Transistors
2SC6050
Silicon NPN epitaxial planar type
For high frequency amplifi cation, oscillation and mixing
Features
Features
High transition frequency f
High transition frequency f
High transition frequency f
High transition frequency f
T
T
Small collector output capacitance (Common base, input open circuited) C
Small collector output capacitance (Common base, input open circuited) C
and reverse transfer capacitance (Common base) C
Optimum for high-density mounting and downsizing of the equipment for
Optimum for high-density mounting and downsizing of the equipment for
Ultraminiature leadless package
0.6 mm × 1.0 mm (height 0.39 mm)
Absolute Maximum Ratings
Absolute Maximum Ratings
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics
Electrical Characteristics
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Reverse transfer capacitance (Common base)
Collector-base parameter
h
h
h ratio
ratio
FE
FE
FE
FE
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2005
This product complies with the RoHS Directive (EU 2002/95/EC).
rb
T
= 25
= 25
°C
a
a
a
Symbol
Rating
V
15
CBO
V
10
CEO
V
3
EBO
I
50
C
P
100
C
T
T
T
125
j
j
T
T
T
−55 to +125
stg
stg
T
= 25
= 25
°C±3°C
a
a
a
Symbol
V
I
= 2 mA, I
CEO
C
V
I
= 10
= 10
µA, I
EBO
E
E
E
I
V
= 10 V, I
CBO
CB
h
h
h
V
= 4 V, I
= 4 V, I
FE
FE
CE
CE
CE
V
I
= 20 mA, I
CE(sat)
C
f
f
f
V
= 4 V, I
T
T
CB
C
V
= 4 V, I
ob
CB
C
V
= 4 V, I
rb
CB
r
r
r c c
V
= 4 V, I
bb'
bb'
c
CB
V
= 4 V, I
= 4 V, I
CE
CE
CE
∆
∆h
∆h
h
h
FE
FE
5 mA
SJC00335AED
3
ob
1.00
Unit
V
V
1: Base
V
2: Emitter
3: Collector
mA
mW
Marking Symbol: 6N
°C
°C
Conditions
= 0
B
= 0
C
= 0
= 0
E
E
E
= 5 mA
C
= 4 mA
B
=
=
−5 mA, f = 200 MHz
E
E
E
= 0, f = 1 MHz
= 0, f = 1 MHz
E
E
E
= 0, f = 1 MHz
= 0, f = 1 MHz
E
E
E
=
=
−5 mA, f = 31.9 MHz
E
E
E
= 100 µA / V
= 4 V, I
= 4 V, I
=
=
C
CE
CE
CE
C
C
C
Unit: mm
2
1
+0.01
0.39
±0.05
−0.03
0.25
0.25
±0.05
±0.05
1
3
2
0.65
0.05
±0.01
ML3-N2 Package
Min
Typ
Max
Unit
10
3
1
75
400
0.5
1.4
1.9
2.7
GHz
1.4
0.45
11
0.75
1.6
±0.03
V
V
µA
V
pF
pF
ps
1