Technical Specifications; General Technical Data; Performance And Technical Characteristics - Sony S312 White Paper

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Technical specifications

General technical data

System
Speech coding
GSM SIM/USIM card
Memory (built-in)
Data transfer speeds

Performance and technical characteristics

Dimension
Frequency range (MHz)
Channel spacing
Number of channels
Modulation
TX phase accuracy
Duplex spacing
Frequency stability
Voltage operation (nominal)
Transmitter RF power output
Transmitter Output impedance
Transmitter Spurious emission
(according to specification)
Receiver RF sensitivity
Receiver RX Bit error rate
Dual band. e-GSM 900, GSM 1800. GPRS and EDGE in all bands.
HR, FR, EFR, AMR supported where available, for high speech quality.
Small plug-in card, 1.8 V and 3 V.
No less than 15 MB internal (depending on software configuration/file
content). Memory Stick Micro™ (M2™) which has a capacity of up to
2GB.
Up to 85.6 Kbps (downlink)
Up to 42.8 Kbps (uplink)
GSM 900/E-GSM 900
TX: 880–915
RX: 925–960
200 kHz
174 Carriers *8 (TDMA)
8PSK/GMSK
< 5º RMS Phase error (burst)
45 MHz
+/- 0.1ppm
3.6 V
33 dBm Class 4
(2 W peak)
50 ohm
< –36 dBm up to 1 GHz
< –30 dBm over 1 GHz
Better than –102 dBm
< 2.4%
20
White paper
GSM 1800
TX: 1710–1785
RX: 1805–1880
200 kHz
374 Carriers *8 (TDMA)
8PSK/GMSK
< 5º RMS Phase error (burst)
95 MHz
+/- 0.1ppm
3.6 V
30 dBm Class 1
(1 W peak)
50 ohm
< –30 dBm
–102 dBm
< 2.4%
September 2009
S312

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