 Setting parameters................811 IEC 61850 generic communication I/O functions SPGGIO, SP16GGIO..................812 Application..................812...
Page 19 Section 5 Remote communication.............845 Binary signal transfer................845 Application..................845 Communication hardware solutions...........845 Setting guidelines................847 Setting parameters................849 Section 6 Configuration..............853 Introduction...................853 Description of configuration RET670............854 Introduction..................854 Description of configuration A30..........854 Description of configuration B30..........857 Description of configuration B40..........858 Section 7 Glossary................871 Application manual...
Page 21: Section 1 Introduction
Section 1 1MRK504116-UUS C Introduction Section 1 Introduction About this chapter This chapter introduces the user to the manual as such. Introduction to the application manual 1.1.1 About the complete set of manuals for an IED The user’s manual (UM) is a complete set of five different manuals: Engineeringmanual Installation and Commissioning manual...
Page 22: About The Application Manual
The chapter “Remote communication“ describes the remote end data communication possibilities through binary signal transferring. • The chapter “Configuration” describes the preconfiguration of the IED and its complements. • The chapter “Glossary” is a list of terms, acronyms and abbreviations used in ABB technical documentation. Application manual...
Page 23: Intended Audience
IEC 61850 Data objects list for 670 series 1MRK 500 091-WUS Engineering manual 670 series 1MRK 511 240-UUS Communication set-up for Relion 670 series 1MRK 505 260-UEN More information can be found on www.abb.com/substationautomation. 1.1.5 Revision notes Revision Description Minor corrections made...
Page 25: Section 2 Requirements
Section 2 1MRK504116-UUS C Requirements Section 2 Requirements About this chapter This chapter describes current and voltage transformer requirements. Current transformer requirements The performance of a protection function will depend on the quality of the measured current signal. Saturation of the current transformer (CT) will cause distortion of the current signal and can result in a failure to operate or cause unwanted operations of some functions.
Page 26: Conditions
Section 2 1MRK504116-UUS C Requirements The low remanence type has a specified limit for the remanent flux. This CT is made with a small air gap to reduce the remanence to a level that does not exceed 10% of the saturation flux.
Page 27: Fault Current
Section 2 1MRK504116-UUS C Requirements It is difficult to give general recommendations for additional margins for remanence to avoid the minor risk of an additional time delay. They depend on the performance and economy requirements. When current transformers of low remanence type (for example, TPY, PR) are used, normally no additional margin is needed.
Page 28: General Current Transformer Requirements
CT (TPZ) is not well defined as far as the phase angle error is concerned. If no explicit recommendation is given for a specific function we therefore recommend contacting ABB to confirm that the non remanence type can be used. The CT requirements for the different functions below are specified as a rated equivalent limiting secondary e.m.f.
Page 29: Distance Protection
Section 2 1MRK504116-UUS C Requirements æ ö × ³ = × × ç ÷ a lre q è ø (Equation 2) EQUATION1673 V1 EN where: The rated primary current of the power transformer (A) Maximum primary fundamental frequency current that passes two main CTs and the power transformer (A) The rated primary CT current (A) The rated secondary CT current (A)
Page 30: Restricted Ground Fault Protection (Low Impedance Differential)
Section 2 1MRK504116-UUS C Requirements × æ ö ³ k ma x × ç ÷ a lre q è ø (Equation 4) EQUATION1675 V1 EN × æ ö ³ kzone 1 × ç ÷ a lre q è ø (Equation 5) EQUATION1676 V1 EN where: Maximum primary fundamental frequency current for close-in forward and...
Page 31 Section 2 1MRK504116-UUS C Requirements Neutral CTs and phase CTs for solidly ground transformers The neutral CT and the phase CTs must have a rated equivalent secondary e.m.f. E that is larger than or equal to the maximum of the required secondary e.m.f. E below: alreq æ...
Page 32 Section 2 1MRK504116-UUS C Requirements Neutral CTs and phase CTs for impedance grounded transformers The neutral CT and phase CTs must have a rated equivalent secondary e.m.f. E that is larger than or equal to the required secondary e.m.f. E below: alreq æ...
Page 33: Current Transformer Requirements For Cts According To Other Standards
Section 2 1MRK504116-UUS C Requirements connection) for example, in substations with breaker-and-a-half or double-busbar double- breaker arrangement or if the transformer has a T-connection to different busbars, there is a risk that the CTs can be exposed for higher fault currents than the considered phase- to-ground fault currents above.
Page 34: Current Transformers According To Iec 60044-1, Class Px, Iec 60044-6, Class Tps (And Old British Standard, Class X)
Section 2 1MRK504116-UUS C Requirements > 2 max alreq (Equation 11) EQUATION1383 V2 EN 2.1.7.2 Current transformers according to IEC 60044-1, class PX, IEC 60044-6, class TPS (and old British Standard, class X) CTs according to these classes are specified approximately in the same way by a rated knee-point e.m.f.
Page 35: Voltage Transformer Requirements
Section 2 1MRK504116-UUS C Requirements The CTs according to class C must have a calculated rated equivalent limiting secondary e.m.f. E that fulfills the following: alANSI > max imum of E alANSI alreq (Equation 14) EQUATION1384 V1 EN A CT according to ANSI/IEEE is also specified by the knee-point voltage V kneeANSI that is graphically defined from an excitation curve.
Page 36: Iec 61850-9-2Le Merging Unit Requirements
Section 2 1MRK504116-UUS C Requirements software. The SNTP server should be stable, that is, either synchronized from a stable source like GPS, or local without synchronization. Using a local SNTP server without synchronization as primary or secondary server in a redundant configuration is not recommended.
Page 37: Section 3 Ied Application
General IED application RET670 provides fast and selective protection, monitoring and control for two- and three- winding transformers, autotransformers, generator-transformer units, phase shifting transformers, special railway transformers and shunt reactors. The transformer IED is...
Page 38 Out of Step function is available to separate power system sections close to electrical centre at occurring out of step. RET670 can be used in applications with the IEC 61850-9-2LE process bus with up to two Merging Units (MU). Each MU has eight analogue channels, normally four current and four voltages.
Page 39: Analog Inputs
Section 3 1MRK504116-UUS C IED application The wide application flexibility makes this product an excellent choice for both new installations and the refurbishment of existing installations. Analog inputs 3.2.1 Introduction Analog input channels must be configured and set properly to get correct measurement results and correct protection operations.
Page 40 Section 3 1MRK504116-UUS C IED application Setting of current channels The direction of a current to the IED is depending on the connection of the CT. Unless indicated otherwise, the main CTs are supposed to be Wye (star) connected and can be connected with the grounding point to the object or from the object.
Page 41 Section 3 1MRK504116-UUS C IED application Line Transformer Line Reverse Forward Definition of direction for directional functions Transformer protection Line protection Setting of current input: Setting of current input: Setting of current input: Set parameter Set parameter Set parameter CT_WyePoint with CT_WyePoint with CT_WyePoint with Transformer as...
Page 42 Section 3 1MRK504116-UUS C IED application Transformer Line Forward Reverse Definition of direction for directional Transformer and line functions Line protection Setting of current input: Setting of current input: Set parameter Set parameter CT_WyePoint with CT_WyePoint with Transformer as Transformer as reference object.
Page 43 Section 3 1MRK504116-UUS C IED application line and transformer protection functions are configured to the different inputs. The CT direction for the current channels to the line protection is set with the line as reference object and the directional functions of the line protection shall be set to Forward to protect the line.
Page 44 Section 3 1MRK504116-UUS C IED application Busbar Busbar Protection en06000196_ansi.vsd ANSI06000196 V1 EN Figure 6: Example how to set CT_WyePoint parameters in the IED For busbar protection it is possible to set the CT_WyePoint parameters in two ways. The first solution will be to use busbar as a reference object. In that case for all CT inputs marked with 1 in figure 6, set CT_WyePoint = ToObject, and for all CT inputs marked with 2 in figure 6, set CT_WyePoint = FromObject.
Page 45 Section 3 1MRK504116-UUS C IED application Regardless which one of the above two options is selected busbar differential protection will behave correctly. The main CT ratios must also be set. This is done by setting the two parameters CTsec and CTprim for each current channel. For a 1000/5 A CT the following setting shall be used: •...
Page 46 Section 3 1MRK504116-UUS C IED application It shall be noted that depending on national standard and utility practices, the rated secondary current of a CT has typically one of the following values: • • However in some cases the following rated secondary currents are used as well: •...
Page 47 Section 3 1MRK504116-UUS C IED application SMAI_20 CT 600/5 Star Connected ANSI3000002-2-en.vsd Protected Object ANSI13000002 V2 EN Figure 8: Wye connected three-phase CT set with wye point towards the protected object Where: The drawing shows how to connect three individual phase currents from a wye connected three- phase CT set to the three CT inputs of the IED.
Page 48 Section 3 1MRK504116-UUS C IED application These three connections are the links between the three current inputs and the three input channels of the preprocessing function block 4). Depending on the type of functions, which need this current information, more than one preprocessing block might be connected in parallel to the same three physical CT inputs.
Page 49 Section 3 1MRK504116-UUS C IED application SMAI_20_2 BLOCK AI3P REVROT ^GRP2L1 ^GRP2L2 ^GRP2L3 CT 800/1 ^GRP2N Star Connected ANSI11000026-4-en.vsd Protected Object ANSI11000026 V4 EN Figure 9: Wye connected three-phase CT set with its star point away from the protected object In the example in figure 9 case everything is done in a similar way as in the above...
Page 50 Section 3 1MRK504116-UUS C IED application SMAI2 BLOCK AI3P AI 01 (I) ^GRP2_A ^GRP2_B ^GRP2_C AI 02 (I) ^GRP2N TYPE AI 03 (I) CT 800/1 Wye Connected AI 04 (I) AI 05 (I) AI 06 (I) Protected Object ANSI06000644-2-en.vsd ANSI06000644 V2 EN Figure 10: Wye connected three-phase CT set with its star point away from the protected object and the residual/ neutral current connected to the IED...
Page 51 Section 3 1MRK504116-UUS C IED application is a connection made in the Signal Matrix tool (SMT), Application configuration tool (ACT), which connects the residual/neutral current input to the fourth input channel of the preprocessing function block 6). Note that this connection in SMT shall not be done if the residual/ neutral current is not connected to the IED.
Page 52 Section 3 1MRK504116-UUS C IED application SMAI_20 IA-IB IB-IC IC-IA ANSI11000027-2-en.vsd Protected Object ANSI11000027 V2 EN Figure 11: Delta DAB connected three-phase CT set Application manual...
Page 53 Section 3 1MRK504116-UUS C IED application Where: shows how to connect three individual phase currents from a delta connected three-phase CT set to three CT inputs of the IED. is the TRM where these current inputs are located. It shall be noted that for all these current inputs the following setting values shall be entered.
Page 54 Section 3 1MRK504116-UUS C IED application SMAI_20 IA-IC IB-IA IC-IB ANSI11000028-2-en.vsd Protected Object ANSI11000028 V2 EN Figure 12: Delta DAC connected three-phase CT set In this case, everything is done in a similar way as in the above described example, except that for all used current inputs on the TRM the following setting parameters shall be entered: =800A...
Page 55 Section 3 1MRK504116-UUS C IED application For correct terminal designations, see the connection diagrams valid for the delivered IED. Protected Object SMAI_20_2 BLOCK AI3P REVROT ^GRP2_A ^GRP2_B ^GRP2_C ^GRP2_N ANSI11000029-3-en.vsd ANSI11000029 V3 EN Figure 13: Connections for single-phase CT input Application manual...
Page 56 Section 3 1MRK504116-UUS C IED application Where: shows how to connect single-phase CT input in the IED. is TRM where these current inputs are located. It shall be noted that for all these current inputs the following setting values shall be entered. For connection (a) shown in figure 13: CT prim = 1000 A CT sec = 1A...
Page 57 Section 3 1MRK504116-UUS C IED application (X1) (X1) (X1) (H1) (H1) (H1) (H2) (X2) (H2) (X2) (H2) (X2) ANSI11000175_1_en.vsd ANSI11000175 V1 EN Figure 14: Commonly used markings of VT terminals Where: is the symbol and terminal marking used in this document. Terminals marked with a dot indicate the primary and secondary winding terminals with the same (positive) polarity is the equivalent symbol and terminal marking used by IEC (ANSI) standard for phase-to- ground connected VTs...
Page 58 Section 3 1MRK504116-UUS C IED application AI 07 (I) SMAI2 BLOCK AI3P AI 08 (V) ^GRP2_A ^GRP2_B AI 09 (V) ^GRP2_C ^GRP2N #Not used AI 10 (V) TYPE AI 11 (V) AI 12 (V) ANSI06000599-2-en.vsd ANSI06000599 V2 EN Figure 15: A Three phase-to-ground connected VT Where: shows how to connect three secondary phase-to-ground voltages to three VT inputs on the...
Page 59 Section 3 1MRK504116-UUS C IED application are three connections made in Signal Matrix Tool (SMT), which connect these three voltage inputs to first three input channels of the preprocessing function block 5). Depending on the type of functions which need this voltage information, more then one preprocessing block might be connected in parallel to these three VT inputs.
Page 60 Section 3 1MRK504116-UUS C IED application 13.8 13.8 AI 07(I) SMAI2 BLOCK AI3P AI 08 (V) ^GRP2_A (A-B) ^GRP2_B (B-C) AI 09 (V) ^GRP2_C (C-A) ^GRP2N #Not Used TYPE AI 10(V) AI 11(V) AI 12(V) ANSI06000600-3-en.vsd ANSI06000600 V3 EN Figure 16: A Two phase-to-phase connected VT Where: shows how to connect the secondary side of a phase-to-phase VT to the VT inputs on the IED...
Page 61 Section 3 1MRK504116-UUS C IED application are three connections made in the Signal Matrix tool (SMT), Application configuration tool (ACT), which connects these three voltage inputs to first three input channels of the preprocessing function block 5). Depending on the type of functions, which need this voltage information, more than one preprocessing block might be connected in parallel to these three VT inputs shows that in this example the fourth (that is, residual) input channel of the preprocessing block...
Page 62 Section 3 1MRK504116-UUS C IED application AI 07 (I) AI 08 (V) SMAI2 AI 09 (V) BLOCK AI3P ^GRP2_A # Not Used AI 10 (V) ^GRP2_B # Not Used ^GRP2_C # Not Used AI 11 (V) +3Vo ^GRP2N TYPE AI 12 (V) ANSI06000601-2-en.vsd ANSI06000601 V2 EN Figure 17:...
Page 63 Section 3 1MRK504116-UUS C IED application Where: shows how to connect the secondary side of the open delta VT to one VT input on the IED. +3Vo shall be connected to the IED is the TRM where this voltage input is located. It shall be noted that for this voltage input the following setting values shall be entered: ×...
Page 64 Section 3 1MRK504116-UUS C IED application Example how to connect the open delta VT to the IED for low impedance grounded or solidly grounded power systems Figure gives an example about the connection of an open delta VT to the IED for low impedance grounded or solidly grounded power systems.
Page 65 Section 3 1MRK504116-UUS C IED application AI07 (I) AI08 (V) SMAI2 AI09 (V) BLOCK AI3P ^GRP2_A # Not Used AI10 (V) # Not Used ^GRP2_B # Not Used ^GRP2_C +3Vo AI11 (V) ^GRP2N TYPE AI12 (V) ANSI06000602-2-en.vsd ANSI06000602 V2 EN Figure 18: Open delta connected VT in low impedance or solidly grounded power system Application manual...
Page 66 Section 3 1MRK504116-UUS C IED application Where: shows how to connect the secondary side of open delta VT to one VT input in the IED. +3Vo shall be connected to the IED. is TRM where this voltage input is located. It shall be noted that for this voltage input the following setting values shall be entered: ×...
Page 67 Section 3 1MRK504116-UUS C IED application Example on how to connect a neutral point VT to the IED Figure gives an example on how to connect a neutral point VT to the IED. This type of VT connection presents secondary voltage proportional to V to the IED.
Page 68: Setting Parameters
Section 3 1MRK504116-UUS C IED application Where: shows how to connect the secondary side of neutral point VT to one VT input in the IED. shall be connected to the IED. is the TRM or AIM where this voltage input is located. For this voltage input the following setting values shall be entered: VTprim 3.81...
Page 69 Section 3 1MRK504116-UUS C IED application Table 1: AISVBAS Non group settings (basic) Name Values (Range) Unit Step Default Description PhaseAngleRef TRM40-Ch1 TRM40-Ch1 Reference channel for phase angle TRM40-Ch2 presentation TRM40-Ch3 TRM40-Ch4 TRM40-Ch5 TRM40-Ch6 TRM40-Ch7 TRM40-Ch8 TRM40-Ch9 TRM40-Ch10 TRM40-Ch11 TRM40-Ch12 TRM41-Ch1 TRM41-Ch2 TRM41-Ch3...
Page 70 Section 3 1MRK504116-UUS C IED application Table 2: TRM_12I Non group settings (basic) Name Values (Range) Unit Step Default Description CT_WyePoint1 FromObject ToObject ToObject= towards protected object, ToObject FromObject= the opposite CTsec1 1 - 10 Rated CT secondary current CTprim1 1 - 99999 3000 Rated CT primary current...
Page 71 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description CTprim10 1 - 99999 3000 Rated CT primary current CT_WyePoint11 FromObject ToObject ToObject= towards protected object, ToObject FromObject= the opposite CTsec11 1 - 10 Rated CT secondary current CTprim11 1 - 99999 3000...
Page 72 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description VTprim8 0.05 - 2000.00 0.05 400.00 Rated VT primary voltage VTsec9 0.001 - 999.999 0.001 110.000 Rated VT secondary voltage VTprim9 0.05 - 2000.00 0.05 400.00 Rated VT primary voltage VTsec10 0.001 - 999.999 0.001...
Page 73 Section 3 1MRK504116-UUS C IED application Table 5: TRM_7I_5U Non group settings (basic) Name Values (Range) Unit Step Default Description CT_WyePoint1 FromObject ToObject ToObject= towards protected object, ToObject FromObject= the opposite CTsec1 1 - 10 Rated CT secondary current CTprim1 1 - 99999 3000 Rated CT primary current...
Page 74 Section 3 1MRK504116-UUS C IED application Table 6: TRM_9I_3U Non group settings (basic) Name Values (Range) Unit Step Default Description CT_WyePoint1 FromObject ToObject ToObject= towards protected object, ToObject FromObject= the opposite CTsec1 1 - 10 Rated CT secondary current CTprim1 1 - 99999 3000 Rated CT primary current...
Page 75: Local Human-Machine Interface
Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description VTprim11 0.05 - 2000.00 0.05 400.00 Rated VT primary voltage VTsec12 0.001 - 999.999 0.001 110.000 Rated VT secondary voltage VTprim12 0.05 - 2000.00 0.05 400.00 Rated VT primary voltage Local human-machine interface 3.3.1 Human machine interface...
Page 76: Local Hmi Related Functions
Section 3 1MRK504116-UUS C IED application IEC07000077 V1 EN Figure 20: Medium graphic HMI, 15 controllable objects 3.3.2 Local HMI related functions 3.3.2.1 Introduction The local HMI can be adapted to the application configuration and to user preferences. • Function block LocalHMI •...
Page 77: Indication Leds
Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description DefaultScreen 0 - 0 Default screen EvListSrtOrder Latest on top Latest on top Sort order of event list Oldest on top SymbolFont Symbol font for Single Line Diagram ANSI 3.3.3 Indication LEDs...
Page 78: Setting Parameters
Section 3 1MRK504116-UUS C IED application 3.3.3.2 Setting parameters Table 8: LEDGEN Non group settings (basic) Name Values (Range) Unit Step Default Description Operation Disabled Disabled Operation mode for the LED function Enabled tRestart 0.0 - 100.0 Defines the disturbance length tMax 0.0 - 100.0 Maximum time for the definition of a...
Page 79 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description SeqTypeLED8 Follow-S Follow-S sequence type for LED 8 Follow-F LatchedAck-F-S LatchedAck-S-F LatchedColl-S LatchedReset-S SeqTypeLED9 Follow-S Follow-S Sequence type for LED 9 Follow-F LatchedAck-F-S LatchedAck-S-F LatchedColl-S LatchedReset-S SeqTypeLED10 Follow-S Follow-S Sequence type for LED 10...
Page 80: Basic Ied Functions
Section 3 1MRK504116-UUS C IED application Basic IED functions 3.4.1 Self supervision with internal event list 3.4.1.1 Application The protection and control IEDs have many functions included . The included self- supervision with internal event list function block provides good supervision of the IED.
Page 81: Time Synchronization
Section 3 1MRK504116-UUS C IED application 3.4.2 Time synchronization 3.4.2.1 Application Use time synchronization to achieve a common time base for the IEDs in a protection and control system. This makes it possible to compare events and disturbance data between all IEDs in the system. Time-tagging of internal events and disturbances are an excellent help when evaluating faults.
Page 82 Section 3 1MRK504116-UUS C IED application TimeSynch When the source of the time synchronization is selected on the local HMI, the parameter is called TimeSynch. The time synchronization source can also be set from PCM600. The setting alternatives are: FineSyncSource which can have the following values: •...
Page 83: Setting Parameters
Section 3 1MRK504116-UUS C IED application The parameter SyncMaster defines if the IED is a master, or not a master for time synchronization in a system of IEDs connected in a communication network (IEC61850-8-1). The SyncMaster can have the following values: •...
Page 84 Section 3 1MRK504116-UUS C IED application Table 9: TIMESYNCHGEN Non group settings (basic) Name Values (Range) Unit Step Default Description CoarseSyncSrc Disabled Disabled Coarse time synchronization source SNTP FineSyncSource Disabled Disabled Fine time synchronization source GPS+SPA GPS+LON GPS+BIN SNTP GPS+SNTP IRIG-B GPS+IRIG-B SyncMaster...
Page 85 Section 3 1MRK504116-UUS C IED application Table 12: DSTBEGIN Non group settings (basic) Name Values (Range) Unit Step Default Description MonthInYear January March Month in year when daylight time starts February March April June July August September October November December DayInWeek Sunday Sunday...
Page 86 Section 3 1MRK504116-UUS C IED application Table 13: DSTEND Non group settings (basic) Name Values (Range) Unit Step Default Description MonthInYear January October Month in year when daylight time ends February March April June July August September October November December DayInWeek Sunday Sunday...
Page 87: Parameter Setting Groups
Section 3 1MRK504116-UUS C IED application 3.4.3 Parameter setting groups 3.4.3.1 Application Six sets of settings are available to optimize IED operation for different power system conditions. By creating and switching between fine tuned setting sets, either from the local HMI or configurable binary inputs, results in a highly adaptable IED that can cope with a variety of power system scenarios.
Page 88: Test Mode Functionality Test
Section 3 1MRK504116-UUS C IED application Table 17: SETGRPS Non group settings (basic) Name Values (Range) Unit Step Default Description ActiveSetGrp SettingGroup1 SettingGroup1 ActiveSettingGroup SettingGroup2 SettingGroup3 SettingGroup4 SettingGroup5 SettingGroup6 MAXSETGR 1 - 6 Max number of setting groups 1-6 3.4.4 Test mode functionality TEST 3.4.4.1 Application...
Page 89: Application
CHNGLCK input, that logic must be designed so that it cannot permanently issue a logical one to the CHNGLCK input. If such a situation would occur in spite of these precautions, then please contact the local ABB representative for remedial action. Application manual...
Page 90: Setting Parameters
Section 3 1MRK504116-UUS C IED application 3.4.5.2 Setting parameters Table 19: CHNGLCK Non group settings (basic) Name Values (Range) Unit Step Default Description Operation LockHMI and Com LockHMI and Com Operation mode of change lock LockHMI, EnableCom EnableHMI, LockCom 3.4.6 IED identifiers 3.4.6.1 Application...
Page 91: Setting Parameters
Section 3 1MRK504116-UUS C IED application • IEDProdType • ProductDef • FirmwareVer • SerialNo • OrderingNo • ProductionDate The settings are visible on the local HMI , under Main menu/Diagnostics/IED status/ Product identifiers They are very helpful in case of support process (such as repair or maintenance). 3.4.7.2 Setting parameters The function does not have any parameters available in the local HMI or PCM600.
Page 92: Application
Section 3 1MRK504116-UUS C IED application 3.4.8.1 Application The rated system frequency is set under Main menu/General settings/ Power system/ Primary Values in the local HMI and PCM600 parameter setting tree. 3.4.8.2 Setting guidelines Set the system rated frequency. Refer to section "Signal matrix for analog inputs SMAI"...
Page 93: Application
Section 3 1MRK504116-UUS C IED application 3.4.10.1 Application The Signal matrix for binary outputs function SMBO is used within the Application Configuration tool in direct relation with the Signal Matrix tool. SMBO represents the way binary outputs are sent from one IED configuration. It is important that SMBO inputs are connected when SMBOs are connected to physical outputs through the Signal Matrix Tool.
Page 94: Signal Matrix For Analog Inputs Smai
Section 3 1MRK504116-UUS C IED application 3.4.12 Signal matrix for analog inputs SMAI 3.4.12.1 Application Signal matrix for analog inputs function (SMAI), also known as the preprocessor function, processes the analog signals connected to it and gives information about all aspects of the analog signals connected, like the RMS value, phase angle, frequency, harmonic content, sequence components and so on.
Page 95: Setting Guidelines
Section 3 1MRK504116-UUS C IED application setting must still be Ph-Ph and this has to be accounted for when setting IntBlockLevel. If SMAI setting ConnectionType is Ph-N and the same voltage is connected to all three SMAI inputs, the positive sequence voltage will be zero and the frequency functions will not work properly.
Page 96 Section 3 1MRK504116-UUS C IED application ConnectionType: Connection type for that specific instance (n) of the SMAI (if it is Ph- N or Ph-Ph). Depending on connection type setting the not connected Ph-N or Ph-Ph outputs will be calculated. Negation: If the user wants to negate the 3ph signal, it is possible to choose to negate only the phase signals Negate3Ph, only the neutral signal NegateN or both Negate3Ph +N.
Page 97 Section 3 1MRK504116-UUS C IED application Task time group 1 SMAI instance 3 phase group SMAI1:1 SMAI2:2 SMAI3:3 AdDFTRefCh7 SMAI4:4 SMAI5:5 SMAI6:6 SMAI7:7 SMAI8:8 SMAI9:9 SMAI10:10 SMAI11:11 SMAI12:12 Task time group 2 SMAI instance 3 phase group SMAI1:13 AdDFTRefCh4 SMAI2:14 SMAI3:15 SMAI4:16 SMAI5:17...
Page 98 Section 3 1MRK504116-UUS C IED application Example 1 SMAI1:13 BLOCK SPFCOUT DFTSPFC AI3P ^GRP1_A ^GRP1_B ^GRP1_C SMAI1:1 ^GRP1_N BLOCK SPFCOUT TYPE DFTSPFC AI3P ^GRP1_A ^GRP1_B ^GRP1_C ^GRP1_N TYPE SMAI1:25 BLOCK SPFCOUT DFTSPFC AI3P ^GRP1_A ^GRP1_B ^GRP1_C ^GRP1_N TYPE ANSI07000198.vsd ANSI07000198 V1 EN Figure 23: Configuration for using an instance in task time group 1 as DFT reference Assume instance SMAI7:7 in task time group 1 has been selected in the configuration...
Page 99 Section 3 1MRK504116-UUS C IED application SMAI1:1 BLOCK SPFCOUT DFTSPFC AI3P ^GRP1_A ^GRP1_B ^GRP1_C SMAI1:13 ^GRP1_N BLOCK SPFCOUT TYPE DFTSPFC AI3P ^GRP1_A ^GRP1_B ^GRP1_C ^GRP1_N TYPE SMAI1:25 BLOCK SPFCOUT DFTSPFC AI3P ^GRP1_A ^GRP1_B ^GRP1_C ^GRP1_N TYPE ANSI07000198.vsd ANSI07000199 V1 EN Figure 24: Configuration for using an instance in task time group 2 as DFT reference.
Page 100: Setting Parameters
Section 3 1MRK504116-UUS C IED application 3.4.12.4 Setting parameters Table 22: SMAI1 Non group settings (basic) Name Values (Range) Unit Step Default Description DFTRefExtOut InternalDFTRef InternalDFTRef DFT reference for external output AdDFTRefCh1 AdDFTRefCh2 AdDFTRefCh3 AdDFTRefCh4 AdDFTRefCh5 AdDFTRefCh6 AdDFTRefCh7 AdDFTRefCh8 AdDFTRefCh9 AdDFTRefCh10 AdDFTRefCh11 AdDFTRefCh12...
Page 101: Summation Block 3 Phase 3Phsum
Section 3 1MRK504116-UUS C IED application Table 24: SMAI2 Non group settings (basic) Name Values (Range) Unit Step Default Description DFTReference InternalDFTRef InternalDFTRef DFT reference AdDFTRefCh1 AdDFTRefCh2 AdDFTRefCh3 AdDFTRefCh4 AdDFTRefCh5 AdDFTRefCh6 AdDFTRefCh7 AdDFTRefCh8 AdDFTRefCh9 AdDFTRefCh10 AdDFTRefCh11 AdDFTRefCh12 External DFT ref ConnectionType Ph-N Ph-N...
Page 102: Setting Parameters
Section 3 1MRK504116-UUS C IED application DFTReference: The reference DFT block (InternalDFT Ref,DFTRefGrp1 or External DFT ref) . FreqMeasMinVal: The minimum value of the voltage for which the frequency is calculated, expressed as percent of VBasebase voltage setting (for each instance x). VBase: Base voltage setting.
Page 103: Setting Parameters
Section 3 1MRK504116-UUS C IED application 3.4.14.2 Setting parameters The function does not have any parameters available in the local HMI or PCM600. 3.4.15 Denial of service DOS 3.4.15.1 Application The denial of service functions (DOSFRNT, DOSOEMAB and DOSOEMCD) are designed to limit the CPU load that can be produced by Ethernet network traffic on the IED.
Page 104: Application
Section 3 1MRK504116-UUS C IED application Function description IEC 61850 IEC 60617 ANSI/IEEE C37.2 identification identification device number Transformer differential protection, two- T2WPDIF winding 3Id/I SYMBOL-BB V1 EN Transformer differential protection, T3WPDIF three-winding 3Id/I SYMBOL-BB V1 EN 3.5.1.1 Application The transformer differential protection is a unit protection. It serves as the main protection of transformers in case of winding failure.
Page 105: Setting Guidelines
Section 3 1MRK504116-UUS C IED application implemented in the IED compensates for both the turns-ratio and the phase shift internally in the software. No auxiliary current transformers are necessary. The differential current should theoretically be zero during normal load or external faults if the turn-ratio and the phase shift are correctly compensated.
Page 106 Section 3 1MRK504116-UUS C IED application transformers have difficult operating conditions. This bias quantity gives the best stability against an unwanted operation during external faults. The usual practice for transformer protection is to set the bias characteristic to a value of at least twice the value of the expected spill current under through faults conditions.
Page 107 Section 3 1MRK504116-UUS C IED application The unrestrained operation level has a default value of IdUnre = 10pu, which is typically acceptable for most of the standard power transformer applications. In the following case, this setting need to be changed accordingly: •...
Page 108 Section 3 1MRK504116-UUS C IED application operate current [ times IBase ] Operate unconditionally UnrestrainedLimit Operate conditionally Section 1 Section 2 Section 3 SlopeSection3 IdMin SlopeSection2 Restrain EndSection1 restrain current [ times IBase ] EndSection2 en05000187-2.vsd IEC05000187 V2 EN Figure 25: Representation of the restrained-, and the unrestrained operate characteristics Ioperate...
Page 109 Section 3 1MRK504116-UUS C IED application Elimination of zero sequence currents A differential protection may operate unwanted due to external ground-faults in cases where the zero sequence current can flow on only one side of the power transformer. but not on the other side. This is the case when zero sequence current cannot be properly transformed to the other side of the power transformer.
Page 110 Section 3 1MRK504116-UUS C IED application up transformers in power stations) should be provided with an overexcitation protection based on V/Hz to achieve a trip before the core thermal limit is reached. Cross-blocking between phases Basic definition of the cross-blocking is that one of the three phases can block operation (that is, tripping) of the other two phases due to the harmonic pollution of the differential current in that phase (waveform, 2nd or 5th harmonic content).
Page 111 Section 3 1MRK504116-UUS C IED application The setting NegSeqROA represents the so-called Relay Operate Angle, which determines the boundary between the internal and external fault regions. It can be selected in the range from 30 degrees to 90 degrees, with a step of 1 degree. The default value is 60 degrees.
Page 112 Section 3 1MRK504116-UUS C IED application The principle of the internal/external fault discriminator can be extended to autotransformers and transformers with three windings. If all three windings are connected to their respective networks then three directional comparisons are made, but only two comparisons are necessary in order to positively determine the position of the fault with respect to the protected zone.
Page 113 Section 3 1MRK504116-UUS C IED application Differential current alarm Differential protection continuously monitors the level of the fundamental frequency differential currents and gives an alarm if the pre-set value is simultaneously exceeded in all three phases. This feature can be used to monitor the integrity of on-load tap- changer compensation within the differential function.
Page 114: Setting Example
Section 3 1MRK504116-UUS C IED application enabled it is not possible to test the 2 harmonic blocking feature by simply injecting one current with superimposed second harmonic. In that case the switch on to fault feature will operate and the differential protection will trip. However for a real inrush case the differential protection function will properly restrain from operation.
Page 115 Section 3 1MRK504116-UUS C IED application noted that irrespective of the main CT connections (wye or delta) on-line reading and automatic compensation for actual load tap changer position can be used in the IED. Typical main CT connections for transformer differential protection Three most typical main CT connections used for transformer differential protection are shown in figure 26.
Page 116 Section 3 1MRK504116-UUS C IED application • are increased √3 times (1.732 times) in comparison with wye connected CTs • lag by 30° the primary winding currents (this CT connection rotates currents by 30° in clockwise direction) • do not contain zero sequence current component For DAC delta connected main CTs, ratio shall be set for √3 times smaller than the actual ratio of individual phase CTs.
Page 117 Section 3 1MRK504116-UUS C IED application CT 300/5 CT 300/5 in Delta (DAC) 20.9 MVA 20.9 MVA 69/12.5 kV 69/12.5 kV YNd1 YNd1 CT 800/5 CT 800/5 en06000554_ansi.vsd ANSI06000554 V1 EN Figure 27: Two differential protection solutions for wye-delta connected power transformer For this particular power transformer the 69 kV side phase-to-ground no-load voltages lead by 30 degrees the 12.5 kV side phase-to- ground no-load voltages.
Page 118 Section 3 1MRK504116-UUS C IED application 4. Enter the following settings for all three CT input channels used for the LV side CTs see table 28. Table 28: CT input channels used for the LV side CTs Setting parameter Selected value for both solutions CTprim CTsec CT_WyePoint...
Page 119 Section 3 1MRK504116-UUS C IED application Setting parameter Select value for both solution 1 Selected value for both solution 2 (wye connected CT) (delta connected CT) TconfigForW1 TconfigForW2 LocationOLTC1 Not used Not used Other Parameters Not relevant for this application. Not relevant for this application.
Page 120 Section 3 1MRK504116-UUS C IED application delta, as shown in the right-hand side in figure 28, it must be ensured that the 24.9 kV currents are rotated by 30° in anti-clockwise direction. Thus, the DAB CT delta connection (see figure 28) must be used for 24.9 kV CTs in order to put 115 kV & 24.9 kV currents in phase.
Page 121 Section 3 1MRK504116-UUS C IED application Table 32: General settings of the differential protection Setting parameter selected value for both Solution 1 Selected value for both Solution 2 (wye conected CT) (delta connected CT) RatedVoltageW1 115 kV 115 kV Rated VoltageW2 24.9 kV 24.9 kV RatedCurrentW1...
Page 122 Section 3 1MRK504116-UUS C IED application CT 200/1 CT 200/1 in Delta (DAB) 31.5/31.5/(10.5) MVA 31.5/31.5/(10.5) MVA 110±11×1.5% /36.75/(10.5) kV 110±11×1.5% /36.75/(10.5) kV YNyn0(d5) YNyn0(d5) CT 500/5 CT 500/5 in Delta (DAB) en06000558_ansi.vsd ANSI06000558 V1 EN Figure 29: Two differential protection solutions for wye-wye connected transformer. For this particular power transformer the 110 kV side phase-to-ground no-load voltages are exactly in phase with the 36.75 kV side phase-to-ground no-load voltages.
Page 123 Section 3 1MRK504116-UUS C IED application Table 33: CT input channels used for the HV side CTs Setting parameter Selected value for both solution 1 Selected value for both Solution 2 (wye connected CTs) (delta connected CTs) CTprim (Equation 32) EQUATION1891 V1 EN CTsec CT_WyePoint...
Page 124 Section 3 1MRK504116-UUS C IED application Setting parameter Selected value for both Solution 1 Selected value for both Solution 2 (wye connected) (delta connected) ZSCurrSubtrW1 ZSCurrSubtrW2 TconfigForW1 TconfigForW2 LocationOLT1 Winding 1 (W1) Winding 1 (W1) LowTapPosOLTC1 RatedTapOLTC1 HighTapPsOLTC1 TapHighVoltTC1 StepSizeOLTC1 1.5% 1.5% Other parameters...
Page 125 Section 3 1MRK504116-UUS C IED application IEC vector group ANSI designation Positive sequence no-load Required delta CT connection voltage phasor diagram type on wye side of the protected power transformer and internal vector group setting in the IED YNd1 DAC/Yy0 IEC06000559 V1 EN Dyn1 DAB/Yy0...
Page 126: Setting Parameters
Section 3 1MRK504116-UUS C IED application IEC vector group ANSI designation Positive sequence no-load Required delta CT connection voltage phasor diagram type on wye side of the protected power transformer and internal vector group setting in the IED Dyn11 DAC/Yy0 IEC06000562 V1 EN YNd5 YD150...
Page 127 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description IdUnre 1.00 - 50.00 0.01 10.00 Unrestrained protection limit, multiple of Winding 1 rated current CrossBlockEn Disabled Enabled Operation Off/On for cross-block logic Enabled between phases NegSeqDiffEn Disabled Enabled Operation Off/On for neg.
Page 128 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description ConnectTypeW1 WYE (Y) WYE (Y) Connection type of winding 1: Y-wye or D-delta Delta (D) ConnectTypeW2 WYE (Y) WYE (Y) Connection type of winding 2: Y-wye or D-delta Delta (D) ClockNumberW2 0 [0 deg]...
Page 129 Section 3 1MRK504116-UUS C IED application Table 39: T3WPDIF (87T) Group settings (basic) Name Values (Range) Unit Step Default Description Operation Disabled Disabled Operation Disable / Enable Enabled SOTFMode Disabled Enabled Operation mode for switch onto fault feature Enabled tAlarmDelay 0.000 - 60.000 0.001 10.000...
Page 130 Section 3 1MRK504116-UUS C IED application Table 41: T3WPDIF (87T) Non group settings (basic) Name Values (Range) Unit Step Default Description RatedVoltageW1 0.05 - 2000.00 0.05 400.00 Rated voltage of transformer winding 1 (HV winding) in kV RatedVoltageW2 0.05 - 2000.00 0.05 231.00 Rated voltage of transformer winding 2 in kV...
Page 131: Restricted Earth-Fault Protection, Low Impedance Refpdif (87N)
Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description CT2RatingW1 1 - 99999 3000 CT primary in A, T-branch 2, on transf. W1 side TconfigForW2 Two CT inputs (T-config.) for winding 2, YES / CT1RatingW2 1 - 99999 3000 CT primary rating in A, T-branch 1, on transf.
Page 132: Application
Section 3 1MRK504116-UUS C IED application Function description IEC 61850 IEC 60617 ANSI/IEEE C37.2 identification identification device number Restricted earth-fault protection, low REFPDIF impedance IdN/I SYMBOL-AA V1 EN 3.5.2.1 Application Breakdown of the insulation between a phase conductor and ground in an effectively or low impedance grounded power system results in a large fault current.
Page 133 Section 3 1MRK504116-UUS C IED application Due to its features, REFPDIF (87N) is often used as a main protection of the transformer winding for all faults involving ground. Transformer winding, solidly grounded The most common application is on a solidly grounded transformer winding. The connection is shown in figure 30.
Page 134 Section 3 1MRK504116-UUS C IED application ANSI05000211_3_en.vsd ANSI05000211 V3 EN Figure 31: Connection of the low impedance Restricted earth-fault function REFPDIF for a zig-zag grounding transformer Autotransformer winding, solidly grounded Autotransformers can be protected with the low impedance restricted ground fault protection function REFPDIF.
Page 135 Section 3 1MRK504116-UUS C IED application ANSI05000212_3_en.vsd ANSI05000212 V3 EN Figure 32: Connection of restricted ground fault, low impedance function REFPDIF (87N) for an autotransformer, solidly grounded Reactor winding, solidly grounded Reactors can be protected with restricted ground fault protection, low impedance function REFPDIF (87N).
Page 136 Section 3 1MRK504116-UUS C IED application ANSI05000213_3_en.vsd ANSI05000213 V3 EN Figure 33: Connection of restricted earth-fault, low impedance function REFPDIF (87N) for a solidly grounded reactor Multi-breaker applications Multi-breaker arrangements including ring, one breaker-and-a-half, double breaker and mesh corner arrangements have two sets of current transformers on the phase side. The restricted earth-fault protection, low impedance function REFPDIF (87N) has inputs to allow two current inputs from each side of the transformer.
Page 137: Setting Guidelines
Section 3 1MRK504116-UUS C IED application REFx I3PW1CT1 I3PW1CT2 INd> en05000214_ansi.vsd ANSI05000214 V1 EN Figure 34: Connection of Restricted earth fault, low impedance function REFPDIF (87N) in multi-breaker arrangements CT grounding direction To make the restricted earth-fault protection REFPDIF (87N)operate correctly, the main CTs are always supposed to be wye connected.
Page 138 Section 3 1MRK504116-UUS C IED application I3PW1CT2: Phase currents for winding1 second current transformer set for multi- breaker arrangements. When not required configure input to "GRP-OFF". I3PW2CT1: Phase currents for winding 2 first current transformer set. Used for autotransformers. I3PW2CT2: Phase currents for winding 2 second current transformer set for multi- breaker arrangements.
Page 139: Setting Parameters
Section 3 1MRK504116-UUS C IED application IdMin: The setting gives the minimum operation value. The setting is in percent of the IBase value. The neutral current must always be larger than half of this value. A normal setting is 30% of power transformer-winding rated current for the solidly grounded winding.
Page 140: 1Ph High Impedance Differential Protection Hzpdif (87)
Section 3 1MRK504116-UUS C IED application 3.5.3 1Ph High impedance differential protection HZPDIF (87) 3.5.3.1 Identification IEC 61850 IEC 60617 ANSI/IEEE C37.2 Function description identification identification device number 1Ph High impedance differential HZPDIF protection SYMBOL-CC V2 EN 3.5.3.2 Application The 1Ph High impedance differential protection function HZPDIF (87) can be used as: •...
Page 141 Section 3 1MRK504116-UUS C IED application 3·87 3·87 ANSI05000738-2-en.vsd ANSI05000738 V2 EN Figure 35: Different applications of a 1Ph High impedance differential protection HZPDIF (87) function The basics of the high impedance principle The high impedance differential protection principle has been used for many years and is well documented.
Page 142 Section 3 1MRK504116-UUS C IED application en05000164_ansi.vsd ANSI05000164 V1 EN Figure 36: Example for the high impedance restricted earth fault protection application For a through fault one current transformer might saturate when the other CTs still will feed current. For such a case a voltage will be developed across the stabilising resistor. The calculations are made with the worst situations in mind and a minimum operating voltage V is calculated according to equation...
Page 143 Section 3 1MRK504116-UUS C IED application The minimum operating voltage has to be calculated (all loops) and the IED function is set higher than the highest achieved value (setting TripPickup). As the loop resistance is the value to the connection point from each CT, it is advisable to do all the CT core summations in the switchgear to have shortest possible loops.
Page 144 Section 3 1MRK504116-UUS C IED application Table 44: 1 A channels: input with minimum operating down to 20 mA Operating Stabilizing Operating Stabilizing Operating Stabilizing Operating TripPi voltage resistor R current level resistor R current level resistor R current level ckup ohms ohms...
Page 145 Section 3 1MRK504116-UUS C IED application IED pickup current Ires is the current through the voltage limiter and ΣImag is the sum of the magnetizing currents from all CTs in the circuit (for example, 4 for restricted earth fault protection, 2 for reactor differential protection, 3-5 for autotransformer differential protection).
Page 146 Section 3 1MRK504116-UUS C IED application Rres I> Protected Object a) Through load situation b) Through fault situation c) Internal faults ANSI05000427-2-en.vsd ANSI05000427 V2 EN Figure 37: The high impedance principle for one phase with two current transformer inputs Application manual...
Page 147: Connection Examples For High Impedance Differential Protection
Section 3 1MRK504116-UUS C IED application 3.5.3.3 Connection examples for high impedance differential protection WARNING! USE EXTREME CAUTION! Dangerously high voltages might be present on this equipment, especially on the plate with resistors. Do any maintenance ONLY if the primary object protected with this equipment is de-energized.
Page 148 Section 3 1MRK504116-UUS C IED application Description Scheme grounding point Note that it is of outmost importance to insure that only one grounding point exist in such scheme. Three-phase plate with setting resistors and metrosils. Necessary connection for three-phase metrosil set. Shown connections are applicable for both types of three-phase plate.
Page 149 Section 3 1MRK504116-UUS C IED application AI01 (I) CT 1500/5 Star/Wye AI02 (I) SMAI2 Connected BLOCK AI3P ^GRP2_A AI03 (I) ^GRP2_B ^GRP2_C AI04 (I) ^GRP2_N TYPE AI05 (I) Protected Object AI06 (I) 1-Ph Plate with Metrosil and Resistor ANSI09000170_2_en.vsd ANSI09000170 V2 EN Figure 39: CT connections for restricted earth fault protection Description...
Page 150: Setting Guidelines
Section 3 1MRK504116-UUS C IED application Transformer input module where this current input is located. Note that the CT ratio for high impedance differential protection application must be set as one. • For main CTs with 1A secondary rating the following setting values shall be entered: CTprim 1A and CTsec = 1A CTprim...
Page 151 Section 3 1MRK504116-UUS C IED application R series: Set the value of the stabilizing series resistor. Calculate the value according to the examples for each application. Adjust the resistor as close as possible to the calculated example. Measure the value achieved and set this value here. The value shall always be high impedance.
Page 152 Section 3 1MRK504116-UUS C IED application It is strongly recommended to use the highest tap of the CT whenever high impedance protection is used. This helps in utilizing maximum CT capability, minimize the current, thereby reducing the stability voltage limit. Another factor is that during internal faults, the voltage developed across the selected tap is limited by the non-linear resistor but in the unused taps, owing to auto-transformer action, voltages may be much higher than design limits might be induced.
Page 153 Section 3 1MRK504116-UUS C IED application 2000 ° + × - ° × £ 200 0 3 50 60 approx .100 (Equation 38) EQUATION1887-ANSI V1 EN where 200mA is the current drawn by the IED circuit and 50mA is the current drawn by each CT just at pickup The magnetizing current is taken from the magnetizing curve for the current transformer cores which should be available.
Page 154 Section 3 1MRK504116-UUS C IED application 3·87 ANSI05000173-2-en.vsd ANSI05000173 V2 EN Figure 41: Application of the 1Ph High impedance differential protection HZPDIF (87) function on an autotransformer Setting example It is strongly recommended to use the highest tap of the CT whenever high impedance protection is used.
Page 155 Section 3 1MRK504116-UUS C IED application Calculation: 1150 > × × (0.3 0.1) 28.75 (Equation 39) EQUATION1760-ANSI V1 EN TripPickup =40 V Select a setting of The current transformer knee point voltage can roughly be calculated from the rated values, considering knee point voltage to be about 70% of the accuracy limit voltage.
Page 156 Section 3 1MRK504116-UUS C IED application 3·87 ANSI05000774-3-en.vsd ANSI05000774 V3 EN Figure 42: Application of the high impedance differential function on tertiary busbar Setting example It is strongly recommended to use the highest tap of the CT whenever high impedance protection is used. This helps in utilizing maximum CT capability, minimize the current, thereby reducing the stability voltage limit.
Page 157 Section 3 1MRK504116-UUS C IED application Basic data: Cable loop <100 ft AWG10 (one way between the junction point and the farthest resistance: CT) gives loop resistance 2 · 0.05 = 0.1 Ohms Note! Only one way as the system grounding is limiting the ground- fault current.
Page 158 Section 3 1MRK504116-UUS C IED application The magnetizing current is taken from the magnetizing curve for the current transformer cores which should be available. The value at TripPickup is taken. Tertiary reactor protection For many transformers there can be a secondary system for local distribution and/or shunt compensation.
Page 159 Section 3 1MRK504116-UUS C IED application 3·87 ANSI05000176-2-en.vsd ANSI05000176 V2 EN Figure 43: Application of the1Ph High impedance differential protection HZPDIF (87) function on an autotransformer Setting example It is strongly recommended to use the highest tap of the CT whenever high impedance protection is used.
Page 160 Section 3 1MRK504116-UUS C IED application unused taps, owing to auto-transformer action, voltages much higher than design limits might be induced. Basic data: Current transformer ratio: 100/5 A (Note: Must be the same at all locations) CT Class: C200 Secondary resistance: 0.1 Ohms (At 100/5 Tap) Cable loop resistance: <100 ft AWG10 (one way between the junction point and the farthest...
Page 161 Section 3 1MRK504116-UUS C IED application Where 200mA is the current drawn by the IED circuit and 50mA is the current drawn by each CT just at pickup. The magnetizing current is taken from the magnetizing curve of the current transformer cores, which should be available. The value at TripPickup is taken.
Page 162 Section 3 1MRK504116-UUS C IED application en05000177_ansi.vsd ANSI05000177 V1 EN Figure 44: Application of HZPDIF (87) function as a restricted earth fault IED for an YNd transformer Setting example It is strongly recommended to use the highest tap of the CT whenever high impedance protection is used.
Page 163 Section 3 1MRK504116-UUS C IED application Basic data: Transformer rated current on HV winding: 250 A Current transformer ratio: 600-300/5A A (Note: Must be the same at all locations) CT Class: C200 Cable loop resistance: <50 ft AWG10 (one way between the junction point and the farthest CT) to be limited to approx.
Page 164 Section 3 1MRK504116-UUS C IED application Alarm level operation The 1Ph High impedance differential protection HZPDIF (87) function has a separate alarm level, which can be used to give alarm for problems with an involved current transformer circuit. The setting level is normally selected to be around 10% of the operating voltage TripPickup.
Page 165: Setting Parameters
Section 3 1MRK504116-UUS C IED application 3.5.3.5 Setting parameters Table 46: HZPDIF (87) Group settings (basic) Name Values (Range) Unit Step Default Description Operation Disabled Disabled Disable/Enable Operation Enabled AlarmPickup 2 - 500 Alarm voltage level on CT secondary tAlarm 0.000 - 60.000 0.001 5.000...
Page 166 Section 3 1MRK504116-UUS C IED application stringent demands on the fault clearing equipment in order to maintain an unchanged or increased security level of the power system. The distance protection function in the IED is designed to meet basic requirements for application on transmission and sub-transmission lines (solid grounded systems) although it also can be used on distribution levels.
Page 167 Section 3 1MRK504116-UUS C IED application is the zero sequence impedance (Ω/phase) is the fault impedance (Ω), often resistive is the ground-return impedance defined as (Z The voltage on the healthy phases is generally lower than 140% of the nominal phase-to- ground voltage.
Page 168 Section 3 1MRK504116-UUS C IED application is setting of the reactive positive sequence reach The magnitude of the ground-fault current in effectively grounded networks is high enough for impedance measuring elements to detect ground faults. However, in the same way as for solidlygrounded networks, distance protection has limited possibilities to detect high resistance faults and should therefore always be complemented with other protection function(s) that can carry out the fault clearance in this case.
Page 169 Section 3 1MRK504116-UUS C IED application en05000216_ansi.vsd ANSI05000216 V1 EN Figure 47: High impedance grounded network The operation of high impedance grounded networks is different compared to solid grounded networks where all major faults have to be cleared very fast. In high impedance grounded networks, some system operators do not clear single phase-to- ground faults immediately;...
Page 170 Section 3 1MRK504116-UUS C IED application The infeed factor (I can be very high, 10-20 depending on the differences in source impedances at local and remote end. p*ZL (1-p)*ZL en05000217_ansi.vsd ANSI05000217 V1 EN Figure 48: Influence of fault current infeed from remote line end The effect of fault current infeed from remote line end is one of the most driving factors for justify complementary protection to distance protection.
Page 171 Section 3 1MRK504116-UUS C IED application The IED has a built in function which shapes the characteristic according to the right figure of figure 49. The load encroachment algorithm will increase the possibility to detect high fault resistances, especially for phase-to-ground faults at remote line end. For example, for a given setting of the load angle LdAngle for Phase selection with load encroachment, quadrilateral characteristic function (FDPSPDIS, 21), the resistive blinder for the zone measurement can be expanded according to the figure...
Page 172 Section 3 1MRK504116-UUS C IED application In short line applications, the major concern is to get sufficient fault resistance coverage. Load encroachment is not so common. The line length that can be recognized as a short line is not a fixed length; it depends on system parameters such as voltage and source impedance, see table 47.
Page 173 Section 3 1MRK504116-UUS C IED application The IED's ability to set resistive and reactive reach independent for positive and zero sequence fault loops and individual fault resistance settings for phase-to-phase and phase- to-ground fault together with load encroachment algorithm improves the possibility to detect high resistive faults at the same time as the security is improved (risk for unwanted trip due to load encroachment is eliminated), see figure 50.
Page 174 Section 3 1MRK504116-UUS C IED application From an application point of view there exists three types of network configurations (classes) that must be considered when making the settings for the protection function. The different network configuration classes are: Parallel line with common positive and zero sequence network Parallel circuits with common positive but isolated zero sequence network Parallel circuits with positive and zero sequence sources isolated.
Page 175 Section 3 1MRK504116-UUS C IED application Parallel line in service This type of application is very common and applies to all normal sub-transmission and transmission networks. Let us analyze what happens when a fault occurs on the parallel line see figure 51. From symmetrical components, we can derive the impedance Z at the relay point for normal lines without mutual coupling according to equation 59.
Page 176 Section 3 1MRK504116-UUS C IED application IEC09000253_1_en.vsd IEC09000253 V1 EN Figure 52: Equivalent zero sequence impedance circuit of the double-circuit, parallel, operating line with a single phase-to-ground fault at the remote busbar When mutual coupling is introduced, the voltage at the relay point A will be changed according to equation 60.
Page 177 Section 3 1MRK504116-UUS C IED application = × × × p Z1 I K 3I (Equation 62) EQUATION1278 V3 EN One can also notice that the following relationship exists between the zero sequence currents: × × I p Z (Equation 63) EQUATION1279 V2 EN Simplification of equation 63, solving it for 3I0p and substitution of the result into equation...
Page 178 Section 3 1MRK504116-UUS C IED application OPEN OPEN CLOSED CLOSED en05000222_ansi.vsd ANSI05000222 V1 EN Figure 53: The parallel line is out of service and grounded When the parallel line is out of service and grounded at both line ends on the bus bar side of the line CTs so that zero sequence current can flow on the parallel line, the equivalent zero sequence circuit of the parallel lines will be according to figure 54.
Page 179 Section 3 1MRK504116-UUS C IED application æ ö · ç ÷ è ø (Equation 67) DOCUMENT11520-IMG3502 V1 EN æ ö · ç ÷ è ø (Equation 68) DOCUMENT11520-IMG3503 V1 EN Parallel line out of service and not grounded OPEN OPEN CLOSED CLOSED en05000223_ansi.vsd...
Page 180 Section 3 1MRK504116-UUS C IED application IEC09000255_1_en.vsd IEC09000255 V1 EN Figure 56: Equivalent zero-sequence impedance circuit for a double-circuit line with one circuit disconnected and not grounded The reduction of the reach is equal to equation 69. × × × ×...
Page 181 Section 3 1MRK504116-UUS C IED application Ensure that the underreaching zones from both line ends will overlap a sufficient amount (at least 10%) in the middle of the protected circuit. Tapped line application en05000224_ansi.vsd ANSI05000224 V1 EN Figure 57: Example of tapped line with Auto transformer This application gives rise to similar problem that was highlighted in section "Fault infeed from remote end"...
Page 182 Section 3 1MRK504116-UUS C IED application Where: and Z is the line impedance from the A respective C station to the T point. and I is fault current from A respective C station for fault between T and B. V2/V1 Transformation ratio for transformation of impedance at V1 side of the transformer to the measuring side V2 (it is assumed that current and voltage distance function is taken from V2 side of the transformer).
Page 183: Setting Guidelines
Section 3 1MRK504116-UUS C IED application × 28707 L Rarc (Equation 76) EQUATION1456 V1 EN where: represents the length of the arc (in meters). This equation applies for the distance protection zone 1. Consider approximately three times arc foot spacing for the zone 2 and wind speed of approximately 30 m/h is the actual fault current in A.
Page 184 Section 3 1MRK504116-UUS C IED application In case of parallel lines, consider the influence of the mutual coupling according to section "Parallel line application with mutual coupling" and select the case(s) that are valid in the particular application. By proper setting it is possible to compensate for the cases when the parallel line is in operation, out of service and not grounded and out of service and grounded in both ends.
Page 185 Section 3 1MRK504116-UUS C IED application Z AC Z CB Z CF I A+ IB ANSI05000457-2-en.vsd ANSI05000457 V2 EN Figure 58: Setting of overreaching zone Setting of reverse zone The reverse zone is applicable for purposes of scheme communication logic, current reversal logic, weak-end infeed logic, and so on.
Page 186 Section 3 1MRK504116-UUS C IED application Parallel line in service – setting of zone 2 Overreaching zones (in general, zones 2 and 3) must overreach the protected circuit in all cases. The greatest reduction of a reach occurs in cases when both parallel circuits are in service with a single phase-to-ground fault located at the end of a protected line.
Page 187 Section 3 1MRK504116-UUS C IED application Set the values of the corresponding zone (zero-sequence resistance and reactance) equal to: æ ö × ç ------------------------- - ÷ è ø (Equation 84) EQUATION561 V1 EN æ ö × ------------------------- - ç – ÷...
Page 188 Section 3 1MRK504116-UUS C IED application £ × RFPP 3 X1 (Equation 89) IECEQUATION2306 V1 EN Load impedance limitation, without load encroachment function The following instructions are valid when Phase selection with load encroachment, quadrilateral characteristic function FDPSPDIS (21) is not activated. To deactivate the function, the setting of the load resistance RLdFwd and RldRev in FDPSPDIS (21) must be set to max value (3000).
Page 189 Section 3 1MRK504116-UUS C IED application £ × RFPE 0.8 Z load (Equation 92) EQUATION792 V1 EN This equation is applicable only when the loop characteristic angle for the single phase- to-ground faults is more than three times as large as the maximum expected load- impedance angle.
Page 190 Section 3 1MRK504116-UUS C IED application Load impedance limitation, with Phase selection with load encroachment, quadrilateral characteristic function activated The parameters for shaping of the load encroachment characteristic are found in the description of Phase selection with load encroachment, quadrilateral characteristic function (FDPSPDIS, 21).
Page 191 Section 3 1MRK504116-UUS C IED application × × < < ArgDir L L M ArgNeg (Equation 97) EQUATION1553 V2 EN where: AngDir is the setting for the lower boundary of the forward directional characteristic, by default set to 15 (= -15 degrees) and AngNegRes is the setting for the upper boundary of the forward directional characteristic, by default set to 115 degrees, see figure 59.
Page 192 Section 3 1MRK504116-UUS C IED application AngNegRes AngDir en05000722_ansi.vsd ANSI05000722 V1 EN Figure 59: Setting angles for discrimination of forward and reverse fault in Directional impedance quadrilateral function ZDRDIR (21D) The reverse directional characteristic is equal to the forward characteristic rotated by 180 degrees.
Page 193: Setting Parameters
Section 3 1MRK504116-UUS C IED application Setting of timers for distance protection zones The required time delays for different distance protection zones are independent of each other . Distance protection zone 1 can also have a time delay, if so required for selectivity reasons.
Page 194 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description 0.000 - 60.000 0.001 0.000 Time delay of trip, Ph-G IMinPUPP 10 - 1000 Minimum pickup delta current (2 x current of lagging phase) for Phase-to-phase loops IMinPUPG 10 - 1000 Minimum pickup phase current for Phase-to-...
Page 195: Distance Measuring Zone, Quadrilateral Characteristic For Series Compensated Lines Zmcpdis (21), Zmcapdis (21), Zdsrdir (21D)
Section 3 1MRK504116-UUS C IED application Table 51: ZDRDIR (21D) Group settings (basic) Name Values (Range) Unit Step Default Description IBase 1 - 99999 3000 Base setting for current level VBase 0.05 - 2000.00 0.05 400.00 Base setting for voltage level IMinPUPP 5 - 30 Minimum pickup delta current (2 x current of...
Page 196 Section 3 1MRK504116-UUS C IED application The distance protection function is designed to meet basic requirements for application on transmission and sub transmission lines (solid grounded systems) although it also can be used on distribution levels. System grounding The type of system grounding plays an important roll when designing the protection system.
Page 197 Section 3 1MRK504116-UUS C IED application The voltage on the healthy phases is generally lower than 140% of the nominal phase-to- ground voltage. This corresponds to about 80% of the nominal phase-to-phase voltage. The high zero sequence current in solid grounded networks makes it possible to use impedance measuring technique to detect ground-fault.
Page 198 Section 3 1MRK504116-UUS C IED application occurs on the protected line. The fault infeed may enlarge the fault impedance seen by the distance protection. This effect is very important to keep in mind when both planning the protection system and making the settings. With reference to figure 61, we can draw the equation for the bus voltage Va at left side as: ×...
Page 199 Section 3 1MRK504116-UUS C IED application impedance. This has the drawback that it will reduce the sensitivity of the protection that is, the ability to detect resistive faults. The IED has a built in function which shapes the characteristic according to the right figure 62.
Page 200 Section 3 1MRK504116-UUS C IED application Table 52: Definition of long lines Line category 110 kV 500 kV Long lines 45-60 miles 200-250 miles Very long lines >60 miles >250 miles The possibility in IED to set resistive and reactive reach independent for positive and zero sequence fault loops and individual fault resistance settings for phase-to-phase and phase-to-ground fault together with load encroachment algorithm improves the possibility to detect high resistive faults at the same time as the security is improved...
Page 201 Section 3 1MRK504116-UUS C IED application Parallel lines introduce an error in the measurement due to the mutual coupling between the parallel lines. The lines need not be of the same voltage to experience mutual coupling, and some coupling exists even for lines that are separated by 100 meters or more.
Page 202 Section 3 1MRK504116-UUS C IED application Parallel line applications This type of networks are defined as those networks where the parallel transmission lines terminate at common nodes at both ends. We consider the three most common operation modes: • parallel line in service •...
Page 203 Section 3 1MRK504116-UUS C IED application FAULT en05000221_ansi.vsd ANSI05000221 V1 EN Figure 64: Class 1, parallel line in service The equivalent circuit of the lines can be simplified, as shown in figure 65. Z0 m 99000038.vsd IEC99000038 V1 EN Figure 65: Equivalent zero sequence impedance circuit of the double-circuit, parallel, operating line with a single phase-to-ground-fault at the remote busbar...
Page 204 Section 3 1MRK504116-UUS C IED application Where: = Z0m/(3 · Z1L) The second part in the parentheses is the error introduced to the measurement of the line impedance. If the current on the parallel line has negative sign compared to the current on the protected line that is, the current on the parallel line has an opposite direction compared to the current on the protected line, the distance function overreaches.
Page 205 Section 3 1MRK504116-UUS C IED application Calculation for a 400 kV line, where we for simplicity have excluded the resistance, gives with X1L=0.48 Ohm/Mile, X0L=1.4Ohms/Mile, zone 1 reach is set to 90% of the line reactance p=71% that is, the protection is underreaching with approximately 20%. The zero-sequence mutual coupling can reduce the reach of distance protection on the protected circuit when the parallel line is in normal operation.
Page 206 Section 3 1MRK504116-UUS C IED application (Equation 111) EQUATION2002 V4 EN The influence on the distance measurement can be a considerable overreach, which must be considered when calculating the settings. It is recommended to use a separate setting group for this operation condition, since it reduces the reach considerably when the line is in operation.
Page 207 Section 3 1MRK504116-UUS C IED application practice, the equivalent zero sequence impedance circuit for faults at the remote bus bar can be simplified to the circuit shown in figure 68. The line zero-sequence mutual impedance does not influence the measurement of the distance protection in a faulty circuit.
Page 208 Section 3 1MRK504116-UUS C IED application × é ù é ù ë û ë û (Equation 117) EQUATION1287 V2 EN The imaginary component of the same factor is equal to equation 118. × é ù é ù ë û ë û...
Page 209 Section 3 1MRK504116-UUS C IED application This application gives rise to similar problem that was highlighted in section "Fault infeed from remote end" that is, increased measured impedance due to fault current infeed. For example, for faults between the T point and B station the measured impedance at A and C is as follows: ·Z (Equation 119)
Page 210 Section 3 1MRK504116-UUS C IED application Fault resistance The performance of distance protection for single phase-to-ground faults is very important, because normally more than 70% of the faults on transmission lines are single phase-to-ground faults. At these faults, the fault resistance is composed of three parts: arc resistance, resistance of a tower construction, and tower-footing resistance.
Page 211 Section 3 1MRK504116-UUS C IED application Steady state voltage regulation and increase of voltage collapse limit A series capacitor is capable of compensating the voltage drop of the series inductance in a transmission line, as shown in figure 71. During low loading, the system voltage drop is lower and at the same time, the voltage drop on the series capacitor is lower.
Page 212 Section 3 1MRK504116-UUS C IED application limit 1000 1200 1400 1600 1800 P[MW] en06000586_ansi.vsd ANSI06000586 V1 EN Figure 72: Voltage profile for a simple radial power line with 0, 30, 50 and 70% of compensation Increased power transfer capability by raising the first swing stability limit Consider the simple one-machine and infinite bus system shown in figure 73.
Page 213 Section 3 1MRK504116-UUS C IED application without SC with SC Mech Mech en06000588.vsd IEC06000588 V1 EN Figure 74: Equal area criterion and first swing stability without and with series compensation This means that the system is stable if A ≤ (A ).
Page 214 Section 3 1MRK504116-UUS C IED application (Mvar) (S.C.) Capacitive Power flow (MW) 1000 1500 (T.L. + S.C.) Inductive Transmission 500 kV (T.L.) 500 km Line Series 1000 Compensation k = 50 % en06000589.vsd IEC06000589 V1 EN Figure 75: Self-regulating effect of reactive power balance Increase in power transfer The increase in power transfer capability as a function of the degree of compensation for a transmission line can be explained by studying the circuit shown in figure 76.
Page 215 Section 3 1MRK504116-UUS C IED application The effect on the power transfer when considering a constant angle difference (δ) between the line ends is illustrated in figure 77. Practical compensation degree runs from 20 to 70 percent. Transmission capability increases of more than two times can be obtained in practice.
Page 216 Section 3 1MRK504116-UUS C IED application (Equation 125) EQUATION1899 V1 EN Reduced costs of power transmission due to decreased investment costs for new power line As shown in figure the line loading can easily be increased 1.5-2 times by series compensation.
Page 217 Section 3 1MRK504116-UUS C IED application en06000595.vsd IEC06000595 V1 EN Figure 80: Thyristor switched series capacitor en06000596_ansi.vsd ANSI06000596 V1 EN Figure 81: Thyristor controlled series capacitor Line current Current through the thyristor Voltage over the series capacitor Rated reactance of the series capacitor A thyristor controlled series capacitor (TCSC) allows continuous control of the series capacitor reactance.
Page 218 Section 3 1MRK504116-UUS C IED application 0.02 0.02 0.04 0.04 0.06 0.06 0.08 0.08 0.12 0.12 0.14 0.14 0.16 0.16 0.18 0.18 0.02 0.02 0.04 0.04 0.06 0.06 0.08 0.08 0.12 0.12 0.14 0.14 0.16 0.16 0.18 0.18 0.02 0.02 0.04 0.04 0.06...
Page 219 Section 3 1MRK504116-UUS C IED application Imperatriz TCSC, Operating range Continuous 30 min Continuous 30 min. overload 10s overload -0.2 Bypass mode -0.4 Series5 1200 1500 1800 2100 2400 2700 3000 Line current (Arms) en06000598.vsd IEC06000598 V1 EN Figure 83: Operating range of a TCSC installed for damping of power oscillations (example) During continuous valve bypass the TCSC represents an inductive impedance of about...
Page 220 Section 3 1MRK504116-UUS C IED application Voltage and current inversion Series capacitors influence the magnitude and the direction of fault currents in series compensated networks. They consequently influence phase angles of voltages measured in different points of series compensated networks and this performances of different protection functions, which have their operation based on properties of measured voltage and current phasors.
Page 221 Section 3 1MRK504116-UUS C IED application With bypassed With inserted capacitor capacitor Source voltage Pre -fault voltage V’ Fault voltage Source en06000605_ansi.vsd ANSI06000605 V1 EN Figure 84: Voltage inversion on series compensated line With bypassed With inserted capacitor capacitor en06000606_ansi.vsd ANSI06000606 V1 EN Figure 85: Phasor diagrams of currents and voltages for the bypassed and...
Page 222 Section 3 1MRK504116-UUS C IED application The IED point voltage inverses its direction due to presence of series capacitor and its dimension. It is a common practice to call this phenomenon voltage inversion. Its consequences on operation of different protections in series compensated networks depend on their operating principle.
Page 223 Section 3 1MRK504116-UUS C IED application The first case corresponds also to conditions on non compensated lines and in cases, when the capacitor is bypassed either by spark gap or by the bypass switch, as shown in phasor diagram in figure 87. The resultant reactance is in this case of inductive nature and the fault currents lags source voltage by 90 electrical degrees.
Page 224 Section 3 1MRK504116-UUS C IED application based on residual (zero sequence) and negative sequence currents should be considered in studies as well. Current inversion in zero sequence systems with low zero sequence source impedance (a number of power transformers connected in parallel) must be considered as practical possibility in many modern networks.
Page 225 Section 3 1MRK504116-UUS C IED application é ù - × × × + - × × ê ú ë û × æ ö × ç ÷ è ø (Equation 132) EQUATION1906 V1 EN The line fault current consists of two components: •...
Page 226 Section 3 1MRK504116-UUS C IED application × × + - × × × × × - × æ ö × ç ÷ × è ø × é × × ù × × × ê ú ê ú ê ú × ×...
Page 227 Section 3 1MRK504116-UUS C IED application 0.02 0.04 0.06 0.08 0.12 0.14 0.16 0.18 t[ms ] en06000610.vsd IEC06000610 V1 EN Figure 89: Short circuit currents for the fault at the end of 500 km long 500 kV line without and with SC Location of instrument transformers Location of instrument transformers relative to the line end series capacitors plays an important role regarding the dependability and security of a complete protection...
Page 228 Section 3 1MRK504116-UUS C IED application CT1 and VT1 on figure represent the case with bus side instrument transformers. The protection devices are in this case exposed to possible voltage and current inversion for line faults, which decreases the required dependability. In addition to this may series capacitor cause negative apparent impedance to distance IEDs on protected and adjacent lines as well for close-in line faults (see also figure LOC=0%), which...
Page 229 Section 3 1MRK504116-UUS C IED application Distance IED near the feeding bus will see in different cases fault on remote end bus depending on type of overvoltage protection used on capacitor bank (spark gap or MOV) and SC location on protected power line. 100 % 50 % 33 %...
Page 230 Section 3 1MRK504116-UUS C IED application MOV protected series capacitor Line current as a function of time Capacitor voltage as a function of time Capacitor current as a function of time MOV current as a function of time en06000614_ansi.vsd ANSI06000614 V1 EN Figure 93: MOV protected capacitor with examples of capacitor voltage and corresponding currents...
Page 231 Section 3 1MRK504116-UUS C IED application Extensive studies at Bonneville Power Administration in USA ( ref. Goldsworthy, D,L “A Linearized Model for MOV-Protected series capacitors” Paper 86SM357–8 IEEE/ PES summer meeting in Mexico City July 1986) have resulted in construction of a non- linear equivalent circuit with series connected capacitor and resistor.
Page 232 Section 3 1MRK504116-UUS C IED application • Series capacitor becomes nearly completely bridged by MOV when the line current becomes higher than 10-times the protective current level (I £ 10· k · I Impact of series compensation on protective IED of adjacent lines Voltage inversion is not characteristic for the buses and IED points closest to the series compensated line only.
Page 233 Section 3 1MRK504116-UUS C IED application equation indicates the deepness of the network to which it will feel the influence of series compensation through the effect of voltage inversion. It is also obvious that the position of series capacitor on compensated line influences in great extent the deepness of voltage inversion in adjacent system.
Page 234 Section 3 1MRK504116-UUS C IED application may help eliminating the basic reason for wrong measurement. The most known of them are decrease of the reach due to presence of series capacitor, which apparently decreases the line reactance, and introduction of permanent memory voltage in directional measurement.
Page 235 Section 3 1MRK504116-UUS C IED application Equation is applicable for the case when the VTs are located on the bus side of series capacitor. It is possible to remove X from the equation in cases of VTs installed in line side, but it is still necessary to consider the safety factor K If the capacitor is out of service or bypassed, the reach with these settings can be less than 50% of protected line dependent on compensation degree and there will be a section, G in figure 96, of the power line where no tripping occurs from either end.
Page 236 Section 3 1MRK504116-UUS C IED application < < (Equation 141) EQUATION1898 V1 EN and in figure a three phase fault occurs beyond the capacitor. The resultant IED impedance seen from the D IED location to the fault may become negative (voltage inversion) until the spark gap has flashed.
Page 237 Section 3 1MRK504116-UUS C IED application en06000621_ansi.vsd ANSI06000621 V1 EN Figure 99: Distance IED on adjacent power lines are influenced by the negative impedance Normally the first zone of this protection must be delayed until the gap flashing has taken place. If the delay is not acceptable, some directional comparison must also be added to the protection of all adjacent power lines.
Page 238 Section 3 1MRK504116-UUS C IED application ordinary fault. However, a good protection system should be able to operate correctly before and after gap flashing occurs. en06000584_small.vsd en06000625.vsd IEC06000584-SMALL V1 EN IEC06000625 V1 EN Figure 101: Quadrilateral Figure 100: Cross-polarized characteristic with quadrilateral separate impedance characteristic...
Page 239 Section 3 1MRK504116-UUS C IED application in figure and a fault occurs behind the capacitor, the resultant reactance becomes negative and the fault current will have an opposite direction compared with fault current in a power line without a capacitor (current inversion). The negative direction of the fault current will persist until the spark gap has flashed.
Page 240 Section 3 1MRK504116-UUS C IED application Series compensation additionally exaggerates the effect of zero sequence mutual impedance between two circuits, see figure 103. It presents a zero sequence equivalent circuit for a fault at B bus of a double circuit line with one circuit disconnected and grounded at both IEDs.
Page 241: Setting Guidelines
Section 3 1MRK504116-UUS C IED application protection on healthy circuit and this way endangers even more the complete system stability. To avoid the unwanted tripping, some manufacturers provide a feature in their distance protection which detects that the fault current has changed in direction and temporarily blocks distance protection.
Page 242 Section 3 1MRK504116-UUS C IED application • The phase impedance of non transposed lines is not identical for all fault loops. The difference between the impedances for different phase-to-ground loops can be as large as 5-10% of the total line impedance. •...
Page 243 Section 3 1MRK504116-UUS C IED application æ ö × × ç ÷ è ø (Equation 150) EQUATION302 V3 EN Z AC Z CB Z CF I A+ IB ANSI05000457-2-en.vsd ANSI05000457 V2 EN Figure 105: Setting of reverse zone The reverse zone is applicable for purposes of scheme communication logic, current reversal logic, weak-end-infeed logic, and so on.
Page 244 Section 3 1MRK504116-UUS C IED application Directional control The directional function (ZDSRDIR) which is able to cope with the condition at voltage reversal, shall be used in all IEDs with conventional distance protection (ZMCPDIS,ZMCAPDIS, 21). This function is necessary in the protection on compensated lines as well as all non-compensated lines connected to this busbar (adjacent lines).
Page 245 Section 3 1MRK504116-UUS C IED application 100 % 99000202.vsd IEC99000202 V1 EN Figure 106: Reduced reach due to the expected sub-harmonic oscillations at different degrees of compensation æ ö c degree of compensation ç ÷ ç ÷ è ø (Equation 152) EQUATION1894 V1 EN is the reactance of the series capacitor p is the maximum allowable reach for an under-reaching zone with respect to the sub-...
Page 246 Section 3 1MRK504116-UUS C IED application Reactive Reach Compensated lines with the capacitor into the zone 1 reach : LLOC en07000063.vsd IEC07000063 V1 EN Figure 107: Simplified single line diagram of series capacitor located at X LLOC from A station Application manual...
Page 247 Section 3 1MRK504116-UUS C IED application en06000584.vsd IEC06000584 V1 EN Figure 108: Measured impedance at voltage inversion Forward direction: Where equals line reactance up to the series capacitor(in the picture LLoc approximate 33% of XLine) is set to (XLindex-XC) · p/100. is defined according to figure is safety factor for fast operation of Zone 1 Compensated line with the series...
Page 248 Section 3 1MRK504116-UUS C IED application When the calculation of XFw gives a negative value the zone 1 must be permanently blocked. For protection on non compensated lines facing series capacitor on next line. The setting is thus: • X1 is set to (XLine-XC · K) · p/100. •...
Page 249 Section 3 1MRK504116-UUS C IED application The increased reach related to the one used in non compensated system is recommended for all protections in the vicinity of series capacitors to compensate for delay in the operation caused by the sub harmonic swinging. Settings of the resistive reaches are limited according to the minimum load impedance.
Page 250 Section 3 1MRK504116-UUS C IED application Check the reduction of a reach for the overreaching zones due to the effect of the zero sequence mutual coupling. The reach is reduced for a factor: × (Equation 155) EQUATION1426 V1 EN If the denominator in equation is called B and Z0m is simplified to X0m, then the real and imaginary part of the reach reduction factor for the overreaching zones can be written as:...
Page 251 Section 3 1MRK504116-UUS C IED application The final reach in resistive direction for phase-to-ground fault loop measurement automatically follows the values of the line-positive and zero-sequence resistance, and at the end of the protected zone is equal to equation 160. ×...
Page 252 Section 3 1MRK504116-UUS C IED application The load impedance [Ω/phase] is a function of the minimum operation voltage and the maximum load current: loa d × ma x (Equation 165) EQUATION1719 V1 EN Minimum voltage Vmin and maximum current Imax are related to the same operating conditions.
Page 253 Section 3 1MRK504116-UUS C IED application £ × RFPP 1.6 Z load (Equation 168) EQUATION579 V2 EN Equation is applicable only when the loop characteristic angle for the phase-to- phase faults is more than three times as large as the maximum expected load- impedance angle.
Page 254: Setting Parameters
Section 3 1MRK504116-UUS C IED application Setting of timers for distance protection zones The required time delays for different distance-protection zones are independent of each other. Distance protection zone1 can also have a time delay, if so required for selectivity reasons. One can set the time delays for all zones (basic and optional) in a range of 0 to 60 seconds.
Page 255 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description R1PG 0.01 - 1000.00 ohm/p 0.01 5.00 Positive seq. resistance for characteristic angle, Ph-G X0PG 0.10 - 9000.00 ohm/p 0.01 100.00 Zero sequence reactance reach, Ph-G R0PG 0.01 - 3000.00 ohm/p 0.01...
Page 256 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description OperationPG Disabled Enabled Operation mode Disable/Enable of Phase- Enabled Ground loops X1FwPG 0.10 - 3000.00 ohm/p 0.01 30.00 Positive sequence reactance reach, Ph-G, forward R1PG 0.01 - 1000.00 ohm/p 0.01 5.00...
Page 257: Phase Selection, Quadrilateral Characteristic With Fixed Angle
Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description RLdFwd 1.00 - 3000.00 ohm/p 0.01 80.00 Forward resistive reach for the load impedance area RldRev 1.00 - 3000.00 ohm/p 0.01 80.00 Reverse resistive reach for the load impedance area LdAngle 5 - 70...
Page 258: Application
Section 3 1MRK504116-UUS C IED application 3.6.3.2 Application The operation of transmission networks today is in many cases close to the stability limit. The ability to accurately and reliably classify the different types of fault, so that single pole tripping and autoreclosing can be used plays an important role in this matter.
Page 259 Section 3 1MRK504116-UUS C IED application RFltRevPP and RFltRevPP for phase-to-phase faults have to be increased to avoid that FDPSPDIS (21) characteristic shall cut off some part of the zone characteristic. The necessary increased setting of the fault resistance coverage can be derived from trigonometric evaluation of the basic characteristic for respectively fault type.
Page 260 Section 3 1MRK504116-UUS C IED application ( / loop) 60° 60° ( / loop) IEC09000043_1_en.vsd IEC09000043 V1 EN Figure 109: Relation between distance protection ZMQPDIS (21) and FDPSPDIS (21) for phase-to-ground fault φloop>60° (setting parameters in italic) 1 FDPSPDIS (21) (red line) 2 ZMQPDIS(21) RFltRevPG +XN)/tan(60°)
Page 261 Section 3 1MRK504116-UUS C IED application The reactive reach in forward direction must as minimum be set to cover the measuring zone used in the Teleprotection schemes, mostly zone 2. Equation equation gives the minimum recommended reactive reach. ³ × 1.44 X1 (Equation 171) EQUATION1309 V1 EN...
Page 262 Section 3 1MRK504116-UUS C IED application The resistive reach in reverse direction must be set longer than the longest reverse zones. In blocking schemes it must be set longer than the overreaching zone at remote end that is used in the communication scheme. In equation the index ZmRv references the specific zone to be coordinated to.
Page 263 Section 3 1MRK504116-UUS C IED application ( / phase) 60° 60° ( / phase) IEC09000257_1_en.vsd IEC09000257 V1 EN Figure 110: Relation between distance protection (ZMQPDIS) (21) and FDPSPDIS (21) characteristic for phase-to-phase fault for φline>60° (setting parameters in italic) 1 FDPSPDIS (21)(red line) 2 ZMQPDIS(21) RFltRevPP 3 0.5 ·...
Page 264 Section 3 1MRK504116-UUS C IED application Resistive reach with load encroachment characteristic The procedure for calculating the settings for the load encroachment consist basically to define the load angle LdAngle, the blinder RLdFwd in forward direction and blinder RLdRev in reverse direction, as shown in figure 111. RLdFwd LdAngle LdAngle...
Page 265: Setting Parameters
Section 3 1MRK504116-UUS C IED application The resistive boundary RLdRev for load encroachment characteristic in reverse direction can be calculated in the same way as RLdFwd, but use maximum importing power that might occur instead of maximum exporting power and the relevant Vmin voltage for this condition.
Page 266: Full-Scheme Distance Measuring, Mho Characteristic Zmhpdis (21)
Section 3 1MRK504116-UUS C IED application Table 57: FDPSPDIS (21) Group settings (advanced) Name Values (Range) Unit Step Default Description OperationZ< Disabled Enabled Operation of impedance based measurement Enabled OperationI> Disabled Disabled Operation of current based measurement Enabled IPh> 10 - 2500 Start value for phase over-current element Pickup_N 10 - 2500...
Page 267 Section 3 1MRK504116-UUS C IED application System grounding The type of system grounding plays an important role when designing the protection system. In the following some hints with respect to distance protection are highlighted. Solid grounded networks In solid grounded systems the transformer neutrals are connected solidly to ground without any impedance between the transformer neutral and ground.
Page 268 Section 3 1MRK504116-UUS C IED application The high zero-sequence current in solid grounded networks makes it possible to use impedance measuring technique to detect ground fault. However, distance protection has limited possibilities to detect high resistance faults and should therefore always be complemented with other protection function(s) that can carry out the fault clearance in those cases.
Page 269 Section 3 1MRK504116-UUS C IED application What is typical for this type of network is that the magnitude of the ground-fault current is very low compared to the short-circuit current. The voltage on the healthy phases will get a magnitude of √3 times the phase voltage during the fault. The zero- sequence voltage (3V0) will have the same magnitude in different places in the network due to low voltage drop distribution.
Page 270 Section 3 1MRK504116-UUS C IED application of cross-country faults, many network operators want to selectively clear one of the two ground faults. To handle this type phenomena Phase preference logic function (PPLPHIZ) is needed, which is not common to be used in transmission applications. In this type of network, it is mostly not possible to use distance protection for detection and clearance of ground faults.
Page 271 Section 3 1MRK504116-UUS C IED application Load encroachment In some cases the load impedance might enter the zone characteristic without any fault on the protected line. The phenomenon is called load encroachment and it might occur when an external fault is cleared and high emergency load is transferred on the protected line.
Page 272 Section 3 1MRK504116-UUS C IED application LdAngle LdAngle LdAngle LdAngle en06000404_ansi.vsd ANSI06000404 V1 EN Figure 116: Load encroachment of Faulty phase identification with load encroachment for mho function FMPSPDIS (21) characteristic The use of the load encroachment feature is essential for long heavy loaded lines, where there might be a conflict between the necessary emergency load transfer and necessary sensitivity of the distance protection.
Page 273 Section 3 1MRK504116-UUS C IED application In short line applications, the major concern is to get sufficient fault resistance coverage. Load encroachment is not so common. The line length that can be recognized as a short line is not a fixed length; it depends on system parameters such as voltage and source impedance, see table 47.
Page 274 Section 3 1MRK504116-UUS C IED application blinder might cut off a larger part of the operating area of the circle (see to the right of figure 115). It is recommended to use at least one of the load discrimination functions for long heavy loaded transmission lines.
Page 275 Section 3 1MRK504116-UUS C IED application • The possibility of different setting values that influence the ground-return compensation for different distance zones within the same group of setting parameters. • Different groups of setting parameters for different operating conditions of a protected multi circuit line.
Page 276 Section 3 1MRK504116-UUS C IED application Z0 m 99000038.vsd IEC99000038 V1 EN Figure 118: Equivalent zero sequence impedance circuit of the double-circuit, parallel, operating line with a single phase-to-ground fault at the remote busbar. If the current on the parallel line have negative sign compared to the current on the protected line, that is, the current on the parallel line has an opposite direction compare to the current on the protected line, the distance function will overreach.
Page 277 Section 3 1MRK504116-UUS C IED application When the parallel line is out of service and grounded at both ends on the bus bar side of the line CT so that zero sequence current can flow on the parallel line, the equivalent zero sequence circuit of the parallel lines will be according to figure 119.
Page 278 Section 3 1MRK504116-UUS C IED application When the parallel line is out of service and not grounded, the zero sequence on that line can only flow through the line admittance to the ground. The line admittance is high which limits the zero sequence current on the parallel line to very low values. In practice, the equivalent zero sequence impedance circuit for faults at the remote bus bar can be simplified to the circuit shown in figure The line zero sequence mutual impedance does not influence the measurement of the...
Page 279 Section 3 1MRK504116-UUS C IED application ANSI09000160-1-en.vsd ANSI09000160 V1 EN Figure 123: Example of tapped line with Auto transformer This application gives rise to similar problem that was highlighted in section "Fault infeed from remote end", that is, increased measured impedance due to fault current infeed.
Page 280: Setting Guidelines
Section 3 1MRK504116-UUS C IED application For this example with a fault between T and B, the measured impedance from the T point to the fault will be increased by a factor defined as the sum of the currents from T point to the fault divided by the IED current.
Page 281 Section 3 1MRK504116-UUS C IED application The setting values of all parameters that belong to ZMHPDIS must correspond to the parameters of the protected line and be coordinated to the selectivity plan for the network. Use different setting groups for the cases when the parallel line is in operation, out of service and not grounded and out of service and grounded in both ends.
Page 282 Section 3 1MRK504116-UUS C IED application • The impedance corresponding to the protected line, plus the first zone reach of the shortest adjacent line. • The impedance corresponding to the protected line, plus the impedance of the maximum number of transformers operating in parallel on the bus at the remote end of the protected line.
Page 283 Section 3 1MRK504116-UUS C IED application Consider the possible enlarging factor that might exist due to fault infeed from adjacent lines. Equation can be used to calculate the reach in reverse direction when the zone is used for blocking scheme, weak-end infeed, and so on. ³...
Page 284 Section 3 1MRK504116-UUS C IED application × (Equation 193) EQUATION1426 V1 EN If needed, enlarge the zone reach due to the reduction by mutual coupling. Consider also the influence on the zone reach due to fault current infeed from adjacent lines. Parallel line is out of service and grounded in both ends Apply the same measures as in the case with a single set of setting parameters.
Page 285 Section 3 1MRK504116-UUS C IED application To avoid load encroachment for the phase-to-ground measuring elements, the set impedance reach of any distance protection zone must be less than 80% of the minimum load impedance. For setting of the ground-fault loop, the following formula can be used: £...
Page 286 Section 3 1MRK504116-UUS C IED application The maximum setting for phase-to-phase fault can be defined by trigonometric analyze of the same figure 125. The formula to avoid load encroachment for the phase-to-phase measuring elements will thus be according to equation 197. £...
Page 287: Setting Parameters
Section 3 1MRK504116-UUS C IED application Setting of direction for offset mho If offset mho has been selected, one can select if the offset mho shall be Non- Directional, Forward or Reverse by setting the parameter OfffsetMhoDir. When forward or reverse operation is selected, then the operation characteristic will be cut off by the directional lines used for the mho characteristic.
Page 288 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description ZAngPG 10 - 90 Angle for positive sequence line impedance for Phase-Ground loop 0.00 - 3.00 0.01 0.80 Magnitud of ground return compensation factor KN KNAng -180 - 180 Angle for ground return compensation factor ZRevPG 0.005 - 3000.000...
Page 289: Full-Scheme Distance Protection, Quadrilateral For Earth Faults Zmmpdis (21), Zmmapdis (21)
Section 3 1MRK504116-UUS C IED application 3.6.5 Full-scheme distance protection, quadrilateral for earth faults ZMMPDIS (21), ZMMAPDIS (21) Function description IEC 61850 IEC 60617 ANSI/IEEE C37.2 identification identification device number Fullscheme distance protection, ZMMPDIS quadrilateral for earth faults (zone 1) S00346 V1 EN Fullscheme distance protection, ZMMAPDIS...
Page 290 Section 3 1MRK504116-UUS C IED application xx05000215_ansi.vsd ANSI05000215 V1 EN Figure 126: Solidly grounded network The ground fault current is as high or even higher than the short-circuit current. The series impedances determine the magnitude of the ground fault current. The shunt admittance has very limited influence on the ground fault current.
Page 291 Section 3 1MRK504116-UUS C IED application Effectively grounded networks A network is defined as effectively grounded if the ground fault factor fe is less than 1.4. The ground fault factor is defined according to equation 52. (Equation 199) ANSIEQUATION1268 V1 EN Where: is the highest fundamental frequency voltage on one of the healthy phases at single phase- to-ground fault.
Page 292 Section 3 1MRK504116-UUS C IED application voltage (3U0) will have the same magnitude in different places in the network due to low voltage drop distribution. The magnitude of the total fault current can be calculated according to the formula below: (Equation 202) EQUATION1271 V3 EN Where:...
Page 293 Section 3 1MRK504116-UUS C IED application preference logic (PPLPHIZ) is needed, which is not common to be used in transmission applications. In this type of network, it is mostly not possible to use distance protection for detection and clearance of ground-faults. The low magnitude of the ground-fault current might not give start of the zero sequence measurement element or the sensitivity will be too low for acceptance.
Page 294 Section 3 1MRK504116-UUS C IED application The effect of fault current infeed from remote end is one of the most driving factors for justify complementary protection to distance protection. Load encroachment In some cases the load impedance might enter the zone characteristic without any fault on the protected line.
Page 295 Section 3 1MRK504116-UUS C IED application Load impedance area in LdAngle forward direction LdAngle LdAngle LdAngle RLdFwd RldRev ANSI05000495_2_en.vsd ANSI05000495 V2 EN Figure 129: Load encroachment phenomena and shaped load encroachment characteristic Short line application In short line applications, the major concern is to get sufficient fault resistance coverage.
Page 296 Section 3 1MRK504116-UUS C IED application Long transmission line application For long transmission lines the margin to the load impedance that is, to avoid load encroachment, will normally be a major concern. It is difficult to achieve high sensitivity for phase-to-ground fault at remote end of a long lines when the line is heavy loaded.
Page 297 Section 3 1MRK504116-UUS C IED application One example of class3 networks could be the mutual coupling between a 400 kV line and rail road overhead lines. This type of mutual coupling is not so common although it exists and is not treated any further in this manual. For each type of network class we can have three different topologies;...
Page 298 Section 3 1MRK504116-UUS C IED application × 3I K × × (Equation 206) EQUATION1275 V2 EN Where: is phase-to-ground voltage at the IED point is phase current in the faulty phase is ground to fault current is positive sequence impedance is zero sequence impedance Z<...
Page 299 Section 3 1MRK504116-UUS C IED application If the current on the parallel line have negative sign compare to the current on the protected line that is, the current on the parallel line has an opposite direction compare to the current on the protected line, the distance function will overreach. If the currents have the same direction, the distance protection will underreach.
Page 300 Section 3 1MRK504116-UUS C IED application Here the equivalent zero sequence impedance is equal to Z0-Z0m in parallel with (Z0- Z0m)/Z0-Z0m+Z0m which is equal to equation 207. (Equation 207) EQUATION2002 V4 EN The influence on the distance measurement will be a considerable overreach, which must be considered when calculating the settings.
Page 301 Section 3 1MRK504116-UUS C IED application high which limits the zero sequence current on the parallel line to very low values. In practice, the equivalent zero sequence impedance circuit for faults at the remote bus bar can be simplified to the circuit shown in figure The line zero-sequence mutual impedance does not influence the measurement of the distance protection in a faulty circuit.
Page 302 Section 3 1MRK504116-UUS C IED application × é ù é ù ë û ë û (Equation 213) EQUATION1287 V2 EN The imaginary component of the same factor is equal to equation 214. × é ù é ù ë û ë û...
Page 303 Section 3 1MRK504116-UUS C IED application infeed. For example for faults between the T point and B station the measured impedance at A and C will be ·Z (Equation 215) DOCUMENT11524-IMG3509 V2 EN æ ö æ ö × × ç ÷...
Page 304: Setting Guidelines
Section 3 1MRK504116-UUS C IED application Fault resistance The performance of distance protection for single phase-to-ground faults is very important, because normally more than 70% of the faults on transmission lines are single phase-to-ground faults. At these faults, the fault resistance is composed of three parts: arc resistance, resistance of a tower construction, and tower-footing resistance.
Page 305 Section 3 1MRK504116-UUS C IED application • The phase impedance of non transposed lines is not identical for all fault loops. The difference between the impedances for different phase-to-ground loops can be as large as 5-10% of the total line impedance. •...
Page 306 Section 3 1MRK504116-UUS C IED application æ ö × × ç ÷ è ø (Equation 218) EQUATION302 V3 EN Z AC Z CB Z CF I A+ IB ANSI05000457-2-en.vsd ANSI05000457 V2 EN Figure 137: Setting of reverse zone The reverse zone is applicable for purposes of scheme communication logic, current reversal logic, weak-end-infeed logic, and so on.
Page 307 Section 3 1MRK504116-UUS C IED application Parallel line in service – Setting of zone1 With reference to section "Parallel line applications", the zone reach can be set to 85% of protected line. Parallel line in service – setting of zone2 Overreaching zones (in general, zones 2 and 3) must overreach the protected circuit in all cases.
Page 308 Section 3 1MRK504116-UUS C IED application Parallel line is out of service and grounded in both ends Apply the same measures as in the case with a single set of setting parameters. This means that an underreaching zone must not overreach the end of a protected circuit for the single phase-to-ground faults.
Page 309 Section 3 1MRK504116-UUS C IED application Load impedance limitation, without load encroachment function The following instructions is valid when the load encroachment function is not activated (OperationLdCmp is set to Off). If the load encroachment function is to be used for all or some of the measuring zones, the load limitation for those zones according to this chapter can be omitted.
Page 310 Section 3 1MRK504116-UUS C IED application This equation is applicable only when the loop characteristic angle for the single phase- to-ground faults is more than three times as large as the maximum expected load- impedance angle. More accurate calculations are necessary according to the equation below: é...
Page 311: Setting Parameters
Section 3 1MRK504116-UUS C IED application Setting of timers for distance protection zones The required time delays for different distance-protection zones are independent of each other. Distance protection zone1 can also have a time delay, if so required for selectivity reasons. One can set the time delays for all zones (basic and optional) in a range of 0 to 60 seconds.
Page 312: Additional Distance Protection Directional Function For Earth Faults Zdardir
Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description OperationDir Disabled Forward Operation mode of directionality NonDir / Non-directional Forw / Rev Forward Reverse 0.50 - 3000.00 ohm/p 0.01 40.00 Positive sequence reactance reach 0.10 - 1000.00 ohm/p 0.01 5.00...
Page 313 Section 3 1MRK504116-UUS C IED application wideness of the operating sector. The sector is mirror-symmetric along the MTA (Maximum Torque Axis). Directional elements for ground-faults must operate at fault current values below the magnitude of load currents. As phase quantities are adversely affected by load, the use of sequence quantities are preferred as polarizing quantities for ground directional elements.
Page 314 Section 3 1MRK504116-UUS C IED application current in the neutral of a power transformer. The relay characteristic AngleRCA is fixed and equals 0 degrees. Care must be taken to ensure that neutral current direction remains unchanged during all network configurations and faults, and therefore all transformer configurations/constructions are not suitable for polarization.
Page 315: Setting Parameters
Section 3 1MRK504116-UUS C IED application 3.6.6.3 Setting parameters Table 66: ZDARDIR Group settings (basic) Name Values (Range) Unit Step Default Description IBase 1 - 99999 3000 Base setting for current values VBase 0.05 - 2000.00 0.05 400.00 Base setting for voltage level in kV PolMode -3U0 -3U0...
Page 316: Setting Guidelines
Section 3 1MRK504116-UUS C IED application In the pilot channel blocking scheme a fault inception detected by a fast acting change detector is used to send a block signal to the remote end in order to block an overreaching zone. If the fault is later detected as a forward fault the earlier sent blocking signal is stopped.
Page 317: Setting Parameters
Section 3 1MRK504116-UUS C IED application SIRLevel: The setting of the parameter SIRLevel is by default set to 10. This is a suitable setting for applications with CVT to avoid transient overreach due to the CVT dynamics. If magnetic voltage transformers are used, set SIRLevel to 15 the highest level. IMinOp: The minimum operate current for the SIR measurement is by default set to 20% of IBase.
Page 318: Application
Section 3 1MRK504116-UUS C IED application 3.6.8.1 Application The operation of transmission networks today is in many cases close to the stability limit. Due to environmental considerations the rate of expansion and reinforcement of the power system is reduced for example, difficulties to get permission to build new power lines.
Page 319 Section 3 1MRK504116-UUS C IED application I1LowLevel: The setting of the positive current threshold I1LowLevel used in the sequence based part of the phase selector for identifying three-phase fault, is by default set to 10% of IBase. The default setting is suitable in most cases, but must be checked against the minimum three-phase current that occurs at remote end of the line with reasonable fault resistance.
Page 320 Section 3 1MRK504116-UUS C IED application RLdFw LdAngle LdAngle LdAngle LdAngle RLdRv ANSI10000192_1_en.vsd ANSI10000192 V1 EN Figure 138: Load encroachment characteristic The calculation of the apparent load impedance Z and minimum load impedance load can be done according to equations: loadmin Zload = ×...
Page 321: Setting Parameters
Section 3 1MRK504116-UUS C IED application æ ö LdAngle a ç ÷ è ø (Equation 240) EQUATION1623-ANSI V1 EN where: Pmax is the maximal active power transfer during emergency conditions and Smax is the maximal apparent power transfer during emergency conditions. The RLd can be calculated according to equation 241: ×...
Page 322: Distance Protection Zone, Quadrilateral Characteristic, Separate Settings Zmrpdis (21), Zmrapdis (21) And Zdrdir (21D)
Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description V2MinOp 1 - 100 Minimum operate negative sequence voltage for ph sel INRelPG 10 - 100 3I0 limit for release ph-g measuring loops in % of max phase current 3I0BLK_PP 10 - 100 3I0 limit for blocking phase-to-phase...
Page 323 Section 3 1MRK504116-UUS C IED application System grounding The type of system grounding plays an important role when designing the protection system. Some hints with respect to distance protection are highlighted below. Solid grounded networks In solidly grounded systems, the transformer neutrals are connected solidly to ground without any impedance between the transformer neutral and ground.
Page 324 Section 3 1MRK504116-UUS C IED application The high zero sequence current in solid grounded networks makes it possible to use impedance measuring technique to detect ground-fault. However, distance protection has limited possibilities to detect high resistance faults and should therefore always be complemented with other protection function(s) that can carry out the fault clearance in those cases.
Page 325 Section 3 1MRK504116-UUS C IED application detect high resistance faults and should therefore always be complemented with other protection function(s) that can carry out the fault clearance in this case. High impedance grounded networks In high impedance networks, the neutral of the system transformers are connected to the ground through high impedance, mostly a reactance in parallel with a high resistor.
Page 326 Section 3 1MRK504116-UUS C IED application en05000216_ansi.vsd ANSI05000216 V1 EN Figure 140: High impedance grounded network. The operation of high impedance grounded networks is different compared to solid grounded networks where all major faults have to be cleared very fast. In high impedance grounded networks, some system operators do not clear single phase-to- ground faults immediately;...
Page 327 Section 3 1MRK504116-UUS C IED application The infeed factor (I can be very high, 10-20 depending on the differences in source impedances at local and remote end. p*ZL (1-p)*ZL en05000217_ansi.vsd ANSI05000217 V1 EN Figure 141: Influence of fault current infeed from remote line end The effect of fault current infeed from remote line end is one of the most driving factors for justify complementary protection to distance protection.
Page 328 Section 3 1MRK504116-UUS C IED application necessary sensitivity of the distance protection. The function can also preferably be used on heavy loaded medium long lines. For short lines, the major concern is to get sufficient fault resistance coverage and load encroachment is not a major problem. So, for short lines, the load encroachment function could preferably be switched off.
Page 329 Section 3 1MRK504116-UUS C IED application The IED's ability to set resistive and reactive reach independent for positive and zero sequence fault loops and individual fault resistance settings for phase-to-phase and phase- to-ground fault together with load encroachment algorithm improves the possibility to detect high resistive faults without conflict with the load impedance, see figure 49.
Page 330 Section 3 1MRK504116-UUS C IED application experience mutual coupling, and some coupling exists even for lines that are separated by 100 meters or more. The mutual coupling does influence the zero sequence impedance to the fault point but it does not normally cause voltage inversion. It can be shown from analytical calculations of line impedances that the mutual impedances for positive and negative sequence are very small (<...
Page 331 Section 3 1MRK504116-UUS C IED application parallel line in service. parallel line out of service and grounded. parallel line out of service and not grounded. Parallel line in service This type of application is very common and applies to all normal sub-transmission and transmission networks.
Page 332 Section 3 1MRK504116-UUS C IED application FAULT en05000221_ansi.vsd ANSI05000221 V1 EN Figure 143: Class 1, parallel line in service. The equivalent zero sequence circuit of the lines can be simplified, see figure 52. IEC09000253_1_en.vsd IEC09000253 V1 EN Figure 144: Equivalent zero sequence impedance circuit of the double-circuit, parallel, operating line with a single phase-to-ground fault at the remote busbar.
Page 333 Section 3 1MRK504116-UUS C IED application The second part in the parentheses is the error introduced to the measurement of the line impedance. If the current on the parallel line has negative sign compared to the current on the protected line, that is, the current on the parallel line has an opposite direction compared to the current on the protected line, the distance function will overreach.
Page 334 Section 3 1MRK504116-UUS C IED application The zero sequence mutual coupling can reduce the reach of distance protection on the protected circuit when the parallel line is in normal operation. The reduction of the reach is most pronounced with no current infeed in the IED closest to the fault. This reach reduction is normally less than 15%.
Page 335 Section 3 1MRK504116-UUS C IED application The influence on the distance measurement will be a considerable overreach, which must be considered when calculating the settings. It is recommended to use a separate setting group for this operation condition since it will reduce the reach considerably when the line is in operation.
Page 336 Section 3 1MRK504116-UUS C IED application IEC09000255_1_en.vsd IEC09000255 V1 EN Figure 148: Equivalent zero sequence impedance circuit for a double-circuit line with one circuit disconnected and not grounded. Tapped line application en05000224_ansi.vsd ANSI05000224 V1 EN Figure 149: Example of tapped line with Auto transformer. This application gives rise to similar problem that was highlighted in section "Fault infeed from remote end"...
Page 337 Section 3 1MRK504116-UUS C IED application ·Z (Equation 260) DOCUMENT11524-IMG3509 V2 EN × × Z ) ( (Equation 261) EQUATION1714 V1 EN Where: and Z is the line impedance from the A respective C station to the T point. and I is fault current from A respective C station for fault between T and B.
Page 338: Setting Guidelines
Section 3 1MRK504116-UUS C IED application single phase-to-ground faults. At these faults, the fault resistance is composed of three parts: arc resistance, resistance of a tower construction, and tower-footing resistance.The resistance is also depending on the presence of ground shield conductor at the top of the tower, connecting tower-footing resistance in parallel.
Page 339 Section 3 1MRK504116-UUS C IED application Setting of zone 1 The different errors mentioned earlier usually require a limitation of the underreaching zone (normally zone 1) to 75 - 90% of the protected line. In case of parallel lines, consider the influence of the mutual coupling according to section "Parallel line application with mutual coupling"...
Page 340 Section 3 1MRK504116-UUS C IED application Z AC Z CB Z CF I A+ IB ANSI05000457-2-en.vsd ANSI05000457 V2 EN Figure 150: Setting of overreaching zone Setting of reverse zone The reverse zone is applicable for purposes of scheme communication logic, current reversal logic, weak-end infeed logic, and so on.
Page 341 Section 3 1MRK504116-UUS C IED application Parallel line in service – setting of zone 2 Overreaching zones (in general, zones 2 and 3) must overreach the protected circuit in all cases. The greatest reduction of a reach occurs in cases when both parallel circuits are in service with a single phase-to-ground fault located at the end of a protected line.
Page 342 Section 3 1MRK504116-UUS C IED application Set the values of the corresponding zone (zero-sequence resistance and reactance) equal to: æ ö × ç ------------------------- - ÷ è ø (Equation 270) EQUATION561 V1 EN æ ö × ------------------------- - ç – ÷...
Page 343 Section 3 1MRK504116-UUS C IED application £ × RFPP 3 X1 (Equation 275) IECEQUATION2306 V1 EN Load impedance limitation, without load encroachment function The following instructions are valid when Phase selection with load enchroachment, quadrilateral characteristic function FRPSPDIS (21) is not activated. To deactivate the function, the setting of the load resistance RLdFwd and RLdRev in FRPSPDIS (21) must be set to max value (3000).
Page 344 Section 3 1MRK504116-UUS C IED application £ × RFP G 0.8 Z loa d (Equation 278) EQUATION1720 V1 EN This equation is applicable only when the loop characteristic angle for the single phase- to-ground faults is more than three times as large as the maximum expected load- impedance angle.
Page 345: Setting Parameters
Section 3 1MRK504116-UUS C IED application Load impedance limitation, with Phase selection with load encroachment, quadrilateral characteristic function activated The parameters for shaping of the load encroachment characteristic are found in the description of Phase selection with load encroachment, quadrilateral characteristic function (FRPSPDIS ,21).
Page 346 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description X1PP 0.10 - 3000.00 ohm/p 0.01 30.00 Positive sequence reactance reach Ph-Ph R1PP 0.01 - 1000.00 ohm/p 0.01 5.00 Positive seq. resistance for characteristic angle, Ph-Ph RFPP 0.10 - 3000.00 ohm/l 0.01...
Page 347: Phase Selection, Quadrilateral Characteristic With Settable Angle Frpspdis (21)
Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description RFPP 0.10 - 3000.00 ohm/l 0.01 30.00 Fault resistance reach in ohm/loop, Ph-Ph X1PG 0.10 - 3000.00 ohm/p 0.01 30.00 Positive sequence reactance reach Ph-G R1PG 0.01 - 1000.00 ohm/p 0.01 5.00...
Page 348 Section 3 1MRK504116-UUS C IED application The heavy load transfer that is common in many transmission networks may in some cases be in opposite to the wanted fault resistance coverage. Therefore, the function has a built in algorithm for load encroachment, which gives the possibility to enlarge the resistive setting of both the Phase selection with load encroachment and the measuring zones without interfering with the load.
Page 349 Section 3 1MRK504116-UUS C IED application RLdFwd LdAngle LdAngle LdAngle LdAngle RLdRev en05000196_ansi.vsd ANSI05000196 V1 EN Figure 151: Characteristic of load encroachment function The influence of load encroachment function on the operation characteristic is dependent on the chosen operation mode of the FRPSPDIS (21) function. When output signal PHSELZis selected, the characteristic for the FRPSPDIS (21) (and also zone measurement depending on settings) can be reduced by the load encroachment characteristic (as shown in figure 152).
Page 350 Section 3 1MRK504116-UUS C IED application PHSELZ DLECND ANSI10000099-1-en.vsd ANSI10000099 V1 EN Figure 152: Operating characteristic when load encroachment is activated When the "phase selection" is set to operate together with a distance measuring zone the resultant operate characteristic could look something like in figure 153. The figure shows a distance measuring zone operating in forward direction.
Page 351 Section 3 1MRK504116-UUS C IED application "Phase selection" "quadrilateral" zone Distance measuring zone Load encroachment characteristic Directional line en05000673.vsd IEC05000673 V1 EN Figure 153: Operation characteristic in forward direction when load encroachment is enabled Figure is valid for phase-to-ground. During a three-phase fault, or load, when the "quadrilateral"...
Page 352 Section 3 1MRK504116-UUS C IED application (ohm/phase) Phase selection ”Quadrilateral” zone Distance measuring zone (ohm/phase) en05000674.vsd IEC05000674 V1 EN Figure 154: Operation characteristic for FRPSPDIS (21) in forward direction for three-phase fault, ohm/phase domain The result from rotation of the load characteristic at a fault between two phases is presented in fig 155.
Page 353: Load Encroachment Characteristics
Section 3 1MRK504116-UUS C IED application IEC08000437.vsd IEC08000437 V1 EN Figure 155: Rotation of load characteristic for a fault between two phases This rotation may seem a bit awkward, but there is a gain in selectivity by using the same measurement as for the quadrilateral characteristic since not all phase-to-phase loops will be fully affected by a fault between two phases.
Page 354 Section 3 1MRK504116-UUS C IED application For normal overhead lines, the angle for the loop impedance φ for phase-to-ground fault defined according to equation 170. arctan (Equation 282) EQUATION2115 V1 EN But in some applications, for instance cable lines, the angle of the loop might be less than the set angle.
Page 355 Section 3 1MRK504116-UUS C IED application R PG R PG R PG (Minimum setting) RFRevPG RFFwdPG RFPG RFPG 90° φ loop φ loop (Ohm/loop) RFPG RFPG ANSI08000435-1-en.vsd ANSI08000435 V1 EN Figure 156: Relation between measuring zone and FRPSPDIS (21) characteristic Reactive reach The reactive reach in forward direction must as minimum be set to cover the measuring zone used in the Teleprotection schemes, mostly zone 2.
Page 356 Section 3 1MRK504116-UUS C IED application ³ × 1.44 X0 (Equation 284) EQUATION1310 V1 EN where: is the reactive reach for the zone to be covered by FRPSPDIS (21), and the constant 1.44 is a safety margin is the zero-sequence reactive reach for the zone to be covered by FRPSPDIS (21) The reactive reach in reverse direction is automatically set to the same reach as for forward direction.
Page 357 Section 3 1MRK504116-UUS C IED application Resistive reach The resistive reach in reverse direction must be set longer than the longest reverse zones. In blocking schemes it must be set longer than the overreaching zone at remote end that is used in the communication scheme. In equation the index ZmRv references the specific zone to be coordinated to.
Page 358 Section 3 1MRK504116-UUS C IED application where: RFPP is the setting of the longest reach of the overreaching zones that must be covered by FRPSPDIS (21). Equation are is also valid for three-phase fault. The proposed margin of 25% will cater for the risk of cut off of the zone measuring characteristic that might occur at three-phase fault when FRPSPDIS (21)characteristic angle is changed from 60 degrees to 90 degrees or from 70 degrees to 100 degrees (rotated 30°...
Page 359: Setting Guidelines
Section 3 1MRK504116-UUS C IED application phase R1PP= tan 70° × × 0.5 RFFwdPP 0.5*RFPP 0.5*RFPP phase 0.5*RFPP 0.5*RFPP 0.5*RFPP 0.5*RFPP × R1PP= tan 70° ANSI08000249-1- en.vsd ANSI08000249 V1 EN Figure 157: Relation between measuring zone and FRPSPDIS (21) characteristic for phase-to-phase fault for φline>70°...
Page 360 Section 3 1MRK504116-UUS C IED application Resistive reach with load encroachment characteristic The procedure for calculating the settings for the load encroachment consist basically to define the load angle LdAngle, the blinder RLdFwd in forward direction and blinder RLdRev in reverse direction, as shown in figure 111. RLdFwd LdAngle LdAngle...
Page 361: Setting Parameters
Section 3 1MRK504116-UUS C IED application power that might occur instead of maximum exporting power and the relevant Vmin voltage for this condition. Minimum operate currents FRPSPDIS (21) has two current setting parameters, which blocks the respective phase- to-ground loop and phase-to-phase loop if the RMS value of the phase current (ILn) and phase difference current (ILmILn) is below the settable threshold.
Page 362: Power Swing Detection Zmrpsb (68)
Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description RFltRevPG 1.00 - 9000.00 ohm/l 0.01 100.00 Fault resistance reach, Ph-G, reverse IMinPUPP 5 - 500 Minimum pickup delta current (2 x current of lagging phase) for Phase-to-phase loops IMinPUPG 5 - 500 Minimum pickup phase current for Phase-to-...
Page 363 Section 3 1MRK504116-UUS C IED application in the power system, which reflects further on in oscillating power flow between two parts of the system - the power swings from one part to another - and vice versa. Distance IEDs located in interconnected networks see these power swings as the swinging of the measured impedance in relay points.
Page 364: Setting Guidelines
Section 3 1MRK504116-UUS C IED application 3.6.11.2 Setting guidelines Setting guidelines are prepared in the form of a setting example for the protected power line as part of a two-machine system presented in figure 160. = const = f(t) 99001019_ansi.vsd ANSI99001019 V1 EN Figure 160: Protected power line as part of a two-machine system...
Page 365 Section 3 1MRK504116-UUS C IED application Rated primary current of current protection transformers used 1200 EQUATION1326 V1 EN Rated secondary current of current protection transformers used EQUATION1734 V1 EN Line positive sequence impedance 10.71 75.6 EQUATION1328 V1 EN Positive sequence source impedance behind A bus 1.15 43.5 EQUATION1329 V1 EN...
Page 366 Section 3 1MRK504116-UUS C IED application 144.4 1000 (Equation 293) EQUATION1736-ANSI V1 EN The minimum load resistance R at maximum load and minimum system voltage is Lmin equal to equation 294. × × 144.4 0.95 137.2 (Equation 294) EQUATION1338 V1 EN The system impedance Z is determined as a sum of all impedance in an equivalent two- machine system, see figure 160.
Page 367 Section 3 1MRK504116-UUS C IED application ANSI05000283 V1 EN Figure 161: Impedance diagrams with corresponding impedances under consideration The outer boundary of oscillation detection characteristic in forward direction RLdOutFw should be set with certain safety margin K compared to the minimum expected load resistance R .
Page 368 Section 3 1MRK504116-UUS C IED application is not known, the following approximations may be considered for lines with rated voltage 400 kV: • = 0.9 for lines longer than 100 miles • = 0.85 for lines between 50 and 100 miles •...
Page 369 Section 3 1MRK504116-UUS C IED application ° - ° 76.5 64.5 13.3 × ° × ° 2.5 360 (Equation 303) EQUATION1347 V1 EN The general tendency should be to set the tP1 time to at least 30 ms, if possible. Since it is not possible to further increase the external load angle δ...
Page 370 Section 3 1MRK504116-UUS C IED application tP2 = 10 ms Consider RLdInFw = 75.0Ω. Do not forget to adjust the setting of load encroachment resistance RLdFwd in Phase selection with load encroachment (FDPSPDIS, 21 or FRPSPDIS, 21) to the value equal to or less than the calculated value RLdInFw.
Page 371: Setting Parameters
Section 3 1MRK504116-UUS C IED application System studies should determine the settings for the hold timer tH. The purpose of this timer is, to secure continuous output signal from Power swing detection function (ZMRPSB, 68) during the power swing, even after the transient impedance leaves ZMRPSB (68) operating characteristic and is expected to return within a certain time due to continuous swinging.
Page 372: Power Swing Logic Zmrpsl
Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description 0.000 - 60.000 0.001 3.000 Timer for overcoming single-pole reclosing dead time IMinPUPG 5 - 30 Minimum operate current in % of IBase IBase 1 - 99999 3000 Base setting for current level settings Table 79:...
Page 373 Section 3 1MRK504116-UUS C IED application distance protection. The second fault can, but does not need to, occur within this time interval. • Fault on an adjacent line (behind the B substation, see figure 162) causes the measured impedance to enter the operate area of ZMRPSB (68) function and, for example, the zone 2 operating characteristic (see figure 163).
Page 374: Setting Guidelines
Section 3 1MRK504116-UUS C IED application Measured impedance at initital fault position Zone 2 Zone 1 Impedance locus at initial power swing after the fault clearance ZMRPSB operating characteristic IEC99000181_2_en.vsd IEC99000181 V2 EN Figure 163: Impedance trajectory within the distance protection zones 1 and 2 during and after the fault on line B –...
Page 375 Section 3 1MRK504116-UUS C IED application Communication and tripping logic as used by the power swing distance protection zones is schematically presented in figure 164. The operation of the power swing zones is conditioned by the operation of Power swing detection (ZMRPSB, 68) function. They operate in PUTT or POTT communication scheme with corresponding distance protection zones at the remote line end.
Page 376 Section 3 1MRK504116-UUS C IED application Configuration Configure the BLOCK input to any combination of conditions, which are supposed to block the operation of logic. Connection to detected fuse failure conditions is required as a minimum. The PUDOG functional input should be configured to the PICKUP signal of any line ground fault overcurrent protection function within the IED.
Page 377 Section 3 1MRK504116-UUS C IED application Set the reactive reach for the power swing zones according to the system selectivity planning. The reach of the underreaching zone should not exceed 85% of the protected line length. The reach of the overreaching zone should be at least 120% of the protected line length.
Page 378 Section 3 1MRK504116-UUS C IED application Time delay for the overreaching power swing zone is not an important parameter, if the zone is used only for the protection purposes at power-swings. Consider the normal time grading, if the overreaching zone serves as a time delayed back- up zone, which is not blocked by the operation of Power swing detection (ZMRPSB, 68) function.
Page 379 Section 3 1MRK504116-UUS C IED application BLKZMOR PUZMUR PUZMURPS 0-tZL BLOCK PUZMOR 0-tDZ PUZMPSD PUPSD -loop en06000237_ansi.vsd ANSI06000237 V1 EN Figure 165: Blocking and tripping logic for evolving power swings No system oscillation should be detected in power system. Configure for this reason the PUPSD functional input to the PICKUP functional output of ZMRPSB (68) function or to any binary input signal indicating the detected oscillations within the power system.
Page 380: Setting Parameters
Section 3 1MRK504116-UUS C IED application of the faults on adjacent power lines. It is necessary to consider the possibility for the faults to occur close to the set reach of the underreaching distance protection zone, which might result in prolonged operate times of zone 1 (underreaching zone) compared to zone 2 pickuped time (overreaching zone).
Page 381 Section 3 1MRK504116-UUS C IED application The situation with pole slip of a generator can be caused by different reasons. A short circuit occurs in the external power grid, close to the generator. If the fault clearance time is too long, the generator will accelerate so much, so the synchronism cannot be maintained.
Page 382 Section 3 1MRK504116-UUS C IED application the generator itself, the generator should be tripped as fast as possible. If the locus of the out of step centre is located in the power system outside the generators the power system should, if possible, be split into two parts, and the generators should be kept in service.
Page 383: Setting Guidelines
Section 3 1MRK504116-UUS C IED application The operation of a generator having pole slip will give risk of damages to the generator block. • At each pole slip there will be significant torque impact on the generator-turbine shaft. • In asynchronous operation there will be induction of currents in parts of the generator normally not carrying current, thus resulting in increased heating.
Page 384 Section 3 1MRK504116-UUS C IED application Zone 1 Zone 2 X’ Pole slip impedance movement Zone 2 TripAngle Zone 1 WarnAngle IEC06000548_2_en.vsd IEC06000548 V2 EN Figure 168: Settings for the Pole slip detection function The ImpedanceZA is the forward impedance as show in figure 168. ZA should be the sum of the transformer impedance XT and the equivalent impedance of the external system ZS.
Page 385 Section 3 1MRK504116-UUS C IED application The ImpedanceZB is the reverse impedance as show in figure 168. ZB should be equal to the generator transient reactance X'd. The impedance is given in % of the base impedance, see equation 316. The ImpedanceZC is the forward impedance giving the borderline between zone 1 and zone 2.
Page 386 Section 3 1MRK504116-UUS C IED application ZA = forward source impedance Line impedance = ZC IEC07000014_2_en.vsd IEC07000014 V2 EN Figure 169: Line application of pole slip protection If the apparent impedance crosses the impedance line ZB – ZA this is the detection criterion of out of step conditions, see figure 170.
Page 387 Section 3 1MRK504116-UUS C IED application Apparent anglePhi impedance at normal load IEC07000015_2_en.vsd IEC07000015 V2 EN Figure 170: Impedances to be set for pole slip protection The setting parameters of the protection is: Line + source impedance in the forward direction The source impedance in the reverse direction The line impedance in the forward direction AnglePhi :...
Page 388 Section 3 1MRK504116-UUS C IED application With all phase voltages and phase currents available and fed to the protection IED, it is recommended to set the MeasureMode to positive sequence. The impedance settings are set in pu with ZBase as reference: UBase ZBase SBase...
Page 389 Section 3 1MRK504116-UUS C IED application The warning angle (StartAngle) should be chosen not to cross into normal operating area. The maximum line power is assumed to be 2000 MVA. This corresponds to apparent impedance: 2000 (Equation 323) EQUATION1967 V1 EN Simplified, the example can be shown as a triangle, see figure 171.
Page 390 Section 3 1MRK504116-UUS C IED application For the TripAngle it is recommended to set this parameter to 90° to assure limited stress for the circuit breaker. In a power system it is desirable to split the system into predefined parts in case of pole slip.
Page 391 Section 3 1MRK504116-UUS C IED application Apparent anglePhi impedance at normal load IEC07000015_2_en.vsd IEC07000015 V2 EN Figure 173: Impedances to be set for pole slip protection PSPPPAM (78) The setting parameters of the protection are: Block transformer + source impedance in the forward direction The generator transient reactance The block transformer reactance AnglePhi...
Page 392 Section 3 1MRK504116-UUS C IED application Use the following block transformer data: VBase : 20 kV (low voltage side) SBase set to 200 MVA : 15% Short circuit power from the external network without infeed from the protected line: 5000 MVA (assumed to a pure reactance). We have all phase voltages and phase currents available and fed to the protection IED.
Page 393 Section 3 1MRK504116-UUS C IED application × 0.15 (Equation 330) EQUATION1974 V1 EN This corresponds to: Ð 0.15 0.15 90 (Equation 331) EQUATION1975 V2 EN Set ZC to 0.15 and AnglePhi to 90°. The warning angle (StartAngle) should be chosen not to cross into normal operating area.
Page 394 Section 3 1MRK504116-UUS C IED application Zload en07000016.vsd IEC07000016 V1 EN Figure 174: Simplified figure to derive StartAngle 0.25 0.19 ³ » angleStart arctan arctan arctan + arctan = 7.1 + 5.4 Zload Zload (Equation 333) EQUATION1977 V2 EN In case of minor damped oscillations at normal operation we do not want the protection to start.
Page 395: Setting Parameters
Section 3 1MRK504116-UUS C IED application 3.6.13.3 Setting parameters Table 81: PSPPPAM (78) Group settings (basic) Name Values (Range) Unit Step Default Description Operation Disabled Disabled Operation Enable / Disable Enabled OperationZ1 Disabled Enabled Operation Enable/Disable zone Z1 Enabled OperationZ2 Disabled Enabled Operation Enable/Disable zone Z2...
Page 396: Application
Section 3 1MRK504116-UUS C IED application 3.6.14.1 Application Phase preference logic function PPLPHIZ is an auxiliary function to Distance protection zone, quadrilateral characteristic ZMQPDIS (21) and Phase selection with load encroachment, quadrilateral characteristic function FDPSPDIS (21). The purpose is to create the logic in resonance or high resistive grounded systems (normally sub- transmission) to achieve the correct phase selective tripping during two simultaneous single-phase ground-faults in different phases on different line sections.
Page 397 Section 3 1MRK504116-UUS C IED application en06000551_ansi.vsd ANSI06000551 V1 EN Figure 176: The voltage increase on healthy phases and occurring neutral point voltage (3V0) at a single phase-to-ground fault and an occurring cross- country fault on different feeders in a sub-transmission network, high impedance (resistance, reactance) grounded PPLPHIZ is connected between Distance protection zone, quadrilateral characteristic function ZMQPDIS (21) and ZMQAPDIS (21) and Phase selection with load...
Page 398 Section 3 1MRK504116-UUS C IED application ZMQAPDIS (21) FDPSPDIS (21) I3P* TRIP W2_CT_B_I3P I3P* TRIP TR_A W2_VT_B_v3P V3P* V3P* FALSE BLOCK TR_B BLOCK FWD_A PHS_L1 LOVBZ TR_C W2_FSD1-BLKZ DIRCND FWD_B PHS_L2 PICKUP FALSE BLKTR FWD_C PHS_L3 PHSEL PU_A FWD_G DIRCND PU_B REV_A PU_C...
Page 399: Setting Guidelines
Section 3 1MRK504116-UUS C IED application IC=IG IA=IG en06000553_ansi.vsd ANSI06000553 V1 EN Figure 178: The currents in the phases at a double ground fault The function has a block input (BLOCK) to block start from the function if required in certain conditions.
Page 400 Section 3 1MRK504116-UUS C IED application IBase: Base current level in A. The base current is used as reference for the neutral current setting factor. Normally it is set to the current transformer rated current. PU27PN: The setting of the phase-to- ground voltage level (phase voltage) which is used by the evaluation logic to verify that a fault exists in the phase.
Page 401: Setting Parameters
Section 3 1MRK504116-UUS C IED application 3.6.14.3 Setting parameters Table 84: PPLPHIZ Group settings (basic) Name Values (Range) Unit Step Default Description IBase 1 - 99999 3000 Base current VBase 0.05 - 2000.00 0.01 400.00 Base voltage OperMode No Filter No Filter Operating mode (c=cyclic,a=acyclic) NoPref...
Page 402: Application
Section 3 1MRK504116-UUS C IED application 3.7.1.1 Application Long transmission lines often transfer great quantities of electric power from production to consumption areas. The unbalance of the produced and consumed electric power at each end of the transmission line is very large. This means that a fault on the line can easily endanger the stability of a complete system.
Page 403 Section 3 1MRK504116-UUS C IED application IBase: Base current in primary A. This current is used as reference for current setting. If possible to find a suitable value the rated current of the protected object is chosen. OpModeSel: This parameter can be set to 2 out of 3 or 1 out of 3. The setting controls the minimum number of phase currents that must be larger than the set operate current Pickup for operation.
Page 404 Section 3 1MRK504116-UUS C IED application Fault ANSI09000023-1-en.vsd ANSI09000023 V1 EN Figure 180: Through fault current from B to A: I The IED must not trip for any of the two through-fault currents. Hence the minimum theoretical current setting (Imin) will be: ³...
Page 405 Section 3 1MRK504116-UUS C IED application Fault ANSI09000024-1-en.vsd ANSI09000024 V1 EN Figure 181: Fault current: I The IED setting value Pickup is given in percentage of the primary base current value, IBase. The value for Pickup is given from this formula: ×...
Page 406 Section 3 1MRK504116-UUS C IED application Line 1 Fault Line 2 ANSI09000025_2_en.vsd ANSI09000025 V2 EN Figure 182: Two parallel lines. Influence from parallel line to the through fault current: I The minimum theoretical current setting for the overcurrent protection function (Imin) will be: ³...
Page 407: Setting Parameters
Section 3 1MRK504116-UUS C IED application 3.7.1.3 Setting parameters Table 85: PHPIOC (50) Group settings (basic) Name Values (Range) Unit Step Default Description Operation Disabled Disabled Disable/Enable Operation Enabled IBase 1 - 99999 3000 Base current OpModeSel 2 out of 3 1 out of 3 Select operation mode (2 of 3 / 1 of 3) 1 out of 3...
Page 408 Section 3 1MRK504116-UUS C IED application If VT inputs are not available or not connected, setting parameter DirModeSelx (x = step 1, 2, 3 or 4) shall be left to default value Non- directional. In many applications several steps with different current pick up levels and time delays are needed.
Page 409: Setting Guidelines
Section 3 1MRK504116-UUS C IED application ground fault protection. Therefore it is possible to make a choice how many phases, at minimum, that have to have current above the pick-up level, to enable operation. If set 1 of 3 it is sufficient to have high current in one phase only. If set 2 of 3 or 3 of 3 single- phase ground faults are not detected.
Page 410 Section 3 1MRK504116-UUS C IED application 2ndHarmStab: Operate level of 2nd harmonic current restrain set in % of the fundamental current. The setting range is 5 - 100% in steps of 1%. Default setting is 20%. ANSI09000636-1-en.vsd ANSI09000636 V1 EN Figure 183: Directional function characteristic 1.
Page 411 Section 3 1MRK504116-UUS C IED application DirModeSelx: The directional mode of step x. Possible settings are Disabled/Non- directional/Forward/Reverse. Characteristx: Selection of time characteristic for step x. Definite time delay and different types of inverse time characteristics are available according to table 87. Table 87: Inverse time characteristics Curve name...
Page 412 Section 3 1MRK504116-UUS C IED application MultPUx: Multiplier for scaling of the current setting value. If a binary input signal (enableMultiplier) is activated the current operation level is increase by this setting constant. Setting range: 1.0-10.0 txMin: Minimum operate time for all inverse time characteristics. At high currents the inverse time characteristic might give a very short operation time.
Page 413 Section 3 1MRK504116-UUS C IED application Table 88: Reset possibilities Curve name Curve index no. Instantaneous IEC Reset (constant time) ANSI Reset (inverse time) The delay characteristics are described in the technical reference manual. There are some restrictions regarding the choice of reset delay. For the definite time delay characteristics the possible delay time settings are instantaneous (1) and IEC (2 = set constant time reset).
Page 414 Section 3 1MRK504116-UUS C IED application 2nd harmonic restrain If a power transformer is energized there is a risk that the transformer core will saturate during part of the period, resulting in an inrush transformer current. This will give a declining residual current in the network, as the inrush current is deviating between the phases.
Page 415 Section 3 1MRK504116-UUS C IED application Current I Line phase current Pickup current Reset current The IED does not reset Time t ANSI09000146-en-1.vsd ANSI09000146 V1 EN Figure 185: Pickup and reset current for an overcurrent protection The lowest setting value can be written according to equation 341. Im ax ³...
Page 416 Section 3 1MRK504116-UUS C IED application The maximum load current on the line has to be estimated. There is also a demand that all faults, within the zone that the protection shall cover, must be detected by the phase overcurrent protection. The minimum fault current Iscmin, to be detected by the protection, must be calculated.
Page 417 Section 3 1MRK504116-UUS C IED application The operate times of the phase overcurrent protection has to be chosen so that the fault time is so short that protected equipment will not be destroyed due to thermal overload, at the same time as selectivity is assured. For overcurrent protection, in a radial fed network, the time setting can be chosen in a graphical way.
Page 418 Section 3 1MRK504116-UUS C IED application Protection operation 15-60 ms time: Protection resetting time: 15-60 ms Breaker opening time: 20-120 ms Example for time coordination Assume two substations A and B directly connected to each other via one line, as shown in the figure 187.
Page 419: Setting Parameters
Section 3 1MRK504116-UUS C IED application There are uncertainties in the values of protection operation time, breaker opening time and protection resetting time. Therefore a safety margin has to be included. With normal values the needed time difference can be calculated according to equation 345. D ³...
Page 420 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description Characterist1 ANSI Ext. inv. ANSI Def. Time Selection of time delay curve type for step 1 ANSI Very inv. ANSI Norm. inv. ANSI Mod. inv. ANSI Def. Time L.T.E.
Page 421 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description 0.000 - 60.000 0.001 0.400 Definitive time delay of step 2 0.05 - 999.00 0.01 0.05 Time multiplier for the inverse time delay for step 2 IMin2 1 - 10000 Minimum operate current for step2 in % of IBase...
Page 422 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description Characterist4 ANSI Ext. inv. ANSI Def. Time Selection of time delay curve type for step 4 ANSI Very inv. ANSI Norm. inv. ANSI Def. Time L.T.E. inv. L.T.V.
Page 423 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description tCCrv1 0.1 - 10.0 Parameter C for customer programmable curve for step 1 tPRCrv1 0.005 - 3.000 0.001 0.500 Parameter PR for customer programmable curve for step 1 tTRCrv1 0.005 - 100.000 0.001...
Page 424: Instantaneous Residual Overcurrent Protection Efpioc (50N)
Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description tTRCrv3 0.005 - 100.000 0.001 13.500 Parameter TR for customer programmable curve for step 3 tCRCrv3 0.1 - 10.0 Parameter CR for customer programmable curve for step 3 HarmRestrain3 Disabled Disabled...
Page 425: Application
Section 3 1MRK504116-UUS C IED application 3.7.3.1 Application In many applications, when fault current is limited to a defined value by the object impedance, an instantaneous ground-fault protection can provide fast and selective tripping. The Instantaneous residual overcurrent EFPIOC (50N), which can operate in 15 ms (50 Hz nominal system frequency) for faults characterized by very high currents, is included in the IED.
Page 426 Section 3 1MRK504116-UUS C IED application Fault ANSI09000023-1-en.vsd ANSI09000023 V1 EN Figure 189: Through fault current from B to A: I The function shall not operate for any of the calculated currents to the protection. The minimum theoretical current setting (Imin) will be: ³...
Page 427 Section 3 1MRK504116-UUS C IED application Line 1 Fault Line 2 ANSI09000025_2_en.vsd ANSI09000025 V2 EN Figure 190: Two parallel lines. Influence from parallel line to the through fault current: I The minimum theoretical current setting (Imin) will in this case be: ³...
Page 428: Setting Parameters
Section 3 1MRK504116-UUS C IED application 3.7.3.3 Setting parameters Table 92: EFPIOC (50N) Group settings (basic) Name Values (Range) Unit Step Default Description Operation Disabled Disabled Disable/Enable Operation Enabled IBase 1 - 99999 3000 Base current Pickup 1 - 2500 Operate residual current level in % of IBase Table 93: EFPIOC (50N) Group settings (advanced)
Page 429 Section 3 1MRK504116-UUS C IED application directional function uses the polarizing quantity as decided by setting. Voltage polarizing (-3V is most commonly used, but alternatively current polarizing where currents in transformer neutrals providing the neutral (zero sequence) source (ZN) is used to polarize (IN ·...
Page 430: Setting Guidelines
Section 3 1MRK504116-UUS C IED application For some protection applications there can be a need to change the current pickup level for some time. Therefore there is a possibility to give a setting of a multiplication factor INxMult to the residual current pick-up level. This multiplication factor is activated from a binary input signal MULTPUx to the function.
Page 431 Section 3 1MRK504116-UUS C IED application Characteristx: Selection of time characteristic for step x. Definite time delay and different types of inverse time characteristics are available. Inverse time characteristic enables fast fault clearance of high current faults at the same time as selectivity to other inverse time phase overcurrent protections can be assured.
Page 432 Section 3 1MRK504116-UUS C IED application Operate time IMinx txMin Current IEC10000058-1-en.vsd IEC10000058 V1 EN Figure 191: Minimum operate current and operate time for inverse time characteristics In order to fully comply with curves definition the setting parameter txMin shall be set to the value which is equal to the operate time of the selected IEC inverse curve for measured current of twenty times the set current pickup value.
Page 433 Section 3 1MRK504116-UUS C IED application Further description can be found in the technical reference manual. tPRCrvx, tTRCrvx, tCRCrvx: Parameters for user programmable of inverse reset time characteristic curve. Further description can be found in the technical reference manual. Common settings for all steps tx: Definite time delay for step x.
Page 434 Section 3 1MRK504116-UUS C IED application Current polarizing is useful when the local source is strong and a high sensitivity is required. In such cases the polarizing voltage (3V ) can be below 1% and it is then necessary to use current polarizing or dual polarizing. Multiply the required set current (primary) with the minimum impedance (ZNpol) and check that the percentage of the phase-to-ground voltage is definitely higher than 1% (minimum 3V >VPolMin setting)
Page 435 Section 3 1MRK504116-UUS C IED application 2ndHarmStab: The rate of 2nd harmonic current content for activation of the 2nd harmonic restrain signal. The setting is given in % of the fundamental frequency residual current. HarmRestrainx: Enable block of step x from the harmonic restrain function. Parallel transformer inrush current logic In case of parallel transformers there is a risk of sympathetic inrush current.
Page 436 Section 3 1MRK504116-UUS C IED application Switch onto fault logic In case of energizing a faulty object there is a risk of having a long fault clearance time, if the fault current is too small to give fast operation of the protection. The switch on to fault function can be activated from auxiliary signals from the circuit breaker, either the close command or the open/close position (change of position).
Page 437 Section 3 1MRK504116-UUS C IED application The protected winding will feed ground-fault (residual) current to ground faults in the connected power system. The residual current fed from the transformer at external phase- to-ground faults, is highly dependent of the total positive and zero-sequence source impedances as well as the residual current distribution between the network zero- sequence impedance and the transformer zero-sequence impedance.
Page 438 Section 3 1MRK504116-UUS C IED application The transformer inrush current will have a large residual current component. To prevent unwanted function of the ground-fault overcurrent protection, the 2nd harmonic restrain blocking should be used, at least for the sensitive step 2. If the protected winding will not feed ground-fault (residual) current to ground faults in the connected power system the application is as shown in figure 195.
Page 439 Section 3 1MRK504116-UUS C IED application YN/D or YN/Y transformer Three phase CT summated Single phase- Single CT to-ground fault ANSI05000492_3_en.vsd ANSI05000492 V3 EN Figure 196: Step 1 fault calculation 1 This calculation gives the current fed to the protection: 3I 0fault1 To assure that step 1, selectivity to other ground-fault protections in the network a short delay is selected.
Page 440 Section 3 1MRK504116-UUS C IED application YN/D or YN/Y transformer Three phase CT summated Single CT Single phase- to- ground fault ANSI05000493_3_en.vsd ANSI05000493 V3 EN Figure 197: Step 1 fault calculation 1 The fault is located at the borderline between instantaneous and delayed operation of the line protection, such as Distance protection or line residual overcurrent protection.
Page 441: Setting Parameters
Section 3 1MRK504116-UUS C IED application can be chosen very low. As it is required to detect ground faults in the transformer winding, close to the neutral point, values down to the minimum setting possibilities can be chosen. However, one must consider zero-sequence currents that can occur during normal operation of the power system.
Page 442 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description StepForSOTF Step 2 Step 2 Selection of step used for SOTF Step 3 EnHarmRestSOTF Disabled Disabled Enable harmonic restrain function in SOTF Enabled tSOTF 0.000 - 60.000 0.001 0.200 Time delay for SOTF...
Page 443 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description tPCrv1 0.005 - 3.000 0.001 1.000 Parameter P for customer programmable curve for step 1 tACrv1 0.005 - 200.000 0.001 13.500 Parameter A for customer programmable curve for step 1 tBCrv1 0.00 - 20.00 0.01...
Page 444 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description tReset2 0.000 - 60.000 0.001 0.020 Reset time delay for step 2 HarmRestrain2 Disabled Enabled Enable block of step 2 from harmonic restrain Enabled tPCrv2 0.005 - 3.000 0.001 1.000 Parameter P for customer programmable...
Page 445 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description ResetTypeCrv3 Instantaneous Instantaneous Reset curve type for step 3 IEC Reset ANSI reset tReset3 0.000 - 60.000 0.001 0.020 Reset time delay for step 3 HarmRestrain3 Disabled Enabled Enable block of step 3 from harmonic restrain Enabled...
Page 446: Four Step Directional Negative Phase Sequence Overcurrent Protection Ns4Ptoc (46I2)
Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description MultPU4 1.0 - 10.0 Multiplier for scaling the current setting value for step 4 ResetTypeCrv4 Instantaneous Instantaneous Reset curve type for step 4 IEC Reset ANSI reset tReset4 0.000 - 60.000 0.001...
Page 447 Section 3 1MRK504116-UUS C IED application • Ground-fault and phase-phase short circuit protection of feeders in effectively grounded distribution and subtransmission systems. Normally these feeders have radial structure. • Back-up ground-fault and phase-phase short circuit protection of transmission lines. • Sensitive ground-fault protection of transmission lines.
Page 448: Setting Guidelines
Section 3 1MRK504116-UUS C IED application Curve name ANSI Moderately Inverse ANSI/IEEE Definite time ANSI Long Time Extremely Inverse ANSI Long Time Very Inverse ANSI Long Time Inverse IEC Normal Inverse IEC Very Inverse IEC Inverse IEC Extremely Inverse IEC Short Time Inverse IEC Long Time Inverse IEC Definite Time User Programmable...
Page 449 Section 3 1MRK504116-UUS C IED application VBase: Base voltage level in kV. This voltage is given as a phase-to-phase voltage and this is the reference for voltage related settings of the function. This voltage is internally divided by √3. When inverse time overcurrent characteristic is selected, the operate time of the stage will be the sum of the inverse time delay and the set definite time delay.
Page 450 Section 3 1MRK504116-UUS C IED application Curve name User Programmable ASEA RI RXIDG (logarithmic) The different characteristics are described in the Technical Reference Manual (TRM). Pickupx: Operation negative sequence current level for step x given in % of IBase. tx: Definite time delay for step x. Used if definite time characteristic is chosen. TDx: Time multiplier for the dependent (inverse) characteristic.
Page 451 Section 3 1MRK504116-UUS C IED application For IEC inverse time delay characteristics the possible delay time settings are instantaneous (1) and IEC (2 = set constant time reset). For the programmable inverse time delay characteristics all three types of reset time characteristics are available;...
Page 452: Setting Parameters
Section 3 1MRK504116-UUS C IED application Reverse Area AngleRCA Vpol=-V2 Forward Area Iop = I2 ANSI10000031-1-en.vsd ANSI10000031 V1 EN Figure 198: Relay characteristic angle given in degree In a transmission network a normal value of RCA is about 80°. VPolMin: Minimum polarization (reference) voltage % of VBase. I>Dir: Operate residual current level for directional comparison scheme.
Page 453 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description AngleRCA -180 - 180 Relay characteristic angle (RCA) polMethod Voltage Voltage Type of polarization Dual VPolMin 1 - 100 Minimum voltage level for polarization in % of VBase IPolMin 2 - 100...
Page 454 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description tReset1 0.000 - 60.000 0.001 0.020 Reset time delay for step 1 tPCrv1 0.005 - 3.000 0.001 1.000 Parameter P for customer programmable curve for step 1 tACrv1 0.005 - 200.000 0.001...
Page 455 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description ResetTypeCrv2 Instantaneous Instantaneous Reset curve type for step 2 IEC Reset ANSI reset tReset2 0.000 - 60.000 0.001 0.020 Reset time delay for step 2 tPCrv2 0.005 - 3.000 0.001 1.000 Parameter P for customer programmable...
Page 456 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description MultPU3 1.0 - 10.0 Multiplier for scaling the current setting value for step 3 ResetTypeCrv3 Instantaneous Instantaneous Reset curve type for step 3 IEC Reset ANSI reset tReset3 0.000 - 60.000 0.001...
Page 457: Sensitive Directional Residual Overcurrent And Power Protection Sdepsde (67N)
Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description t4Min 0.000 - 60.000 0.001 0.000 Minimum operate time in inverse curves step 4 MultPU4 1.0 - 10.0 Multiplier for scaling the current setting value for step 4 ResetTypeCrv4 Instantaneous Instantaneous...
Page 458 Section 3 1MRK504116-UUS C IED application the residual voltage (-3V ), compensated with a characteristic angle. Alternatively, the function can be set to strict 3I level with a check of angle 3I and cos φ. Directional residual power can also be used to detect and give selective trip of phase-to- ground faults in high impedance grounded networks.
Page 459: Setting Guidelines
Section 3 1MRK504116-UUS C IED application Phase currents Phase- ground voltages IEC13000013-1-en.vsd IEC13000013 V1 EN Figure 199: Connection of SDEPSDE to analog preprocessing function block Over current functionality uses true 3I0, i.e. sum of GRPxL1, GRPxL2 and GRPxL3. For 3I0 to be calculated, connection is needed to all three phase inputs. Directional and power functionality uses IN and UN.
Page 460 Section 3 1MRK504116-UUS C IED application phase × (Equation 353) EQUATION2020-ANSI V1 EN Where is the phase voltage in the fault point before the fault, phase is the resistance to ground in the fault point and is the system zero sequence impedance to ground The fault current, in the fault point, can be calculated as: ×...
Page 461 Section 3 1MRK504116-UUS C IED application × jX 3R (Equation 356) EQUATION1946 V1 EN Where is the resistance of the neutral point resistor In many systems there is also a neutral point reactor (Petersen coil) connected to one or more transformer neutral points. In such a system the impedance Z can be calculated as: 9R X X jX // 3R // j3X...
Page 462 Section 3 1MRK504116-UUS C IED application Source impedance (pos. seq) (pos. seq) (zero seq) Substation A (pos. seq) lineAB,1 (zero seq) lineAB,0 Substation B (pos. seq) lineBC,1 (zero seq) lineBC,0 Phase to ground fault en06000654_ansi.vsd ANSI06000654 V1 EN Figure 200: Equivalent of power system for calculation of setting The residual fault current can be written: phase...
Page 463 Section 3 1MRK504116-UUS C IED application × 3I (Z 3R ) T ,0 (Equation 359) EQUATION2024-ANSI V1 EN × 3I (Z T ,0 lineAB,0 (Equation 360) EQUATION2025-ANSI V1 EN The residual power, measured by the sensitive ground-fault protections in A and B will ×...
Page 464 Section 3 1MRK504116-UUS C IED application The setting IBase gives the base current in A. Normally the primary rated current of the CT feeding the protection should be chosen. The setting VBase gives the base voltage in kV. Normally the system phase to ground voltage is chosen.
Page 465 Section 3 1MRK504116-UUS C IED application RCA = -90°, ROA = 90° = ang(3I ) – ang(V en06000649_ansi.vsd ANSI06000649 V1 EN Figure 202: Characteristic for RCADir equal to -90° When OpModeSel is set to 3I03V0Cosfi the apparent residual power component in the direction is measured.
Page 466 Section 3 1MRK504116-UUS C IED application RCA = 0º ROA = 80º Operate area =-3V ANSI06000652-2-en.vsd ANSI06000652 V2 EN Figure 203: Characteristic for RCADir = 0° and ROADir = 80° DirMode is set Forward or Reverse to set the direction of the trip function from the directional residual current function.
Page 467 Section 3 1MRK504116-UUS C IED application prevent unwanted function for non-faulted feeders, with large capacitive ground-fault current contributions, due to CT phase angle error. INCosPhiPU is the operate current level for the directional function when OpModeSel is set 3I0Cosfi. The setting is given in % of IBase. The setting should be based on calculation of the active or capacitive ground-fault current at required sensitivity of the protection.
Page 468 Section 3 1MRK504116-UUS C IED application Table 99: Inverse time characteristics Curve name ANSI Extremely Inverse ANSI Very Inverse ANSI Normal Inverse ANSI Moderately Inverse ANSI/IEEE Definite time ANSI Long Time Extremely Inverse ANSI Long Time Very Inverse ANSI Long Time Inverse IEC Normal Inverse IEC Very Inverse IEC Inverse...
Page 469: Setting Parameters
Section 3 1MRK504116-UUS C IED application 3.7.6.3 Setting parameters Table 100: SDEPSDE (67N) Group settings (basic) Name Values (Range) Unit Step Default Description Operation Disabled Disabled Operation Disable / Enable Enabled OpModeSel 3I0Cosfi 3I0Cosfi Selection of operation mode for protection 3I03V0Cosfi 3I0 and fi DirMode...
Page 470 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description TimeChar ANSI Ext. inv. IEC Norm. inv. Operation curve selection for IDMT operation ANSI Very inv. ANSI Norm. inv. ANSI Mod. inv. ANSI Def. Time L.T.E. inv. L.T.V.
Page 471: Thermal Overload Protection, Two Time Constants Trpttr (49)
Section 3 1MRK504116-UUS C IED application Table 102: SDEPSDE (67N) Non group settings (basic) Name Values (Range) Unit Step Default Description IBase 1 - 99999 Base Current, in A VBase 0.05 - 2000.00 0.05 63.50 Base Voltage, in kV Phase to Neutral SBase 0.05 - 0.05...
Page 472: Setting Guideline
Section 3 1MRK504116-UUS C IED application • OA: The air is naturally circulated to the coolers without fans and the oil is naturally circulated without pumps. • FOA: The coolers have fans to force air for cooling and pumps to force the circulation of the transformer oil.
Page 473 Section 3 1MRK504116-UUS C IED application IRefMult: If a binary input ENMULT is activated the reference current value can be multiplied by the factor IRefMult. The activation could be used in case of deviating ambient temperature from the reference value. In the standard for loading of a transformer an ambient temperature of 20°C is used.
Page 474 Section 3 1MRK504116-UUS C IED application while it is deactivated at low current. The setting of the parameters below enables automatic adjustment of the time constant. Tau1High: Multiplication factor to adjust the time constant Tau1 if the current is higher than the set value IHighTau1. IHighTau1 is set in % of IBase1. Tau1Low: Multiplication factor to adjust the time constant Tau1 if the current is lower than the set value ILowTau1.
Page 475: Setting Parameters
Section 3 1MRK504116-UUS C IED application Warning: If the calculated time to trip factor is below the setting Warning a warning signal is activated. The setting is given in minutes. 3.7.7.3 Setting parameters Table 104: TRPTTR (49) Group settings (basic) Name Values (Range) Unit...
Page 476: Breaker Failure Protection Ccrbrf (50Bf)
Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description ThetaInit 0.0 - 95.0 50.0 Initial Heat content, in % of heat content trip value Warning 1.0 - 500.0 30.0 Time setting, below which warning would be set (in min) tPulse 0.01 - 0.30...
Page 477 Section 3 1MRK504116-UUS C IED application Operation: Disabled/Enabled IBase: Base current in primary A. This current is used as reference for current setting. It can be suitable to set this parameter to the rated primary current of the current transformer where the current measurement is made. FunctionMode This parameter can be set Current or Contact.
Page 478 Section 3 1MRK504116-UUS C IED application applications 1 out of 3 is sufficient. For Contact operation means back-up trip is done when circuit breaker is closed (breaker position is used). Pickup_PH: Current level for detection of breaker failure, set in % of IBase. This parameter should be set so that faults with small fault current can be detected.
Page 479 Section 3 1MRK504116-UUS C IED application It is often required that the total fault clearance time shall be less than a given critical time. This time is often dependent of the ability to maintain transient stability in case of a fault close to a power plant. Protection operate time Normal t...
Page 480: Setting Parameters
Section 3 1MRK504116-UUS C IED application tPulse: Trip pulse duration. This setting must be larger than the critical impulse time of circuit breakers to be tripped from the breaker failure protection. Typical setting is 200 3.7.8.3 Setting parameters Table 106: CCRBRF (50BF) Group settings (basic) Name Values (Range)
Page 481: Application
Section 3 1MRK504116-UUS C IED application Function description IEC 61850 IEC 60617 ANSI/IEEE C37.2 identification identification device number Pole discrepancy protection CCRPLD 52PD SYMBOL-S V1 EN 3.7.9.1 Application There is a risk that a circuit breaker will get discrepancy between the poles at circuit breaker operation: closing or opening.
Page 482: Setting Parameters
Section 3 1MRK504116-UUS C IED application IBase: Base current in primary A. This current is used as reference for current setting. It can be suitable to set this parameter to the rated primary current of the protected object where the current measurement is made. tTrip: Time delay of the operation.
Page 483: Directional Underpower Protection Guppdup (37)
Section 3 1MRK504116-UUS C IED application 3.7.10 Directional underpower protection GUPPDUP (37) Function description IEC 61850 IEC 60617 ANSI/IEEE C37.2 identification identification device number Directional underpower protection GUPPDUP P < SYMBOL-LL V1 EN 3.7.10.1 Application The task of a generator in a power plant is to convert mechanical energy available as a torque on a rotating shaft to electric energy.
Page 484 Section 3 1MRK504116-UUS C IED application blades. When a steam turbine rotates without steam supply, the electric power consumption will be about 2% of rated power. Even if the turbine rotates in vacuum, it will soon become overheated and damaged. The turbine overheats within minutes if the turbine loses the vacuum.
Page 485: Setting Guidelines
Section 3 1MRK504116-UUS C IED application Underpower protection Overpower protection Operate Operate Line Line Margin Margin Operating point Operating point without without turbine torque turbine torque IEC09000019-2-en.vsd IEC09000019 V2 EN Figure 205: Reverse power protection with underpower or overpower protection 3.7.10.2 Setting guidelines Operation: With the parameter Operation the function can be set Enabled/Disabled.
Page 486 Section 3 1MRK504116-UUS C IED application Mode Set value Formula used for complex power calculation × (Equation 374) EQUATION2058-ANSI V1 EN × (Equation 375) EQUATION2059-ANSI V1 EN × (Equation 376) EQUATION2060-ANSI V1 EN = × × (Equation 377) EQUATION2061-ANSI V1 EN = ×...
Page 487 Section 3 1MRK504116-UUS C IED application Power1(2) Angle1(2) Operate en06000441.vsd IEC06000441 V1 EN Figure 206: Underpower mode The setting Power1(2) gives the power component pick up value in the Angle1(2) direction. The setting is given in p.u. of the generator rated power, see equation 380. Minimum recommended setting is 0.2% of S when metering class CT inputs into the IED are used.
Page 488 Section 3 1MRK504116-UUS C IED application Operate ° Angle1(2) = 0 Power1(2) en06000556.vsd IEC06000556 V1 EN Figure 207: For low forward power the set angle should be 0° in the underpower function TripDelay1(2) is set in seconds to give the time delay for trip of the stage after pick up. Hysteresis1(2) is given in p.u.
Page 489: Setting Parameters
Section 3 1MRK504116-UUS C IED application The value of k=0.92 is recommended in generator applications as the trip delay is normally quite long. The calibration factors for current and voltage measurement errors are set % of rated current/voltage: IMagComp5, IMagComp30, IMagComp100 VMagComp5, VMagComp30, VMagComp100 IMagComp5, IMagComp30, IMagComp100 The angle compensation is given as difference between current and voltage angle errors.
Page 490: Directional Overpower Protection Goppdop (32)
Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description IMagComp5 -10.000 - 10.000 0.001 0.000 Magnitude factor to calibrate current at 5% of IMagComp30 -10.000 - 10.000 0.001 0.000 Magnitude factor to calibrate current at 30% of In IMagComp100 -10.000 - 10.000...
Page 491: Application
Section 3 1MRK504116-UUS C IED application 3.7.11.1 Application The task of a generator in a power plant is to convert mechanical energy available as a torque on a rotating shaft to electric energy. Sometimes, the mechanical power from a prime mover may decrease so much that it does not cover bearing losses and ventilation losses.
Page 492 Section 3 1MRK504116-UUS C IED application Power to the power plant auxiliaries may come from a station service transformer connected to the primary side of the step-up transformer. Power may also come from a start-up service transformer connected to the external network. One has to design the reverse power protection so that it can detect reverse power independent of the flow of power to the power plant auxiliaries.
Page 493: Setting Guidelines
Section 3 1MRK504116-UUS C IED application Underpower IED Overpower IED Operate Operate Line Line Margin Margin Operating point Operating point without without turbine torque turbine torque IEC06000315-2-en.vsd IEC06000315 V2 EN Figure 208: Reverse power protection with underpower IED and overpower IED 3.7.11.2 Setting guidelines Operation: With the parameter Operation the function can be set Enabled/Disabled.
Page 494 Section 3 1MRK504116-UUS C IED application Mode Set value Formula used for complex power calculation × (Equation 387) EQUATION2041 V1 EN × (Equation 388) EQUATION2042 V1 EN × (Equation 389) EQUATION2043 V1 EN = × × S 3 V (Equation 390) EQUATION2044 V1 EN = ×...
Page 495 Section 3 1MRK504116-UUS C IED application Operate Power1(2) Angle1(2) en06000440.vsd IEC06000440 V1 EN Figure 209: Overpower mode The setting Power1(2) gives the power component pick up value in the Angle1(2) direction. The setting is given in p.u. of the generator rated power, see equation 393. Minimum recommended setting is 0.2% of S when metering class CT inputs into the IED are used.
Page 496 Section 3 1MRK504116-UUS C IED application Angle1(2 ) = 180 Operate Power 1(2) IEC06000557-2-en.vsd IEC06000557 V2 EN Figure 210: For reverse power the set angle should be 180° in the overpower function TripDelay1(2) is set in seconds to give the time delay for trip of the stage after pick up. Hysteresis1(2) is given in p.u.
Page 497: Setting Parameters
Section 3 1MRK504116-UUS C IED application S TD S TD S ⋅ − ⋅ Calculated (Equation 395) EQUATION1893-ANSI V1 EN Where is a new measured value to be used for the protection function is the measured value given from the function in previous execution cycle is the new calculated value in the present execution cycle Calculated is settable parameter...
Page 498 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description Angle2 -180.0 - 180.0 Angle for stage 2 TripDelay2 0.010 - 6000.000 0.001 1.000 Trip delay for stage 2 DropDelay2 0.010 - 6000.000 0.001 0.060 Drop delay for stage 2 Table 115: GOPPDOP (32) Group settings (advanced) Name...
Page 499: Broken Conductor Check Brcptoc (46)
Section 3 1MRK504116-UUS C IED application 3.7.12 Broken conductor check BRCPTOC (46) Function description IEC 61850 IEC 60617 ANSI/IEEE C37.2 identification identification device number Broken conductor check BRCPTOC 3.7.12.1 Application Conventional protection functions can not detect the broken conductor condition. Broken conductor check (BRCPTOC, 46) function, consisting of continuous current unsymmetrical check on the line where the IED connected will give alarm or trip at detecting broken conductors.
Page 500: Setting Parameters
Section 3 1MRK504116-UUS C IED application 3.7.12.3 Setting parameters Table 117: BRCPTOC (46) Group settings (basic) Name Values (Range) Unit Step Default Description Operation Disabled Disabled Operation Disable / Enable Enabled IBase 0 - 99999 3000 IBase Pickup_ub 50 - 90 Unbalance current operation value in percent of max current Pickup_PH...
Page 501 Section 3 1MRK504116-UUS C IED application insulated from the other by insulators because the can casing within each rack are at a certain potential. Refer figure for an example: Rack Capacitor Unit (Can) IEC09000753_1_en.vsd IEC09000753 V1 EN Figure 211: Replacement of a faulty capacitor unit within SCB There are four types of the capacitor unit fusing designs which are used for construction of SCBs: Externally...
Page 502 Section 3 1MRK504116-UUS C IED application Which type of fusing is used may depend on can manufacturer or utility preference and previous experience. Because the SCBs are built from the individual capacitor units the overall connections may vary. Typically used SCB configurations are: Delta-connected banks (generally used only at distribution voltages) Single wye-connected banks Double wye-connected banks...
Page 503 Section 3 1MRK504116-UUS C IED application capable of continuous operation under contingency system and bank conditions, provided the following limitations are not exceeded: Capacitor units should be capable of continuous operation including harmonics, but excluding transients, to 110% of rated IED root-mean-square (RMS) voltage and a crest voltage not exceeding of rated RMS voltage.
Page 504: Setting Guidelines
Section 3 1MRK504116-UUS C IED application Undercurrent protection for SCB Reconnection inhibit protection for SCB Restrike condition detection CBPGAPC function can be used to provide the last four types of protection mentioned in the above list. 3.7.13.2 Setting guidelines This setting example will be done for application as shown in figure 212: 400kV Preprocessing Capacitor bank...
Page 505 Section 3 1MRK504116-UUS C IED application 0.578 _ ec 500 1 (Equation 397) IEC09000756 V1 EN Note that the SCB rated current on the secondary CT side is important for secondary injection of the function. The parameters for the Capacitor bank protection function CBPGAPC are set via the local HMI or PCM600.
Page 506 Section 3 1MRK504116-UUS C IED application Undercurrent feature is blocked by operation of Reconnection inhibit feature. Reactive power overload feature: Operation QOL =Enabled; to enable this feature UP_QOL =130% (of SCB MVAr rating); Reactive power level required for pickup. Selected value gives pickup recommended by international standards. tQOL =60s;...
Page 507: Setting Parameters
Section 3 1MRK504116-UUS C IED application Therefore simple logic can be created in the Application Configuration tool to detect such CB behavior. Such CB condition can be just alarmed, and if required, the built in disturbance recorder can also be triggered. To create this logic, a binary signal that the CB is going to be opened (but not trip command) shall be made available to the IED.
Page 508: Negativ Sequence Time Overcurrent Protection For Machines Ns2Ptoc (46I2)
Section 3 1MRK504116-UUS C IED application 3.7.14 Negativ sequence time overcurrent protection for machines NS2PTOC (46I2) Function description IEC 61850 IEC 60617 ANSI/IEEE C37.2 identification identification device number Negative sequence time overcurrent NS2PTOC 2I2> 46I2 protection for machines 3.7.14.1 Application Negative sequence overcurrent protection for machines NS2PTOC (46I2) is intended primarily for the protection of generators against possible overheating of the rotor caused by negative sequence component in the stator current.
Page 509 Section 3 1MRK504116-UUS C IED application A separate output is available as an alarm feature to warn the operator of a potentially dangerous situation. Features Negative-sequence time overcurrent protection NS2PTOC (46I2) is designed to provide a reliable protection for generators of all types and sizes against the effect of unbalanced system conditions.
Page 510 Section 3 1MRK504116-UUS C IED application Table 120: ANSI requirements for unbalanced faults on synchronous machines Types of Synchronous Machine Permissible Salient pole generator Synchronous condenser Cylindrical rotor generators: Indirectly cooled Directly cooled (0 – 800 MVA) Directly cooled (801 – 1600 MVA) See Figure shows a graphical representation of the relationship between generator capability and generator MVA rating for directly cooled (conductor cooled) generators.
Page 511: Setting Guidelines
Section 3 1MRK504116-UUS C IED application Table 121: Continous I capability Type of generator Permissible I (in percent of rated generator current) Salient Pole: with damper winding without damper winding Cylindrical Rotor Indirectly cooled Directly cooled to 960 MVA 961 to 1200 MVA 1201 to 1500 MVA As it is described in the table above that the continuous negative sequence current capability of the generator is in range of 5% to 10% of the rated generator current.
Page 512 Section 3 1MRK504116-UUS C IED application definite time delay. Thus, if only the inverse time delay is required, it is of utmost importance to set the definite time delay for that stage to zero. Operate time characteristic Negative sequence time overcurrent protection for machines NS2PTOC (46I2) provides two operating time delay characteristics for step 1: •...
Page 513 Section 3 1MRK504116-UUS C IED application Negative sequence inverse time characteristic 10000 tMax 1000 tMin 0.01 Negative sequence current IEC08000355-2-en.vsd IEC08000355 V2 EN Figure 214: Inverse Time Delay characteristic The example in figure indicates that the protection function has a set minimum trip time t1Min of 5 sec.
Page 514: Setting Parameters
Section 3 1MRK504116-UUS C IED application 3.7.14.3 Setting parameters Table 122: NS2PTOC (46I2) Group settings (basic) Name Values (Range) Unit Step Default Description Operation Disabled Disabled Disable/Enable Operation Enabled IBase 1 - 99999 3000 Rated generator current in primary amps tAlarm 0.00 - 6000.00 0.01...
Page 515: Voltage Protection
Section 3 1MRK504116-UUS C IED application Voltage protection 3.8.1 Two step undervoltage protection UV2PTUV (27) Function description IEC 61850 IEC 60617 ANSI/IEEE C37.2 identification identification device number Two step undervoltage protection UV2PTUV 3U< SYMBOL-R-2U-GREATER-THAN V2 EN 3.8.1.1 Application Two-step undervoltage protection function (UV2PTUV ,27) is applicable in all situations, where reliable detection of low phase voltages is necessary.
Page 516: Setting Guidelines
Section 3 1MRK504116-UUS C IED application cases, it is a useful function in circuits for local or remote automation processes in the power system. 3.8.1.2 Setting guidelines All the voltage conditions in the system where UV2PTUV (27) performs its functions should be considered.
Page 517 Section 3 1MRK504116-UUS C IED application ConnType: Sets whether the measurement shall be phase-to-ground fundamental value, phase-to-phase fundamental value, phase-to-ground RMS value or phase-to-phase RMS value. Operation: Disabled or Enabled. VBase: Base voltage phase-to-phase in primary kV. This voltage is used as reference for voltage setting.
Page 518 Section 3 1MRK504116-UUS C IED application tn: time delay of step n, given in s. This setting is dependent of the protection application. In many applications the protection function shall not directly trip when there is a short circuit or ground faults in the system. The time delay must be coordinated to the short circuit protections.
Page 519: Setting Parameters
Section 3 1MRK504116-UUS C IED application tBlkUVn: Time delay to block the undervoltage step n when the voltage level is below IntBlkStValn, given in s. It is important that this delay is shorter than the operate time delay of the undervoltage protection step. 3.8.1.3 Setting parameters Table 123:...
Page 520 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description 0.000 - 60.000 0.001 5.000 Definitive time delay of step 2 t2Min 0.000 - 60.000 0.001 5.000 Minimum operate time for inverse curves for step 2 0.05 - 1.10 0.01 0.05 Time multiplier for the inverse time delay for...
Page 521: Two Step Overvoltage Protection Ov2Ptov (59)
Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description BCrv2 0.50 - 100.00 0.01 1.00 Parameter B for customer programmable curve for step 2 CCrv2 0.0 - 1.0 Parameter C for customer programmable curve for step 2 DCrv2 0.000 - 60.000 0.001...
Page 522: Setting Guidelines
Section 3 1MRK504116-UUS C IED application thereby decreasing the voltage. The function has a high measuring accuracy and hysteresis setting to allow applications to control reactive load. OV2PTOV (59) is used to disconnect apparatuses, like electric motors, which will be damaged when subject to service under high voltage conditions.
Page 523 Section 3 1MRK504116-UUS C IED application The hysteresis is for overvoltage functions very important to prevent that a transient voltage over set level is not “sealed-in” due to a high hysteresis. Typical values should be ≤ 0.5%. Equipment protection, such as for motors, generators, reactors and transformers High voltage will cause overexcitation of the core and deteriorate the winding insulation.
Page 524 Section 3 1MRK504116-UUS C IED application > × VBase kV ) / 3 (Equation 401) EQUATION1713 V2 EN and operation for phase-to-phase voltage over: > × Vpickup (%) VBase(kV) (Equation 402) EQUATION1992-ANSI V1 EN The below described setting parameters are identical for the two steps (n = 1 or 2). Therefore the setting parameters are described only once.
Page 525: Setting Parameters
Section 3 1MRK504116-UUS C IED application tIResetn: Reset time for step n if inverse time delay is used, given in s. The default value is 25 ms. TDn: Time multiplier for inverse time characteristic. This parameter is used for co- ordination between different inverse time delayed undervoltage protections.
Page 526 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description 0.00 - 6000.00 0.01 5.00 Definitive time delay of step 1 t1Min 0.000 - 60.000 0.001 5.000 Minimum operate time for inverse curves for step 1 0.05 - 1.10 0.01 0.05 Time multiplier for the inverse time delay for...
Page 527: Two Step Residual Overvoltage Protection Rov2Ptov (59N)
Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description CrvSat1 0 - 100 Tuning param for programmable over voltage TOV curve, step 1 tReset2 0.000 - 60.000 0.001 0.025 Reset time delay used in IEC Definite Time curve step 2 ResetTypeCrv2 Instantaneous...
Page 528: Setting Guidelines
Section 3 1MRK504116-UUS C IED application ground fault related functions, the residual overvoltage signal can be used as a release signal. The residual voltage can be measured either at the transformer neutral or from a voltage transformer open delta connection. The residual voltage can also be calculated internally, based on measurement of the three-phase voltages.
Page 529 Section 3 1MRK504116-UUS C IED application Equipment protection, capacitors High voltage will deteriorate the dielectric and the insulation. Two step residual overvoltage protection (ROV2PTOV, 59N) has to be connected to a neutral or open delta winding. The setting must be above the highest occurring "normal" residual voltage and below the highest acceptable residual voltage for the capacitor.
Page 530 Section 3 1MRK504116-UUS C IED application ANSI07000190-1-en.vsd ANSI07000190 V1 EN Figure 215: Ground fault in Non-effectively grounded systems Direct grounded system In direct grounded systems, an ground fault on one phase indicates a voltage collapse in that phase. The two healthy phases will have normal phase-to-ground voltages. The residual sum will have the same value as the remaining phase-to-ground voltage.
Page 531 Section 3 1MRK504116-UUS C IED application ANSI07000189-1-en.vsd ANSI07000189 V1 EN Figure 216: Ground fault in Direct grounded system Settings for Two step residual overvoltage protection Operation: Disabled or Enabled VBase is used as voltage reference for the voltage. The voltage can be fed to the IED in different ways: The IED is fed from a normal voltage transformer group where the residual voltage is calculated internally from the phase-to-ground voltages within the...
Page 532 Section 3 1MRK504116-UUS C IED application The below described setting parameters are identical for the two steps (n = step 1 and 2). Therefore the setting parameters are described only once. Characteristicn: Selected inverse time characteristic for step n. This parameter gives the type of time delay to be used.
Page 533: Setting Parameters
Section 3 1MRK504116-UUS C IED application ACrvn, BCrvn, CCrvn, DCrvn, PCrvn: Parameters for step n, to set to create programmable undervoltage inverse time characteristic. Description of this can be found in the technical reference manual. CrvSatn: Set tuning parameter for step n. When the denominator in the expression of the programmable curve is equal to zero the time delay will be infinity.
Page 534 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description Characterist2 Definite time Definite time Selection of time delay curve type for step 2 Inverse curve A Inverse curve B Inverse curve C Prog. inv. curve Pickup2 1 - 100 Voltage setting/pickup value (DT &...
Page 535: Overexcitation Protection Oexpvph (24)
Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description CCrv2 0.0 - 1.0 Parameter C for customer programmable curve for step 2 DCrv2 0.000 - 60.000 0.001 0.000 Parameter D for customer programmable curve for step 2 PCrv2 0.000 - 3.000 0.001...
Page 536 Section 3 1MRK504116-UUS C IED application capable of operating continuously at an applied voltage 110% of rated value at no load, reduced to 105% at rated secondary load current. According to ANSI/IEEE standards, the transformers shall be capable of delivering rated load current continuously at an output voltage of 105% of rated value (at rated frequency) and operate continuously with output voltage equal to 110% of rated value at no load.
Page 537: Setting Guidelines
Section 3 1MRK504116-UUS C IED application Some different connection alternatives are shown in figure 217. en05000208_ansi.vsd ANSI05000208 V1 EN Figure 217: Alternative connections of an Overexcitation protection OEXPVPH (24) (Volt/Hertz) 3.8.4.2 Setting guidelines Recommendations for input and output signals Recommendations for Input signals Please see the default factory configuration.
Page 538 Section 3 1MRK504116-UUS C IED application BFI: The BFI output indicates that the level Pickup1> has been reached. It can be used to initiate time measurement. TRIP: The TRIP output is activated after the operate time for the V/f level has expired. TRIP signal is used to trip the circuit breaker(s).
Page 539 Section 3 1MRK504116-UUS C IED application CurveType: Selection of the curve type for the inverse delay. The IEEE curves or tailor made curve can be selected depending of which one matches the capability curve best. TDforIEEECurve: The time constant for the inverse characteristic. Select the one giving the best match to the transformer capability.
Page 540 Section 3 1MRK504116-UUS C IED application When the overexcitation is equal to the set value of Pickup2, tripping is obtained after a time equal to the setting of t6. A suitable setting would be Pickup2 = 140% and t6 = 4 s.
Page 541: Setting Parameters
Section 3 1MRK504116-UUS C IED application V/Hz transformer capability curve relay operate characteristic Continous 0.05 Time (minutes) en01000377.vsd IEC01000377 V1 EN Figure 218: Example on overexcitation capability curve and V/Hz protection settings for power transformer 3.8.4.3 Setting parameters Table 132: OEXPVPH (24) Group settings (basic) Name Values (Range)
Page 542: Voltage Differential Protection Vdcptov (60)
Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description t_MaxTripDelay 0.00 - 9000.00 0.01 1800.00 Maximum trip delay for V/Hz inverse curve, in t_CoolingK 0.10 - 9000.00 0.01 1200.00 Transformer magnetic core cooling time constant, in sec CurveType IEEE IEEE...
Page 543: Application
Section 3 1MRK504116-UUS C IED application 3.8.5.1 Application The Voltage differential protection VDCPTOV (60) functions can be used in some different applications. • Voltage unbalance protection for capacitor banks. The voltage on the bus is supervised with the voltage in the capacitor bank, phase- by phase. Difference indicates a fault, either short-circuited or open element in the capacitor bank.
Page 544: Setting Guidelines
Section 3 1MRK504116-UUS C IED application Fuse failure supervision (SDDRFUF) function for voltage transformers. In many application the voltages of two fuse groups of the same voltage transformer or fuse groups of two separate voltage transformers measuring the same voltage can be supervised with this function.
Page 545 Section 3 1MRK504116-UUS C IED application RFLx: Is the setting of the voltage ratio compensation factor where possible differences between the voltages is compensated for. The differences can be due to different voltage transformer ratios, different voltage levels e.g. the voltage measurement inside the capacitor bank can have a different voltage level but the difference can also e.g.
Page 546: Setting Parameters
Section 3 1MRK504116-UUS C IED application tAlarm: The time delay for alarm is set by this parameter. Normally, few seconds delay can be used on capacitor banks alarm. For fuse failure supervision (SDDRFUF) the alarm delay can be set to zero. 3.8.5.3 Setting parameters Table 135:...
Page 547: Application
Section 3 1MRK504116-UUS C IED application 3.8.6.1 Application The trip of the circuit breaker at a prolonged loss of voltage at all the three phases is normally used in automatic restoration systems to facilitate the system restoration after a major blackout. Loss of voltage check (LOVPTUV, 27) generates a TRIP signal only if the voltage in all the three phases is low for more than the set time.
Page 548: Frequency Protection
Section 3 1MRK504116-UUS C IED application Table 138: LOVPTUV (27) Group settings (advanced) Name Values (Range) Unit Step Default Description tPulse 0.050 - 60.000 0.001 0.150 Duration of TRIP pulse tBlock 0.000 - 60.000 0.001 5.000 Time delay to block when all 3ph voltages are not low tRestore 0.000 - 60.000...
Page 549: Setting Guidelines
Section 3 1MRK504116-UUS C IED application 3.9.1.2 Setting guidelines All the frequency and voltage magnitude conditions in the system where SAPTUF (81) performs its functions should be considered. The same also applies to the associated equipment, its frequency and time characteristic. There are especially two specific application areas for SAPTUF (81): to protect equipment against damage due to low frequency, such as generators, transformers, and motors.
Page 550: Setting Parameters
Section 3 1MRK504116-UUS C IED application Power system protection, by load shedding The setting has to be well below the lowest occurring "normal" frequency and well above the lowest acceptable frequency for power stations, or sensitive loads. The setting level, the number of levels and the distance between two levels (in time and/or in frequency) depends very much on the characteristics of the power system under consideration.
Page 551: Overfrequency Protection Saptof (81)
Section 3 1MRK504116-UUS C IED application 3.9.2 Overfrequency protection SAPTOF (81) Function description IEC 61850 IEC 60617 ANSI/IEEE C37.2 identification identification device number Overfrequency protection SAPTOF f > SYMBOL-O V1 EN 3.9.2.1 Application Overfrequency protection function SAPTOF (81) is applicable in all situations, where reliable detection of high fundamental power system frequency is needed.
Page 552: Setting Parameters
Section 3 1MRK504116-UUS C IED application Equipment protection, such as for motors and generators The setting has to be well above the highest occurring "normal" frequency and well below the highest acceptable frequency for the equipment. Power system protection, by generator shedding The setting must be above the highest occurring "normal"...
Page 553: Rate-Of-Change Frequency Protection Sapfrc (81)
Section 3 1MRK504116-UUS C IED application 3.9.3 Rate-of-change frequency protection SAPFRC (81) Function description IEC 61850 IEC 60617 ANSI/IEEE C37.2 identification identification device number Rate-of-change frequency protection SAPFRC df/dt > < SYMBOL-N V1 EN 3.9.3.1 Application Rate-of-change frequency protection (SAPFRC, 81), is applicable in all situations, where reliable detection of change of the fundamental power system voltage frequency is needed.
Page 554: Setting Parameters
Section 3 1MRK504116-UUS C IED application place very quickly, and there might not be enough time to wait until the frequency signal has reached an abnormal value. Actions are therefore taken at a frequency level closer to the primary nominal level, if the rate-of-change frequency is large (with respect to sign).
Page 555: Multipurpose Protection
Section 3 1MRK504116-UUS C IED application 3.10 Multipurpose protection 3.10.1 General current and voltage protection CVGAPC Function description IEC 61850 IEC 60617 ANSI/IEEE C37.2 identification identification device number General current and voltage protection CVGAPC 3.10.1.1 Application A breakdown of the insulation between phase conductors or a phase conductor and ground results in a short circuit or a ground fault.
Page 556 Section 3 1MRK504116-UUS C IED application or Reverse). Its behavior during low-level polarizing voltage is settable (Non- Directional,Block,Memory) • Voltage restrained/controlled feature is available in order to modify the pick- up level of the overcurrent stage(s) in proportion to the magnitude of the measured voltage •...
Page 557 Section 3 1MRK504116-UUS C IED application Set value for parameter Comment "CurrentInput” PosSeq CVGAPC function will measure internally calculated positive sequence current phasor NegSeq CVGAPC function will measure internally calculated negative sequence current phasor 3 · ZeroSeq CVGAPC function will measure internally calculated zero sequence current phasor multiplied by factor 3 MaxPh CVGAPC function will measure current phasor of the phase with...
Page 558 Section 3 1MRK504116-UUS C IED application Set value for parameter Comment "VoltageInput" -NegSeq CVGAPC function will measure internally calculated negative sequence voltage phasor. This voltage phasor will be intentionally rotated for 180° in order to enable easier settings for the directional feature when used.
Page 559 Section 3 1MRK504116-UUS C IED application Base quantities for CVGAPC function The parameter settings for the base quantities, which represent the base (100%) for pickup levels of all measuring stages shall be entered as setting parameters for every CVGAPC function. Base current shall be entered as: rated phase current of the protected object in primary amperes, when the measured Current Quantity is selected from 1 to 9, as shown in table 142.
Page 560 Section 3 1MRK504116-UUS C IED application • Turn-to-Turn & Differential Backup protection (directional Negative Sequence. Overcurrent protection connected to generator HV terminal CTs looking into generator) (67Q) • Stator Overload protection (49S) • Rotor Overload protection (49R) • Loss of Excitation protection (directional pos. seq. OC protection) (40) •...
Page 561: Setting Guidelines
Section 3 1MRK504116-UUS C IED application For big and important machines, fast protection against inadvertent energizing should, therefore, be included in the protective scheme. The protection against inadvertent energization can be made by a combination of undervoltage, overvoltage and overcurrent protection functions. The undervoltage function will, with a delay for example 10 s, detect the situation when the generator is not connected to the grid (standstill) and activate the overcurrent function.
Page 562 Section 3 1MRK504116-UUS C IED application This functionality can be achieved by using one CVGAPC function. The following shall be done to ensure proper operation of the function: Connect three-phase power line currents and three-phase power line voltages to one CVGAPC instance (for example, GF04) Set CurrentInput to NegSeq (please note that CVGAPC function measures I2 current and NOT 3I2 current;...
Page 563 Section 3 1MRK504116-UUS C IED application • the set values for RCADir and ROADir settings will be as well applicable for OC2 stage • setting DirMode_OC2 shall be set to Reverse • setting parameter PickupCurr_OC2 shall be made more sensitive than pickup value of forward OC1 element (that is, typically 60% of OC1 set pickup level) in order to insure proper operation of the directional comparison scheme during current reversal situations...
Page 564 Section 3 1MRK504116-UUS C IED application 0.07 (Equation 407) EQUATION1756-ANSI V1 EN Equation can be re-written in the following way without changing the value for the operate time of the negative sequence inverse overcurrent IED: × æ ö ç ÷ ×...
Page 565 Section 3 1MRK504116-UUS C IED application then the OC1 step of the CVGAPC function can be used for generator negative sequence inverse overcurrent protection. For this particular example the following settings shall be entered to insure proper function operation: select negative sequence current as measuring quantity for this CVGAPC function make sure that the base current value for the CVGAPC function is equal to the generator rated current set TD_OC1 = 20...
Page 566 Section 3 1MRK504116-UUS C IED application This formula is applicable only when measured current (for example, positive sequence current) exceeds a pre-set value (typically in the range from 105 to 125% of the generator rated current). By defining parameter x equal to the per unit value for the desired pickup for the overload IED in accordance with the following formula: 116% 1.16...
Page 567 Section 3 1MRK504116-UUS C IED application When the equation is compared with the equation for the inverse time characteristic of the OC1 step in it is obvious that if the following rules are followed: set TD equal to the IEC or ANSI standard generator capability value set parameter A_OC1 equal to the value 1/x2 set parameter C_OC1 equal to the value 1/x2 set parameters B_OC1 = 0.0 and P_OC1=2.0...
Page 568 Section 3 1MRK504116-UUS C IED application Connect three-phase currents from the protected object to one CVGAPC instance (for example, GF03) Set CurrentInput to value UnbalancePh Set EnRestrainCurr to On Set RestrCurrInput to MaxPh Set RestrCurrCoeff to value 0.97 Set base current value to the rated current of the protected object in primary amperes Enable one overcurrent step (for example, OC1) Select parameter CurveType_OC1 to value IEC Def.
Page 569 Section 3 1MRK504116-UUS C IED application Select CurveType_OC1 to value ANSI Very inv If required set minimum operating time for this curve by using parameter tMin_OC1 (default value 0.05s) Set PickupCurr_OC1 to value 185% 10. Set VCntrlMode_OC1 to On 11. Set VDepMode_OC1 to Slope 12.
Page 570 Section 3 1MRK504116-UUS C IED application Proper operation of the CVGAPC function made in this way can easily be verified by secondary injection. All other settings can be left at the default values. However it shall be noted that set values for RCA & ROA angles will be applicable for OC2 step if directional feature is enabled for this step as well.
Page 571: Setting Parameters
Section 3 1MRK504116-UUS C IED application 3.10.1.3 Setting parameters Table 144: CVGAPC Group settings (basic) Name Values (Range) Unit Step Default Description Operation Disabled Disabled Disable/Enable Operation Enabled CurrentInput Phase A MaxPh Select current signal which will be measured Phase B inside function Phase C PosSeq...
Page 572 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description LowVolt_VM 0.0 - 5.0 Below this level in % of Vbase setting ActLowVolt takes over Operation_OC1 Disabled Disabled Disable/Enable Operation of OC1 Enabled PickupCurr_OC1 2.0 - 5000.0 120.0 Pickup current for OC1 in % of Ibase CurveType_OC1...
Page 573 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description Operation_OC2 Disabled Disabled Disable/Enable Operation od OC2 Enabled PickupCurr_OC2 2.0 - 5000.0 120.0 Pickup current for OC2 in % of Ibase CurveType_OC2 ANSI Ext. inv. ANSI Def. Time Selection of time delay curve type for OC2 ANSI Very inv.
Page 574 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description Operation_UC1 Disabled Disabled Disable/Enable operation of UC1 Enabled EnBlkLowI_UC1 Disabled Disabled Enable internal low current level blocking for Enabled BlkLowCurr_UC1 0 - 150 Internal low current blocking level for UC1 in % of Ibase PickupCurr_UC1 2.0 - 150.0...
Page 575 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description tDef_OV2 0.00 - 6000.00 0.01 1.00 Operate time delay in sec for definite time use of OV2 tMin_OV2 0.00 - 6000.00 0.01 0.05 Minimum operate time for Inverse-Time curves for OV2 TD_OV2 0.05 - 999.00...
Page 576 Section 3 1MRK504116-UUS C IED application Table 145: CVGAPC Group settings (advanced) Name Values (Range) Unit Step Default Description MultPU_OC1 1.0 - 10.0 Multiplier for scaling the current setting value for OC1 ResCrvType_OC1 Instantaneous Instantaneous Selection of reset curve type for OC1 IEC Reset ANSI reset tResetDef_OC1...
Page 577 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description ResCrvType_OV1 Instantaneous Instantaneous Selection of reset curve type for OV1 Frozen timer Linearly decreased tResetDef_OV1 0.00 - 6000.00 0.01 0.00 Reset time delay in sec for definite time use of OV1 tResetIDMT_OV1 0.00 - 6000.00...
Page 578: Secondary System Supervision
Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description C_UV1 0.000 - 1.000 0.001 1.000 Parameter C for customer programmable curve for UV1 D_UV1 0.000 - 10.000 0.001 0.000 Parameter D for customer programmable curve for UV1 P_UV1 0.001 - 10.000 0.001...
Page 579: Setting Guidelines
Section 3 1MRK504116-UUS C IED application In case of large currents, unequal transient saturation of CT cores with different remanence or different saturation factor may result in differences in the secondary currents from the two CT sets. Unwanted blocking of protection functions during the transient stage must then be avoided.
Page 580: Fuse Failure Supervision Sddrfuf
Section 3 1MRK504116-UUS C IED application Table 147: CCSRDIF (87) Group settings (advanced) Name Values (Range) Unit Step Default Description Pickup_Block 5 - 500 Block of the function at high phase current, in % of IBase 3.11.2 Fuse failure supervision SDDRFUF Function description IEC 61850 IEC 60617...
Page 581: Setting Guidelines
Section 3 1MRK504116-UUS C IED application where the line can have a weak-infeed of zero sequence current this function shall be avoided. A criterion based on delta current and delta voltage measurements can be added to the fuse failure supervision function in order to detect a three phase fuse failure. This is beneficial for example during three phase transformer switching.
Page 582 Section 3 1MRK504116-UUS C IED application UZsIZs for zero sequence based algorithm. If system studies or field experiences shows that there is a risk that the fuse failure function will not be activated due to the system conditions, the dependability of the fuse failure function can be increased if the OpModeSel is set to UZsIZs OR UNsINs or OptimZsNs.
Page 583 Section 3 1MRK504116-UUS C IED application Zero sequence based The IED setting value 3V0PU is given in percentage of the base voltage VBase, where VBase is the primary base voltage, normally the rated voltage of the primary potential voltage transformer winding. The setting of 3V0PU should not be set lower than according to equation 416.
Page 584: Setting Parameters
Section 3 1MRK504116-UUS C IED application VSetprim × DVPU VBase (Equation 418) EQUATION1765-ANSI V1 EN ISetprim DIPU × IBase (Equation 419) ANSIEQUATION2385 V1 EN The voltage thresholds VPPU is used to identify low voltage condition in the system. Set VPPU below the minimum operating voltage that might occur during emergency conditions.
Page 585: Control
Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description 3I0PU 1 - 100 Pickup of residual undercurrent element in % of IBase 3V2PU 1 - 100 Pickup of negative sequence overvoltage element in % of VBase 3I2PU 1 - 100 Pickup of negative sequence undercurrent...
Page 586: Application
Section 3 1MRK504116-UUS C IED application 3.12.1.1 Application Synchronizing To allow closing of breakers between asynchronous networks a synchronizing function is provided. The breaker close command is issued at the optimum time when conditions across the breaker are satisfied in order to avoid stress on the network and its components.
Page 587 Section 3 1MRK504116-UUS C IED application Synchronism check The main purpose of the synchronism check function is to provide control over the closing of circuit breakers in power networks in order to prevent closing if conditions for synchronism are not detected. It is also used to prevent the re-connection of two systems, which are divided after islanding and after a three pole reclosing.
Page 588 Section 3 1MRK504116-UUS C IED application bigger phase angle difference can be allowed as this is sometimes the case in a long and loaded parallel power line. For this application we accept a synchronism check with a long operation time and high sensitivity regarding the frequency difference. The phase angle difference setting can be set for steady state conditions.
Page 589 Section 3 1MRK504116-UUS C IED application The energizing check function measures the bus and line voltages and compares them to both high and low threshold values. The output is given only when the actual measured conditions match the set conditions. Figure shows two substations, where one (1) is energized and the other (2) is not energized.
Page 590 (B16I). If the PSTO input is used, connected to the Local-Remote switch on the local HMI, the choice can also be from the station HMI system, typically ABB Microscada through IEC 61850–8–1 communication. The connection example for selection of the manual energizing mode is shown in figure 225.
Page 591: Application Examples
Section 3 1MRK504116-UUS C IED application SLGGIO SESRSYN (25) PSTO INTONE NAME1 SWPOSN MENMODE NAME2 NAME3 NAME4 ANSI09000171_1_en.vsd ANSI09000171 V1 EN Figure 225: Selection of the energizing direction from a local HMI symbol through a selector switch function block. 3.12.1.2 Application examples The synchronism check function block can also be used in some switchyard arrangements, but with different parameter settings.
Page 592 Section 3 1MRK504116-UUS C IED application Single circuit breaker with single busbar SESRSYN (25) V3PB1* SYNOK Bus 1 V3PB2* AUTOSYOK V3PL1* AUTOENOK V3PL2* MANSYOK BLOCK MANENOK BLKSYNCH TSTSYNOK BLKSC TSTAUTSY BLKENERG TSTMANSY BUS1_OP TSTENOK BUS1_CL VSELFAIL Fuse BUS2_OP B1SEL BUS2_CL B2SEL 1Voltage LINE1_OP...
Page 593 Section 3 1MRK504116-UUS C IED application Single circuit breaker with double busbar, external voltage selection SESRSYN (25) V3PB1* SYNOK V3PB2* AUTOSYOK V3PL1* AUTOENOK Bus 1 V3PL2* MANSYOK Bus 2 BLOCK MANENOK BLKSYNCH TSTSYNOK BLKSC TSTAUTSY BLKENERG TSTMANSY BUS1_OP TSTENOK Fuse BUS1_CL VSELFAIL Fuse...
Page 594 Section 3 1MRK504116-UUS C IED application Single circuit breaker with double busbar, internal voltage selection SESRSYN (25) V3PB1* SYNOK V3PB2* AUTOSYOK V3PL1* AUTOENOK V3PL2* MANSYOK Bus 1 BLOCK MANENOK Bus 2 BLKSYNCH TSTSYNOK BLKSC TSTAUTSY BLKENERG TSTMANSY BUS1_OP TSTENOK BUS1_CL VSELFAIL BUS2_OP B1SEL...
Page 595 Section 3 1MRK504116-UUS C IED application Double circuit breaker SESRSYN (25) V3PB1* SYNOK V3PB2* AUTOSYOK V3PL1* AUTOENOK V3PL2* MANSYOK BLOCK MANENOK BLKSYNCH TSTSYNOK BLKSC TSTAUTSY BLKENERG TSTMANSY BUS1_OP TSTENOK BUS1_CL VSELFAIL Fuse BUS2_OP B1SEL Voltage BUS2_CL B2SEL LINE1_OP L1SEL VREF1 LINE1_CL L2SEL LINE2_OP...
Page 596 Section 3 1MRK504116-UUS C IED application A double breaker arrangement requires two function blocks, SESRSYN1 for breaker QA1 and SESRSYN2 for breaker QA2. No voltage selection is necessary, because the voltage from busbar 1 VT is connected to V3PBB1 on SESRSYN1 and the voltage from busbar 2 VT is connected toV3PBB1 on SESRSYN2.
Page 597 Section 3 1MRK504116-UUS C IED application Bus 1 CB Bus 1 SESRSYN (25) Bus 2 V3PB1* SYNOK V3PB2* AUTOSYOK V3PL1* AUTOENOK V3PL2* MANSYOK BLOCK MANENOK BLKSYNCH TSTSYNOK BLKSC TSTAUTSY BLKENERG TSTMANSY Fuse BUS1_OP TSTENOK bus1 Voltage BUS1_CL VSELFAIL VREF1 BUS2_OP B1SEL BUS2_CL B2SEL...
Page 598 Section 3 1MRK504116-UUS C IED application Bus 2 CB SESRSYN (25) V3PB1* SYNOK V3PB2* AUTOSYOK V3PL1* AUTOENOK V3PL2* MANSYOK BLOCK MANENOK BLKSYNCH TSTSYNOK Bus 1 BLKSC TSTAUTSY BLKENERG TSTMANSY Bus 2 BUS1_OP TSTENOK BUS1_CL VSELFAIL BUS2_OP B1SEL BUS2_CL B2SEL LINE1_OP L1SEL LINE1_CL L2SEL...
Page 599 Section 3 1MRK504116-UUS C IED application function blocks, SESRSYN1 for busbar2 CB and SESRSYN2 for the tie CB. The voltage from busbar1 VT is connected to V3PB2 on both function blocks and the voltage from busbar2 VT is connected to V3PB1 on both function blocks. The voltage from line1 VT is connected to V3PL2 on both function blocks and the voltage from line2 VT is connected to V3PL1 on both function blocks.
Page 600: Setting Guidelines
Section 3 1MRK504116-UUS C IED application 3.12.1.3 Setting guidelines The setting parameters for the Synchronizing, synchronism check and energizing check function SESRSYN (25) are set via the local HMI (LHMI) or PCM600. This setting guidelines describes the settings of the SESRSYN (25) function via the LHMI.
Page 601 Section 3 1MRK504116-UUS C IED application This configuration setting is used to define type of voltage selection. Type of voltage selection can be selected as: • no voltage selection • single circuit breaker with double bus • breaker-and-a-half arrangement with the breaker connected to busbar 1 •...
Page 602 Section 3 1MRK504116-UUS C IED application Setting of the voltage difference between the line voltage and the bus voltage. The difference is set depending on the network configuration and expected voltages in the two networks running asynchronously. A normal setting is 0.10-0.15 p.u. FreqDiffMin The setting FreqDiffMin is the minimum frequency difference where the systems are defined to be asynchronous.
Page 603 Section 3 1MRK504116-UUS C IED application The setting tMaxSynch is set to reset the operation of the synchronizing function if the operation does not take place within this time. The setting must allow for the setting of FreqDiffMin, which will decide how long it will take maximum to reach phase equality.
Page 604 Section 3 1MRK504116-UUS C IED application The phase angle difference level settings, PhaseDiffM and PhaseDiffA, are also chosen depending on conditions in the network. The phase angle setting must be chosen to allow closing under maximum load. A typical maximum value in heavy-loaded networks can be 45 degrees, whereas in most networks the maximum occurring angle is below 25 degrees.
Page 605: Setting Parameters
Section 3 1MRK504116-UUS C IED application VDeadBusEnerg and VDeadLineEnerg The threshold voltages VDeadBusEnerg and VDeadLineEnerg, have to be set to a value greater than the value where the network is considered not to be energized. A typical value can be 40% of the base voltages. A disconnected line can have a considerable potential due to, for instance, induction from a line running in parallel, or by being fed via the extinguishing capacitors in the circuit breakers.
Page 606 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description PhaseShift -180 - 180 Phase shift VRatio 0.040 - 25.000 0.001 1.000 Voltage ratio OperationSynch Disabled Disabled Operation for synchronizing function Off/On Enabled VHighBusSynch 50.0 - 120.0 %VBB 80.0 Voltage high limit bus for synchronizing in %...
Page 607 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description ManEnerg Disabled Both Manual energizing check mode DLLB DBLL Both ManEnergDBDL Disabled Disabled Manual dead bus, dead line energizing Enabled VLiveBusEnerg 50.0 - 120.0 %VBB 80.0 Voltage high limit bus for energizing check in % of UBaseBus VLiveLineEnerg 50.0 - 120.0...
Page 608: Apparatus Control Apc
Section 3 1MRK504116-UUS C IED application Table 150: SESRSYN (25) Non group settings (basic) Name Values (Range) Unit Step Default Description SelPhaseBus1 Phase L1 for Phase L1 for Select phase for busbar1 busbar1 busbar1 Phase L2 for busbar1 Phase L3 for busbar1 Phase L1L2 for busbar1...
Page 609: Application
Section 3 1MRK504116-UUS C IED application 3.12.2.1 Application The apparatus control is a function for control and supervising of circuit breakers, disconnectors, and grounding switches within a bay. Permission to operate is given after evaluation of conditions from other functions such as interlocking, synchronism check, operator place selection and external or internal blockings.
Page 610 Section 3 1MRK504116-UUS C IED application • Pole discrepancy supervision • Operation counter • Suppression of Mid position The apparatus control function is realized by means of a number of function blocks designated: • Switch controller SCSWI • Circuit breaker SXCBR •...
Page 611 Section 3 1MRK504116-UUS C IED application IEC 61850 QCBAY SCSWI SXCBR SXCBR SXCBR SCILO SCSWI SXSWI SCILO en05000116_ansi.vsd ANSI05000116 V1 EN Figure 233: Signal flow between apparatus control function blocks The IEC 61850 communication has always priority over binary inputs, e.g.
Page 612 Section 3 1MRK504116-UUS C IED application • A request initiates to reserve other bays to prevent simultaneous operation. • Actual position inputs for interlocking information are read and evaluated if the operation is permitted. • The synchronism check/synchronizing conditions are read and checked, and performs operation upon positive response.
Page 613 Section 3 1MRK504116-UUS C IED application • Supervision timer that the primary device starts moving after a command • Supervision of allowed time for intermediate position • Definition of pulse duration for open/close command respectively The realization of this function is performed with SXCBR representing a circuit breaker and with SXSWI representing a circuit switch that is, a disconnector or an grounding switch.
Page 614 Section 3 1MRK504116-UUS C IED application another bay or the acknowledgment from each bay respectively, which have received a request from this bay. Also the information of valid transmission over the station bus must be received. SCSWI RES_GRT RES_RQ RESIN EXCH _IN QCRSV EXCH _ OUT...
Page 615: Interaction Between Modules
Section 3 1MRK504116-UUS C IED application The solution in figure can also be realized over the station bus according to the application example in figure 236. The solutions in figure and figure do not have the same high security compared to the solution in figure 234, but have instead a higher availability.
Page 616 Section 3 1MRK504116-UUS C IED application • The logical node Interlocking (SCILO, 3) provides the information to SCSWI whether it is permitted to operate due to the switchyard topology. The interlocking conditions are evaluated with separate logic and connected to SCILO (3). •...
Page 617: Setting Guidelines
Section 3 1MRK504116-UUS C IED application SMPPTRC ZMQPDIS SECRSYN (Trip logic) (Synchrocheck) (Distance) Trip Synchrocheck QCBAY Operator place (Bay control) selection Open cmd Close cmd Res. req. SCSWI SXCBR (Switching control) Res. granted (Circuit breaker) QCRSV (Reservation) Res. req. Close CB SMBRREC (Auto- Position...
Page 618 Section 3 1MRK504116-UUS C IED application Switch controller (SCSWI) The parameter CtlModel specifies the type of control model according to IEC 61850. For normal control of circuit breakers, disconnectors and grounding switches the control model is set to SBO Enh (Select-Before-Operate) with enhanced security. When the operation shall be performed in one step, the model direct control with normal security is used.
Page 619: Setting Parameters
Section 3 1MRK504116-UUS C IED application During the tIntermediate time the position indication is allowed to be in an intermediate (00) state. When the time has expired, the switch function is reset. The indication of the mid-position at SCSWI is suppressed during this time period when the position changes from open to close or vice-versa.
Page 620 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description tSynchronizing 0.00 - 600.00 0.01 0.00 Supervision time to get the signal synchronizing in progress tExecutionFB 0.00 - 600.00 0.01 30.00 Maximum time from command execution to termination tPoleDiscord 0.000 - 60.000...
Page 621: Interlocking (3)
Section 3 1MRK504116-UUS C IED application Table 154: QCRSV Non group settings (basic) Name Values (Range) Unit Step Default Description tCancelRes 0.000 - 60.000 0.001 10.000 Supervision time for canceling the reservation ParamRequest1 Other bays res. Only own bay res. Reservation of the own bay only, at selection Only own bay res.
Page 622 Section 3 1MRK504116-UUS C IED application This section only deals with the first point, and only with restrictions caused by switching devices other than the one to be controlled. This means that switch interlock, because of device alarms, is not included in this section. Disconnectors and grounding switches have a limited switching capacity.
Page 623: Configuration Guidelines
Section 3 1MRK504116-UUS C IED application For switches with an individual operation gear per phase, the evaluation must consider possible phase discrepancies. This is done with the aid of an AND-function for all three phases in each apparatus for both open and close indications. Phase discrepancies will result in an unknown double indication state.
Page 624 Section 3 1MRK504116-UUS C IED application The signals from other bays connected to the module ABC_LINE (3) are described below. Signals from bypass busbar To derive the signals: Signal BB7_D_OP All line disconnectors on bypass WA7 except in the own bay are open. VP_BB7_D The switch status of disconnectors on bypass busbar WA7 are valid.
Page 625 Section 3 1MRK504116-UUS C IED application Signals from bus-coupler If the busbar is divided by bus-section disconnectors into bus sections, the busbar- busbar connection could exist via the bus-section disconnector and bus-coupler within the other bus section. Section 1 Section 2 (WA1)A1 (WA2)B1 (WA7)C...
Page 626 Section 3 1MRK504116-UUS C IED application Signal BC27CLTR A bus-coupler connection through the own bus-coupler exists between busbar WA2 and WA7. VPBC12TR The switch status of BC_12 is valid. VPBC17TR The switch status of BC_17 is valid. VPBC27TR The switch status of BC_27 is valid. EXDU_BC No transmission error from the bay that contains the above information.
Page 627 Section 3 1MRK504116-UUS C IED application BC12CLTR (sect.1) BC_12_CL DCCLTR (A1A2) DCCLTR (B1B2) BC12CLTR (sect.2) VPBC12TR (sect.1) VP_BC_12 VPDCTR (A1A2) VPDCTR (B1B2) VPBC12TR (sect.2) BC17OPTR (sect.1) BC_17_OP DCOPTR (A1A2) BC17OPTR (sect.2) BC17CLTR (sect.1) BC_17_CL DCCLTR (A1A2) BC17CLTR (sect.2) VPBC17TR (sect.1) VP_BC_17 VPDCTR (A1A2) VPBC17TR (sect.2)
Page 628 Section 3 1MRK504116-UUS C IED application Configuration setting If there is no bypass busbar and therefore no 789 disconnector, then the interlocking for 789 is not used. The states for 789, 7189G, BB7_D, BC_17, BC_27 are set to open by setting the appropriate module inputs as follows. In the functional block diagram, 0 and 1 are designated 0=FALSE and 1=TRUE: •...
Page 629: Interlocking For Bus-Coupler Bay Abc_Bc (3)
Section 3 1MRK504116-UUS C IED application 3.12.3.3 Interlocking for bus-coupler bay ABC_BC (3) Application The interlocking for bus-coupler bay (ABC_BC, 3) function is used for a bus-coupler bay connected to a double busbar arrangement according to figure 242. The function can also be used for a single busbar arrangement with transfer busbar or double busbar arrangement without transfer busbar.
Page 630 Section 3 1MRK504116-UUS C IED application For bus-coupler bay n, these conditions are valid: 1289OPTR (bay 1) BBTR_OP 1289OPTR (bay 2) ..1289OPTR (bay n-1) VP1289TR (bay 1) VP_BBTR VP1289TR (bay 2) ..
Page 631 Section 3 1MRK504116-UUS C IED application Signal DCOPTR The bus-section disconnector is open. VPDCTR The switch status of bus-section disconnector DC is valid. EXDU_DC No transmission error from the bay that contains the above information. If the busbar is divided by bus-section circuit breakers, the signals from the bus-section coupler bay (A1A2_BS), rather than the bus-section disconnector bay (A1A2_DC), have to be used.
Page 632 Section 3 1MRK504116-UUS C IED application Signals from bus-coupler If the busbar is divided by bus-section disconnectors into bus-sections, the signals BC_12 from the busbar coupler of the other busbar section must be transmitted to the own busbar coupler if both disconnectors are closed. Section 1 Section 2 (WA1)A1...
Page 633 Section 3 1MRK504116-UUS C IED application If the busbar is divided by bus-section circuit breakers, the signals from the bus-section coupler bay (A1A2_BS), rather than the bus-section disconnector bay (A1A2_DC), must be used. For B1B2_BS, corresponding signals from busbar B are used. The same type of module (A1A2_BS) is used for different busbars, that is, for both bus-section circuit breakers A1A2_BS and B1B2_BS.
Page 634: Interlocking For Transformer Bay Ab_Trafo (3)
Section 3 1MRK504116-UUS C IED application • 7189G_OP = 1 • 7189G_CL = 0 If there is no second busbar B and therefore no 289 and 2089 disconnectors, then the interlocking for 289 and 2089 are not used. The states for 289, 2089, 2189G, BC_12, BBTR are set to open by setting the appropriate module inputs as follows.
Page 635 Section 3 1MRK504116-UUS C IED application WA1 (A) WA2 (B) 189G AB_TRAFO 289G 389G 252 and 489G are not used in this interlocking 489G en04000515_ansi.vsd ANSI04000515 V1 EN Figure 248: Switchyard layout AB_TRAFO (3) The signals from other bays connected to the module AB_TRAFO are described below. Signals from bus-coupler If the busbar is divided by bus-section disconnectors into bus-sections, the busbar- busbar connection could exist via the bus-section disconnector and bus-coupler within...
Page 636: Interlocking For Bus-Section Breaker A1A2_Bs (3)
Section 3 1MRK504116-UUS C IED application The project-specific logic for input signals concerning bus-coupler are the same as the specific logic for the line bay (ABC_LINE): Signal BC_12_CL A bus-coupler connection exists between busbar WA1 and WA2. VP_BC_12 The switch status of BC_12 is valid. EXDU_BC No transmission error from bus-coupler bay (BC).
Page 637 Section 3 1MRK504116-UUS C IED application Section 1 Section 2 (WA1)A1 (WA2)B1 (WA7)C A1A2_BS B1B2_BS ABC_BC ABC_BC ABC_LINE AB_TRAFO ABC_LINE AB_TRAFO en04000489_ansi.vsd ANSI04000489 V1 EN Figure 250: Busbars divided by bus-section circuit breakers To derive the signals: Signal BBTR_OP No busbar transfer is in progress concerning this bus-section. VP_BBTR The switch status of BBTR is valid.
Page 638 Section 3 1MRK504116-UUS C IED application For a bus-section circuit breaker between A1 and A2 section busbars, these conditions are valid: S1S2OPTR (B1B2) BC12OPTR (sect.1) 1289OPTR (bay 1/sect.2) . . . BBTR_OP . . . 1289OPTR (bay n/sect.2) S1S2OPTR (B1B2) BC12OPTR (sect.2) 1289OPTR (bay 1/sect.1) .
Page 639: Interlocking For Bus-Section Disconnector A1A2_Dc (3)
Section 3 1MRK504116-UUS C IED application S1S2OPTR (A1A2) BC12OPTR (sect.1) 1289OPTR (bay 1/sect.2) . . . BBTR_OP . . . 1289OPTR (bay n/sect.2) S1S2OPTR (A1A2) BC12OPTR (sect.2) 1289OPTR (bay 1/sect.1) ..1289OPTR (bay n /sect.1) VPS1S2TR (A1A2) VPBC12TR (sect.1) VP1289TR (bay 1/sect.2)
Page 640 Section 3 1MRK504116-UUS C IED application Application The interlocking for bus-section disconnector (A1A2_DC, 3) function is used for one bus-section disconnector between section 1 and 2 according to figure 253. A1A2_DC (3) function can be used for different busbars, which includes a bus-section disconnector. WA1 (A1) WA2 (A2) 189G...
Page 641 Section 3 1MRK504116-UUS C IED application These signals from each line bay (ABC_LINE), each transformer bay (AB_TRAFO), and each bus-coupler bay (ABC_BC) are needed: Signal 189OPTR 189 is open. 289OPTR 289 is open (AB_TRAFO, ABC_LINE). 22089OTR 289 and 2089 are open (ABC_BC). VP189TR The switch status of 189 is valid.
Page 642 Section 3 1MRK504116-UUS C IED application 189OPTR (bay 1/sect.A1) S1DC_OP ..189OPTR (bay n/sect.A1) VP189TR (bay 1/sect.A1) VPS1_DC ..VP189TR (bay n/sect.A1) EXDU_BB (bay 1/sect.A1) EXDU_BB .
Page 643 Section 3 1MRK504116-UUS C IED application 289OPTR (22089OTR)(bay 1/sect.B1) S1DC_OP ..289OPTR (22089OTR)(bay n/sect.B1) VP289TR (V22089TR)(bay 1/sect.B1) VPS1_DC ..VP289TR (V22089TR)(bay n/sect.B1) EXDU_BB (bay 1/sect.B1) EXDU_BB .
Page 644 Section 3 1MRK504116-UUS C IED application The same type of module (A1A2_DC) is used for different busbars, that is, for both bus- section disconnector A1A2_DC and B1B2_DC. But for B1B2_DC, corresponding signals from busbar B are used. Section 1 Section 2 (WA1)A1 (WA2)B1 A1A2_DC(BS)
Page 645 Section 3 1MRK504116-UUS C IED application 189OPTR (bay 1/sect.A1) S1DC_OP ..189OPTR (bay n/sect.A1) VP189TR (bay 1/sect.A1) VPS1_DC ..VP189TR (bay n/sect.A1) EXDU_DB (bay 1/sect.A1) EXDU_BB .
Page 646 Section 3 1MRK504116-UUS C IED application 289OPTR (bay 1/sect.B1) S1DC_OP ..289OPTR (bay n/sect.B1) VP289TR (bay 1/sect.B1) VPS1_DC ..VP289TR (bay n/sect.B1) EXDU_DB (bay 1/sect.B1) EXDU_BB .
Page 647: Interlocking For Busbar Grounding Switch Bb_Es (3)
Section 3 1MRK504116-UUS C IED application Section 1 Section 2 (WA1)A1 (WA2)B1 A1A2_DC(BS) B1B2_DC(BS) BH_LINE BH_LINE BH_LINE BH_LINE en04000503_ansi.vsd ANSI04000503 V1 EN Figure 264: Busbars divided by bus-section disconnectors (circuit breakers) The project-specific logic is the same as for the logic for the double-breaker configuration. Signal S1DC_OP All disconnectors on bus-section 1 are open.
Page 648 Section 3 1MRK504116-UUS C IED application Section 1 Section 2 (WA1)A1 (WA2)B1 (WA7)C A1A2_DC(BS) B1B2_DC(BS) BB_ES ABC_BC BB_ES ABC_LINE AB_TRAFO ABC_LINE en04000505_ansi.vsd ANSI04000505 V1 EN Figure 266: Busbars divided by bus-section disconnectors (circuit breakers) To derive the signals: Signal BB_DC_OP All disconnectors on this part of the busbar are open.
Page 649 Section 3 1MRK504116-UUS C IED application If no bus-section disconnector exists, the signal DCOPTR, VPDCTR and EXDU_DC are set to 1 (TRUE). If the busbar is divided by bus-section circuit breakers, the signals from the bus-section coupler bay (A1A2_BS) rather than the bus-section disconnector bay (A1A2_DC) must be used.
Page 650 Section 3 1MRK504116-UUS C IED application 189OPTR (bay 1/sect.A2) BB_DC_OP ..189OPTR (bay n/sect.A2) DCOPTR (A1/A2) VP189TR (bay 1/sect.A2) VP_BB_DC ..VP189TR (bay n/sect.A2) VPDCTR (A1/A2) EXDU_BB (bay 1/sect.A2) .
Page 651 Section 3 1MRK504116-UUS C IED application 289OPTR(22089OTR)(bay 1/sect.B1) BB_DC_OP ..289PTR (22089OTR)(bay n/sect.B1) DCOPTR (B1/B2) VP289TR(V22089TR) (bay 1/sect.B1) VP_BB_DC ..VP289TR(V22089TR) (bay n/sect.B1) VPDCTR (B1/B2) EXDU_BB (bay 1/sect.B1) .
Page 652 Section 3 1MRK504116-UUS C IED application 289OPTR(22089OTR) (bay 1/sect.B2) BB_DC_OP ..289OPTR(22089OTR) (bay n/sect.B2) DCOPTR (B1/B2) VP289TR(V22089TR) (bay 1/sect.B2) VP_BB_DC ..VP289TR(V22089TR) (bay n/sect.B2) VPDCTR (B1/B2) EXDU_BB (bay 1/sect.B2) .
Page 653 Section 3 1MRK504116-UUS C IED application Signals in double-breaker arrangement The busbar grounding switch is only allowed to operate if all disconnectors of the bus section are open. Section 1 Section 2 (WA1)A1 (WA2)B1 A1A2_DC(BS) B1B2_DC(BS) BB_ES BB_ES DB_BUS DB_BUS en04000511_ansi.vsd ANSI04000511 V1 EN Figure 272:...
Page 654: Interlocking For Double Cb Bay Db (3)
Section 3 1MRK504116-UUS C IED application The logic is identical to the double busbar configuration described in section “Signals in single breaker arrangement”. Signals in breaker and a half arrangement The busbar grounding switch is only allowed to operate if all disconnectors of the bus- section are open.
Page 655 Section 3 1MRK504116-UUS C IED application WA1 (A) WA2 (B) 189G 489G DB_BUS_B DB_BUS_A 289G 589G 6189 6289 389G DB_LINE 989G en04000518_ansi.vsd ANSI04000518 V1 EN Figure 274: Switchyard layout double circuit breaker Three types of interlocking modules per double circuit breaker bay are defined. DB_LINE (3) is the connection from the line to the circuit breaker parts that are connected to the busbars.
Page 656: Interlocking For Breaker-And-A-Half Diameter Bh (3)
Section 3 1MRK504116-UUS C IED application • 989_OP = VOLT_OFF • 989_CL = VOLT_ON If there is no voltage supervision, then set the corresponding inputs as follows: • VOLT_OFF = 1 • VOLT_ON = 0 3.12.3.9 Interlocking for breaker-and-a-half diameter BH (3) Application The interlocking for breaker-and-a-half diameter (BH_CONN(3), BH_LINE_A(3), BH_LINE_B(3)) functions are used for lines connected to a breaker-and-a-half...
Page 657: Horizontal Communication Via Goose For Interlocking Gooseintlkrcv
Section 3 1MRK504116-UUS C IED application connection between the two lines of the diameter in the breaker-and-a-half switchyard layout. For a breaker-and-a-half arrangement, the modules BH_LINE_A, BH_CONN and BH_LINE_B must be used. Configuration setting For application without 989 and 989G, just set the appropriate inputs to open state and disregard the outputs.
Page 658: Application
Section 3 1MRK504116-UUS C IED application Function description IEC 61850 IEC 60617 ANSI/IEEE C37.2 identification identification device number Automatic voltage control for tap TR1ATCC changer, single control IEC10000165 V1 EN Automatic voltage control for tap TR8ATCC changer, parallel control IEC10000166 V1 EN Tap changer control and supervision, 6 TCMYLTC binary inputs...
Page 659 Section 3 1MRK504116-UUS C IED application Of these alternatives, the first and the last require communication between the function control blocks of the different transformers, whereas the middle alternative does not require any communication. The voltage control includes many extra features such as possibility to avoid simultaneous tapping of parallel transformers, hot stand by regulation of a transformer within a parallel group, with a LV CB open, compensation for a possible capacitor bank on the LV side bay of a transformer, extensive tap changer monitoring including...
Page 660 Section 3 1MRK504116-UUS C IED application QCBAY function block to the input PSTO of the TR1ATCC (90) or TR8ATCC (90) function block. Control Mode The control mode of the automatic voltage control for tap changer function, TR1ATCC (90) for single control and TR8ATCC (90) for parallel control can be: •...
Page 661 Section 3 1MRK504116-UUS C IED application High Voltage Side raise,lower signals/alarms position (Load Current) I 3ph or ph-ph or 1ph Currents 3ph or ph-ph or 1ph Voltages Low Voltage Side VB (Busbar Voltage) Line Impedance R+jX Load Center VL (Load Point Voltage) ANSI10000044-1-en.vsd ANSI10000044 V1 EN Figure 276:...
Page 662 Section 3 1MRK504116-UUS C IED application Automatic voltage control for a single transformer Automatic voltage control for tap changer, single control TR1ATCC (90) measures the magnitude of the busbar voltage VB. If no other additional features are enabled (line voltage drop compensation), this voltage is further used for voltage regulation. TR1ATCC (90) then compares this voltage with the set voltage, VSet and decides which action should be taken.
Page 663 Section 3 1MRK504116-UUS C IED application When V falls below setting Vblock, or alternatively, falls below setting Vmin but still above Vblock, or rises above Vmax, actions will be taken in accordance with settings for blocking conditions (refer to table 161). If the busbar voltage rises above Vmax, TR1ATCC (90) can initiate one or more fast step down commands (VLOWER commands) in order to bring the voltage back into the security range (settings Vmin, and Vmax).
Page 664 Section 3 1MRK504116-UUS C IED application tMin (Equation 422) EQUATION1848 V2 EN Where: absolute voltage deviation from the set point relative voltage deviation in respect to set deadband value For the last equation, the condition t1 > tMin shall also be fulfilled. This practically means that tMin will be equal to the set t1 value when absolute voltage deviation DA is equal to ΔV ( relative voltage deviation D is equal to 1).
Page 665 Section 3 1MRK504116-UUS C IED application Line voltage drop The purpose with the line voltage drop compensation is to control the voltage, not at the power transformer low voltage side, but at a point closer to the load point. Figure shows the vector diagram for a line modelled as a series impedance with the voltage V at the LV busbar and voltage V...
Page 666 Section 3 1MRK504116-UUS C IED application The calculated load voltage V is shown on the local HMI as value ULOAD under Main menu/Test/Function status/Control/TransformerVoltageControl(ATCC,90)/ TR1ATCC:x/TR8ATCC:x. Load voltage adjustment Due to the fact that most loads are proportional to the square of the voltage, it is possible to provide a way to shed part of the load by decreasing the supply voltage a couple of percent.
Page 667 Section 3 1MRK504116-UUS C IED application It shall be noted that the adjustment factor is negative in order to decrease the load voltage and positive in order to increase the load voltage. After this calculation V set, will be used by TR1ATCC (90) or TR8ATCC (90) for voltage regulation instead adjust of the original value Vset.
Page 668 Section 3 1MRK504116-UUS C IED application Parallel control with the master-follower method In the master-follower method, one of the transformers is selected to be master, and will regulate the voltage in accordance with the principles for Automatic voltage control. Selection of the master is made by activating the binary input FORCMAST in TR8ATCC (90) function block for one of the transformers in the group.
Page 669 Section 3 1MRK504116-UUS C IED application Load en06000486_ansi.vsd ANSI06000486 V1 EN Figure 281: Parallel transformers with equal rated data. In the reverse reactance method, the line voltage drop compensation is used. The purpose is to control the voltage at a load point further out in the network. The very same function can also be used here but with a completely different objective.
Page 670 Section 3 1MRK504116-UUS C IED application A comparison with figure gives that the line voltage drop compensation for the purpose of reverse reactance control is made with a value with opposite sign on X hence the designation “reverse reactance” or “negative reactance”. Effectively this means that, whereas the line voltage drop compensation in figure gave a voltage drop along a line from the busbar voltage V...
Page 671 Section 3 1MRK504116-UUS C IED application in other words, the transformer with the higher tap position will have the higher V value and the transformer with the lower tap position will have the lower V value. Consequently, when the busbar voltage increases, T1 will be the one to tap down, and when the busbar voltage decreases, T2 will be the one to tap up.
Page 672 Section 3 1MRK504116-UUS C IED application The calculated mean busbar voltage V is shown on the local HMI as a service Bmean value BusVolt under Main menu/Test/Function status/Control/ TransformerVoltageControl(ATCC,90)/TR8ATCC:x. Measured current values for the individual transformers must be communicated between the participating TR8ATCC (90) functions, in order to calculate the circulating current.
Page 673 Section 3 1MRK504116-UUS C IED application calculated no-load voltages for all transformers in the parallel group are inside the outer deadband. In parallel operation with the circulating current method, different VSet values for individual transformers can cause the voltage regulation to be unstable. For this reason, the mean value of VSet for parallel operating transformers can be automatically calculated and used for the voltage regulation.
Page 674 Section 3 1MRK504116-UUS C IED application Avoidance of simultaneous tapping (operation with the master follower method) A time delay for the follower in relation to the command given from the master can be set when the setting MFMode is Follow Tap that is, when the follower follows the tap position (with or without an offset) of the master.
Page 675 Section 3 1MRK504116-UUS C IED application When the circulating current method is used, it is also possible to manually control the transformers as a group. To achieve this, the setting OperationAdapt must be set Enabled, then the control mode for one TR8ATCC (90) shall be set to “Manual” via the binary input MANCTRL or the local HMI under Main menu/Control/Commands/ TransformerVoltageControl(ATCC,90)/TR8ATCC:x whereas the other TR8ATCCs (90) are left in “Automatic”.
Page 676 Section 3 1MRK504116-UUS C IED application Plant with capacitive shunt compensation (for operation with the circulating current method) If significant capacitive shunt generation is connected in a substation and it is not symmetrically connected to all transformers in a parallel group, the situation may require compensation of the capacitive current to the ATCC.
Page 677 Section 3 1MRK504116-UUS C IED application I cc..T2 I cc..T2 I cc..T1 cc..T1 Load Load en06000512_ansi.vsd ANSI06000512 V1 EN Figure 284: Capacitor bank on the LV-side From figure it is obvious that the two different connections of the capacitor banks are completely the same regarding the currents in the primary network.
Page 678 Section 3 1MRK504116-UUS C IED application (Equation 426) EQUATION1981-ANSI V1 EN Thereafter the current I at the actual measured voltage VB can be calculated as: × (Equation 427) EQUATION1982-ANSI V1 EN In this way the measured LV currents can be adjusted so that the capacitor bank current will not influence the calculation of the circulating current.
Page 679 Section 3 1MRK504116-UUS C IED application HV-side Pforward Qforward (inductive) ATCC LV-side ANSI06000536-2-en.vsd ANSI06000536 V2 EN Figure 285: Power direction references With the four outputs in the function block available, it is possible to do more than just supervise a level of power flow in one direction. By combining the outputs with logical elements in application configuration, it is also possible to cover for example, intervals as well as areas in the P-Q plane.
Page 680 Section 3 1MRK504116-UUS C IED application 99000952.VSD ANSI99000952 V1 EN Figure 286: Disconnection of one transformer in a parallel group When the busbar arrangement is more complicated with more buses and bus couplers/ bus sections, it is necessary to engineer a specific station topology logic. This logic can be built in the application configuration in PCM600 and will keep record on which transformers that are in parallel (in one or more parallel groups).
Page 681 Section 3 1MRK504116-UUS C IED application TCMYLTC or TCLYLTC (84) function block for the same transformer as TR8ATCC (90) block belongs to. There are 10 binary signals and 6 analog signals in the data set that is transmitted from one TR8ATCC (90) block to the other TR8ATCC (90) blocks in the same parallel group: Table 158: Binary signals Signal...
Page 682 Section 3 1MRK504116-UUS C IED application • SetV • VCTRStatus • The transformers controlled in parallel with the circulating current method or the master- follower method must be assigned unique identities. These identities are entered as a setting in each TR8ATCC (90), and they are predefined as T1, T2, T3,..., T8 (transformers 1 to 8).
Page 683 Section 3 1MRK504116-UUS C IED application Partial Block: Prevents operation of the tap changer only in one direction (only VRAISE or VLOWER command is blocked) in manual and automatic control mode. Auto Block: Prevents automatic voltage regulation, but the tap changer can still be controlled manually.
Page 684 Section 3 1MRK504116-UUS C IED application Setting Values (Range) Description RevActPartBk(auto Alarm The risk of voltage instability increases as transmission matically reset) Auto Block lines become more heavily loaded in an attempt to maximize the efficient use of existing generation and transmission facilities.
Page 685 Section 3 1MRK504116-UUS C IED application Setting Values (Range) Description TapChgBk Alarm If the input TCINPROG of TCMYLTC or TCLYLTC (84) (manually reset Auto Block function block is connected to the tap changer Auto&Man Block mechanism, then this blocking condition will be active if tTCTimeout the TCINPROG input has not reset when the timer has timed out.
Page 686 Section 3 1MRK504116-UUS C IED application Setting Values (Range) Description TapPosBk Alarm This blocking/alarm is activated by either: (automatically Auto Block The tap changer reaching an end position i.e. one of reset/manually Auto&Man Block the extreme positions according to the setting reset) parameters LowVoltTap and HighVoltTap .
Page 687 Section 3 1MRK504116-UUS C IED application Setting parameters for blocking that can be set in TR1ATCC (90) or TR8ATCC (90) under setting group Nx in PST/ local HMI are listed in table 162. Table 162: Blocking settings Setting Value (Range) Description Enabled / Disabled TotalBlock (manually reset)
Page 688 Section 3 1MRK504116-UUS C IED application Table 164: Blockings without setting possibilities Activation Type of blocking Description Disconnected Auto Block Automatic control is blocked for a transformer when transformer parallel control with the circulating current method is (automatically reset) used, and that transformer is disconnected from the LV-busbar.
Page 689 Section 3 1MRK504116-UUS C IED application The following conditions in any one of TR8ATCCs (90) in the group will cause mutual blocking when the circulating current method is used: • Over-Current • Total block via settings • Total block via configuration •...
Page 690 Section 3 1MRK504116-UUS C IED application The mutual blocking remains until TR8ATCC (90) that dispatched the mutual block signal is de-blocked. Another way to release the mutual blocking is to force TR8ATCC (90), which caused mutual blocking to Single mode operation. This is done by activating the binary input SNGLMODE on TR8ATCC (90) function block or by setting the parameter OperationPAR to Off from the built-in local HMI or PST.
Page 691 Section 3 1MRK504116-UUS C IED application input TCINPROG, and it can then be used by TCMYLTC (84) or TCLYLTC (84) function in three ways, which is explained below with the help of figure 287. VRAISE/VLOWER tTCTimeout TCINPROG en06000482_ansi.vsd ANSI06000482 V1 EN Figure 287: Timing of pulses for tap changer operation monitoring pos Description...
Page 692 Section 3 1MRK504116-UUS C IED application The second use is to detect a jammed tap changer. If the timer tTCTimeout times out before the TCINPROG signal is set back to zero, the output signal TCERRAL is set high and TR1ATCC (90) or TR8ATCC (90) function is blocked. The third use is to check the proper operation of the tap changer mechanism.
Page 693: Setting Guidelines
Section 3 1MRK504116-UUS C IED application Wearing of the tap changer contacts Two counters, ContactLife and NoOfOperations are available within the Tap changer control and supervision function, 6 binary inputs TCMYLTC or 32 binary inputs TCLYLTC (84). They can be used as a guide for maintenance of the tap changer mechanism.
Page 694 Section 3 1MRK504116-UUS C IED application means that different time delays can be used in the different followers in order to avoid simultaneous tapping if this is wanted. It shall be observed that it is not applicable in the follow command mode. OperationAdapt: This setting enables or disables adapt mode for parallel control with the circulating current method or the master-follower method.
Page 695 Section 3 1MRK504116-UUS C IED application MeasMode: Selection of single phase, or phase-phase, or positive sequence quantity to be used for voltage and current measurement on the LV-side. The involved phases are also selected. Thus, single phase as well as phase-phase or three-phase feeding on the LV-side is possible but it is commonly selected for current and voltage.
Page 696 Section 3 1MRK504116-UUS C IED application VBase. If UVPartBk is set to Auto Block orAuto&ManBlock, then busbar voltages below Vmin will result in a partial blocking such that only raise commands are permitted. Vblock: Voltages below Vblock normally correspond to a disconnected transformer and therefore it is recommended to block automatic control for this condition (setting UVBk).
Page 697 Section 3 1MRK504116-UUS C IED application controlled in a parallel group with the reverse reactance method and with no circulation (for example, assume two equal transformers on the same tap position). The load with the power factor j and the argument of the current lags the busbar voltage V impedance Rline and Xline is designated j1.
Page 698 Section 3 1MRK504116-UUS C IED application j = - - ( 37 ) 90 (Equation 430) EQUATION1939 V1 EN To achieve a more correct regulation, an adjustment to a value of j2 slightly less than -90° (2 – 4° less) can be made. The effect of changing power factor of the load will be that j2 will no longer be close to -90°...
Page 699 Section 3 1MRK504116-UUS C IED application only a small difference in tap position, but the voltage regulation as such will be more sensitive to a deviation from the anticipated power factor. A too high setting of Xline can cause a hunting situation as the transformers will then be prone to over react on deviations from the target value.
Page 700 Section 3 1MRK504116-UUS C IED application Tap changer control (TCCtrl) Iblock: Current setting of the over current blocking function. In case, the transformer is carrying a current exceeding the rated current of the tap changer for example, because of an external fault. The tap changer operations shall be temporarily blocked. This function typically monitors the three phase currents on the HV side of the transformer.
Page 701 Section 3 1MRK504116-UUS C IED application setting. Reference is made to figure for definition of forward and reverse direction of power through the transformer. P< en06000635_2_en.vsd IEC06000635 V2 EN Figure 291: Setting of a positive value for P< Q>: When the reactive power exceeds the value given by this setting, the output QGTFWD will be activated after the time delay tPower.
Page 702 Section 3 1MRK504116-UUS C IED application ´ D = ´ ´ Comp a 100% ´ (Equation 431) EQUATION1984-ANSI V1 EN where: DV is the deadband setting in percent. • • n denotes the desired number of difference in tap position between the transformers, that shall give a voltage deviation V which corresponds to the dead- band setting.
Page 703 Section 3 1MRK504116-UUS C IED application T1RXOP..T8RXOP: This setting is set Enabled for every transformer that can participate in a parallel group with the transformer in case. For this transformer (own transformer), the setting must always be Disabled. TapPosOffs: This setting gives the tap position offset in relation to the master so that the follower can follow the master’s tap position including this offset.
Page 704: Setting Parameters
Section 3 1MRK504116-UUS C IED application counter that is, the total number of operations at rated load that the tap changer is designed for. EnabTapCmd: This setting enables/disables the lower and raise commands to the tap changer. It shall be Enabled for voltage control, and Disabled for tap position feedback to the transformer differential protection T2WPDIF (87T) or T3WPDIF (87T).
Page 705 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description Vset 85.0 - 120.0 100.0 Voltage control set voltage, % of rated voltage VDeadband 0.2 - 9.0 Outer voltage deadband, % of rated voltage VDeadbandInner 0.1 - 9.0 Inner voltage deadband, % of rated voltage Vmax 80 - 180...
Page 706 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description P> -9999.99 - 9999.99 0.01 1000 Alarm level of active power in forward direction P< -9999.99 - 9999.99 0.01 -1000 Alarm level of active power in reverse direction Q>...
Page 707 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description MeasMode PosSeq Selection of measured voltage and current PosSeq -9999.99 - 9999.99 MVAr 0.01 Size of cap/reactor bank 1 in MVAr, >0 for C and <0 for L -9999.99 - 9999.99 MVAr 0.01...
Page 708 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description LVAConst2 -20.0 - 20.0 Constant 2 for LVA, % of regulated voltage LVAConst3 -20.0 - 20.0 Constant 3 for LVA, % of regulated voltage LVAConst4 -20.0 - 20.0 Constant 4 for LVA, % of regulated voltage VRAuto -20.0 - 20.0...
Page 709 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description tVTmismatch 1 - 600 Time delay for VT supervision alarm T1RXOP Disabled Disabled Receive block operation from parallel Enabled transformer1 T2RXOP Disabled Disabled Receive block operation from parallel Enabled transformer2 T3RXOP...
Page 710 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description CmdErrBk Alarm Auto Block Alarm, auto block or auto&man block for Auto Block command error Auto&Man Block OCBk Alarm Auto&Man Block Alarm, auto block or auto&man block for Auto Block overcurrent Auto&Man Block...
Page 711 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description CodeType Type of code conversion Gray SINGLE UseParity Disabled Disabled Enable parity check Enabled tStable 1 - 60 Time after position change before the value is accepted CLFactor 1.0 - 3.0 Adjustable factor for contact life function...
Page 712: Logic Rotating Switch For Function Selection And Lhmi Presentation Slggio
Section 3 1MRK504116-UUS C IED application 3.12.5 Logic rotating switch for function selection and LHMI presentation SLGGIO Function description IEC 61850 IEC 60617 ANSI/IEEE C37.2 identification identification device number Logic rotating switch for function SLGGIO selection and LHMI presentation 3.12.5.1 Application The logic rotating switch for function selection and LHMI presentation function (SLGGIO) (or the selector switch function block, as it is also known) is used to get a...
Page 713: Setting Parameters
Section 3 1MRK504116-UUS C IED application tPulse: In case of a pulsed output, it gives the length of the pulse (in seconds). tDelay: The delay between the UP or DOWN activation signal positive front and the output activation. StopAtExtremes: Sets the behavior of the switch at the end positions – if set to Disabled, when pressing UP while on first position, the switch will jump to the last position;...
Page 714: Setting Guidelines
Section 3 1MRK504116-UUS C IED application An example where VSGGIO is configured to switch Autorecloser enabled–disabled from a button symbol on the local HMI is shown in figure 292. The Close and Open buttons on the local HMI are normally used for enable–disable operations of the circuit breaker.
Page 715: Iec61850 Generic Communication I/O Functions Dpggio
Section 3 1MRK504116-UUS C IED application 3.12.7 IEC61850 generic communication I/O functions DPGGIO Function description IEC 61850 IEC 60617 ANSI/IEEE C37.2 identification identification device number IEC 61850 generic communication I/O DPGGIO functions 3.12.7.1 Application The IEC61850 generic communication I/O functions (DPGGIO) function block is used to send three logical outputs to other systems or equipment in the substation.
Page 716: Setting Guidelines
Section 3 1MRK504116-UUS C IED application 3.12.8.2 Setting guidelines The parameters for the single point generic control 8 signals (SPC8GGIO) function are set via the local HMI or PCM600. Operation: turning the function operation Enabled/Disabled. There are two settings for every command output (totally 8): Latchedx: decides if the command signal for output x is Latched (steady) or Pulsed.
Page 717: Automationbits, Command Function For Dnp3.0 Autobits
Section 3 1MRK504116-UUS C IED application 3.12.9 AutomationBits, command function for DNP3.0 AUTOBITS Function description IEC 61850 IEC 60617 ANSI/IEEE C37.2 identification identification device number AutomationBits, command function for AUTOBITS DNP3 3.12.9.1 Application Automation bits, command function for DNP3 (AUTOBITS) is used within PCM600 in order to get into the configuration the commands coming through the DNP3.0 protocol.The AUTOBITS function plays the same role as functions GOOSEBINRCV (for IEC 61850) and MULTICMDRCV (for LON).AUTOBITS function block have 32...
Page 718 Section 3 1MRK504116-UUS C IED application Table 177: CHSERRS485 Non group settings (basic) Name Values (Range) Unit Step Default Description Operation Disabled Disabled Operation mode Serial-Mode BaudRate 300 Bd 9600 Bd Baud-rate for serial port 600 Bd 1200 Bd 2400 Bd 4800 Bd 9600 Bd 19200 Bd...
Page 719 Section 3 1MRK504116-UUS C IED application Table 180: CH2TCP Non group settings (advanced) Name Values (Range) Unit Step Default Description ApLayMaxRxSize 20 - 2048 2048 Application layer maximum Rx fragment size ApLayMaxTxSize 20 - 2048 2048 Application layer maximum Tx fragment size Table 181: CH3TCP Non group settings (basic) Name...
Page 720 Section 3 1MRK504116-UUS C IED application Table 185: CH5TCP Non group settings (basic) Name Values (Range) Unit Step Default Description Operation Disabled Disabled Operation mode TCP/IP UDP-Only TCPIPLisPort 1 - 65535 20000 TCP/IP listen port UDPPortAccData 1 - 65535 20000 UDP port to accept UDP datagrams from master UDPPortInitNUL...
Page 721 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description Obj22DefVar 1:BinCnt32EvWout 1:BinCnt32EvWou Object 22, default variation 2:BinCnt16EvWout 5:BinCnt32EvWith 6:BinCnt16EvWith Obj30DefVar 1:AI32Int 3:AI32IntWithoutF Object 30, default variation 2:AI16Int 3:AI32IntWithoutF 4:AI16IntWithoutF 5:AI32FltWithF 6:AI64FltWithF Obj32DefVar 1:AI32IntEvWoutF 1:AI32IntEvWoutF Object 32, default variation 2:AI16IntEvWoutF 3:AI32IntEvWithFT 4:AI16IntEvWithFT...
Page 722 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description tURRetryDelay 0.00 - 60.00 0.01 5.00 Unsolicited response retry delay in s tUROfflRtryDel 0.00 - 60.00 0.01 30.00 Unsolicited response off-line retry delay in s UREvCntThold1 1 - 100 Unsolicited response class 1 event count report treshold tUREvBufTout1...
Page 723 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description Obj2DefVar 1:BIChWithoutTim 3:BIChWithRelTim Object 2, default variation 2:BIChWithTime 3:BIChWithRelTim Obj3DefVar 1:DIWithoutFlag 1:DIWithoutFlag Object 3, default variation 2:DIWithFlag Obj4DefVar 1:DIChWithoutTim 3:DIChWithRelTim Object 4, default variation 2:DIChWithTime 3:DIChWithRelTim Obj10DefVar 1:BO 2:BOStatus Object 10, default variation...
Page 724 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description ConfMultFrag Confirm each multiple fragment UREnable Unsolicited response enabled UREvClassMask Disabled Disabled Unsolicited response, event class mask Class 1 Class 2 Class 1 and 2 Class 3 Class 1 and 3 Class 2 and 3 Class 1, 2 and 3...
Page 725 Section 3 1MRK504116-UUS C IED application Table 191: MST2TCP Non group settings (basic) Name Values (Range) Unit Step Default Description Operation Disabled Disabled Disable/Enable Operation Enabled SlaveAddress 0 - 65519 Slave address MasterAddres 0 - 65519 Master address ValMasterAddr Validate source (master) address MasterIP-Addr 0 - 18 0.0.0.0...
Page 726 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description Obj22DefVar 1:BinCnt32EvWout 1:BinCnt32EvWou Object 22, default variation 2:BinCnt16EvWout 5:BinCnt32EvWith 6:BinCnt16EvWith Obj30DefVar 1:AI32Int 3:AI32IntWithoutF Object 30, default variation 2:AI16Int 3:AI32IntWithoutF 4:AI16IntWithoutF 5:AI32FltWithF 6:AI64FltWithF Obj32DefVar 1:AI32IntEvWoutF 1:AI32IntEvWoutF Object 32, default variation 2:AI16IntEvWoutF 3:AI32IntEvWithFT 4:AI16IntEvWithFT...
Page 727 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description tUREvBufTout1 0.00 - 60.00 0.01 5.00 Unsolicited response class 1 event buffer timeout UREvCntThold2 1 - 100 Unsolicited response class 2 event count report treshold tUREvBufTout2 0.00 - 60.00 0.01 5.00 Unsolicited response class 2 event buffer...
Page 728 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description Obj2DefVar 1:BIChWithoutTim 3:BIChWithRelTim Object 2, default variation 2:BIChWithTime 3:BIChWithRelTim Obj3DefVar 1:DIWithoutFlag 1:DIWithoutFlag Object 3, default variation 2:DIWithFlag Obj4DefVar 1:DIChWithoutTim 3:DIChWithRelTim Object 4, default variation 2:DIChWithTime 3:DIChWithRelTim Obj10DefVar 1:BO 2:BOStatus Object 10, default variation...
Page 729 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description ConfMultFrag Confirm each multiple fragment UREnable Unsolicited response enabled UREvClassMask Disabled Disabled Unsolicited response, event class mask Class 1 Class 2 Class 1 and 2 Class 3 Class 1 and 3 Class 2 and 3 Class 1, 2 and 3...
Page 730 Section 3 1MRK504116-UUS C IED application Table 195: MST4TCP Non group settings (basic) Name Values (Range) Unit Step Default Description Operation Disabled Disabled Disable/Enable Operation Enabled SlaveAddress 0 - 65519 Slave address MasterAddres 0 - 65519 Master address ValMasterAddr Validate source (master) address MasterIP-Addr 0 - 18 0.0.0.0...
Page 731 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description Obj22DefVar 1:BinCnt32EvWout 1:BinCnt32EvWou Object 22, default variation 2:BinCnt16EvWout 5:BinCnt32EvWith 6:BinCnt16EvWith Obj30DefVar 1:AI32Int 3:AI32IntWithoutF Object 30, default variation 2:AI16Int 3:AI32IntWithoutF 4:AI16IntWithoutF 5:AI32FltWithF 6:AI64FltWithF Obj32DefVar 1:AI32IntEvWoutF 1:AI32IntEvWoutF Object 32, default variation 2:AI16IntEvWoutF 3:AI32IntEvWithFT 4:AI16IntEvWithFT...
Page 732: Single Command, 16 Signals Singlecmd
Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description tUREvBufTout1 0.00 - 60.00 0.01 5.00 Unsolicited response class 1 event buffer timeout UREvCntThold2 1 - 100 Unsolicited response class 2 event count report treshold tUREvBufTout2 0.00 - 60.00 0.01 5.00 Unsolicited response class 2 event buffer...
Page 733 Section 3 1MRK504116-UUS C IED application outputs that can be used, for example, to control high voltage apparatuses in switchyards. For local control functions, the local HMI can also be used. Together with the configuration logic circuits, the user can govern pulses or steady output signals for control purposes within the IED or via binary outputs.
Page 734 Section 3 1MRK504116-UUS C IED application Single command function Function n SINGLECMD Function n CMDOUTy OUTy en04000207.vsd IEC04000207 V2 EN Figure 294: Application example showing a logic diagram for control of built-in functions Single command function Configuration logic circuits SINGLESMD Device 1 CMDOUTy OUTy...
Page 735: Setting Guidelines
Section 3 1MRK504116-UUS C IED application 3.12.10.2 Setting guidelines The parameters for Single command, 16 signals (SINGLECMD) are set via the local HMI or PCM600. Parameters to be set are MODE, common for the whole block, and CMDOUTy which includes the user defined name for each output signal. The MODE input sets the outputs to be one of the types Disabled, Steady, or Pulse.
Page 736: Setting Guidelines
Section 3 1MRK504116-UUS C IED application One communication channel is used in each direction, which can transmit an on/off signal if required. The performance and security of this function is directly related to the transmission channel speed and security against false or lost signals. In the directional scheme, information of the fault current direction must be transmitted to the other line end.
Page 737: Setting Parameters
Section 3 1MRK504116-UUS C IED application tCoord: Delay time for trip from ECPSCH (85) function. For Permissive under/ overreaching schemes, this timer shall be set to at least 20 ms plus maximum reset time of the communication channel as a security margin. For Blocking scheme, the setting should be >...
Page 738: Application
Section 3 1MRK504116-UUS C IED application 3.13.2.1 Application Fault current reversal logic Figure and figure show a typical system condition, which can result in a fault current reversal. Note that the fault current is reversed in line L2 after the breaker opening. This can cause an unselective trip on line L2 if the current reversal logic does not block the permissive overreaching scheme in the IED at B:2.
Page 739: Setting Guidelines
Section 3 1MRK504116-UUS C IED application Weak-end infeed logic Figure shows a typical system condition that can result in a missing operation. Note that there is no fault current from node B. This causes that the IED at B cannot detect the fault and trip the breaker in B.
Page 740 Section 3 1MRK504116-UUS C IED application teleprotection equipment typical decision time is in the range 10 – 30 ms. For digital teleprotection equipment this time is in the range 2 – 10 ms. If the teleprotection equipment is integrated in the protection IED the decision time can be slightly reduced.
Page 741: Setting Parameters
Section 3 1MRK504116-UUS C IED application 3.13.2.3 Setting parameters Table 200: ECRWPSCH (85) Group settings (basic) Name Values (Range) Unit Step Default Description CurrRev Disabled Disabled Operating mode of Current Reversal Logic Enabled tPickUpRev 0.000 - 60.000 0.001 0.020 Pickup time for current reversal logic tDelayRev 0.000 - 60.000 0.001...
Page 742 Section 3 1MRK504116-UUS C IED application tripping command when phase selection within the operating protection functions is not possible, or when external conditions request three-pole tripping. • Two-pole tripping for two-phase faults. The three-pole trip for all faults offers a simple solution and is often sufficient in well meshed transmission systems and in sub-transmission systems.
Page 743 Section 3 1MRK504116-UUS C IED application Set the function block to Program = 3Ph and set the required length of the trip pulse to for example, tTripMin = 150ms. For special applications such as Lock-out refer to the separate section below. The typical connection is shown below in figure 300.
Page 744 Section 3 1MRK504116-UUS C IED application When single-pole tripping schemes are used a single-phase autoreclosing attempt is expected to follow. For cases where the autoreclosing is not in service or will not follow for some reason, the input Prepare Three-pole Trip P3PTR must be activated. This is normally connected to the respective output on the Synchronism check, energizing check, and synchronizing function SESRSYN (25) but can also be connected to other signals, for example an external logic signal.
Page 745 Section 3 1MRK504116-UUS C IED application Distance protection zone 2 TRIP Distance protection zone 3 TRIP SMPPTRC (94) Overcurrent protection TRIP BLOCK TRIP BLKLKOUT TR_A TRIN_3P TR_B Distance protection zone 1 TRIP TRINP_A TR_C TRIN_B TR1P Phase Selection TRINL3 TR2P TR3P PS_A PS_A...
Page 746: Setting Guidelines
Section 3 1MRK504116-UUS C IED application will result in lock-out. This is normally the case for overhead line protection where most faults are transient. Unsuccessful autoreclose and back-up zone tripping can in such cases be connected to initiate Lock-out by activating the input SETLKOUT. Blocking of the function block The function block can be blocked in two different ways.
Page 747: Setting Parameters
Section 3 1MRK504116-UUS C IED application 3.14.1.3 Setting parameters Table 201: SMPPTRC (94) Group settings (basic) Name Values (Range) Unit Step Default Description Operation Disabled Enabled Disable/Enable Operation Enabled Program 3 phase 1p/3p Three pole; single or three pole; single, two or 1p/3p three pole trip 1p/2p/3p...
Page 748: Setting Parameters
Section 3 1MRK504116-UUS C IED application PulseTime: Defines the pulse time delay. When used for direct tripping of circuit breaker(s) the pulse time delay shall be set to approximately 0.150 seconds in order to obtain satisfactory minimum duration of the trip pulse to the circuit breaker trip coils. OnDelay: Used to prevent output signals to be given for spurious inputs.
Page 749: Setting Parameters
Section 3 1MRK504116-UUS C IED application For controllable gates, settable timers and SR flip-flops with memory, the setting parameters are accessible via the local HMI or via the PST tool. Configuration Logic is configured using the ACT configuration tool in PCM600. Execution of functions as defined by the configurable logic blocks runs according to a fixed sequence with different cycle times.
Page 750: Fixed Signal Function Block Fxdsign
Section 3 1MRK504116-UUS C IED application Table 205: PULSETIMER Non group settings (basic) Name Values (Range) Unit Step Default Description 0.000 - 90000.000 0.001 0.010 Time delay of function Table 206: SRMEMORY Group settings (basic) Name Values (Range) Unit Step Default Description Memory...
Page 751 Section 3 1MRK504116-UUS C IED application Example for use of GRP_OFF signal in FXDSIGN The Restricted earth fault function REFPDIF (87N) can be used both for auto- transformers and normal transformers. When used for auto-transformers, information from both windings parts, together with the neutral point current, needs to be available to the function.
Page 752: Setting Parameters
Section 3 1MRK504116-UUS C IED application 3.14.4.2 Setting parameters The function does not have any parameters available in Local HMI or Protection and Control IED Manager (PCM 600) 3.14.5 Boolean 16 to Integer conversion B16I Function description IEC 61850 IEC 60617 ANSI/IEEE C37.2 identification identification...
Page 753: Setting Guidelines
Section 3 1MRK504116-UUS C IED application 3.14.6.2 Setting guidelines The function does not have any parameters available in the local HMI or Protection and Control IED Manager (PCM600). 3.14.7 Integer to Boolean 16 conversion IB16 Function description IEC 61850 IEC 60617 ANSI/IEEE C37.2 identification identification...
Page 754: Setting Parameters
Section 3 1MRK504116-UUS C IED application 3.14.8.2 Setting parameters The function does not have any parameters available in the local HMI or Protection and Control IED Manager (PCM600) 3.15 Monitoring 3.15.1 Measurement Function description IEC 61850 IEC 60617 ANSI/IEEE C37.2 identification identification device number...
Page 755 Section 3 1MRK504116-UUS C IED application example, via IEC 61850. The possibility to continuously monitor measured values of active power, reactive power, currents, voltages, frequency, power factor etc. is vital for efficient production, transmission and distribution of electrical energy. It provides to the system operator fast and easy overview of the present status of the power system.
Page 756: Zero Clamping
Section 3 1MRK504116-UUS C IED application The power system quantities provided, depends on the actual hardware, (TRM) and the logic configuration made in PCM600. The measuring functions CMSQI and VMSQI provide sequence component quantities: • I: sequence currents (positive, zero, negative sequence, magnitude and angle) •...
Page 757: Setting Guidelines
Section 3 1MRK504116-UUS C IED application It can be seen that: • When system voltage falls below UGenZeroDB, the shown value for S, P, Q, PF, ILAG, ILEAD, U and F on the local HMI is forced to zero • When system current falls below IGenZeroDB, the shown value for S, P, Q, PF, ILAG, ILEAD, U and F on the local HMI is forced to zero •...
Page 758 Section 3 1MRK504116-UUS C IED application VBase: Base voltage in primary kV. This voltage is used as reference for voltage setting. It can be suitable to set this parameter to the rated primary voltage supervised object. IBase: Base current in primary A. This current is used as reference for current setting. It can be suitable to set this parameter to the rated primary current of the supervised object.
Page 759 Section 3 1MRK504116-UUS C IED application Xmin: Minimum value for analog signal X set directly in applicable measuring unit. Xmax: Maximum value for analog signal X. XZeroDb: Zero point clamping. A signal value less than XZeroDb is forced to zero. Observe the related zero point clamping settings in Setting group N for CVMMXN (VGenZeroDb and IGenZeroDb).
Page 760 Section 3 1MRK504116-UUS C IED application Magnitude % of In compensation IMagComp5 Measured current IMagComp30 IMagComp100 % of In 0-5%: Constant 5-30-100%: Linear >100%: Constant Angle Degrees compensation Measured IAngComp30 current IAngComp5 IAngComp100 % of In ANSI05000652_3_en.vsd ANSI05000652 V3 EN Figure 305: Calibration curves Setting examples...
Page 761 Section 3 1MRK504116-UUS C IED application Measurement function application for a 380 kV OHL Single line diagram for this application is given in figure 306: 380kV Busbar 800/5 A 380kV 120V 380kV OHL ANSI09000039-1-en.vsd ANSI09000039 V1 EN Figure 306: Single line diagram for 380 kV OHL application In order to monitor, supervise and calibrate the active and reactive power as indicated in figure it is necessary to do the following:...
Page 762 Section 3 1MRK504116-UUS C IED application Table 210: General settings parameters for the Measurement function Setting Short Description Selected Comments value Operation Operation Off/On Function must be PowAmpFact Amplitude factor to scale power 1.000 It can be used during commissioning calculations to achieve higher measurement accuracy.
Page 763 Section 3 1MRK504116-UUS C IED application Setting Short Description Selected Comments value PLowLim Low limit (physical value) -800 Low warning limit. Not active PLowLowlLim Low Low limit (physical value) -800 Low alarm limit. Not active PLimHyst Hysteresis value in % of range Set ±Δ...
Page 764 Section 3 1MRK504116-UUS C IED application 132kV Busbar 200/5 31.5 MVA 500/5 33kV 120V 33kV Busbar ANSI09000040-1-en.vsd ANSI09000040 V1 EN Figure 307: Single line diagram for transformer application In order to measure the active and reactive power as indicated in figure 307, it is necessary to do the following: Set correctly all CT and VT and phase angle reference channel PhaseAngleRef (see section...
Page 765 Section 3 1MRK504116-UUS C IED application Table 213: General settings parameters for the Measurement function Setting Short description Selected Comment value Operation Disabled / Enabled Enabled Enabled Operation Function must be PowAmpFact Magnitude factor to scale power 1.000 Typically no scaling is required calculations PowAngComp Angle compensation for phase...
Page 766 Section 3 1MRK504116-UUS C IED application 230kV Busbar 300/5 100 MVA 15/0.12kV AB , 100 MVA 15.65kV 4000/5 ANSI09000041-1-en.vsd ANSI09000041 V1 EN Figure 308: Single line diagram for generator application In order to measure the active and reactive power as indicated in figure 308, it is necessary to do the following: Set correctly all CT and VT data and phase angle reference channel PhaseAngleRef(see section...
Page 767: Setting Parameters
Section 3 1MRK504116-UUS C IED application Table 214: General settings parameters for the Measurement function Setting Short description Selected Comment value Operation Operation Off/On Function must be PowAmpFact Amplitude factor to scale power 1.000 Typically no scaling is required calculations PowAngComp Angle compensation for phase Typically no angle compensation is...
Page 768 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description QRepTyp Cyclic Cyclic Reporting type Dead band Int deadband PFMin -1.000 - 1.000 0.001 -1.000 Minimum value PFMax -1.000 - 1.000 0.001 1.000 Maximum value PFRepTyp Cyclic Cyclic Reporting type Dead band...
Page 769 Section 3 1MRK504116-UUS C IED application Table 216: CVMMXN Non group settings (advanced) Name Values (Range) Unit Step Default Description SDbRepInt 1 - 300 Type Cycl: Report interval (s), Db: In % of range, Int Db: In %s SZeroDb 0 - 100000 Zero point clamping in 0.001% of range SHiHiLim 0.0 - 2000.0...
Page 770 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description VLowLim 0.0 - 200.0 80.0 Low limit in % of UBase VLowLowLim 0.0 - 200.0 60.0 Low Low limit in % of UBase VLimHyst 0.000 - 100.000 0.001 5.000 Hysteresis value in % of range (common for...
Page 771 Section 3 1MRK504116-UUS C IED application Table 217: CMMXU Non group settings (basic) Name Values (Range) Unit Step Default Description IA_DbRepInt 1 - 300 Type Cycl: Report interval (s), Db: In % of range, Int Db: In %s Operation Disabled Disabled Disbled/Enabled operation Enabled...
Page 772 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description IA_LowLim 0.000 - 0.001 0.000 Low limit (physical value) 10000000000.000 IA_LowLowLim 0.000 - 0.001 0.000 Low Low limit (physical value) 10000000000.000 IMagComp100 -10.000 - 10.000 0.001 0.000 Magnitude factor to calibrate current at 100% of In IAngComp5...
Page 773 Section 3 1MRK504116-UUS C IED application Table 219: VNMMXU Non group settings (basic) Name Values (Range) Unit Step Default Description VA_DbRepInt 1 - 300 Type Cycl: Report interval (s), Db: In % of range, Int Db: In %s Operation Disabled Disabled Disbled/Enabled operation Enabled...
Page 774 Section 3 1MRK504116-UUS C IED application Table 220: VNMMXU Non group settings (advanced) Name Values (Range) Unit Step Default Description VA_ZeroDb 0 - 100000 Zero point clamping in 0.001% of range VA_HiHiLim 0.000 - 0.001 260000.000 High High limit (physical value) 10000000000.000 VA_HiLim 0.000 -...
Page 775 Section 3 1MRK504116-UUS C IED application Table 221: VMMXU Non group settings (basic) Name Values (Range) Unit Step Default Description VAB_DbRepInt 1 - 300 Type Cycl: Report interval (s), Db: In % of range, Int Db: In %s Operation Disabled Disabled Disbled/Enabled operation Enabled...
Page 776 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description VMagComp100 -10.000 - 10.000 0.001 0.000 Magnitude factor to calibrate voltage at 100% of Vn VAB_Min 0.000 - 0.001 0.000 Minimum value 10000000000.000 VAB_LimHys 0.000 - 100.000 0.001 5.000 Hysteresis value in % of range and is...
Page 777 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description 3I0RepTyp Cyclic Cyclic Reporting type Dead band Int deadband 3I0LimHys 0.000 - 100.000 0.001 5.000 Hysteresis value in % of range and is common for all limits 3I0AngDbRepInt 1 - 300 Type...
Page 778 Section 3 1MRK504116-UUS C IED application Table 224: CMSQI Non group settings (advanced) Name Values (Range) Unit Step Default Description 3I0ZeroDb 0 - 100000 Zero point clamping in 0.001% of range 3I0HiHiLim 0.000 - 0.001 900.000 High High limit (physical value) 10000000000.000 3I0HiLim 0.000 -...
Page 779 Section 3 1MRK504116-UUS C IED application Table 225: VMSQI Non group settings (basic) Name Values (Range) Unit Step Default Description 3V0DbRepInt 1 - 300 Type Cycl: Report interval (s), Db: In % of range, Int Db: In %s 3V0Min 0.000 - 0.001 0.000 Minimum value...
Page 780 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description V2LimHys 0.000 - 100.000 0.001 5.000 Hysteresis value in % of range and is common for all limits V2AngDbRepInt 1 - 300 Type Cycl: Report interval (s), Db: In % of range, Int Db: In %s V2AngMin -180.000 - 180.000...
Page 781: Event Counter Cntggio
Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description V2ZeroDb 0 - 100000 Zero point clamping in 0.001% of range V2HiHiLim 0.000 - 0.001 260000.000 High High limit (physical value) 10000000000.000 V2HiLim 0.000 - 0.001 240000.000 High limit (physical value) 10000000000.000 V2LowLim...
Page 782: Introduction
Section 3 1MRK504116-UUS C IED application 3.15.3.1 Introduction When using a Substation Automation system with LON or SPA communication, time- tagged events can be sent at change or cyclically from the IED to the station level. These events are created from any available signal in the IED that is connected to the Event function (EVENT).
Page 783: Setting Parameters
Section 3 1MRK504116-UUS C IED application 3.15.3.3 Setting parameters Table 227: EVENT Non group settings (basic) Name Values (Range) Unit Step Default Description SPAChannelMask Disabled Disabled SPA channel mask Channel 1-8 Channel 9-16 Channel 1-16 LONChannelMask Disabled Disabled LON channel mask Channel 1-8 Channel 9-16 Channel 1-16...
Page 784 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description EventMask9 NoEvents AutoDetect Reporting criteria for input 9 OnSet OnReset OnChange AutoDetect EventMask10 NoEvents AutoDetect Reporting criteria for input 10 OnSet OnReset OnChange AutoDetect EventMask11 NoEvents AutoDetect Reporting criteria for input 11 OnSet OnReset...
Page 785: Logical Signal Status Report Binstatrep
Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description MinRepIntVal10 0 - 3600 Minimum reporting interval input 10 MinRepIntVal11 0 - 3600 Minimum reporting interval input 11 MinRepIntVal12 0 - 3600 Minimum reporting interval input 12 MinRepIntVal13 0 - 3600 Minimum reporting interval input 13...
Page 786: Setting Guidelines
Section 3 1MRK504116-UUS C IED application 3.15.4.2 Setting guidelines The pulse time t is the only setting for the Logical signal status report (BINSTATREP). Each output can be set or reset individually, but the pulse time will be the same for all outputs in the entire BINSTATREP function.
Page 787: Application
Section 3 1MRK504116-UUS C IED application Function description IEC 61850 IEC 60617 ANSI/IEEE C37.2 identification identification device number Analog input signals A41RADR Disturbance report DRPRDRE Disturbance report A1RADR Disturbance report A4RADR Disturbance report B1RBDR 3.15.6.1 Application To get fast, complete and reliable information about disturbances in the primary and/or in the secondary system it is very important to gather information on fault currents, voltages and events.
Page 788: Setting Guidelines
Section 3 1MRK504116-UUS C IED application (using WaveWin, that can be found on the PCM600 installation CD). The user can also upload disturbance report files using FTP or MMS (over 61850–8–1) clients. If the IED is connected to a station bus (IEC 61850-8-1), the disturbance recorder (record made and fault number) and the fault locator information are available as GOOSE or Report Control data.
Page 789 Section 3 1MRK504116-UUS C IED application A1-4RADR Disturbance Report A4RADR DRPRDRE Analog signals Trip value rec B1-6RBDR Disturbance recorder Binary signals B6RBDR Sequential of events Event recorder Indications ANSI09000337-1-en.vsd ANSI09000337 V1 EN Figure 310: Disturbance report functions and related function blocks For Disturbance report function there are a number of settings which also influences the sub-functions.
Page 790 Section 3 1MRK504116-UUS C IED application Operation The operation of Disturbance report function DRPRDRE has to be set Enabled or Disabled. If Disabled is selected, note that no disturbance report is registered, and none sub-function will operate (the only general parameter that influences Sequential of events (SOE)).
Page 791 Section 3 1MRK504116-UUS C IED application Postfault recording time (PostFaultRecT) is the maximum recording time after the disappearance of the trig-signal (does not influence the Trip value recorder (TVR) function). Recording time limit (TimeLimit) is the maximum recording time after trig. The parameter limits the recording time if some trigging condition (fault-time) is very long or permanently set (does not influence the Trip value recorder (TVR) function).
Page 792 Section 3 1MRK504116-UUS C IED application Info103N: Information number (0-255) for binary input N according to IEC-60870-5-103, that is, 69-71: Trip L1-L3, 78-83: Zone 1-6. See also description in the chapter IEC 60870-5-103. Analog input signals Up to 40 analog signals can be selected among internal analog and analog input signals.
Page 793 Section 3 1MRK504116-UUS C IED application If OperationM = Disabled, no waveform (samples) will be recorded and reported in graph. However, Trip value, pre-fault and fault value will be recorded and reported. The input channel can still be used to trig the disturbance recorder. If OperationM = Enabled, waveform (samples) will also be recorded and reported in graph.
Page 794: Setting Parameters
Section 3 1MRK504116-UUS C IED application Remember that values of parameters set elsewhere are linked to the information on a report. Such parameters are, for example, station and object identifiers, CT and VT ratios. 3.15.6.3 Setting parameters Table 229: DRPRDRE Non group settings (basic) Name Values (Range) Unit...
Page 795 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description Operation03 Disabled Disabled Operation On/Off Enabled NomValue03 0.0 - 999999.9 Nominal value for analog channel 3 UnderTrigOp03 Disabled Disabled Use under level trig for analog cha 3 (on) or Enabled not (off) UnderTrigLe03...
Page 796 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description UnderTrigOp07 Disabled Disabled Use under level trig for analog cha 7 (on) or Enabled not (off) UnderTrigLe07 0 - 200 Under trigger level for analog cha 7 in % of signal OverTrigOp07 Disabled...
Page 797 Section 3 1MRK504116-UUS C IED application Table 231: A4RADR Non group settings (basic) Name Values (Range) Unit Step Default Description Operation31 Disabled Disabled Operation On/off Enabled NomValue31 0.0 - 999999.9 Nominal value for analog channel 31 UnderTrigOp31 Disabled Disabled Use under level trig for analog cha 31 (on) or Enabled not (off) UnderTrigLe31...
Page 798 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description OverTrigLe34 0 - 5000 Over trigger level for analog cha 34 in % of signal Operation35 Disabled Disabled Operation On/off Enabled NomValue35 0.0 - 999999.9 Nominal value for analog channel 35 UnderTrigOp35 Disabled Disabled...
Page 799 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description OverTrigLe38 0 - 5000 Over trigger level for analog cha 38 in % of signal Operation39 Disabled Disabled Operation On/off Enabled NomValue39 0.0 - 999999.9 Nominal value for analog channel 39 UnderTrigOp39 Disabled Disabled...
Page 800 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description Operation03 Disabled Disabled Trigger operation On/Off Enabled TrigLevel03 Trig on 0 Trig on 1 Trig on positiv (1) or negative (0) slope for Trig on 1 binary inp 3 IndicationMa03 Hide Hide...
Page 801 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description IndicationMa08 Hide Hide Indication mask for binary channel 8 Show SetLED08 Disabled Disabled Set red-LED on HMI for binary channel 8 Enabled Operation09 Disabled Disabled Trigger operation On/Off Enabled TrigLevel09 Trig on 0...
Page 802 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description Operation14 Disabled Disabled Trigger operation On/Off Enabled TrigLevel14 Trig on 0 Trig on 1 Trig on positiv (1) or negative (0) slope for Trig on 1 binary inp 14 IndicationMa14 Hide Hide...
Page 803 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description FUNT11 0 - 255 FunT Function type for binary channel 11 (IEC -60870-5-103) FUNT12 0 - 255 FunT Function type for binary channel 12 (IEC -60870-5-103) FUNT13 0 - 255 FunT Function type for binary channel 13 (IEC...
Page 804: Sequential Of Events
Section 3 1MRK504116-UUS C IED application 3.15.7 Sequential of events 3.15.7.1 Application From an overview perspective, continuous event-logging is a useful system monitoring instrument and is a complement to specific disturbance recorder functions. The event list (EL), always included in the IED, logs all selected binary input signals connected to the Disturbance report function.
Page 805: Setting Guidelines
Section 3 1MRK504116-UUS C IED application during a disturbance. The status changes are logged during the entire recording time, which depends on the set of recording times (pre-, post-fault and limit time) and the actual fault time. The indications are not time-tagged. The indication information is available for each of the recorded disturbances in the IED and the user may use the local HMI to view the information.
Page 806: Setting Guidelines
Section 3 1MRK504116-UUS C IED application The event recorder information is available for each of the recorded disturbances in the IED and the user may use the local HMI to get the information. The information is included in the disturbance recorder file, which may be uploaded to PCM600 and further analyzed using the Disturbance Handling tool.
Page 807: Setting Guidelines
Section 3 1MRK504116-UUS C IED application 3.15.10.2 Setting guidelines The trip value recorder (TVR) setting parameters are a part of the disturbance report settings. For the trip value recorder (TVR) there is one dedicated setting: ZeroAngleRef: The parameter defines which analog signal to use as phase-angle reference for all other input signals.
Page 808: Setting Guidelines
Section 3 1MRK504116-UUS C IED application recordings. The disturbance recording information is included in the disturbance recorder files, which may be uploaded to PCM600 for further analysis using the Disturbance Handling tool. The information is also available on a station bus according to IEC 61850 and according to IEC 60870-5-103.
Page 809: Setting Guidelines
Section 3 1MRK504116-UUS C IED application system as a service value. When using IEC 61850–8–1, a scaled service value is available over the station bus. The normal use for this function is the counting of energy pulses from external energy meters.
Page 810: Function For Energy Calculation And Demand Handling Etpmmtr
Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description Scale 1.000 - 90000.000 0.001 1.000 Scaling value for SCAL_VAL output to unit per counted value Quantity Count Count Measured quantity for SCAL_VAL output ActivePower ApparentPower ReactivePower ActiveEnergy ApparentEnergy ReactiveEnergy...
Page 811: Setting Guidelines
Section 3 1MRK504116-UUS C IED application display editor tool (GDE) with a measuring value which is selected to the active and reactive component as preferred. All four values can also be presented. Maximum demand values are presented in MWh or MVarh in the same way. Alternatively, the values can be presented with use of the pulse counters function (PCGGIO).
Page 812: Setting Parameters
Section 3 1MRK504116-UUS C IED application ERFAccPlsQty and ERVAccPlsQty : gives the MVarh value in each pulse. It should be selected together with the setting of the Pulse counter (PCGGIO) settings to give the correct total pulse value. For the advanced user there are a number of settings for direction, zero clamping, max limit, and so on.
Page 813 Section 3 1MRK504116-UUS C IED application Name Values (Range) Unit Step Default Description LevZeroClampP 0.001 - 10000.000 0.001 10.000 Zero point clamping level at active Power LevZeroClampQ 0.001 - 10000.000 MVAr 0.001 10.000 Zero point clamping level at reactive Power EAFPrestVal 0.000 - 10000.000 0.001...
Page 815: Overview
Section 4 1MRK504116-UUS C Station communication Section 4 Station communication About this chapter This chapter describes the communication possibilities in a SA-system. Overview Each IED is provided with a communication interface, enabling it to connect to one or many substation level systems or equipment, either on the Substation Automation (SA) bus or Substation Monitoring (SM) bus.
Page 816 Section 4 1MRK504116-UUS C Station communication Figure 312 shows the topology of an IEC 61850–8–1 configuration. IEC 61850–8–1 specifies only the interface to the substation LAN. The LAN itself is left to the system integrator. Engineering Station HSI Workstation Gateway Base System Printer KIOSK 3...
Page 817: Setting Guidelines
Section 4 1MRK504116-UUS C Station communication Station HSI MicroSCADA Gateway GOOSE Control Protection Control and protection Control Protection en05000734.vsd IEC05000734 V1 EN Figure 313: Example of a broadcasted GOOSE message 4.2.2 Setting guidelines There are two settings related to the IEC 61850–8–1 protocol: Operation User can set IEC 61850 communication to Enabled or Disabled.
Page 818: Iec 61850 Generic Communication I/O Functions Spggio Sp16Ggio
Section 4 1MRK504116-UUS C Station communication 4.2.4 IEC 61850 generic communication I/O functions SPGGIO, SP16GGIO 4.2.4.1 Application IEC 61850–8–1 generic communication I/O functions (SPGGIO) function is used to send one single logical output to other systems or equipment in the substation. It has one visible input, that should be connected in ACT tool.
Page 819: Setting Parameters
Section 4 1MRK504116-UUS C Station communication 4.2.5.3 Setting parameters Table 238: MVGGIO Non group settings (basic) Name Values (Range) Unit Step Default Description MV db 1 - 300 Type Cycl: Report interval (s), Db: In % of range, Int Db: In %s MV zeroDb 0 - 100000 Zero point clamping in 0.001% of range...
Page 820 Section 4 1MRK504116-UUS C Station communication Station Control System Redundancy Supervision Data Data Switch A Switch B Data Data Configuration DUODRV PRPSTATUS IEC09000758-2-en.vsd IEC09000758 V2 EN Figure 314: Redundant station bus Application manual...
Page 821: Setting Guidelines
Section 4 1MRK504116-UUS C Station communication 4.2.6.2 Setting guidelines Redundant communication (DUODRV) is configured in the local HMI under Main menu/Settings/General settings/Communication/Ethernet configuration/Rear OEM - Redundant PRP The settings can then be viewed, but not set, in the Parameter Setting tool in PCM600 under Main menu/IED Configuration/Communication/Ethernet configuration/ DUODRV: Operation: The redundant communication will be activated when this parameter is set...
Page 822: Setting Parameters
Section 4 1MRK504116-UUS C Station communication IEC10000057-1-en.vsd IEC10000057 V1 EN Figure 315: PST screen: DUODRV Operation is set to On, which affect Rear OEM - Port AB and CD which are both set to Duo 4.2.6.3 Setting parameters Table 239: DUODRV Non group settings (basic) Name Values (Range)
Page 823: Iec 61850-9-2Le Communication Protocol
Section 4 1MRK504116-UUS C Station communication IEC 61850-9-2LE communication protocol 4.3.1 Introduction Every IED can be provided with a communication interface enabling it to connect to a process bus, in order to get data from analog data acquisition units close to the process (primary apparatus), commonly known as Merging Units (MU).
Page 824 Section 4 1MRK504116-UUS C Station communication IEC06000537 V1 EN Figure 316: Example of a station configuration with separated process bus and station bus The IED can get analog values simultaneously from a classical CT or VT and from a Merging Unit, like in this example: The merging units (MU) are called so because they can gather analog values from one or more measuring transformers, sample the data and send the data over process bus to other clients (or subscribers) in the system.
Page 825 Section 4 1MRK504116-UUS C Station communication Station Wide Station Wide SCADA System GPS Clock IEC61850-8-1 Splitter Electrical-to- Optical Converter IEC61850-8-1 110 V Other 1PPS Relays IEC61850-9-2LE Ethernet Switch IEC61850-9-2LE 1PPS Merging Unit Combi Sensor Conventional VT en08000069-3.vsd IEC08000069 V2 EN Figure 317: Example of a station configuration with the IED receiving analog values from both classical measuring transformers and merging units.
Page 826: Setting Guidelines
Section 4 1MRK504116-UUS C Station communication 4.3.2 Setting guidelines There are several settings related to the Merging Units in local HMI under: Main menu\Settings\General Settings\Analog Modules\Merging Unit x where x can take the value 1,2 or 3. 4.3.2.1 Specific settings related to the IEC 61850-9-2LE communication The process bus communication IEC 61850-9-2LE have specific settings, similar to the analog inputs modules.
Page 827: Functions When Using Signals From Iec 61850-9-2Le Communication
Section 4 1MRK504116-UUS C Station communication 4.3.2.2 Consequence on accuracy for power measurement functions when using signals from IEC 61850-9-2LE communication The Power measurement functions (CVMMXN, CMMXU, VMMXU and VNMMXU) contains correction factors to account for the non-linearity in the input circuits, mainly in the input transformers, when using direct analogue connection to the IED.
Page 828 Section 4 1MRK504116-UUS C Station communication Function description IEC 61850 identification Function description IEC 61850 identification Current reversal and ECRWPSCH Fuse failure supervision SDDRFUF weakend infeed logic for residual overcurrent protection Four step residual EF4PTOC Sensitive Directional SDEPSDE overcurrent protection residual over current and power protetcion Instantaneous residual...
Page 829 Section 4 1MRK504116-UUS C Station communication Function description IEC 61850 identification Function description IEC 61850 identification Zero sequence LCZSPTOC Directional impedance ZDMRDIR overcurrent protection element for mho characteristic Zero sequence LCZSPTOV Directional impedance ZDRDIR overvoltage protection quadrilateral LDLPDIF Directional impedance ZDSRDIR quadrilateral, including series compensation...
Page 830: Setting Examples For Iec 61850-9-2Le And Time Synchronization
Section 4 1MRK504116-UUS C Station communication 4.3.2.4 Setting examples for IEC 61850-9-2LE and time synchronization It is important that the IED and the merging units (MU) uses the same time reference. This is especially true if analog data is used from several sources, for example an internal TRM and a MU.
Page 831 Section 4 1MRK504116-UUS C Station communication • HwSyncSrc: set to PPS since this is what is generated by the MU (ABB MU) • AppSynch : set to Synch, since protection functions should be blocked in case of loss of timesynchronization •...
Page 832 Section 4 1MRK504116-UUS C Station communication PPS / IRIG-B IEC 61850-9-2LE data STATION CLOCK IEC10000074-1-en.vsd IEC10000074 V1 EN Figure 320: Setting example with external synchronization Settings in local HMI under Settings/Time/Synchronization/TIMESYNCHGEN/ IEC 61850-9-2: • HwSyncSrc : set to PPS/IRIG-B depending on available outputs on the clock •...
Page 833 Section 4 1MRK504116-UUS C Station communication will block the protection functions after maximum 4 seconds after an interruption in the PPS fiber communication from the MU. • SYNCH signal on the MU_4I_4U function block indicate that protection functions are blocked by loss of internal time synchronization to the IED (that is loss of the HW-synchSrc).
Page 834: Setting Parameters
Section 4 1MRK504116-UUS C Station communication • SyncMode: set to NoSynch. This means that the IED do not care if the MU indicates loss of time synchronization. • TSYNCERR signal will not be set since there is no configured time synchronization source •...
Page 835: Lon Communication Protocol
Section 4 1MRK504116-UUS C Station communication LON communication protocol 4.4.1 Application Control Center Station HSI MicroSCADA Gateway Star coupler RER 111 IEC05000663-1-en.vsd IEC05000663 V2 EN Figure 322: Example of LON communication structure for a substation automation system An optical network can be used within the substation automation system. This enables communication with the IEDs in the 670 series through the LON bus from the operator’s workplace, from the control center and also from other IEDs via bay-to-bay horizontal communication.
Page 836: Setting Parameters
Section 4 1MRK504116-UUS C Station communication The LON Protocol The LON protocol is specified in the LonTalkProtocol Specification Version 3 from Echelon Corporation. This protocol is designed for communication in control networks and is a peer-to-peer protocol where all the devices connected to the network can communicate with each other directly.
Page 837: Spa Communication Protocol
Section 4 1MRK504116-UUS C Station communication Table 245: ADE Non group settings (basic) Name Values (Range) Unit Step Default Description Operation Disabled Disabled Operation Enabled TimerClass Slow Slow Timer class Normal Fast SPA communication protocol 4.5.1 Application SPA communication protocol as an alternative to IEC 60870-5-103. The same communication port as for IEC 60870-5-103 is used.
Page 838 Section 4 1MRK504116-UUS C Station communication Remote monitoring Local monitoring system with system with PCM600 PCM600 Telephone Telephone modem modem Optical to electrical converter , e.g . SPA - ZC 22 en 05000672 _ansi . vsd or Fiberdata modem ANSI05000672 V2 EN Figure 323: SPA communication structure for a monitoring system.
Page 839: Setting Guidelines
Section 4 1MRK504116-UUS C Station communication The SPA communication is mainly used for the Station Monitoring System. It can include different IEDs with remote communication possibilities. Connection to a computer (PC) can be made directly (if the PC is located in the substation) or by telephone modem through a telephone network with ITU (former CCITT) characteristics or via a LAN/WAN connection.
Page 840: Setting Parameters
Section 4 1MRK504116-UUS C Station communication station, although different baud rates in a loop are possible. If different baud rates in the same fibre optical loop or RS485 network are used, consider this when making the communication setup in the communication master, the PC. For local fibre optic communication, 19200 or 38400 baud is the normal setting.
Page 841: Iec 60870-5-103 Communication Protocol
Section 4 1MRK504116-UUS C Station communication IEC 60870-5-103 communication protocol 4.6.1 Application TCP/IP Control Station Center Gateway Star coupler RER 125 en 05000660 _ ansi. vsd ANSI05000660 V3 EN Figure 325: Example of IEC 60870-5-103 communication structure for a substation automation system IEC 60870-5-103 communication protocol is mainly used when a protection IED communicates with a third party control or monitoring system.
Page 842 Section 4 1MRK504116-UUS C Station communication • Event handling • Report of analog service values (measurands) • Fault location • Command handling • Autorecloser ON/OFF • Teleprotection ON/OFF • Protection ON/OFF • LED reset • Characteristics 1 - 4 (Setting groups) •...
Page 843 Section 4 1MRK504116-UUS C Station communication • IED status indication in monitor direction Function block with defined IED functions in monitor direction, I103IED. This block use PARAMETER as FUNCTION TYPE, and INFORMATION NUMBER parameter is defined for each input signal. •...
Page 844 Section 4 1MRK504116-UUS C Station communication Function block with defined functions for autorecloser indications in monitor direction, I103AR. This block includes the FUNCTION TYPE parameter, and the INFORMATION NUMBER parameter is defined for each output signal. Measurands The measurands can be included as type 3.1, 3.2, 3.3, 3.4 and type 9 according to the standard.
Page 845 Section 4 1MRK504116-UUS C Station communication SLM configuration /Rear optical SPA-IEC-DNP port /Protocol selection to the selected protocol. When the communication protocols have been selected, the IED is automatically restarted. The general settings for IEC 60870-5-103 communication are the following: •...
Page 846: Setting Parameters
Section 4 1MRK504116-UUS C Station communication For each input of the Disturbance recorder function there is a setting for the information number of the connected signal. The information number can be set to any value between 0 and 255. Furthermore, there is a setting on each input of the Disturbance recorder function for the function type.
Page 847 Section 4 1MRK504116-UUS C Station communication Table 249: I103IEDCMD Non group settings (basic) Name Values (Range) Unit Step Default Description FUNTYPE 1 - 255 FunT Function type (1-255) Table 250: I103CMD Non group settings (basic) Name Values (Range) Unit Step Default Description FUNTYPE...
Page 848 Section 4 1MRK504116-UUS C Station communication Name Values (Range) Unit Step Default Description INFNO_6 1 - 255 InfNo Information number for binary input 6 (1-255) INFNO_7 1 - 255 InfNo Information number for binary input 7 (1-255) INFNO_8 1 - 255 InfNo Information number for binary input 8 (1-255) Table 254:...
Page 849: Multiple Command And Transmit Multicmdrcv Multicmdsnd
Section 4 1MRK504116-UUS C Station communication Name Values (Range) Unit Step Default Description RatedV_AB 0.05 - 2000.00 0.05 400.00 Rated voltage for phase-phase A-B RatedV_N 0.05 - 2000.00 0.05 230.00 Rated residual voltage VN RatedP 0.00 - 2000.00 0.05 1200.00 Rated value for active power RatedQ 0.00 - 2000.00...
Page 850: Application
Section 4 1MRK504116-UUS C Station communication 4.7.1 Application The IED can be provided with a function to send and receive signals to and from other IEDs via the interbay bus. The send and receive function blocks has 16 outputs/inputs that can be used, together with the configuration logic circuits, for control purposes within the IED or via binary outputs.
Page 851: Section 5 Remote Communication
Section 5 1MRK504116-UUS C Remote communication Section 5 Remote communication About this chapter This chapter describes the remote end data communication possibilities through binary signal transferring. Binary signal transfer Function description IEC 61850 IEC 60617 ANSI/IEEE C37.2 identification identification device number Binary signal transfer BinSignReceive Binary signal transfer...
Page 852 Section 5 1MRK504116-UUS C Remote communication The protocol used is IEEE/ANSI C37.94. The distance with this solution is typical 110 km/68 miles. en06000519-2.vsd IEC06000519 V2 EN Figure 326: Direct fibre optical connection between two IEDs with LDCM The LDCM can also be used together with an external optical to galvanic G.703 converter or with an alternative external optical to galvanic X.21 converter as shown in figure 327.
Page 853: Setting Guidelines
Section 5 1MRK504116-UUS C Remote communication 5.1.2 Setting guidelines ChannelMode: This parameter can be set Enabled or Disabled. Besides this, it can be set OutOfService which signifies that the local LDCM is out of service. Thus, with this setting, the communication channel is active and a message is sent to the remote IED that the local IED is out of service, but there is no COMFAIL signal and the analog and binary values are sent as zero.
Page 854 Section 5 1MRK504116-UUS C Remote communication GPSSyncErr: If GPS synchronization is lost, the synchronization of the line differential function will continue during 16 s. based on the stability in the local IED clocks. Thereafter the setting Block will block the line differential function or the setting Echo will make it continue by using the Echo synchronization method.
Page 855: Setting Parameters
Section 5 1MRK504116-UUS C Remote communication local communication module, LDCM. The parameter shall be set to 2 when transmitting analog data from the local transformer module, TRM. When a merging unit according to IEC 61850-9-2 is used instead of the TRM this parameter shall be set to 5.
Page 856 Section 5 1MRK504116-UUS C Remote communication Table 264: LDCMRecBinStat2 Non group settings (basic) Name Values (Range) Unit Step Default Description ChannelMode Disabled Enabled Channel mode of LDCM, 0=OFF, 1=ON, Enabled 2=OutOfService OutOfService NAMECH1 0 - 13 LDCM#-CH1 User defined string for analog input 1 TerminalNo 0 - 255 Terminal number used for line differential...
Page 857 Section 5 1MRK504116-UUS C Remote communication Name Values (Range) Unit Step Default Description MaxtDiffLevel 200 - 2000 Maximum time diff for ECHO back-up DeadbandtDiff 200 - 1000 Deadband for t Diff InvertPolX21 Disabled Disabled Invert polarization for X21 communication Enabled Table 265: LDCMRecBinStat3 Non group settings (basic) Name...
Page 858 Section 5 1MRK504116-UUS C Remote communication Name Values (Range) Unit Step Default Description remAinLatency 2 - 20 Analog latency of remote terminal MaxTransmDelay 0 - 40 Max allowed transmission delay CompRange 0-10kA 0-25kA Compression range 0-25kA 0-50kA 0-150kA MaxtDiffLevel 200 - 2000 Maximum time diff for ECHO back-up DeadbandtDiff 200 - 1000...
Page 859: Section 6 Configuration
ABB will of course, on request, be available to support the re-configuration work, either direct or to do the design checking. Optional functions and optional IO ordered will not be configured at delivery. It should...
Page 860: Description Of Configuration Ret670
“standard” functionality. The physical terminals for the configured binary inputs and outputs are found in the connection diagrams for IEC 670 series 1MRK002801-AC. Description of configuration RET670 6.2.1 Introduction The RET 670 comes preconfigured for several applications.
Page 861 Section 6 1MRK504116-UUS C Configuration The Differential protection is the main function. It provides fast and sensitive tripping for internal faults. Stabilization against through faults, inrush and overexcitation are standard features. Restricted earth fault protection of low impedance types are provided for each winding. The low impedance type allows mix of the function on the same core as other protection functions.
Page 862 Section 6 1MRK504116-UUS C Configuration RET 670 50BF TRIP BKR1 WDG1 WDG2 51P/67P TRIP BKR3 50BF 51N/67N VT’s from WDG 2 side of XFRM ANSI10000087-2-en.vsd ANSI10000087 V2 EN Figure 328: Protection functions configured in 2 WDG transformer with single breaker at each winding side Application manual...
Page 863: Description Of Configuration B30
Section 6 1MRK504116-UUS C Configuration 6.2.1.2 Description of configuration B30 This configuration is used in applications with two winding transformers in multi- breaker arrangement on one or both sides. The tripping is three poles and includes also a synchronism check function for manual closing of the low voltage side breaker. The high voltage breaker is foreseen to always energize the transformer and be interlocked with an open LV side breaker.
Page 864: Description Of Configuration B40
Section 6 1MRK504116-UUS C Configuration Trip from 50-BF1, 50-BF2 50/51N 50BF2 50BF1 TRIP BKR1 94/86 50/51P BKR1 BKR2 50/51G TRIP BKR2 94/86 WDG1 WDG2 50/51G 50/51P 50BF4 TRIP BKR3 94/86 BKR4 BKR3 50BF3 TRIP BKR4 50/51N 94/86 VT’s from MV side of XFRM Trip from 50-BF3, 50-BF4 ANSI10000088-3-en.vsd...
Page 865 Section 6 1MRK504116-UUS C Configuration Instantaneous, and time delayed overcurrent protection for phase and ground are provided for each winding. The following protection is also included: • Undervoltage • Overvoltage • Overexcitation • 4 step Over frequency • 4 step under frequency •...
Page 866 The following tables illustrate the external connections for the analog inputs, binary inputs, and binary outputs for each of the configurations. Table 266: Analog input module, Slot p31, Connector X401 Term RET670-B30 RET670-A40 RET670-B40 HV Bkr 1 - I HV Bkr 1 - I...
Page 867 Section 6 1MRK504116-UUS C Configuration Term RET670-B30 RET670-A40 RET670-B40 HV Wdg – I HV Bkr 2 - I HV Bkr 2 - I LV Bkr 3 - I HV Bkr 2 - I HV Bkr 2 - I LV Bkr 3 - I...
Page 868 Section 6 1MRK504116-UUS C Configuration Term RET670-B30 RET670-A40 RET670-B40 LV Bkr 4 - I Not used MV Bkr 4 - I LV Bkr 4 - I Not used MV Bkr 4 - I LV Wdg - I Not used MV Wdg - I...
Page 869 Section 6 1MRK504116-UUS C Configuration Term RET670-A30 RET670-B30 RET670-B40 Bkr3-52b Bkr2-52b Bkr2-52b Bkr3 Alarm Bkr2 Alarm Bkr2 Alarm 43a L_R Bkr3-52a Bkr3-52a BKR1 CLOSE CMD Bkr3-52b Bkr3-52b 1) If 52a contact is used, setting needs to be enabled under Settings/Setting Group/N1/Logic/LogicGate/...
Page 870 Section 6 1MRK504116-UUS C Configuration Term RET670-A30 RET670-B30 RET670-B40 EXTERNAL DFR TRIG BKR1 CLOSE CMD Bkr5-52b EXTERNAL TRIP BKR1 OPEN CMD Bkr5 Alarm BLOCK Not used BKR2 CLOSE CMD 43a L_R Energized input will enable remote (SCADA) OPEN or CLOSE...
Page 871 Section 6 1MRK504116-UUS C Configuration Term RET670-A30 RET670-B30 RET670-B40 Not used LTC SUDDEN BKR4 CLOSE CMD PRESSURE TRIP Not used EXTERNAL DFR TRIG BKR4 OPEN CMD Table 271: Binary input module, Slot p5, Connector X52 Term RET670-A30 RET670-B30 RET670-B40 Not used...
Page 872 Section 6 1MRK504116-UUS C Configuration Table 272: Binary output module, Slot p7, Connector X71 Term RET670-A30 RET670-B30 RET670-B40 TRIP BKR1 TRIP BKR1 TRIP BKR1 CLOSE BKR1 CLOSE BKR1 CLOSE BKR1 TRIP BKR3 TRIP BKR2 TRIP BKR2 CLOSE BKR3 CLOSE BKR2...
Page 873 Section 6 1MRK504116-UUS C Configuration Term RET670-A30 RET670-B30 RET670-B40 Not used Not used Not used Not used Not used Not used Not used Not used Not used Not used Not used Not used The following is the default LED Mapping:...
Page 874 Section 6 1MRK504116-UUS C Configuration Function Name ANSI Number Description IOC2 WDG2 instantaneous overcurrent protection IOC3 WDG3 instantaneous overcurrent protection TOC1 WDG1 time delayed overcurrent protection TOC2 WDG2 time delayed overcurrent protection TOC3 WDG3 time delayed overcurrent protection IEF1 WDG1 neutral instantaneous overcurrent protection IEF2 WDG2 neutral instantaneous overcurrent protection TEF1...
Page 875 Section 6 1MRK504116-UUS C Configuration Function Name Type Description GT02 Logic gate Enable the gate if the transformer is not an autotransformer GT22 Logic gate Enable the gate if WDG1 circuit breaker position input is 52a GT24 Logic gate Enable the gate if WDG2 circuit breaker position input is 52a GT18 Logic gate Enable the gate if WDG3 circuit breaker position input is 52a...
Page 877: Section 7 Glossary
Section 7 1MRK504116-UUS C Glossary Section 7 Glossary About this chapter This chapter contains a glossary with terms, acronyms and abbreviations used in ABB technical documentation. Alternating current Application configuration tool within PCM600 A/D converter Analog-to-digital converter ADBS Amplitude deadband supervision...
Page 878 Section 7 1MRK504116-UUS C Glossary Controller Area Network. ISO standard (ISO 11898) for serial communication Circuit breaker Combined backplane module CCITT Consultative Committee for International Telegraph and Telephony. A United Nations-sponsored standards body within the International Telecommunications Union. CAN carrier module CCVT Capacitive Coupled Voltage Transformer Class C...
Page 879 Section 7 1MRK504116-UUS C Glossary Data flow control Discrete Fourier transform DHCP Dynamic Host Configuration Protocol DIP-switch Small switch mounted on a printed circuit board Digital input DLLB Dead line live bus Distributed Network Protocol as per IEEE Std 1815-2012 Disturbance recorder DRAM Dynamic random access memory...
Page 880 Section 7 1MRK504116-UUS C Glossary Gas-insulated switchgear GOOSE Generic object-oriented substation event Global positioning system GSAL Generic security application GPS Time Module HDLC protocol High-level data link control, protocol based on the HDLC standard HFBR connector type Plastic fiber connector Human-machine interface HSAR High speed autoreclosing...
Page 881 Section 7 1MRK504116-UUS C Glossary One instance of a function is identical to another of the same kind but has a different number in the IED user interfaces. The word "instance" is sometimes defined as an item of information that is representative of a type. In the same way an instance of a function in the IED is representative of a type of function.
Page 882 Section 7 1MRK504116-UUS C Glossary Multifunction vehicle bus. Standardized serial bus originally developed for use in trains. National Control Centre Numerical module OCO cycle Open-close-open cycle Overcurrent protection Optical ethernet module OLTC On-load tap changer Over-voltage Overreach A term used to describe how the relay behaves during a fault condition.
Page 883 Section 7 1MRK504116-UUS C Glossary RS422 A balanced serial interface for the transmission of digital data in point-to-point connections RS485 Serial link according to EIA standard RS485 Real-time clock Remote terminal unit Substation Automation Select-before-operate Switch or push button to close Station control system SCADA Supervision, control and data acquisition...
Page 884 Section 7 1MRK504116-UUS C Glossary TCP/IP Transmission control protocol over Internet Protocol. The de facto standard Ethernet protocols incorporated into 4.2BSD Unix. TCP/IP was developed by DARPA for Internet working and encompasses both network layer and transport layer protocols. While TCP and IP specify two protocols at specific protocol layers, TCP/IP is often used to refer to the entire US Department of Defense protocol suite based upon these, including Telnet, FTP, UDP and RDP.
Page 885 Section 7 1MRK504116-UUS C Glossary Three times zero-sequence current. Often referred to as the residual or the -fault current Three times the zero sequence voltage. Often referred to as the residual voltage or the neutral point voltage Application manual...
Page 888 ABB Inc. 3450 Harvester Road Burlington, ON L7N 3W5, Canada Phone Toll Free: 1-800-HELP-365, menu option #8 ABB Mexico S.A. de C.V. Paseo de las Americas No. 31 Lomas Verdes 3a secc. 53125, Naucalpan, Estado De Mexico, MEXICO Phone (+1) 440-585-7804, menu...

ABB RET670 Applications Manual

Section 1 Introduction

Section 2 Requirements

Section 3 IED Application

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