Low Noise Amplifier
20 - 60 GHz
Features
• Wideband Performance
• Low Noise Figure: 2.5 dB
• Gain: 22 dB
• P1dB: 14 dBm
• Bias Voltage: V
DD
• Bias Current: I
DSQ
• 50 Ω Matched Input and Output
• Positive Voltage Only
• Die size: 2.525 x 1.345 x 0.1 mm
• RoHS* Compliant
Applications
• Test and Measurement
• EW
• ECM
• Radar
Description
The MAAL-011186-DIE is an easy to use wideband
low noise amplifier. It operates from 20 - 60 GHz and
provides 2.5 dB noise figure, 22 dB gain and 14
dBm P1dB. The input and output are fully matched
to 50 Ω with typical return loss of better than –12 dB.
This product is fabricated using a GaAs pHEMT
process which features full passivation for enhanced
reliability.
The MAAL-011186-DIE can be used as a low noise
amplifier stage or as a driver stage in higher power
applications. This device is ideally suited for
Test and Measurement, 5G communications, EW,
ECM, and Radar applications.
Ordering Information
MAAL-011186-DIE
1. Die quantity varies
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1 1
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit:
https://www.macom.com/support
= 3.5 V
= 130 mA
1
1
Gel Pack
Visit
www.macom.com
Functional Schematic
GND
4
3
GND
RF
2
IN
1
GND
18
GND
Pin Configuration
1,3,10,12
2
4,18
5,17
6,16
7, 15
8,14
9,13
11
2. Backside of die must be connected to RF, DC and thermal
ground.
for additional data sheets and product information.
MAAL-011186-DIE
V
V
V
V
V
D1
D2
D3
D4
5
6
7
8
9
17
16
15
14
13
V
V
V
V
V
D1
D2
D3
D4
2
RF GND
RF ground
RF
RF Input
IN
DC GND
DC Ground
V
Drain Bias 1
D1
V
Drain Bias 2
D2
V
Drain Bias 3
D3
V
Drain Bias 4
D4
Current Mirror Reference
V
R
Voltage
RF
RF Output
OUT
Backside of die
Rev. V2
R
10
GND
11
RF
OUT
12
GND
R
2
DC-0028354