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Page3 Memory
eMMC FLASH
5.0封装贴4.41元件
4 GByte
C0M8
C0M9
2.2uF
50V
NC/33pF
10V
R0M9使用5.0需要上件，值10K-100K
使用4.51情况下请NC
C0M9在使用5.0时需要使用1uF
C0M8需要根据实际情况
进行调整
NF_VDD_IF
特别说明：对于Mstar的方案INF-D6只需要经过B5、C5两个点通过过孔出来，
其他点（G1、F2、E3、D4请NC）
POWER
+1.8V_Normal
NF_VDD_IF
+3.3V_Normal
INF_POWER
+3.3V_Nand
INF_POWER
C1M0
C1M1
C1M9
C1M2
C1M3
C1M4
10uF
2.2uF
16V
16V
16V
16V
6.3V
100nF
100nF
10V
100nF
100nF
HS 400向 下兼 容HS2 00， 如 果要 用HS模 式，N F_VDD_I F请 使用 1.8V供 电，
不 用HS模 式， 两 个电 源都 用3 .3 V即 可
这四个点在Mstar方案上请NC
U0M4
INF-D0
A3
D4
DAT0
NC32
INF-D1
A4
D12
A5
DAT1
NC33
D13
INF-D2
DAT2
NC34
B1
D14
NC0
NC35
B2
E1
INF-D3
DAT3
NC36
B3
E2
INF-D4
DAT4
NC37
INF-D5
B4
E3
DAT5
NC38
INF-D6
B5
E12
DAT6
NC39
B6
E13
INF-D7
DAT7
NC40
K5
E14
INF-RST
RST_n
NC41
INF-CMD
M5
F1
INF_POWER
CMD
NC42
INF-CLK
M6
F2
CLK
NC43
VDDI
C2
F3
VDDi
NC44
H5
F12
EMMC_DS
DS
NC45
F13
NC46
INF-D3
A1
F14
NC1
NC47
INF-D4
A2
G1
NC2
NC48
INF-D7
A8
G2
NC3
NC49
A9
G12
NF_VDD_IF
NC4
NC50
A10
G13
NC5
NC51
INF-D6
A11
G14
NC6
NC52
A12
H1
EMMC_DS
NC7
NC53
A13
H2
NC8
NC54
A14
H3
NC9
NC55
D3
H12
NC10
NC56
B7
H13
INF-D7
NC11
NC57
B8
H14
NC12
NC58
B9
J1
NF_VDD_IF
B10
NC13
NC59
J2
NC14
NC60
B11
J3
INF-D6
NC15
NC61
B12
J12
NC16
NC62
B13
J13
NC17
NC63
B14
J14
C1
NC18
NC64
K1
VDDI
NC19
NC65
C3
K2
INF-D5
NC20
NC66
C7
K3
NC21
NC67
C8
K12
NC22
NC68
C9
K13
NC23
NC69
C10
K14
NC24
NC70
C11
L1
INF-D6
NC25
NC31
C12
L2
NC26
NC71
C13
L3
NC27
NC72
C14
L12
NC28
NC73
D1
L13
NC29
NC74
D2
L14
NC30
NC75
INF-RST
N10
M1
NC93
NC76
N9
M2
NC92
NC77
INF-CLK
N8
M3
NC91
NC78
N7
M7
INF-CLK
NC90
NC79
N6
M8
NC89
NC80
N3
M9
INF-RST
NC88
NC81
N1
M10
NC87
NC82
M11
NC83
INF-CLK
P9
M12
NC101
NC84
P8
M13
INF-CMD
NC100
NC85
P2
M14
NC99
NC86
P1
P14
NC98
NC106
N14
P13
NC97
NC105
N13
P12
NC96
NC104
N12
P11
NC95
NC103
N11
C5
INF-D6
NC94
NC/RFU1
G3
RFU8
A7
G10
E5
RFU2
RFU9
K6
RFU3
RFU10
E8
K7
RFU4
RFU11
E9
K10
RFU：Resreved For future
RFU5
RFU12
E10
P7
Use,悬空
RFU6
RFU13
F10
P10
注意：由于原理图符号做了4.51与5.0的兼容，
RFU7
RFU14
以上四个引脚的定义请参照表格设计
P6
C6
NF_VDD_IF
VSSQ
VCCQ
P4
P3
VSSQ
VCCQ
N5
P5
VSSQ
VCCQ
N2
N4
VSSQ
VCCQ
C4
M4
VSSQ
VCCQ
A6
J10
INF_POWER
VSS
VCC
J5
F5
SUMSANG
VSS
VCC
K8
K9
VSS
VCC
H10
E6
VSS
VCC
G5
Toshiba
VSS
E7
VSS
NC/THGBMDG5D1LBAIL
HYNIX
4701-T5D4G1-1530/NC
NAND-CLE
NAND-CLE
NAND-ALE
NAND-ALE
NAND-WEZ
NAND-WEZ
NAND-WPZ
NAND-WPZ
EMMC-D0
EMMC-D0
EMMC-D1
EMMC-D1
EMMC-D2
EMMC-D2
EMMC-D3
EMMC-D3
EMMC-D4
EMMC-D4
EMMC-D5
EMMC-D5
EMMC-D6
EMMC-D6
EMMC-D7
EMMC-D7
NAND-CEZ
NAND-CEZ
NAND-REZ
NAND-REZ
NAND-RBZ
NAND-RBZ
INF_D0
NAND-D4
EMMC-D0
INF_D1
NAND-D3
EMMC-D1
INF_D2
NAND-D2
EMMC-D2
INF_D3
NAND-D5
EMMC-D3
INF_D4
NAND-D6
EMMC-D4
INF_D5
NAND-D7
EMMC-D5
INF_D6
NAND-D0
EMMC-D6
INF_D7
NAND-D1
EMMC-D7
+1.8V_Normal
R3M1最大100K
INF-CMD
R1M7
10KΩ
INF-CLK
R1M8
22Ω
INF_CLK
INF-CMD
INF_CMD
R1M9
22Ω
INF-RST
INF_RST
R2M0
0Ω
定义
Ver4.51
Ver 5.0
引脚号
A6
RFU
VSS
H5
RFU
Data strobe
J5
RFU
VSS
C5
RFU
NC
Vendor
Ver4.51
Ver 5.0
√
√
√
√
√
√
NAND FLASH
+3.3V_Normal
U0M1
1
NC1
NC48
2
NC2
NC47
3
R0M2
R0M1
R0M3
NC3
NC46
4
4.7KΩ
4.7KΩ
4.7KΩ
NC4
NC45
5
6
NC5
I/O7
NC6
I/O6
7
NAND-RBZ
R//B
I/O5
8
NAND-REZ
/RE
I/O4
NAND-CEZ
9
/CE
NC40
10
NC10
NC39
11
NC11
NC38
12
C0M1 1uF
VCC
VCC
13
16V
VSS
VSS
14
NC14
NC35
15
NC15
NC34
NAND-CLE
16
CLE
NC33
17
NAND-ALE
ALE
I/O3
18
NAND-WEZ
/WE
I/O2
NAND-WPZ
19
/WP
I/O1
20
NC20
I/O0
21
WP:
NC21
NC28
22
0:WRITE PROTECT
NC22
NC27
23
NC23
NC26
1:READ AND WRITE
24
NC24
NC25
H27U1G8F2BTR-BC
请按程序所需选用NAND FLASH的芯片品牌和容量
Technical Document
INF_CLK
EMMC-CLK
NAND-REZ
INF_CMD
EMMC-CMD
NAND-CEZ
INF_RST
EMMC-RST
NAND-RBZ
R3M8
EMMC_DS
NAND-DQS [2]
R0M9
22Ω
10KΩ
GND Guard Pair to Pair
INF-D2
EMMC-D2
EMMC-D2
INF-D1
EMMC-D1
EMMC-D1
INF-D0
EMMC-D0
EMMC-D0
INF-D3
EMMC-D3
EMMC-D3
INF-D4
EMMC-D4
EMMC-D4
INF-D5
EMMC-D5
EMMC-D5
INF-D6
EMMC-D6
EMMC-D6
INF-D7
EMMC-D7
EMMC-D7
48
47
46
45
44
NAND-D7
43
NAND-D6
42
NAND-D5
41
NAND-D4
40
+3.3V_Normal
39
38
37
C0M2 100nF
36
16V
35
34
33
32
NAND-D3
31
NAND-D2
30
NAND-D1
29
NAND-D0
28
本电路来源于8R68
27
26
1G:4711-H271G0-0480
25
4G:4711-H274G1-0480
Title
Size
Document Number
Custom
Date:
Friday, November 02, 2018
31/43
MSD6886
Rev
eMMC
1.0
Sheet
5
of
16
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