Ac Electrical Characteristics - Philips SA631 Datasheet

Philips Semiconductors
1GHz low voltage LNA and mixer

AC ELECTRICAL CHARACTERISTICS

V = +3.0V, T = 25 C; RF
CC amb IN
SYMBOL SYMBOL PARAMETER PARAMETER
Low Noise Amplifier
f RF input frequency range
RF
S Amplifier gain
21
S Amplifier gain in power-down mode
21
∆S
/∆T Gain temperature sensitivity enabled
21
∆S
/∆f Gain frequency variation
21
S Amplifier reverse isolation
12
S Amplifier input match
11
S Amplifier output match
22
P Amplifier input 1dB gain compression
-1dB
IP3 Amplifier input third order intercept
NF Amplifier noise figure
t Amplifier turn-on time (Enable Lo
ON
t Amplifier turn-off time (Enable Hi
OFF
Mixer
PG Mixer power conversion gain: R
C
S Mixer input match
11M
NF Mixer SSB noise figure
M
P Mixer input 1dB gain compression
-1dB
IP3 Mixer input third order intercept
M
IP Mixer input second order intercept
2INT
P Mixer RF feedthrough
RFM-IF
P LO feedthrough to IF
LO-IF
P LO to mixer input feedthrough
LO-RFM
P LO to LNA input feedthrough
LO-RF
Overall System
G System gain
SYS
1998 Jan 08
= 881MHz, f = 964MHz; unless otherwise stated.
VCO
Hi)
Lo)
= R = 1.2kΩ
P L
TEST CONDITIONS TEST CONDITIONS
800MHz - 1.0GHz
@ 881 MHz
With ext. impedance matching
f = 881MHz, f = 964MHz,
RF LO
f = 83MHz
IF
Ext. impedance matching req.
RF = –32dBm
IN
LO = –0dBm
LNA + Mixer
4
Product specification
SA631
LIMITS
UNITS UNITS
–3s TYP +3s
800 1000 MHz
15 dB
–28 dB
0.006 dB/ C
0.013 dB/MHz
–28 dB
–10 dB
–10 dB
–20 dBm
–7 dBm
1.7 dB
µs
120
µs
0.3
9.6 dB
–10 dB
10 dB
–14.5 dBm
3.3 dBm
38 dBm
–45 dBm
–23 dBm
–32 dBm
–42 dBm
23.9 24.6 25.3 dB