Samsung SA-N9001 Hardware Manual

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Harman 5G NAD Design Specification Document

NAD SAMSUNG S5123

Model SA-N9001 CUSTOMER D

Hardware Guide

Version 1.3(2020.12.03)

Confidential and Proprietary – Samsung Electronics Co. & Harman

Disclaimer: This information is confidential and proprietary and should not be reproduced in whole or part unless

authorized in writing by the authorizing person of Samsung Electronics & Harman.

Restricted Distribution: Not to be distributed to anyone who is not an employee of Automotive Electronics Business

Team without the express approval of Samsung Electronics & Harman.

Samsung Electronics Automotive Electronics Business Team

129,Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16677 Korea

1 / 79

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Page 1 Disclaimer: This information is confidential and proprietary and should not be reproduced in whole or part unless authorized in writing by the authorizing person of Samsung Electronics & Harman. Restricted Distribution: Not to be distributed to anyone who is not an employee of Automotive Electronics Business Team without the express approval of Samsung Electronics &...
Page 2 Global sku support band update Yoongoo Nam 2020.10.16 LTE CA support band update Yoongoo Nam 2020.12.01 LTE CA support band update Yoongoo Nam 2020.12.03 FCC warning update Yoongoo Nam © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 2 / 79...
Page 3: Table Of Contents
3.1.3 Output Power Supply Interface.......................30 UART and SPI Interface…........................31 USIM Card Interface…..…........................32 Audio Interface………..…........................32 PCIe Interface………..…… ........................33 RF Specification..............................35 About This Chapter..........................35 © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 3 / 79...
Page 4 Operating and Storage Temperatures and Humidity................55 Electrical Features of Application Interfaces…….................56 Power Supply Features…………………………...................56 5.5.1 Input Power Supply........................56 5.5.2 Power Consumption........................57 EMC and ESD Features……………………………................62 Package Information..............................63 © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 4 / 79...
Page 5 Packaging…………….......................... 65 Label…...………………........................66 Storage Guidelines……........................67 Moisture Sensitivity.…......................... 67 Certification…………………..........................68 Certifications………..........................68 FCC/IC Regulatory notices ........................68 Software information............................. 70 AT Command………..........................70 Acronyms and Abbreviations..........................71 © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 5 / 79...
Page 6 Figure 5-1 Power supply during burst emission …….…………………………………………………… 56 Figure 6-1 Dimensions…………………….………….….………… ............63 Figure 6-2 Shield-can cover………..…….….……….….………… ............64 Figure 6-3 Packaging……………..……….………….…..………… ............65 Figure 6-3 Label….…..…………..……….………….…..………… ............66 © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 6 / 79...
Page 7 Table 5-4 Requirements for input power…………………................56 Table 5-5 Requirements for input current……………..……................ 56 Table 5-6 Average current consumption………..…..……................57 Table 7-1 Product certifications………....…..……................68 Table 8-1 AT Command List………….....…………................70 © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 7 / 79...
Page 8: General
4G LTE, 3G FDD, 3G TDD, 2G GSM. This document describes the module information about WAVE module. This document helps hardware engineers to understand the interface specifications, electrical features and related product guidelines of the SAMSUNG WAVE Network Access Device module. 1.2 Function overview 1.2.1 Support Band...
Page 9 1C-5A, 5A-1C-3A, 1A-1A-3A-7A, 3A-1A-1A-7A, 7A-1A-1A-3A, 1A-1A-3A-28A, 3A- 1A-1A-28A, 28A-1A-1A-3A, 1A-3C-5A, 3C-1A-5A, 5A-1A-3C, 1A-3A-3A-7A, 3A-3A- 1A-7A, 7A-1A-3A-3A, 1A-3C-7A, 3C-1A-7A, 7A-1A-3C, 1A-3A-3A-8A, 3A-3A-1A- 8A, 8A-1A-3A-3A, 1A-3C-8A, 3C-1A-8A, 8A-1A-3C, 1A-3A-3A-19A, 3A-3A-1A-19A, 19A-1A-3A-3A, 1A-3A-3A-20A, 3A-3A-1A-20A, 20A-1A-3A-3A, 1A-3C-20A, 3C-1A- © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 9 / 79...
Page 10 1A-1A-3C-7A, 3C-1A-1A-7A, 7A-1A-1A-3C, 1A-3A-3A-7A-7A, 3A-3A-1A-7A-7A, 7A-7A-1A-3A-3A, 1A-3C-7C, 3C-1A-7C, 7C-1A-3C, 1A-3C-40C, 3C-1A-40C, 1A- 3C-7A-8A, 3C-1A-7A-8A, 7A-1A-3C-8A, 8A-1A-3C-7A, 1A-3A-7C-20A, 3A-1A-7C- 20A, 7C-1A-3A-20A, 20A-1A-3A-7C, 1A-3A-3A-7A-20A, 3A-3A-1A-7A-20A, 7A-1A- 3A-3A-20A, 20A-1A-3A-3A-7A, 1A-3C-7A-20A, 3C-1A-7A-20A, 7A-1A-3C-20A, © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 10 / 79...
Page 11 4A-5A, 4A-12A, 4A-13A, 4A-17A, 5B, 5A-7A, 5A-40A, 5A-66A, 7C, 7A-8A, 7A- 20A, 7A-26A, 7A-28A, 8A-39A, 8A-41A, 12A-66A, 19A-42A, 21A-28A, 21A-42A, 28A-41A, 28A-42A, 38C, 39C, 40C, 40A-42A, 41C, 41A-42A, 42C, 66B, 66C © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 11 / 79...
Page 12: Function Overview
3GPP requirements, which means that some RF parameters may deviate from the 3GPP specification in the order of a few dB. © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 12 / 79...
Page 13: Circuit Block Diagram
1.2.3 Circuit Block Diagram The module was developed based on Samsung platform. Figure 1-1 shows the circuit block diagram. The major functional units contain the following parts:  Power Management  Baseband Controller  SPI NOR Flash  RF Circuit...
Page 14: Application Block Diagram
I2C Interface Inter-Integrated Circuit SDIO Interface Secure Digital Input and Output (SD3.0) PCIe Interface Peripheral Component Interface Express MII Interface Media Independent Interface embedded Multi Media Card Interface eMMC Interface © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 14 / 79...
Page 15: Components Layout
1.2.5 Components Layout Figure 1-3 Components Layout © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 15 / 79...
Page 16: Description Of The Application Interfaces
2 Description of the Application Interfaces 2.1 LGA Interface Figure 2-1 LGA Interface (TOP View) © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 16 / 79...
Page 17: Figure 2-2 Appearance Of The Module (Without Label)
TCU side MIPI CLK for ANT RFFE_CLK Ant switch Ant switch switch at TCU side Connect to GND if GPADC2 Ant switch (ADC) Ant switch (ADC) unused PCIE Interface © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 17 / 79...
Page 18 Audio I/F Serial CP_I2S1_DIN_RSV CP_I2S1_DIN Data Input open(floating) Leave this pin Audio I/F Serial CP_I2S1_DOUT_RSV CP_I2S1_DOUT Data Output open(floating) Leave this pin Audio I/F CP_I2S1_LRCK_RSV CP_I2S1_LRCK Left/Right Channel open(floating) © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 18 / 79...
Page 19 Leave this pin UART3_TXD UART3_TXD CP UART3 Tx Data open(floating) TCU thermal detection Thermistor on CP_THM NAD module (Max CP_THM CP_THM 1.8V) EMMC Interface Leave this pin EMMC_CLK EMMC_CLK EMMC_CLK open(floating) © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 19 / 79...
Page 20 XETH0_TXD1 XETH0_TXD1 open(floating) Leave this pin XETH0_TXD2 XETH0_TXD2 XETH0_TXD2 open(floating) Leave this pin XETH0_TXD3 XETH0_TXD3 XETH0_TXD3 open(floating) GNSS Control & Debug Pins Leave this pin GNSS_LNA_EN_L1 GNSS_LNA_Control GNSS_LNA_EN_L1 open(floating) © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 20 / 79...
Page 21 XCP_GPIO_48 GPIO_ANT_SW1 AP_GPIO AP / CP GPIO XCP_GPIO_49 GPIO_ANT_SW2 AP_GPIO AP / CP GPIO XCP_GPIO_54 GPIO_ANT_SW3 AP_GPIO AP / CP GPIO XCP_GPIO_55 GPIO_ANT_SW4 AP_GPIO AP / CP GPIO © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 21 / 79...
Page 22 AP_GPIO_SDIO1_D2 AP_GPIO AP_GPIO open(floating) Leave this pin AP_GPIO_SDIO1_D3 AP_GPIO AP_GPIO open(floating) SPI Flash (eAP emergency Boot Download. Connect to EDGE connector) Leave this pin CP_SPI1_TXD_FLASH CP_SPI1_TXD_FLASH SPI MOSI open(floating) © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 22 / 79...
Page 23 Leave this pin Leave this pin Reserved Reserved open(floating) open(floating) Leave this pin Leave this pin Reserved Reserved open(floating) open(floating) Leave this pin Leave this pin Reserved Reserved open(floating) open(floating) © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 23 / 79...
Page 26 Leave this pin open(floating) open(floating) Leave this pin Leave this pin open(floating) open(floating) Leave this pin Leave this pin open(floating) open(floating) Leave this pin Leave this pin open(floating) open(floating) © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 26 / 79...
Page 27: Lga Interface Guideline
If TCU use Qorvo ANT switch, USID pin of ANT switch sholud be connected to VIO pin, to distinguish it from the ANT switch in NAD side. 2.2.3 PCIe Place 220nF series capacitor close to MTK pin if they don't have any recommendation. © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 27 / 79...
Page 28: Cp Hw Revision
Figure 2-4 CP HW Revision 2.4 USB Interface S5123 chipset do not support USB. The USB interface cannot be used in the NAD because related functions are not supported in the S5123 chipset. © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 28 / 79...
Page 29: Power Interface
VLDO10_C Power supply for USIM card Module output power of USIM P_USIM0 VLDO11_C Power supply for USIM1 card Power supply for USIM1 card P_USIM1 Include Thermal Ground Pad pins © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 29 / 79...
Page 30: Input Power Supply Interface
(typical value) for external level conversion. This power is shared with CP GPIO. Be aware to affect CP stable. Through the VLDO10_CP_USIM0, the module can supply 1.8 V or 2.85 V power for the USIM card. © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 30 / 79...
Page 31: Uart And Spi Interface
Typ. (V) CP_SPI_MISO SPI interface data output CP_SPI_MOSI SPI interface data input PI_C SPI interface clock CP_S CP_SPI_CSN SPI interface chip select Figure 3-3 Recommended connection of the SPI interface © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 31 / 79...
Page 32: Usim Card Interface
The module PCM interface enables communication with an external codec to support linear format. Figure 3-4 Recommended circuit diagram of the PCM interface(The module is used as PCM master) CODEC Module PCM_SYNC PCM_SYNC PCM_DIN PCM_OUT PCM_IN PCM_DOUT PCM_CLK PCM_CLK © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 32 / 79...
Page 33: Pcie Interface
220nF capacitors inner module are separately placed on the TX signal in series. In addition, two 220nF capacitors placed on the differential clock output signals in series are used for DC blocking. Figure 3-5 Recommended circuit of the PCIe interface(CP only) © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 33 / 79...
Page 34: Figure 3-6 Recommended Circuit Of The Pcie Interface(Eap)
Hardware Guide Figure 3-6 Recommended circuit of the PCIe interface(eAP) Figure 3-7 Recommended circuit of the PCIe interface(eAP DSDA) © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 34 / 79...
Page 35: Rf Specification
1805–1880 MHz LTE Band 4 1710–1755 MHz 2110–2155 MHz LTE Band 5 824–849 MHz 869–894 MHz LTE Band 7 2500–2570 MHz 2620–2690 MHz LTE Band 8 880–915 MHz 925–960 MHz © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 35 / 79...
Page 36 5G n28 703 ~ 748 MHz 758 ~ 803 MHz 5G n38 2570 ~ 2620 MHz 2570 ~ 2620 MHz 5G n41 2496 - 2690 MHz 2496 - 2690 MHz © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 36 / 79...
Page 37: Power Class
- UL max 4CC 300MHz for sub6G 2) LTE Feature A. FDD/TDD mode B. Variable bandwidth(BW) - 1.4, 2, 5, 10, 15, 20 MHz C. Modulation - QPSK, 16QAM, 64QAM, 256QAM. © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 37 / 79...
Page 38 Class 3 (+24 dBm + 1/– 3 dB) for UMTS 2100, WCDMA Band 1 Class 3 (+24 dBm + 1/– 3 dB) for UMTS 900, WCDMA Band 8 Class 3 (+23 dBm±2 dB) for n1 Class 3 (+23 dBm±2 dB) for n2 © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 38 / 79...
Page 39 Class 3 (+23 dBm±2 dB) for n66 +2/-2.5 Class 3 (+23 dBm dB) for Class 3 (+23 dBm +2/-3 dB) for n77 Class 3 (+23 dBm +2/-3 dB) for n78 © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 39 / 79...
Page 40 DC_2A_n78A, DC_3A_n28A, DC_3A_n77A, DC_3A_n78A, DC_5A_n66A, DC_5A_n78A, DC_7A_n28A, DC_7A_n78A, DC_8A_n77A, DC_8A_n78A, DC_12A_n66A, DC_18A_n77A, DC_18A_n78A, DC_19A_n77A, DC_19A_n78A, DC_20A_n28A, DC_20A_n77A, DC_20A_n78A, DC_21A_n77A, DC_21A_n78A, DC_26A_n41A, DC_26A_n77A, DC_26A_n78A, DC_28A_n77A, DC_28A_n78A, DC_39A_n78A, DC_41A_n77A, DC_41A_n78A, DC_66A_n5A, DC_66A_n71A, DC_66A_n78A © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 40 / 79...
Page 41: Conducted Rf Measurement
GMSK (BER < 2.44%) -108 < –98 8PSK (MCS5, BLER < -108 10%) < –102 GSM 1900 GMSK (BER < 2.44%) -108 < –98 8PSK (MCS5, BLER < -108 10%) © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 41 / 79...
Page 42 UMTS Band 4 (BER < 0.1%) -109 < –104.7 UMTS Band 5 (BER < 0.1%) -109 < –103.7 UMTS Band 8 (BER < 0.1%) -109 < –106.7 UMTS Band 19 (BER < 0.1%) -109 © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 42 / 79...
Page 43 LTE Band 41 RX (Main+AUX,10 MHz) < –96 LTE Band 42 RX (Main+AUX,10 MHz) < –96.5 LTE Band 66 RX (Main+AUX,10 MHz) -100 < –94.2 LTE Band 71 RX (Main+AUX,10 MHz) -100 © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 43 / 79...
Page 44: Conducted Transmit Power/Aclr
24.5 UMTS Band 1 21-25 UMTS Band 2 21-25 UMTS Band 3 21-25 UMTS Band 4 21-25 UMTS Band 5 21-25 UMTS Band 8 21-25 UMTS Band 19 21-25 © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 44 / 79...
Page 45 21-25 LTE Band 42 21-25 LTE Band 66 21-25 LTE Band 71 21-25  LTE test data was written based on data measured in Uplink 1RB & QPSK condition. © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 45 / 79...
Page 46: Table 4-4 Conducted Aclr Value Of Nad At 25
UMTS Band 5 Power_Ratio @ +10MHz Offset -42.2 Adjacent channel Leakage UMTS Band 8 Power_Ratio @ +10MHz Offset -42.2 Adjacent channel Leakage UMTS Band 19 Power_Ratio @ +10MHz Offset © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 46 / 79...
Page 47 Ratio_RB_LOW_UTRA Adjacent Channel Leakage -35.2 LTE Band 42 power Ratio_RB_LOW_UTRA Adjacent Channel Leakage -35.2 LTE Band 66 power Ratio_RB_LOW_UTRA Adjacent Channel Leakage -35.2 LTE Band 71 power Ratio_RB_LOW_UTRA © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 47 / 79...
Page 48: Antenna Design Requirements
Figure 4-1 and Figure 4-2 shows examples of antenna line. Figure 4-1 Recommended l a y e r 1 of antenna line Figure 4-2 Recommended l a y e r 2 of antenna line © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 48 / 79...
Page 49  Shield the signal cable of the board.  Design filter circuits. Samsung is able to make technical suggestions on radio performance improvement of the module. © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 49 / 79...
Page 50: Gsm/Wcdma/Lte Antenna Requirements
100 MHz in LTE Band 40 194 MHz in LTE Band 41 200 MHz in LTE Band 42 490 MHz in LTE Band 66 81 MHz in LTE Band 71 © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 50 / 79...
Page 51 200 MHz in LTE Band 42 490 MHz in LTE Band 66 Gain ≤ 2 dBi 81 MHz in LTE Band 71 Impedance 50 Ω VSWR absolute max ≤ 3:1 VSWR recommended ≤ 2:1 © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 51 / 79...
Page 52: Link Budget
Hardware Guide 4.6 Link budget 4.6.1 Tx link budget Table 4-6 Tx link budget MPR 0 © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 52 / 79...
Page 53: Pcb Recommendation
RF Signals and too many digital/analog lines are not isolated.(Cross talk and Layer 3 Impedance mismatch) There are line width discontinuity and Impedance mismatch. This Impedance mismatch causes High insertion loss © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 53 / 79...
Page 54 Clock line is not shielded with GND. This can be a noise source and cause RX sensitivity interference. Layer 3 Signal Vias are not shielded with GND. These can cause cross talk (RX sensitivity interference) © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 54 / 79...
Page 55: Electrical Features
Table 5-2 lists the operating and storage temperatures and humidity for the WAVE LGA module. Table 5-2 Operating and storage temperatures and humidity Specification Min. Max. Unit –40 ℃ Normal operating temperature –40 ℃ Extended operating temperature –40 ℃ Ambient storage temperature Moisture © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 55 / 79...
Page 56: Electrical Features Of Application Interfaces
The VBAT minimum value must be guaranteed during the burst (with 2.8 A Peak in GPRS or GSM mode). Table 5-5 Requirements for input current Power Peak (GSM 1 slot) Normal (WCDMA) Normal (LTE) VBAT 2.8 A 1.4 A 1.4 A © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 56 / 79...
Page 57: Power Consumption
Max Tx Power Band 10 1 dBm Tx Power 10 dBm Tx Power Max Tx Power Band 12 1 dBm Tx Power 10 dBm Tx Power Max Tx Power © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 57 / 79...
Page 58 Max Tx Power Band 28 1 dBm Tx Power 10 dBm Tx Power Max Tx Power Band 29 1 dBm Tx Power 10 dBm Tx Power Max Tx Power © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 58 / 79...
Page 59 Max Tx Power Band 41 1 dBm Tx Power 10 dBm Tx Power Max Tx Power Band 42 1 dBm Tx Power 10 dBm Tx Power Max Tx Power © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 59 / 79...
Page 60 Max Tx Power Band 8 1 dBm Tx Power 10 dBm Tx Power Max Tx Power Band 19 1 dBm Tx Power 10 dBm Tx Power Max Tx Power © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 60 / 79...
Page 61 1 Up/1 Down 2 Up/1 Down 4 Up/1 Down GPRS 1900 1 Up/1 Down 2 Up/1 Down 4 Up/1 Down 1 Up/1 Down 2 Up/1 Down 4 Up/1 Down © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 61 / 79...
Page 62: Emc And Esd Features
NAD Module.  In the factory line, the operator must remove the element that the ESD affects the NAD module. Operator should wear ESD strap and ESD gloves and work. © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 62 / 79...
Page 63: Package Information
Hardware Guide 6 Package Information 6.1 Dimensions Figure 6-1 Dimension © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 63 / 79...
Page 64: Shield Can Information
This chapter describe shield can information for WAVE NAD. - Shield-can material i) Frame : C7701 1/2H T0.20 (Nickel Silver) ii) Cover : SUS304 (Stainless) Figure 6-2 Shield-can cover © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 64 / 79...
Page 65: Packaging
Hardware Guide 6.3 Packaging Figure 6-3 Packaging © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 65 / 79...
Page 66: Label
30°C and the relative humidity is less than 60%. If the above conditions cannot be met, the module shall be used after baking.  Baking is recommended for about 8 hours at 125℃. © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 66 / 79...
Page 67: Certification
Modification statement The FCC requires the user to be notified that any changes or modifications made to this device that are not expressly approved by Samsung Electronics Co. & Harman could void the user's authority to operate the equipment. Manufacturers of mobile or fixed devices incorporating this module series are authorized to use ⚠...
Page 68 Hardware Guide ISED Canada requires the user to be notified that any changes or modifications made to this device that are not expressly approved by Samsung Electronics Co. & Harman could void the user's authority to operate the equipment. Manufacturers of mobile or fixed devices incorporating these modules are authorized to use the ⚠...
Page 69 Informations concernant l'exposition aux fréquences radio (RF) La puissance de sortie émise par l’appareil de sans-fil Samsung Electronics Co. & Harman Cellular Module est inférieure à la limite d'exposition aux fréquences radio d'Innovation, Sciences et Développement économique Canada (ISDE). Utilisez l’appareil de sans-fil Samsung Electronics Co. &...
Page 70 20 cm between the radiator and the body of the user or nearby persons. This transmitter must not be co-located or operating in conjunction with any other antenna or transmitter except as authorized in the certification of the product. © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 70 / 79...
Page 71: Software Information
Hardware Guide 9 Software information 9.1 AT Command Table 8-1 AT Command List Command H/W REV Ex) HWREV:6 AT+HWREV AT+CPSKU CPSKU:0 NAD S/W Version AT+CGMR S5123_WAVEM_SGC_xxxxxxx © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 71 / 79...
Page 72: Acronyms And Abbreviations
Digital power source Direct Current Data Communication Equipment Digital Cellular System Down Link Direct Memory Access Differential Nonlinearity Discontinuous Reception Development Kit Envelope Correlation Coefficient ETSI European Telecommunication Standard Institute © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 72 / 79...
Page 73 Enhanced High Speed Packet Access HSUPA High Speed Up-link Packet Access Integrated Circuit ILPC Inner Loop Power Control Inter Metallic Compound International Mobile Telephony Integral Nonlinearity In-phase and Quadrature phase International Standards Organization © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 73 / 79...
Page 74 Power Control Level Pulse Code Modulation Personal Communications System Protocol Data Unit Product Identity Power Management Unit Packet Switched QPSK Quadrature Phase Shift Keying Quadrature Amplitude Modulation Radio Frequency Relative Humidity © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 74 / 79...
Page 75 Voice over LTE VSWR Voltage Standing W ave Ratio WEEE Waste Electrical and Electronic Equipment WCDMA Wideband Code Division Multiple Access WiFi Wireless Fidelity WWAN Wireless Wide Area Network © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 75 / 79...
Page 76 XCP_GPIO4_CPALV CP2MCU_WAKEUP XCP_GPIO_23 Reserved XCP_GPIO_46 Reserved XCP_GPIO_47 ETH_ENABLE XCP_GPIO_57 XETH_RESOUT_N XCP_GPIO_60 GPIO_ANT_SW1 XCP_GPIO_48 GPIO_ANT_SW2 XCP_GPIO_49 GPIO_ANT_SW3 XCP_GPIO_54 GPIO_ANT_SW4 XCP_GPIO_55 XCP_GPIO_RSV1 XCP_GPIO_63 XCP_GPIO_RSV2 XCP_GPIO_50 XCP_GPIO_RSV3 XCP_GPIO_51 XCP_GPIO_RSV4 XCP_GPIO_52 XCP_GPIO_RSV5 XCP_GPIO_53 © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 76 / 79...
Page 77 9) p.33 PCIe Interface Figure 3-5,3-6,3-7 update 10) p.37 4.2.2 Data Services and Power Class update 11) p.40 4.2.3 EN-DC upsupport band removed : DC_3A-41A_n78A, DC_1A-41A_n77A, DC_1A-41C_n77A, DC_1A-41A_n78A, DC_1A-41C_n78A, DC_1A-41C_n79A, DC_2A-5A_n66A, DC_2A-12A_n66A © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 77 / 79...
Page 78 3) p.37 Data Services update 4) P.66 Label updated 5) p.68 7.2 FCC/IC Regulatory notices added 6) p.40 EN-DC combination removed : NA/CHN/ECE Skew [2020.12.03 v13] 1) p.68 FCC warning update © SAMSUNG Electronics Co., Ltd. Confidential & Proprietary 78 / 79...

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