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GÄN GS66508B-EVBDB1 User Manual

E-hemt daughter board and gs665mb-evb evaluation platform
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___________________________________________________________________________________________________________________
GS66508B-EVBDB1
GaN E-HEMT Daughter Board and GS665MB-EVB
Evaluation Platform
User's Guide
Visit
www.gansystems.com
DANGER!
This evaluation kit is designed for engineering evaluation in a controlled
lab environment and should be handled by qualified personnel ONLY.
High voltage will be exposed on the board during the test and even brief
contact during operation may result in severe injury or death.
Never leave the board operating unattended. After it is de-energized,
always wait until all capacitors are discharged before touching the board.
CAUTION
This product contains parts that are susceptible to damage by electrostatic
discharge (ESD). Always follow ESD prevention procedures when
handling the product.
GS66508B-EVBDB1 UG rev. 190605
650V GaN E-HEMT Evaluation Board User's Guide
for the latest version of this user's guide.
© 2019 GaN Systems Inc.
Please refer to the Evaluation Board/Kit Important Notice on page 30
GS66508B-EVBDB1
www.gansystems.com
1

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Summary of Contents for GÄN GS66508B-EVBDB1

  • Page 1 This product contains parts that are susceptible to damage by electrostatic discharge (ESD). Always follow ESD prevention procedures when handling the product. GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 30...
  • Page 2 ___________________________________________________________________________________________________________________ Overview The GS66508B-EVBDB1 daughter board style evaluation kit consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (E-HEMTs) and all necessary circuits including half bridge gate drivers, isolated power supplies and optional heatsink to form a functional half bridge power stage. It allows users to easily evaluate the GaN E-HEMT performance in any half bridge-based topology, either with the universal mother board (P/N: GS665MB-EVB) or for quick prototyping of a users’...

  • Page 3: Power Pins

    • VDC-: Input DC bus voltage ground return. Note that control ground 0V is isolated from VDC-. • Figure 1 - GS66508B-EVBDB1 Evaluation Board Block Diagram GS66508B-EVBDB1 half bridge daughter board Figure 2 - GS66508B-EVBDB top side GS66508B-EVBDB1 UG rev. 190605 ©...
  • Page 4 The large S pad serves as the Source connection and thermal pad. Pin 4 is the Kelvin source connection for the gate drive return. Figure 4 - Package outline of GS66508B GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com...

  • Page 5: Gate Driver Circuit

    Bootstrap mode The board has the option for users to experiment with non-isolated bootstrap circuit with • following circuit changes: GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 30...
  • Page 6 CAUTION Check the JP1 before the first time use. To complete the circuit JP1 needs to be either shorted or a current shunt must be inserted before powering up. GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 30...
  • Page 7 BNC case To oscilloscope probe input (use 50Ω termination) BNC tip Figure 8 - Recommended probe connection with current shunt GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 30...

  • Page 8: Thermal Design

    There is no on-board over-temperature protection. Device temperature must be closely monitored during the test. Never operate the board with device temperature exceeding T (150°C) J_MAX GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 30...
  • Page 9 GS66508B-EVBDB1 650V GaN E-HEMT Evaluation Board User’s Guide ___________________________________________________________________________________________________________________ Using GS66508B-EVBDB1 with universal mother board GS665MB- 12V INPUT Airflow direction 5V Power Supply VDC- For Ext. Daughter Board 12VDC Fan VDC+ Probing point for VSW PWM control & dead VOUT...
  • Page 10 RC delay circuits, R6/C12 and R5/C11. The default dead time is set to about 100ns. Additionally two potentiometers locations are provided (TR1/TR2, not included) to allow fine adjustment of the dead time if needed. GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com...

  • Page 11: Test Points

    For the double pulse testing we use 2x 60uH/40Amp inductor (CWS, P/N: HF467-600M-40AV) in series. C14 is designed to accommodate a film capacitor as output filter. GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com...
  • Page 12 1. All units are in mm. 2. Pin 1-6: Dia. 1mm 3. Pin 7-9: 1.91mm (75mil) mounting hole for Mill-max Receptacle P/N: 0312-0-15-15-34-27-10-0. Figure 13 - Recommended footprint drawing of daughter board GS66508B-EVBDB1 GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc.
  • Page 13 Limit the maximum switching test current to 30A and ensure maximum drain voltage, including ringing, is kept below 650V for pulse testing. Exceeding this limit may cause damage to the devices. GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc.

  • Page 14: Boost Mode

    Totem pole bridgeless PFC CON5 CON4 Jumper setting: CON1 J4 (Q1): INT_INV • INPUT J6 (Q2): INT • CON6 CON7 VDC- GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 30...
  • Page 15 Check the JP1 on daughter board GS66508B-EVBDB1. Use a copper foil and solder to short JP1. Install GS66508B-EVBDB1 on the mother board. Press all the way down until you feel a click. Connect probe between VGL and VSL for gate voltage measurement.
  • Page 16 GS66508B-EVBDB1 650V GaN E-HEMT Evaluation Board User’s Guide ___________________________________________________________________________________________________________________ Figure 15 Double pulse test setup example (GS66508B-EVBDB1) GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 30...
  • Page 17 GS66508B-EVBDB1 650V GaN E-HEMT Evaluation Board User’s Guide ___________________________________________________________________________________________________________________ Test results – GS66508B-EVBDB1 Double Pulse test (VDS=400V, IMAX = 30A, L=120uH, RG(ON)=20Ω, RG(OFF)=20Ω) Figure 16 - 400V/30A double pulse test waveform Figure 16 shows the hard switching on waveforms at 400V/30A. A Vds dip can be seen due to the rising drain current (di/dt in the power loop ΔV=Lpxdi/dt, where Lp is the total power loop inductance).
  • Page 18 ___________________________________________________________________________________________________________________ Figure 17 - Double pulse test switching transient - hard switching turn-on 400V/30A Figure 18 - Double pulse test switching transient - hard switching turn-off 400V/30A GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 30...
  • Page 19 It is recommended to manually deskew Id against Vds as shown in Figure 20. The drain current spike is caused by charging the high side switch Coss (Qoss loss). GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc.
  • Page 20 ___________________________________________________________________________________________________________________ Figure 21 - Turn-on switching loss measurement (Eon=106uJ, 400V/30A) Figure 19 - Turn-off switching loss measurement (Eoff=76 uJ, 400V/30A) GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 30...
  • Page 21 This means that with the fast turn-off speed the GaN E-HEMT can achieve near zero turn-off switching loss. Figure 20 - GS66508B Switching Loss Measurement (VDS = 400V, TJ=25°C) GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com...
  • Page 22 GS66508B-EVBDB1 650V GaN E-HEMT Evaluation Board User’s Guide ___________________________________________________________________________________________________________________ Appendix A - GS66508B EVBDB1 Circuit schematic GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 30...
  • Page 23 GS66508B-EVBDB1 650V GaN E-HEMT Evaluation Board User’s Guide ___________________________________________________________________________________________________________________ Assembly Drawing TOP SIDE COMPONENTS BOTTOM SIDE COMPONENTS GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 30...
  • Page 24 GS66508B-EVBDB1 650V GaN E-HEMT Evaluation Board User’s Guide ___________________________________________________________________________________________________________________ PCB layout Top and Silk Layer Layer 2 GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 30...
  • Page 25 GS66508B-EVBDB1 650V GaN E-HEMT Evaluation Board User’s Guide ___________________________________________________________________________________________________________________ Layer 3 Bottom GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 30...
  • Page 26 GS66508B-EVBDB1 650V GaN E-HEMT Evaluation Board User’s Guide ___________________________________________________________________________________________________________________ Bill of Materials GS66508B-EVBDB1 GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 30...
  • Page 27 1. ALL SMD RESISTORS AND CAPACITORS ARE 0603 SIZE 2. DO NOT INSTALL TR1,TR2,R2,R3 AND C14 VDC_N PCB STANDOFF 4.75MM MNT HOLE CON7 CON6 KEYSTONE 8839-8834 GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 30...

  • Page 28: Assembly Drawing

    GS66508B-EVBDB1 650V GaN E-HEMT Evaluation Board User’s Guide ___________________________________________________________________________________________________________________ Assembly drawing Assembly Top Assembly Bottom GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 30...

  • Page 29: Bill Of Materials

    ON THE ASSEMBLY INSTALL ON J4 "INT" POSITION AND 2 JUMPER JUMPER SHUNT GENERIC TE CONNECTIVITY 382811-8 J6 "INT_INV" POSITION GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 30...
  • Page 30 This notice contains important safety information about temperatures and voltages. For further safety concerns, please contact a GaN Systems’ application engineer. GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 30...
  • Page 31 The information contained herein or any use of such information does not grant, explicitly, or implicitly, to any party any patent rights, licenses, or any other intellectual property rights. General Sales and Terms Conditions apply. © 2009-2015 GaN Systems Inc. All rights reserved. GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com...

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