Summary of Contents for Nexperia NX-HB-GAN039-BSCUL
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GaN FETs Rev. 1.2 — 4 December 2023 user manual Document information Information Content Keywords GaN FET, half-bridge, converter, evaluation board Abstract The NX-HB-GAN039-BSCUL evaluation board is a half-bridge converter circuit using Nexperia bottom-side cooled power GaN FETs.
2. High Voltage Safety Precautions Read all safety precautions before use! Please note that this document covers only the NX-HB-GAN039-BSCUL and its functions. For additional information, please refer to the Product Specification To ensure safe operation, please carefully read all precautions before handling the evaluation board.
NEVER handle the evaluation board during operation under ANY circumstances After use the Nexperia Evaluation Board contains components which may store high voltage and will take time to discharge. Carefully probe the evaluation board once the power has been removed to check that all capacitors have been discharged.
This enables the basic study of the switching characteristics and efficiency achievable with Nexperia’s 650 V GaN FETs. The circuit can be configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high / low level inputs.
UM90007 Nexperia NX-HB-GAN039-BSCUL 3.5 kW half-bridge evaluation board with bottom-side cooled GaN FETs 3.1. Quick reference information Table 1. NX-HB-GAN039-BSCUL bottom-side cooled Input/Output Parameter Value High-voltage input/output 400 VDC max Auxiliary supply (J1) 10 V min, 18 V max Logic inputs nominal 0 V - 5 V <...
UM90007 Nexperia NX-HB-GAN039-BSCUL 3.5 kW half-bridge evaluation board with bottom-side cooled GaN FETs 5. Circuit description The circuit comprises a simple half-bridge featuring two GAN039-650NBB GaN FETs, as indicated in the block diagram of Fig. 4. Two high-voltage ports are provided which can serve as either input or output, depending on the configuration: boost or buck.
UM90007 Nexperia NX-HB-GAN039-BSCUL 3.5 kW half-bridge evaluation board with bottom-side cooled GaN FETs +HVDC +HVDC high voltage input duty cycle = D HS GaN FET HI/LO GATE DRIVER LS GaN FET Vin\ Vout = D·HVDC load aaa-028881 (a) Buck Mode; see Fig.
For this evaluation board, the half-bridge converter circuit has been implemented on a 4-layer PCB and uses two Nexperia GAN039-650NBB GaN FETs. The circuit schematic, PCB layout and bill of materials for the NX-HB-GAN039-BSCUL bottom-side cooled evaluation board are shown in the next sections.
UM90007 Nexperia NX-HB-GAN039-BSCUL 3.5 kW half-bridge evaluation board with bottom-side cooled GaN FETs 7.1. NX-HB-GAN039-BSCUL bottom-side cooled schematic Buck In / Boost Out Buck Out / Boost In Tie power and analog ground planes at single point Fig. 7. Schematic UM90007 All information provided in this document is subject to legal disclaimers.
UM90007 Nexperia NX-HB-GAN039-BSCUL 3.5 kW half-bridge evaluation board with bottom-side cooled GaN FETs 7.3. NX-HB-GAN039-BSCUL bottom-side cooled Bill of Materials (BOM) Table 2. NX-HB-GAN039-BSCUL Bill of Materials Part Value Package Description Supplier Supplier p/n Voltage C1206 Capacitor, ceramic Farnell 2525173...
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UM90007 Nexperia NX-HB-GAN039-BSCUL 3.5 kW half-bridge evaluation board with bottom-side cooled GaN FETs Part Value Package Description Supplier Supplier p/n Voltage C0603 Capacitor, ceramic Farnell 2749806 100V C0603 Capacitor, ceramic Farnell 2749806 100V ES1J DO-214AC DIODE Farnell 2677373 600V BAT54...
UM90007 Nexperia NX-HB-GAN039-BSCUL 3.5 kW half-bridge evaluation board with bottom-side cooled GaN FETs Part Value Package Description Supplier Supplier p/n Voltage TPSPAD1-13 P1-13 TEST PIN Farnell 1463077 TPSPAD1-13 P1-13 TEST PIN Farnell 1463077 TPSPAD1-13 P1-13 TEST PIN Farnell 1463077 LT3082...
UM90007 Nexperia NX-HB-GAN039-BSCUL 3.5 kW half-bridge evaluation board with bottom-side cooled GaN FETs 9. Dead time control The required form of the gate-drive signals is shown in Fig. 13. The times marked A are the deadtimes when neither transistor is driven on. The deadtime must be greater than zero to avoid shoot-through currents.
UM90007 Nexperia NX-HB-GAN039-BSCUL 3.5 kW half-bridge evaluation board with bottom-side cooled GaN FETs 12. Efficiency sweep Efficiency has been measured for this circuit in buck mode with a 400 VDC input and 230 VDC output, switching at 100 kHz. aaa-032323...
UM90007 Nexperia NX-HB-GAN039-BSCUL 3.5 kW half-bridge evaluation board with bottom-side cooled GaN FETs 14. Legal information Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions.
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UM90007 Nexperia NX-HB-GAN039-BSCUL 3.5 kW half-bridge evaluation board with bottom-side cooled GaN FETs List of Tables Table 1. NX-HB-GAN039-BSCUL bottom-side cooled Input/Output................5 Table 2. NX-HB-GAN039-BSCUL Bill of Materials.....15 Table 3. Revision history............20 UM90007 All information provided in this document is subject to legal disclaimers.
UM90007 Nexperia NX-HB-GAN039-BSCUL 3.5 kW half-bridge evaluation board with bottom-side cooled GaN FETs List of Figures Fig. 1. Example of a safety enclosure in the Nexperia lab... 2 Fig. 2. Example of a probe positioner........3 Fig. 3. NX-HB-GAN039-BSCUL bottom-side cooled half-bridge evaluation board..........
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