FDD6690A 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Applications...
Electrical Characteristics Symbol Parameter Drain-Source Avalanche Ratings Drain-Source Avalanche Energy Drain-Source Avalanche Current Off Characteristics Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage On Characteristics (Note 2) Gate Threshold Voltage GS(th) Gate Threshold Voltage GS(th) Temperature Coefficient Static Drain–Source...
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Electrical Characteristics Symbol Parameter Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage V Diode Reverse Recovery Time Diode Reverse Recovery Charge Notes: 1. R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
Typical Characteristics = 10.0V 4.5V 6.0V 5.0V , DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics = 12A = 10V , JUNCTION TEMPERATURE ( Figure 3. On-Resistance Variation withTemperature = 5V , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 4.0V 3.5V 3.0V...
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Typical Characteristics = 12 A , GATE CHARGE (nC) Figure 7. Gate Charge Characteristics 1000 LIMIT DS(ON) 100ms = 4.5V SINGLE PULSE = 96 = 25 0.01 , DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area D = 0.5 0.05 0.02 0.01...
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TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™...