Panasonic 2SD1820A Specification Sheet

Transistors
2SD1820A
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1219A
 Features
 Low collector-emitter saturation voltage V
 S-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
 Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
 Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
* 1
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
* 2: Rank classification
Rank
h
FE1
Marking symbol
Product of no-rank is not classified and have no marking symbol for rank.
Publication date : October 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
CE(sat)
= 25°C
a
Symbol Rating
V 60
CBO
V 50
CEO
V 5
EBO
I 500
C
I 1
CP
P 150
C
T 150
j
T –55 to +150
stg
= 25°C±3°C
a
Symbol
V I = 10 mA, I
CBO C
V I = 2 mA, I
CEO C
V I = 10 mA, I
EBO E
I V = 20 V, I
CBO CB
* 2
h V = 10 V, I
FE1 CE
h V = 10 V, I
FE2 CE
* 1
V I = 300 mA, I
CE(sat) C
f V = 10 V, I
T CB
C V = 10 V, I
ob CB
Q R
85 to 170 120 to 240
XQ XR
SJC00424AED
 Package
 Code
SMini3-G1
 Pin Name
1. Base
2. Emitter
3. Collector
Unit
V
 Marking Symbol: X
V
V
mA
A
mW
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= 0
E
= 150 mA
C
= 500 mA
C
= 30 mA
B
= –50 mA, f = 200 MHz
E
= 0, f = 1 MHz
E
S No-rank
170 to 340 85 to 340
XS X
Min Typ Max Unit
60
50
5
0.1
85 340
40
0.35 0.60
200 MHz
6 15
V
V
V
mA

V
pF
1