Panasonic 2SC5950 Specification Sheet

Transistors
2SC5950
Silicon NPN epitaxial planar type
For general amplifi cation
Complementary to 2SA2122
 Features  Features

 High forward current transfer ratio h  High forward current transfer ratio h High forward current transfer ratio h High forward current transfer ratio h

 Smini typ package, allowing downsizing of the equipment and automatic  Smini typ package, allowing downsizing of the equipment and automatic

insertion through the tape packing
 Absolute Maximum Ratings  Absolute Maximum Ratings

Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
 Electrical Characteristics  Electrical Characteristics

Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2005
This product complies with the RoHS Directive (EU 2002/95/EC).
FE FE
T = 25 = 25 °C
a a a
Symbol Rating
V 60
CBO
V 50
CEO
V 7
EBO
I 100
C
I 200
CP
P 150
C
T T T 150
j j
T T T −55 to +150
stg stg
T = 25 = 25 °C±3°C
a a a
Symbol
V I = 10 µA, I
CBO C
V I = 2 mA, I
CEO C
V I = 10 = 10 µA, I
EBO E E E
I V = 20 V, I
CBO CB
I V = 10 V, I = 10 V, I
CEO CE CE CE
h h h V = 10 V, I = 10 V, I
FE FE CE CE CE
V I = 100 mA, I
CE(sat) C
f f f V = 10 V, I
T T CB
C V = 10 V, I
ob CB
SJC00333AED
+0.1
0.3
–0.0
3
1
(0.65) (0.65)
1.3
Unit
2.0
V
10°
V
V
mA
1: Base
2: Emitter
mA
3: Collector
mW
Marking Symbol: 7M
°C
°C
Conditions
= 0 = 0
E E E
= 0
B
= 0
C
= 0 = 0
E E E
= 0
B
= 2 mA
C
= 10 mA
B
= = −2 mA, f = 200 MHz
E E E
= 0, f = 1 MHz = 0, f = 1 MHz
E E E
Unit: mm
+0.10
0.15
–0.05
2
±0.1
±0.2
SMini3-G1 Package
Min Typ Max Unit
60
50
7
0.1 µA
100 µA
160 460 
0.1 0.3
100 MHz
2.2 pF
V
V
V
V
1