Fairchild PowerTrench MOSFET FDD6690A Specification Sheet

FDD6690A
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize the on state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
DC/DC converter
Motor Drives
G
S

Absolute Maximum Ratings

Symbol
V Drain-Source Voltage
DSS
V Gate-Source Voltage
GSS
I Continuous Drain Current @T
D
P
Power Dissipation
D
T , T Operating and Storage Junction Temperature Range
J STG

Thermal Characteristics

R Thermal Resistance, Junction-to-Case
JC
Thermal Resistance, Junction-to-Ambient
R
JA
R
JA
Package Marking and Ordering Information
Device Marking
FDD6690A
2003 Fairchild Semiconductor Corp.
D
D-PAK
TO-252
(TO-252)
o
T =25 C unless otherwise noted
A
Parameter
=25°C
C
@T =25°C
A
Pulsed
@T =25°C
C
@T =25°C
A
@T =25°C
A
Device Package
FDD6690A D-PAK (TO-252)
Features
46 A, 30 V R
DS(ON)
R
DS(ON)
Low gate charge
Fast Switching Speed
High performance trench technology for extremely
low R
DS(ON)
G
Ratings
(Note 3)
(Note 1a)
100
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
–55 to +175
(Note 1)
(Note 1a)
(Note 1b)
Reel Size
13''
July 2003
= 12 m @ V = 10 V
GS
= 14 m @ V = 4.5 V
GS
D
S
Units
30 V
20 V
46 A
12
W
56
3.3
1.5
C
2.7 C/W
45
96
Tape width Quantity
12mm 2500 units
FDD6690A Rev EW)