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5. Block Diagrams
5-1. RF Solution Block Diagram
Vc_EGSM
EGSM_TX_MODE_SW
DCS/PCS_TX_MODE_SW
PCS_TX_MODE_SW
VCC_RX_TX
SAMSUNG FEM
FEM4532TBC
(4.5*3.2*1.8mm)
Imax = 10 mA
Freq (MHz)
Insertion Loss
EGSM_TX(880 ? 915)
1.28 dB
EGSM_RX(925 ? 960)
4.0 dB
DCS/PCS_TX(1710 - 1910) 1.5 dB
DCS_RX(1805 -1880)
4.1 dB
PCS_RX(1930 -1990)
4.1 dB
Atten 2xfo : 30dB,25dB(GSM,DCS/PCS)
3xfo : 25dB,25dB(GSM,DCS/PCS)
Ripple in passband = 2.0dB max
Vc_DCS
Vc_PCS
(2.5~3.0V)
Inverter
circuits
Discrete
3
rd
Order
Loop Filter
fc = ? kHz
OFFSET Mixer input power
-16dBm max, -22dBm min
Vcc_Tx_BURST
~
~
MURATE TX VCO
MQW510C869M
GSM
(5.5*4.8*1.5mm)
GSM = 880 ~ 915MHz
(Vt=0.5V ~ 3.0V )
kV = 55+-11 MHz/V Typ
DCS = 1710 ~ 1785MHz
VAPC
(Vt=0.5V ~ 3.0V )
DCS/PCS
kV = 115+-23 MHz/V Typ
Pout= 6.5+-3 dBm typ.,Ic <= 30mA
VBAT
Harmonics <= -10dBc
SKYWORKS PAM
SKY77328-13
(6*6*1.2mm)
GSM: Pout = 35.0 dBm Eff=60%
DCS: Pout= 33.0 dBm Eff = 55%
SAMSUNG Proprietary-Contents may change without notice
This Document can not be used without Samsung's authorization
Vc_PCS
Vc_PCS
QUAD
Vc_PCS
VREG
DIV
Vcc_RF_LO
Vcc_RF_VCO
~
GSM/DCS/PCS
CP
FESW1
FESW2
60/114MHz
CP
PFD
Philips Transceiver
GSM S/W
UAA3536
DCS S/W
VCC_SYN (2.7V , 100mA )
RF1_VDD
VCC_RX_TX (2.7V ,100mA )
RF2_VDD
VCC_RF_VCO (2.7V , 100mA )
RF1_VDDS
VCC_TX_BURST (2.7V , 100mA )
RF2_VDDS
VCC_CP (4.0V , 25mA )
HVS
VDD4 (1.35V min 3.45V max , 150mA )
5-1
Pins IA,IB,QA and QB
V
I
: 1.25V
Q
V
: 0.5V
mod
+ I OUT
-
I OUT
100 kHz+fmod
+
Q OUT
-
Q OUT
Vcc_SYN
FracN
VREG
DIV
Vcc_REF(2.4V typ.)
f
=26MHz
compRF
REFIN
PFD
I+
DIV
1:1/
QUAD
2
I-
fmod
3W
f
TXIF
BUS
Q+
CTL
REG
Q-
RXON
PWR
TXON
EN
SYNON
FESWON(N,A)
VBat (3.6V typ 3.0V min)
PON_TX
PON_SYNT
PMU
PCF50601
V_MODE
AVDD(1.35V min 2.65V max , 100mA )
VDD1 (1.35V min 2.95V max , 150mA )
VDD2 (1.35V min 3.45V max , 150mA )
VDD3 (1.35V min 3.45V max , 100mA )
ty
. , 1.15V
mi
, 1.35V
max
p
n
p
p
VC-TCXO
26MHz
DATA
CLK
EN
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