Panasonic 2SD0601A Specification Sheet

Transistors
2SD0601A
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB0709A (2SB709A)
■ Features
• High foward current transfer ratio h
• Low collector to emitter saturation voltage V
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cut-off current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Noise voltage
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE1
Marking symbol
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: April 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
(2SD601A)
FE
CE(sat)
= 25°C
a
Symbol Rating
V 60
CBO
V 50
CEO
V
EBO
100
I
C
200
I
CP
P 200
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I
CBO C
V I
CEO C
V I
EBO E
I V
CBO CB
I V
CEO CE
*
h V
FE1 CE
h V
FE2 CE
V I
CE(sat) C
f V
T CB
NV V
CE
R
g
C V
ob CB
Q R
160 to 260 210 to 340
ZQ ZR
Note) The part number in the parenthesis shows conventional part number.
Unit
V
V
7 V
mA
mA
mW
Marking Symbol: Z
°C
°C
Conditions
= 10 µA, I = 0
E
= 2 mA, I = 0
B
= 10 µA, I = 0
C
= 20 V, I = 0
E
= 10 V, I = 0
B
= 10 V, I = 2 mA
C
= 2 V, I = 100 mA
C
= 100 mA, I = 10 mA
B
= 10 V, I = −2 mA, f = 200 MHz
E
= 10 V, I = 1 mA, G = 80 dB
C V
= 100 kΩ, Function = FLAT
= 10 V, I = 0, f = 1 MHz
E
S No-rank
290 to 460 160 to 460
ZS Z
SJC00190BED
+0.10
0.40
–0.05
3
1 2
(0.95) (0.95)
1.9 ±0.1
+0.20
2.90
–0.05
10˚
Mini3-G1 Package
Min Typ
60
50
7
160
90
0.1
150
110
Unit: mm
+0.10
0.16
–0.06
1: Base
2: Emitter
3: Collector
Max Unit
V
V
V
µA
0.1
µA
100

460
0.3 V
MHz
mV
3.5 pF
1