Related Manuals for Toshiba TCK401G
Summary of Contents for Toshiba TCK401G
- Page 1 RD002-RGUIDE-01 MOSFET Driver IC Application and Circuit of the TCK401G Reference Guide RD002-RGUIDE-01 © 2018 2018-03-07 1 / 15 Toshiba Electronic Devices & Storage Corporation Rev. 1...
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Page 2: Table Of Contents
5.1.4 Pin description..................14 5.2. SSM6K513NU ..................14 5.2.1 Overview ....................14 5.2.2. External view and pin assignment ............14 5.2.3 Internal block diagram ................14 © 2018 2018-03-07 2 / 15 Toshiba Electronic Devices & Storage Corporation Rev. 1... -
Page 3: Overview
The TCK401G operates wide input voltage range from 2.7V to 28V so the maximum 20V input can be applied specified by USB PD. Also the slew rate control driver contributes avoiding unexpected inrush current during switching transitions in order to protect next stage electronic circuits. -
Page 4: Application Circuit Example And Bill Of Materials
2. Application circuit example and bill of materials 2.1. Application circuit example Figure 2.1.1 shows an example of an application circuit using the TCK401G MOSFET driver IC. HIGH → ON LOW → OFF Figure 2.1.1 Application circuit example for the TCK401G MOSFET driver IC 2.2. -
Page 5: Major Features
Output current: 5A ＝ 4.7μF Output current (5A/div) Output voltage (5V/div) 100μs/div Figure 3.1.2 Example of waveforms of a load switch with discrete solution (enlarged view) © 2018 2018-03-07 5 / 15 Toshiba Electronic Devices & Storage Corporation Rev. 1... - Page 6 Note that delay time may happens from V signal applied to the TCK401G to activate the driver stage of the TCK401G. This delay is caused by the time required for signal processing in the TCK401G. The V output of the TCK401G drives the MOSFET gate inputs and the V...
- Page 7 Output current: 5A ＝ 4.7μF Output current (5A/div) = 85°C Output voltage (5V/div) 200μs/div Figure 3.1.5 Example of switching waveforms of back-to-back MOSFETs driven by the TCK401G (85℃) © 2018 2018-03-07 7 / 15 Toshiba Electronic Devices & Storage Corporation Rev. 1...
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Page 8: Auto Output Discharge Function
MOSFETs at switch-off in order to pull down quickly the output voltage to zero. If the DIS pin of the TCK401G is connected to the outputs of external N-channel MOSFETs, the TCK401G automatically discharges... - Page 9 200μs/div Figure 3.2.2 Output waveforms with the auto output discharge function The auto output discharge function of the TCK401G is designed to work properly regardless of the ambient temperature. Figure 3.2.3 and Figure 3.2.4 show examples of MOSFET switching waveforms at -40°C and 85°C.
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Page 10: Design Considerations
(C1) and output capacitor C (C2) to ensure stable operation of the TCK401G. Place capacitors of at least 1.0μF closer to the input and output pins. The tolerant voltage of these capacitors should be sufficiently higher than their operating voltage. - Page 11 The V pin may be left open if the MOSFET gate-source voltage (V ) has enough margin. In cases of the TCK401G driving only one MOSFET, the V pin may also be left open if the MOSFET gate-source voltage (V ) has enough margin.
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Page 12: Product Overview
5. Product overview 5.1. TCK401G 5.1.1 Overview The TCK401G MOSFET driver IC operates over a wide input voltage range of up to 28V. MOSFET driver IC in a small package High maximum input voltage: V (max) = 40V ... -
Page 13: External View And Pin Assignment
5.1.2. External view and pin assignment External view and marking Marking (top view) Bottom view Pin assignment (Top view) Figure 5.1.1 External view, marking, and pin assignment of the TCK401G 5.1.3 Internal block diagram Figure 5.1.2 Internal block diagram of the TCK401G © 2018 2018-03-07 13 / 15 Toshiba Electronic Devices &... -
Page 14: Pin Description
Mode Control pin External MOSFETs turn on when V = High and turn off when V = Low. Table 5.1.1 Pins of the TCK401G 5.2. SSM6K513NU 5.2.1 Overview The SSM6K513NU is a silicon N-channel MOSFET for power management switch applications. - Page 15 RD002-RGUIDE-01 Terms of Use This terms of use is made between Toshiba Electronic Devices and Storage Corporation (“We”) and customers who use documents and data that are consulted to design electronics applications on which our semiconductor devices are mounted (“this Reference Design”). Customers shall comply with this terms of use. Please note that it is assumed that customers agree to any and all this terms of use if customers download this Reference Design.