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LDMOS AMPLIFIER MODULE
DESCRIPTION
The RF module is an integrated TV linear amplifier designed for UHF band, this module employs push-pull
LDMOS technology in order to achieve very good efficiency, high linearity and reliability.
LDMOS transistors operate in AB class. It is a wideband amplifier over the full frequency, no adjustment is
required for the channel change. The board includes RF section amplifier, bias circuit, protection circuit and
matching networks. A silver plated copper plate is brazed with PCB in order to obtain low thermal resistance.
Providing a minimum of 200W Pk sync linear power, this module is the perfect amplifier for any broadband
UHF power transmitter.
TECHNICAL CHARACTERISTICS
Frequency Range
Output Power
Gain
Output LDMOS Power Supply
Output LDMOS Bias Current @ +32V Vdd
RF Input Impedance
RF Output Impedance
Curve response graphic
Middle frequency 660MHz, span 500MHz, 2dB/div., reference to the arrow
134
470 - 860MHz
200W PEP
14dB (±1)
32V (±2%)
1A
50Ω
50Ω
SCH0192AR0
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