Panasonic 2SD0965 Specification Sheet

Transistors
2SD0965
Silicon NPN epitaxial planar type
For low-frequency power amplification
For stroboscope
■ Features
• Low collector-emitter saturation voltage V
• Satisfactory operation performances at high efficiency with the low-
voltage power supply.
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE1
Publication date: January 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
(2SD965)
CE(sat)
= 25°C
a
Symbol Rating
V 40
CBO
V 20
CEO
V 7
EBO
I 5
C
I 8
CP
P 750
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 1 mA, I
V I
CEO C
= 10 µA, I
V I
EBO E
I V
CBO CB
I V
CEO CE
I V
EBO EB
*
h V
FE1 CE
h V
FE2 CE
= 3 A, I
V I
CE(sat) C
f V
T CB
C V
ob CB
Q R
230 to 380 340 to 600
Note) The part number in the parenthesis shows conventional part number.
Unit
0.45
V
V
V
A
A
mW
°C
°C
Conditions
= 0
B
= 0
C
= 10 V, I = 0
E
= 10 V, I = 0
B
= 7 V, I = 0
C
= 2 V, I = 0.5 A
C
= 2 V, I = 1 A
C
= 0.1 A
B
= 6 V, I = −50 mA, f = 200 MHz
E
= 20 V, I = 0, f = 1 MHz
E
SJC00200BED
5.0 ±0.2
0.7 ±0.1
+0.15 +0.15
0.45
–0.1 –0.1
+0.6 +0.6
2.5 2.5
–0.2 –0.2
1 2 3
TO-92-B1 Package
Min Typ Max
20
7
0.1
1
0.1
230 600
150
0.28 1.00
150
26 50
Unit: mm
4.0 ±0.2
1: Emitter
2: Collector
3: Base
Unit
V
V
µA
µA
µA

V
MHz
pF
1