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Remove PS2 and short circuit pin 2 to 5 and pin 1 to 4.
o
o
Populate D1/ R1 (not supplied): D1 is the high voltage bootstrap diode (for example ES1J)
and use 1-2Ω 0805 SMD resistor on R1. Depopulate PS1, LED1 and replace C2 with 1uF
capacitor.
Remove 0Ω jumper at FB1 and supply +9V at VDRV.
o
Figure 6 - Gate drive power supply with optional bootstrap mode
Current shunt JP1
The board provides an optional current shunt position JP1 between the source of Q2 and power
•
ground return. This allows drain current measurement for switching characterization test such as
Eon/Eoff measurement.
The JP1 footprint is compatible with T&M Research SDN series coaxial current shunt
•
(recommended P/N: SDN-414-10, 2GHz B/W, 0.1Ω)
•
If current shunt is not used JP1 must be shorted. JP1 affects the power loop inductance and its
inductance should be kept as low as possible. Use a copper foil or jumper with low inductance.
CAUTION
Check the JP1 before the first time use. To complete the circuit JP1 needs to
be either shorted or a current shunt must be inserted before powering up.
GS66508B-EVBDB1 UG rev. 190605
650V GaN E-HEMT Evaluation Board User's Guide
© 2019 GaN Systems Inc.
Please refer to the Evaluation Board/Kit Important Notice on page 30
GS66508B-EVBDB1
www.gansystems.com
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