Table of Contents
Advertisement
5
NAND FLASH
D
+3.3V_Nand
+3.3V_Nand
R21
10k
NAND-RBZ
NAND-REZ
NAND-CEZ
NAND-CEZ1
C
NAND-CLE
NAND-ALE
NAND-WEZ
NAND-WPZ
C434
100n/16V
B
A
5
4
+3.3V_Nand
N51
1
48
NC_1
NC_48
2
47
NC_2
NC_47
3
46
NC_3
NC_46
4
45
NC_4
NC_45
5
44
NC_5
I/O7
6
43
NC_6
I/O6
7
42
R/B#
I/O5
8
41
RE#
I/O4
9
40
CE#
NC_40
10
39
NC_10
NC_39
11
38
NC_11
NC_38
12
37
VCC_1
VCC_2
13
36
VSS_1
VSS_2
14
35
NC_14
NC_35
15
34
NC_15
NC_34
16
33
CLE
NC_33
17
32
ALE
I/O3
18
31
WE#
I/O2
19
30
WP#
I/O1
20
29
NC_20
I/O0
21
28
NC_21
NC_28
22
27
NC_22
NC_27
23
26
NC_23
NC_26
24
25
NC_24
NC_25
C433
TC58NVG1S3HTA00
100n/16V
4
3
NAND Power
3.3VA
C364
2.2u/10V
NAND-D7
NAND-D6
NAND-D5
NAND-D4
NAND-DQS
NAND-WPZ
R23
NAND-WEZ
NAND-ALE
NAND-CLE
Micron Nand需要NC
0R
NAND-DQS
NAND-D3
NAND-D2
NAND-CEZ1
NAND-D1
NAND-CEZ
NAND-D0
NAND-REZ
NAND-RBZ
3
2
+3.3V_Nand
C431
C432
100n/16V
100n/16V/NC
R24
22R
NAND_DQS
4
5
NAND_WPZ
3
6
NAND_WEZ
2
7
NAND_ALE
1
8
NAND_CLE
RP311
22R
需靠近主IC
C435
33p/50V/NC
4
5
NAND_CEZ1
3
6
NAND_CEZ
2
7
NAND_REZ
1
8
NAND_RBZ
RP312
22R
需靠近主IC
C437
33p/50V/NC
RP313
22R
NAND-D0
1
8
NAND_D0
NAND-D1
2
7
NAND_D1
NAND-D2
3
6
NAND_D2
NAND-D3
4
5
NAND_D3
RP314
22R
NAND-D4
1
8
NAND_D4
NAND-D5
2
7
NAND_D5
NAND-D6
3
6
NAND_D6
NAND-D7
4
5
NAND_D7
Hisense Electric Co.,Ltd.
Hisense Electric Co.,Ltd.
Hisense Electric Co.,Ltd.
No.11,Jiangxi Road,Qingdao,China
No.11,Jiangxi Road,Qingdao,China
No.11,Jiangxi Road,Qingdao,China
WWW.HISENSE.COM
WWW.HISENSE.COM
WWW.HISENSE.COM
Title
Title
Title
Hisense MSD6308RT
Hisense MSD6308RT
Hisense MSD6308RT
Size
Size
Size
Schematic Name
Schematic Name
Schematic Name
A
A
A
<Doc>
<Doc>
<Doc>
Date:
Date:
Date:
Monday, June 01, 2015
Monday, June 01, 2015
Monday, June 01, 2015
2
1
D
NAND_DQS
2
NAND_WPZ
2
NAND_WEZ
2
NAND_ALE
2
NAND_CLE
2
C
NAND_CEZ1
2
NAND_CEZ
2
NAND_REZ
2
NAND_RBZ
2
NAND_D[7:0]
2
B
A
Rev
Rev
Rev
1.0
1.0
1.0
Sheet
Sheet
Sheet
12
12
12
of
of
of
14
14
14
1
Advertisement
Table of Contents
