Panasonic 2SD1824 Specification Sheet

Transistors
2SD1824
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
• High forward current transfer ratio h
• Low collector-emitter saturation voltage V
• High emitter-base voltage (Collector open) V
• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: April 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
FE
CE(sat)
EBO
= 25°C
a
Symbol Rating
V 100
CBO
V 100
CEO
V 15
EBO
I 20
C
I 50
CP
P 150
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 10 µA, I
V I
CBO C
= 1 mA, I
V I
CEO C
= 10 µA, I
V I
EBO E
I V
CBO CB
I V
CEO CE
*
h V
FE CE
= 10 mA, I
V I
CE(sat) C
f V
T CB
R S
400 to 800 600 to 1 200
10°
Unit
V
V
V
mA
Marking symbol: 1V
mA
mW
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= 60 V, I = 0
E
= 60 V, I = 0
B
= 10 V, I = 2 mA
C
= 1 mA
B
= 10 V, I = −2 mA, f = 200 MHz
E
SJC00230BED
+0.1
0.3
–0.0
3
1 2
(0.65) (0.65)
1.3
±0.1
2.0 ±0.2
SMini3-G1 Package
Min Typ Max
100
100
15
0.1
1
400 1 200
0.05 0.20
90
Unit: mm
+0.10
0.15
–0.05
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
Unit
V
V
V
µA
µA

V
MHz
1