Transistors
2SC5609G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SA2021G
Features
High forward current transfer ratio h
Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Pulse measurement
Publication date : November 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
FE
= 25°C
a
Symbol
Rating
V
60
CBO
V
50
CEO
V
7
EBO
I
100
C
I
200
CP
P
100
C
T
125
j
T
–55 to +125
stg
= 25°C±3°C
a
Symbol
V
I
= 10 mA, I
CBO
C
V
I
= 2 mA, I
CEO
C
V
I
= 10 mA, I
EBO
E
I
V
= 20 V, I
CBO
CB
I
V
= 10 V, I
CEO
CE
h
V
= 10 V, I
FE1
CE
h
*
V
= 2 V, I
FE2
CE
V
I
= 100 mA, I
CE(sat)
C
f
V
= 10 V, I
T
CB
C
V
= 10 V, I
re
CB
SJC00427BED
Package
Code
SSSMini3-F2
Pin Name
1. Base
Unit
2. Emitter
V
3. Collector
V
V
Marking Symbol: 3F
mA
mA
mW
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= 0
E
= 0
B
= 2 mA
C
= 100 mA
C
= 10 mA
B
= –2 mA, f = 200 MHz
E
= 0, f = 1 MHz
E
Min
Typ
Max
Unit
60
50
7
0.1
100
180
390
90
0.1
0.3
80
MHz
3.5
V
V
V
mA
mA
V
pF
1