e2v CCD42-90 Manual

Scientific ccd sensor back-illuminated, 2048 x 4612 pixels, non inverted mode operation
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INTRODUCTION
The CCD42-90 is a large area full-frame (FF) imaging
device. Back illumination technology, in combination with an
extremely low noise amplifier, makes the devices well suited
to the most demanding astronomical and scientific imaging
applications.
DESCRIPTION
The device has an image area with 2048 x 4612 pixels each
13.5 µm square. There is a single read-out register with low-
noise amplifiers at both ends. Additional JFET buffers are
included in the package to provide an increased capability to
drive high-capacitance loads. A gate-controlled dump-drain
is provided to allow fast dumping of unwanted data. The
register is designed to accommodate four image pixels of
charge and a summing well is provided capable of holding
that from six image pixels. The output amplifier has a
feature to enable the responsivity to be reduced, allowing
the reading of such large charge packets.
The device is supplied in a package designed to facilitate
the construction of large close-butted mosaics used at
cryogenic temperatures. The design of the package will
ensure that the device flatness is maintained at the working
temperature.
The sensor is shipped in a protective container, but no
permanent window is fitted.
VARIANTS
Standard silicon and deep depletion silicon device types can
be supplied with a range of AR coatings. Graded coatings
are available as custom variants.
Mating ZIF sockets are available to order.
PART REFERENCES
CCD42-90-g-xxx
g = cosmetic grade
xxx = device-specific part number
Details are given on the last page.
Devices with other formats (e.g. 2048 x 2048, 4096 x 4096
pixels) are also available in the same family.
Consult e2v technologies for further information on any of
the above options.
Whilst e2v technologies has taken care to ensure the accuracy of the information contained herein it accepts no responsibility for the consequences of any use thereof
and also reserves the right to change the specification of goods without notice. e2v technologies accepts no liability beyond the set out in its standard conditions of sale in
respect of infringement of third party patents arising from the use of tubes or other devices in accordance with information contained herein.
e2v technologies limited, Waterhouse Lane, Chelmsford, Essex CM1 2QU United Kingdom Telephone: +44 (0)1245 493493 Facsimile: +44 (0)1245 492492
e-mail:
enquiries@e2v.com
Internet:
www.e2v.com
e2v technologies inc. 4 Westchester Plaza, PO Box 1482, Elmsford, NY10523-1482 USA Telephone: (914) 592-6050 Facsimile: (914) 592-5148 e-mail: enquiries@e2vtechnologies.us
© e2v technologies (uk) limited 2014
Holding Company: e2v technologies plc
CCD42-90 Scientific CCD Sensor
Back-illuminated, 2048 x 4612 Pixels,
Non Inverted Mode Operation
SUMMARY PERFORMANCE
(Typical values)
Number of pixels
Pixel size
Image area
Outputs
Package size
Package format
Focal plane height, above base
Connectors
Flatness
Amplifier responsivity
Readout noise (rms)
Maximum data rate
Image pixel charge storage
Dark signal at 173K
Quoted performance parameters given here are "typical"
values. Specification limits are shown later in this data
sheet.
A1A-100026, Version 9, December 2014
2048(H) x 4612(V)
13.5 µm square
27.6 mm x 62.2 mm
2
28.2mm x 67.3 mm
Invar metal package with
PGA connector
14.00 mm
PGA; 40 pins
15 µm p-v maximum
4.5 µV/e
3 e
at 20 kHz
3 MHz
150,000 e
3 e
/pixel/hour
118717

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Summary of Contents for e2v CCD42-90

  • Page 1 Whilst e2v technologies has taken care to ensure the accuracy of the information contained herein it accepts no responsibility for the consequences of any use thereof and also reserves the right to change the specification of goods without notice. e2v technologies accepts no liability beyond the set out in its standard conditions of sale in respect of infringement of third party patents arising from the use of tubes or other devices in accordance with information contained herein.
  • Page 2 9 later. Measured with a Fe X-ray source. The CTE value is quoted for the complete clock cycle (i.e. not per phase). © e2v technologies (uk) limited 2014 Document subject to disclaimer on page 1 A1A-100026 Version 9, page 2...
  • Page 3: Cosmetic Specifications

    The variation of typical read noise with operating frequency is shown below. This is measured using correlated double sampling with a pre-sampling bandwidth equal to twice the pixel rate in mode 1, temperature range 150 – 230 K. © e2v technologies (uk) limited 2014 Document subject to disclaimer on page 1...
  • Page 4: Spectral Response

    QE (%) QE (%) QE (%) See also the figures below. Consult e2v technologies for availability of spectral response variants. Devices with alternate spectral responses may be available to special order. © e2v technologies (uk) limited 2014 Document subject to disclaimer on page 1...
  • Page 5 RØ1R and RØ2R should be transposed. To transfer a whole line to the right hand amplifier the connections to RØ1L and RØ2L should be transposed. © e2v technologies (uk) limited 2014 Document subject to disclaimer on page 1 A1A-100026 Version 9, page 5...
  • Page 6: Output Circuit

    2 can be either a 3 - 5 mA current source or a 5 - 10 kΩ resistor and the output is taken at OP. In this mode the output impedance is typically 100 Ω and the on-chip dissipation is typically 80 mW. © e2v technologies (uk) limited 2014 Document subject to disclaimer on page 1...
  • Page 7: Electrical Interface

    Refer to the specific device test data provided with each device as this gives the optimised values obtained during testing. © e2v technologies (uk) limited 2014 Document subject to disclaimer on page 1...
  • Page 8 U309 data: VGD and VGS absolute maximum = -25V. These connections are for an optional temperature sensor; consult factory for availability. PIN CONNECTIONS (View facing underside of package) © e2v technologies (uk) limited 2014 Document subject to disclaimer on page 1 A1A-100026 Version 9, page 8...
  • Page 9: Electrical Interface Characteristics

    The dissipation reduces to only that of the amplifiers during the time that charge is being collected in the image sections with both the parallel and serial clocks static. © e2v technologies (uk) limited 2014 Document subject to disclaimer on page 1...
  • Page 10 FRAME READOUT TIMING DIAGRAM DETAIL OF LINE TRANSFER IØ1 IØ1 IØ2 IØ2 IØ3 IØ3 RØ1 RØ1 RØ2 RØ2 RØ3 RØ3 ØR ØR © e2v technologies (uk) limited 2014 Document subject to disclaimer on page 1 A1A-100026 Version 9, page 10...
  • Page 11 Output Output Reset Reset sampling sampling Signal Signal window window sampling sampling window window LINE OUTPUT FORMAT (Shown for split register operation) © e2v technologies (uk) limited 2014 Document subject to disclaimer on page 1 A1A-100026 Version 9, page 11...
  • Page 12 ØR Previous line N-line transfer into register Clear Line transfer Next line read- out and dump charge register into register read- out © e2v technologies (uk) limited 2014 Document subject to disclaimer on page 1 A1A-100026 Version 9, page 12...
  • Page 13 No maximum other than that necessary to achieve an acceptable dark signal at the longer read-out times. As set by the read-out period. © e2v technologies (uk) limited 2014 Document subject to disclaimer on page 1 A1A-100026 Version 9, page 13...
  • Page 14 PACKAGE DETAIL Package Mass = 150 g approx. Inactive edge spacing Sides 260 ± 50 µm 120 ± 50 µm Bottom (bond connections) © e2v technologies (uk) limited 2014 Document subject to disclaimer on page 1 A1A-100026 Version 9, page 14...
  • Page 15: Temperature Range

    Characterisation data is held discharge of static electricity may destroy or irreversibly at e2v technologies with whom it is recommended that degrade the device. Accordingly, full antistatic handling contact be made if devices are to be operated in any high precautions should be taken whenever using a CCD radiation environment.

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