Table of Contents
Advertisement
Philips Semiconductors
TOPFET high side switch
SMD version of BUK210-50Y
VBG
VSG
VIG
Fig.4. High side switch measurements schematic.
(current and voltage conventions)
R
/ mOhm
ON
80
60
V
BG
40
20
0
-50
0
Fig.5. Typical on-state resistance, t
R
= f(T
); parameter V
ON
j
I
/ A
L
50
40
30
20
10
0
0
Fig.6. Typical on-state characteristics, T
I
= f(T
); parameter V
L
j
May 2001
VBL
IB
II
B
I
IL
TOPFET
L
IS
HSS
S
VLG
G
RS
IG
BUK215-50Y
typ
.
= 6 V
9 V =< V
=< 35 V
BG
50
100
150
O
T
/
C
j
= 300 µs.
p
; condition I
= 10 A
BG
L
BUK215-50Y
V
/ V
> = 8
BG
1
V
/ V
BL
= 25 ˚C.
j
= 250 µs
; t
BG
p
I
BG(ON)
5
4
3
2
1
0
0
Fig.7. Typical supply characteristics, 25 ˚C.
R
/ mOhm
ON
40
38
36
34
32
30
28
26
24
22
20
200
1
Fig.8. Typical on-state resistance,T
R
= f(V
ON
I
/ mA
G
3.0
7
2.5
6
2.0
5
1.5
1.0
0.5
0
-50
2
Fig.9. Typical operating supply current.
I
= f(T
G
7
/ mA
UNDERVOLTAGE
CLAMPING
SHUTDOWN
OVERVOLTAGE
SHUTDOWN
OPERATING V
= 5 V
IG
QUIESCENT V
= 0 V
IG
10
20
30
40
V
/ V
BG
I
= f(V
); parameter V
G
BG
R
ON
10
V
/ V
BG
); condition I
= 10 A; t
BG
L
l
= 0 A
L
lL > IL(TO)
l
> I
L
L(TO)
typ.
0
50
100
O
T
/
C
j
); parameters I
, V
; condition V
j
L
BG
Product specification
BUK215-50Y
BUK215-50Y
50
60
70
IG
BUK215-50Y
max
100
= 25 ˚C.
j
= 300 µs
p
BUK215-50Y
9 V <= V
<= 35 V
BG
V
= 50 V
BG
150
200
= 5 V
IG
Rev 1.010
Advertisement
Table of Contents
