External Memory Interface - LG GT810h Service Manual

3. TECHNICAL BRIEF

3.11 External memory interface

A. MSM7201A
targeted for supporting DDR synchronous memory devices. EBI2 was targeted towards supporting
slower asynchronous devices such as LCD, NAND flash, SRAM, NOR flash etc. To support the high-
bandwidth, high-density, and low-latency requirements of the advanced onchip applications, the
MSM7201A IC has two high-speed, high-performance memory slave interfaces: the external bus
interface 1 (EBI1) and the stack memory interface (SMI). To achieve higher bandwidth and better use
of the memory device interface, the SMI accepts multiple commands for the external memory device.
The SMI interface acts as a slave device to all of the bus masters within the MSM device. The masters
arbitrate to gain access to the SMI, and upon obtaining the access, they issue commands to the SMI.
The bus masters are connected to the SMI through an advanced extensible interface (AXI) bus bridge
(or global interconnect block) and communicate over a 64-bit, non-blocking AXI bus protocol. The AXI
bus bridge provides the arbitration logic for all of the bus masters.
■ EBI1 Features
- Support for only low-power memories at 1.8-V I/O power supply voltage
- AXI bus frequencies up to 133 MHz
- A 16-bit/32-bit static and dynamic memory interface
■ DDR SDRAM interface features include:
- Supports both 32-bit DDR SDRAM devices, up to 133-MHz bus speed
- Supports auto precharge and manual precharge
- Supports partial refresh
- Separate CKE pin per chip-select to support partial operation mode
- Idle power down to save idling power consumption
■ EBI2 Features
- Support for asynchronous FLASH and SRAM(16bit & 8bit).
- Interface support for byte addressable 16bit devices(UB_N & LB_N signals).
- 2Mbytes of memory per chip select.
- Support for 8 bit/16bit wide NAND flash.
- Support for parallel LCD interfaces, port mapped of memory mapped(8 or 16 bit)
■ Multi Chip Package : DDR SDRAM and NAND Flash merged 1 package
■ 1Gbit Mobile DDR SDRAM(32Mb x32) / 2Gbit NAND Flash
Part Name
HYH0SSJ0MF3P-
5L60E
LGE Internal Use Only
Interface Spec
Product Gr Maker
NAND
Hynix
SDRAM
Table#1. External memory interface for GT810h
- 42 -
Operation Voltage
(Flash / DRAM) (Flash / DRAM)
1.8V 45ns / 166MHz (CL3)
1.8V
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