Memory - LG KE600 - Cell Phone Service Manual

3.6. Memory

1Gbit Flash & 512Mbit SDRAM employed on KE600/KE608 with 16 bit parallel data bus thru ADD(0) ~
ADD(24). The 256Mbit Sibley Wireless Flash memory with LPSDRAM stacked device family offers
multiple high-performance solutions. The Sibley flash die is manufactured on 90 nm process
technology.
It delivers 108 MHz synchronous burst and page-mode read rates with supports multi-partitioning with
Read-While-Write (RWW) or Read-While-Erase (RWE) dual operations. The LPSDRAM is a high-
performance volatile memory operating at speeds up to 104 MHz with configurable burst lengths.
TP301
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
A20
A21
A22
A23
A24
1V8_MEM
C327
0.1u
C330
0.1u
C333
0.1u
Figure 11 Flash memory & SDRAM MCP circuit diagram
U304 PF38F5570MMY0B0
D1
A0
C1
A1
B1
A2
B2
A3
A2
A4
B3
A5
A3
A6
A4
A7
G8
A8
F8
A9
E8
A10
G9
A11
F9
A12
E9
A13
D9
A14
C9
A15
B9
A16
B4
A17 _F_ADV
B5
A18 _F1_CE
A5
A19 _F2_CE
F7
A20 _F3_CE
E7
A21 _F4_CE_A27
B7
A22 F_CLK
A6
A23 D_CLK
A7
A24 _D_CLK
A8
A25
B8
A26 _F_RST
F_WAIT
J1
F_VPP
_D_WE
D4
C328 F_VCC1 _F_WP1
D6
0.1u
F_VCC2 _F_WP2
J4
F_VCC3 F_DPD
J6
F_VCC4 N_CLE
N_ALE
C5
D_VCC1
D3
D_VCC2 N_RY__BY
D7
D_VCC3
C331 D_CKE
D2
0.1u
S_VCC D_BA0
D_BA1
J2
VCCQ1 _D_RAS
J3
VCCQ2 _D_CAS
J7
VCCQ3 _D1_CS
J8
VCCQ4 _D2_CS
D_DM0__S_LB
C2
C334
VSS1 D_DM1__S_UB
C3
0.1u VSS2 D_UDQS
C4
VSS3 D_LDQS
C6
VSS4 _S_CS1
C7
VSS5 S_CS2
C8
VSS6
K2
VSS7
K3
VSS8
K4
VSS9
K6
VSS10
K7
VSS11
K8
VSS12
3. TECHNICAL BRIEF
M2 TP302
DQ0
L1
DQ1
K1
DQ2
L2
DQ3
M4
DQ4
L3
DQ5
L4
DQ6
L5
DQ7
M5
DQ8
L6
DQ9
M6
DQ10
L7
DQ11
L8
DQ12
K9
DQ13
L9
DQ14
M8
DQ15
R312 NA
D5
G3 TP305
G2 TP306
H3
E6 R314 22
K5 R315 22
R316 22
J5
H5 R317 22
H7 TP307
_OE
G7
J9
TP308
E2
_WE
H6
R321 NA
E1
R322 0
F1
B6
E5 TP309
D8
H1
G6
TP313
TP314
G4
H4 TP315
F4 TP316
F3 TP317
F2
TP318
E3
H9
H8
M7 R334 NA
M3 R335 NA
F6
H2
A1
DU1
A9
DU2
M1
DU3
M9
DU4
G1
RFU
- 41 -
D0
D1
D2
D3
D4
D5
D6
D7
D8
D9
D10
D11
D12
D13
D14
D15
ADVn
CS_Flash1n
CS_Flash2n
BFCLKI
BFCLKO
SDCLKO
SDCLKI
RDn
R318
RESETn
15K
WAITn
1V8_MEM
WRn
R319
100K
WPn
F_DPD
CKE
A13
A14
RASn
CASn
CS_RAMn
BC0n
BC1n