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harman/kardon
Darlington
Silicon PNP Epitaxial Planar Transistor
Absolute maximum ratings
(Ta=25°C)
2SB1560
Symbol
Unit
–160
V
V
CBO
V
–150
V
CEO
–5
V
V
EBO
I
–10
A
C
I
–1
A
B
P
100(Tc=25°C)
C
W
Tj
150
°C
T
–55 to +150
stg
°C
Typical Switching Characteristics (Common Emitter)
V
I
R
V
CC
L
C
(V)
(Ω)
(A)
–70
10
–7
– V
I
Characteristics (Typical)
C
C E
– 1 0
– 8
– 6
– 4
– 2
0
0
– 2
– 4
C o l l e c to r - Em i tt e r V o l ta g e V
– I
h
Characteristics (Typical)
F E
C
40,000
10,000
5,000
1,000
– 0 . 2
– 0 .5
– 1
C o l l e c to r C u rr e n t I
(A )
C
– I
f
Characteristics (Typical)
T
E
1 0 0
8 0
6 0
4 0
2 0
0
0 . 0 2
0 . 0 5
0 .1
0 .5
1
Em i tt e r C u r re n t I
( A )
E
2SB1560
(Complement to type 2SD2390)
Electrical Characteristics
Symbol
Conditions
I
V
=–160V
CB
CBO
V
=–5V
I
EBO
EB
V
I
=–30mA
(BR)CEO
C
h
V
=–4V, I
FE
CE
V
I
=–7A, I
(sat)
CE
C
B
V
I
=–7A, I
(sat)
C
B
BE
V
=–12V, I
fr
CE
C
V
=–10V, f=1MHz
OB
CB
∗h
Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
FE
I
V
I
BB1
BB2
B1
B2
(V)
(V)
(mA)
(mA)
–10
5
–7
7
( s at ) – I
V
C E
B
–3
–2
–1
0
– 6
–0.2
–0.5
–1
(V)
Bas e C ur r ent I
C E
– I
h
Temperature Characteristics (Typical)
F E
C
(V
=–4V )
C E
50000
10000
5000
1000
500
–5
–10
–0.2
–0.5
C ol lec tor C ur r ent I
Safe Operating Area (Single Pulse)
(V
=–12V )
CE
–30
–10
–5
–1
–0.5
Without Heatsink
Natural Cooling
–0.1
–0.05
5
10
– 3
–5
–10
C oll ec tor - Em itter Vol tage V
Application : Audio, Series Regulator and General Purpose
(Ta=25°C)
2SB1560
Unit
µ A
–100
max
µ A
–100
max
–150
V
min
∗
=–7A
5000
min
C
=–7mA
–2.5
V
max
=–7mA
–3.0
V
max
=2A
50
typ
MHz
E
230
pF
typ
t
t
t
on
stg
f
( µ s)
( µ s)
( µ s)
0.8typ
3.0typ
1.2typ
Characteristics (Typical)
–10A
–7A
I
=–5A
C
–5
–10
–50
–100
–200
( m A)
B
( V
=–4V)
C E
125˚C
25˚ C
–30˚C
0.5
0.1
–1
–5
–10
(A )
C
–50
–100
–200
( V)
C E
AVR 360/230 Service Manual
B
Equivalent circuit
External Dimensions MT-100(TO3P)
4.8
15.6
±0.4
9.6
a
ø3.2
±0.1
b
2
3
+0.2
1.05
-0.1
5.45
5.45
±0.1
±0.1
B
C
E
Weight : Approx 6.0g
a. Type No.
b. Lot No.
– V
I
Temperature Characteristics (Typical)
C
BE
(V
–10
–8
–6
–4
–2
0
0
–1
–2
Base-E m ittor V ol tage V
(V )
BE
θ
– t Characteristics
j-a
3
1
1
5
10
50 100
Ti me t(m s )
P c – T a Derating
100
50
Wi thout Heats ink
3.5
0
0
25
50
75
100
125
A m bi ent Tem per ature Ta(˚ C)
Page 98 of 138
(70 Ω)
E
C
±0.2
2.0
±0.1
+0.2
0.65
-0.1
1.4
=–4V )
C E
–2.5
500 1000 2000
150
47
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